• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.280-280
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• 2010

Semiconductor quantum dots are of great interest for both fundamental research and industrial applications due to their unique size dependant properties. The most promising application of colloidal semiconductor nanocrystals (quantum dots or QDs) is probably as emitters in biomedical labeling, LEDs, lasers etc. As compared to II-VI quantum dots, III-V have attracted greater interest owing to their less ionic lattice, larger exciton diameters and reduced toxicity. Among the III-V semiconductor quantum dots, Indium Phosphide (InP) is a popular material due to its bulk band gap of 1.35 (eV) which is responsible for the photoluminescence emission wavelength ranging from blue to near infrared with change in size of QDs. Nevertheless, in recent years, the exact type of collective properties that arise when semiconductor quantum dots (QDs) are assembled into two- or three-dimensional arrays has drawn much interest. The term "uantum dot solids" is used to indicate three-dimensional assemblies of semiconductor QDs. The optoelectronic properties of the quantum dot solids are known to depend on the electronic structure of the individual quantum dot building blocks and on their electronic interactions. This paper reports an efficient and rapid method to produce highly luminescent and monodisperse quantum dots solution and solid through fabrication of InP thin films. By varying the molar concentration of Indium to Ligand, QDs of different size were prepared. The absorption and emission behaviors were also studied. Similar measurements were also performed on InP quantum dot solid by fabricating InP thin films. The optical properties of the thin films are measured at different curing temperatures which show a blue shift with increase in temperature. The dielectric properties of the thin films were also investigated by Capacitance-voltage(C-V) measurements in a metal-insulator-semiconductor (MIS) device.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.207-207
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• 2012

Si quantum dot (QD) imbedded in a $SiO_2$ matrix is a promising material for the next generation optoelectronic devices, such as solar cells and light emission diodes (LEDs). However, low conductivity of the Si quantum dot layer is a great hindrance for the performance of the Si QD-based optoelectronic devices. The effective doping of the Si QDs by semiconducting elements is one of the most important factors for the improvement of conductivity. High dielectric constant of the matrix material $SiO_2$ is an additional source of the low conductivity. Active doping of B was observed in nanometer silicon layers confined in $SiO_2$ layers by secondary ion mass spectrometry (SIMS) depth profiling analysis and confirmed by Hall effect measurements. The uniformly distributed boron atoms in the B-doped silicon layers of $[SiO_2(8nm)/B-doped\;Si(10nm)]_5$ films turned out to be segregated into the $Si/SiO_2$ interfaces and the Si bulk, forming a distinct bimodal distribution by annealing at high temperature. B atoms in the Si layers were found to preferentially substitute inactive three-fold Si atoms in the grain boundaries and then substitute the four-fold Si atoms to achieve electrically active doping. As a result, active doping of B is initiated at high doping concentrations above $1.1{\times}10^{20}atoms/cm^3$ and high active doping of $3{\times}10^{20}atoms/cm^3$ could be achieved. The active doping in ultra-thin Si layers were implemented to silicon quantum dots (QDs) to realize a Si QD solar cell. A high energy conversion efficiency of 13.4% was realized from a p-type Si QD solar cell with B concentration of $4{\times}1^{20}atoms/cm^3$. We will present the diffusion behaviors of the various dopants in silicon nanostructures and the performance of the Si quantum dot solar cell with the optimized structures.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.436-436
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• 2011

