• 제목/요약/키워드: Double Carrier

검색결과 292건 처리시간 0.023초

HWE에 의한 CdSe 박막의 성장과 광전도 특성 (Growth of CdSe thin films using Hot Wall Eptaxy method and their photoconductive properties)

  • 유상하;홍광준
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.344-348
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    • 2004
  • The CdSe thin films wee grown on the Si(100) wafers by a hot wall epitaxy method(HWE). The source and substrate temperature are $600^{\circ}C\;and\;430^{\circ}C$ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the timperature range 30K to 150K by impurity scatering and decreased in the temperature range 150K to 293K by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of $1.39{\times}10^7$, the MAPD of 335mV, and the rise and decay time of 10ms and 9.5ms, respectively

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Growth and Photoconductive Characteristics of $ZnGa_2Se_4$ Epilayers by the Hot Wall Epitaxy

  • Park, Chang-Sun;Hong, Kwang-Joon
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.263-266
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    • 2004
  • The stochiometric mix of evaporating materials for the $ZnGa_2Se_4$ single crystal thin films were prepared from horizental furnace. The polycrystal structure obtaind from the power x-ray diffraction was defect chalcopyrite. The lattice costants $a_0\;and\;c_0\;were\;a_0=5.51\;A,\;c_0=10.98\;A$. To obtains the single crystal thin films, $ZnGa_2Se_4$ mixed crystal were deposited on throughly etched Si(100) by the Hot Wall Epitaxy (HWE) system. The temperates of the source and the substrate were $590^{\circ}C\;and\;450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to dark current(pc/dc), maximum allowable rower dissipation(MAPD), spectral response and response time.

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HWE에 의한 $Cd_{1-x}Zn_xS$ 박막의 성장과 광전기적 특성 (Growth and optoelectrical properties for $Cd_{1-x}Zn_xS$ thin films byg Hot Wall Epitaxy method)

  • 이상열;홍광준
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.304-308
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    • 2004
  • The $Cd_{1-x}Zn_xS$ thin films were grown on the Si(100) wafers by a hot wall epitaxy method(HWE). The source and substrate temperature are $600^{\circ}C\;and\;440^{\circ}C$ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the $Cd_{0.53}Zn_{0.47}S$ samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of $1.65{\times}10^7$, the MAPD of 338mW, and the rise and decay time of 9.7ms and 9.3ms, respectively

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Growth and Photoconductive Characteristics of $AgInS_2$ Single Crystal Thin Films by the Hot Wall Epitaxy

  • Hong, Kwang-Joon
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.381-384
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    • 2004
  • The stochiometric nix of evaporating materials for the $AgInS_2$ single crystal thin films were prepared from horizontal furnace. The polycrystal structure obtaind from the power x-ray diffraction was chalcopyrite. The lattice costants $a_0\;and\;c_0$ were $a_0=5.86(5.82)\;A,\;c_0=11.355(11.17)\;A$. To obtains the single crystal thin films, $AgInS_2$ mixed crystal were deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The temperates of the source and the substrate were $590^{\circ}C\;and\;450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility dependence on temperature. In order to explore the applicability as a photoconductive cell, we measured the sensitivity($\gamma$), the ratio of photocurrent to dark current (pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time.

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펄스 레이저 증착(PLD)법에 의한 ZnO 박막 성장과 열처리 효과 (The Effect of Thermal Annealing and Growth of ZnO Thin Film by Pulesd Laser Deposition)

  • 홍광준
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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    • pp.160-162
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    • 2003
  • ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The substrate temperatures was $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}\;and\;299\;cm^2V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T\;+\;463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$, Vo, $Zn_{int}$, and $O_{int}$ obtained by PL measurements were classified as a donors or accepters type.

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A 13.56 MHz Radio Frequency Identification Transponder Analog Front End Using a Dynamically Enabled Digital Phase Locked Loop

  • Choi, Moon-Ho;Yang, Byung-Do;Kim, Nam-Soo;Kim, Yeong-Seuk;Lee, Soo-Joo;Na, Kee-Yeol
    • Transactions on Electrical and Electronic Materials
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    • 제11권1호
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    • pp.20-23
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    • 2010
  • The analog front end (AFE) of a radio frequency identification transponder using the ISO 14443 type A standard with a 100% amplitude shift keying (ASK) modulation is proposed in this paper and verified by circuit simulations and measurements. This AFE circuit, using a 13.56 MHz carrier frequency, consists of a rectifier, a modulator, a demodulator, a regulator, a power on reset, and a dynamically enabled digital phase locked loop (DPLL). The DPLL, with a charge pump enable circuit, was used to recover the clock of a 100% modulated ASK signal during the pause period. A high voltage lateral double diffused metal-oxide semiconductor transistor was used to protect the rectifier and the clock recovery circuit from high voltages. The proposed AFE was fabricated using the $0.18\;{\mu}m$ standard CMOS process, with an AFE core size of $350\;{\mu}m\;{\times}\;230\;{\mu}m$. The measurement results show that the DPLL, using a demodulator output signal, generates a constant 1.695 MHz clock during the pause period of the 100% ASK signal.

New Generalized PWM Schemes for Multilevel Inverters Providing Zero Common-Mode Voltage and Low Current Distortion

  • Nguyen, Nho-Van;Nguyen, Tam-Khanh Tu
    • Journal of Power Electronics
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    • 제19권4호
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    • pp.907-921
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    • 2019
  • This paper presents two advanced hybrid pulse-width modulation (PWM) strategies for multilevel inverters (MLIs) that provide both common-mode voltage (CMV) elimination and current ripple reduction. The first PWM utilizes sequences that apply one switching state at the double ends of a half-carrier cycle. The second PWM combines the advantages of the former and an existing four-state PWM. Analyses of the harmonic characteristics of the two groups of switching sequences based on a general switching voltage model are carried out, and algorithms to optimize the current ripple are proposed. These methods are simple and can be implemented online for general n-level inverters. Using a three-level NPC inverter and a five-level CHB inverter, good performances in terms of the root mean square current ripple are obtained with the proposed PWM schemes as indicated through improved harmonic distortion factors when compared to existing schemes in almost the entire region of the modulation index. This also leads to a significant reduction in the current total harmonic distortion. Simulation and experimental results are provided to verify the effectiveness of the proposed PWM methods.

유조선 좌초 사고 시 2차사고 방지를 위한 잔류강도 평가기술 개발 (Development of an Empirical Formula for Residual Strength Assessment to Prevent Sequential Events of Grounded Oil Tankers)

  • 백승준;김상진;백점기;손정민
    • 대한조선학회논문집
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    • 제56권3호
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    • pp.263-272
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    • 2019
  • The aim of this study is to develop a rapid calculation technique of the residual strength in order to prevent sequential events under grounding accidents. Very Large Crude-Oil Carrier (VLCC), Suezmax, and Aframax double hull oil tankers carrying large quantities of crude oil were selected for target structures. The rock geometries are chosen from the published regulation by Marine Pollution Treaty (MARPOL) of the International Maritime Organization (IMO). Oceanic rocks as the most frequently encountered obstruction with ships are applied in this work. Damage condition was predicted using ALPS/HULL program based on grounding scenario with selected parameters, i.e. depth of penetration, damage location and tanker type. The results of the scenarios are quantified to form an empirical formula which can evaluate the residual strength. The proposed formula is validated by applying a series of random grounding scenarios.

Floating Gas Power Plants

  • Kim, Hyun-Soo
    • 한국산업융합학회 논문집
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    • 제23권6_1호
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    • pp.907-915
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    • 2020
  • Specification selection, Layout, specifications and combinations of Power Drives, and Ship motions were studied for FGPP(Floating Gas-fired Power Plants), which are still needed in areas such as the Caribbean, Latin America, and Southeast Asia where electricity is not sufficiently supplied. From this study, the optimal equipment layout in ships was derived. In addition, the difference between engine and turbine was verified through LCOE(Levelized Cost of Energy) comparison according to the type and combination of Power Drives. Analysis of Hs(Significant Height of wave) and Tp(spectrum Peak Period of wave) for places where this FGPP will be tested or applied enables design according to wave characteristics in Brazil and Indonesia. Normalized Sloshing Pressures of FGPP and LNG Carrier are verified using a sloshing analysis program, which is CFD(Computational Fluid Dynamics) software developed by ABS(American Bureau of Shipping). Power Transmission System is studied with Double bus with one Circuit Breaker Topology. A nd the CFD analysis allowed us to calculate linear roll damping coefficients for more accurate full load conditions and ballast conditions. Through RAO(Response Amplitude Operator) analysis, we secured data that could minimize the movement of ships according to the direction of waves and ship placement by identifying the characteristics of large movements in the beam sea conditions. The FGPP has been granted an AIP(Approval in Principle) from a classification society, the ABS.

Combined Hepatocellular-Cholangiocarcinoma in Extrahepatic Bile Duct with Co-existing of Scirrhous Type of Hepatocellular Carcinoma

  • Sang Hoon Lee;Moon Jae Chung
    • Journal of Digestive Cancer Research
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    • 제2권1호
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    • pp.32-36
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    • 2014
  • We report a patient with combined hepatocellular-cholangiocarcinoma confined in the common hepatic duct and scirrhous type of hepatocellular carcinoma in the caudate lobe of liver simultaneously. The patient was a 55-yearsold Korean man with hepatitis B virus (HBV) carrier who was referred from a local hospital due to detected liver mass on abdominal computed tomography (CT). He has presented jaundice and weight loss for the previous 3 weeks. Laboratory examination showed AST/ALT elevation and hyperbilirubinemia. HBsAg was positive. The tumor marker study showed elevated AFP and DCP, not CEA and CA 19-9. Abdominal CT disclosed an about 2.1×0.9 cm sized soft tissue density in hilum with both intrahepatic duct (IHD) dilatations and an about 3×2.1 cm sized arterial enhancing lesion at segment 8 of the liver. Patient received 15 cycles of Gemcitabine/Cisplantin chemotherapy from February 27, 2013 to December 31, 2013. Caudate lobectomy of liver, segmental resection of bile duct and Roux-en-Y hepaticojejunostomy was performed on February 10, 2014. The final pathologic report showed double primary liver cancer, combined hepatocellular-cholangiocarcinoma in common hepatic bile duct and scirrhous type of hepatocellular carcinoma in segment 1 of the liver. This is a very unusual case in which combined hepatocellular-cholangiocarcinoma confined in the large bile duct and two rare hepatic cancers coexisted.

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