Recently, spintronic devices with submicron structures are widely investigated to take advantage of their unique micromagnetic properties. In this work, we study the temperature dependence of exchange bias in bilayer anti-dot arrays made by depositing Co (40 nm)/Ni (5 nm) ferromagnetic bilayer on Si substrate to form anti-dot arrays with a diameter $1{\mu}m$. The anti-dot patterning was done only for the upper Co layer, while the Ni underlayer was kept unperforated. The temperature dependences of magnetoresistance (MR) and exchange bias were studied along magnetic easy and hard axes. The in-plane MR measurements were performed using a physical-property measurement system (PPMS ; Quantum Design Inc.) at various temperatures. The standard in-line four-point probe configuration was used for the electrical contacts. As temperature was varied, the MR data were obtained in which in-plane field (H=3 kOe) was applied in the directions along the hard and the easy axes with respect to the lattice plane. The temperature dependences of magnetic anisotropy and exchange bias were also studied along the magnetic easy and hard axes. As temperature decreases, the single peak splits into two peaks. While no exchange bias was observed along the magnetic easy axis, the exchange bias field steadily increased with decreasing temperature along the magnetic hard axis. These results were interpreted in connection with the magnetic anisotropy and the effect of the anti-dots in pinning domain wall motion along the respective direction.

• Korean Journal of Food Science and Technology
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• v.35 no.3
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• pp.470-474
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• 2003

DNA sequence information on small-subunit rRNA gene (16S rDNA) obtained from food-poisoning bacterial culture was used to investigate the presence of bacterial pathogens in food. By reverse dot blot detection method, presence of food-poisoning bacteria could be confirmed on hybridization of digoxigenin-labeled 16S rDNA Polymerase Chain Reaction (PCR) primer product and biotin-labeled specific oligonucleotide probe. Escherichia coli, Bacillus cereus. and Salmonella sp. were used as the representative food-poisoning bacterial microorganisms. An oligonucleotide probe, based on the variable region of 16S rRNA gene, was used as the specific probe. These tools may be more useful than classic biochemical method for rapid identification of contaminated food.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.196.2-196.2
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• 2013

본 연구에서는 분자선 에피택시 (MBE)법으로 성장된 InAs submonolayer quantum dot (SML-QD)을 태양전지에 응용하여 광학 및 전기적 특성을 평가하였다. 본 연구에서 사용된 양자점 태양전지(quantum dot solar cell, QDSC)의 구조는 n+-GaAs 기판 위에 n+-GaAs buffer와 n-GaAs base layer를 차례로 성장 한 후, 활성영역에 InAs/InGaAs SML-QD와 n-GaAs spacer layer를 8주기 형성하였다. 그 위에 p+-GaAs emitter, p+-AlGaAs window layer를 성장하고 ohmic contact을 위하여 p+-GaAs 를 성장하였다. SML-QD 구조의 두께는 0.3 ML 이며, 이때 SML-QD의 적층수를 4 stacks 으로 고정하였다. SML-QD 와의 비교를 위하여 2.0 ML크기의 InAs자발 형성 양자점 태양전지(SK-QDSC)과 GaAs 단일 접합 태양전지 (reference-SC)를 동일한 성장조건에서 제작하였다. PL 측정 결과, 300 K에서 SML-QD의 발광 피크는 SK-QD 보다 고에너지에서 나타나는데(1.349 eV), 이것은 SML-QD가 SK-QD보다 작은 크기를 가지기 때문으로 사료된다. SML-QD는 single peak를 보이는 반면, SK-QD는 dual peaks (1.112 / 1.056 eV)을 확인하였다. SML-QD의 반치폭(full width at half maximum, FWHM)이 SK-QD에 비하여 작은 것으로 보아 SML-QD가 SK-QD보다 양자점 크기 분포의 균일도가 높은 것으로 해석된다. Illumination I-V 측정 결과, SML-QDSC의 개방 전압(VOC) 과 단락전류밀도(JSC)는 SK-QDSC의 값과 비교해 보면, 각각 47 mV와 0.88 mA/cm2만큼 증가하였다. 이는 SK-QD보다 상대적으로 작은 크기를 가진 SML-QD로 인해 VOC가 증가되었으며, SML-QD가 SK-QD 보다 태양광을 흡수할 수 있는 영역이 비교적 적지만, QD내에 존재하는 energy level에서 탈출 할 수 있는 확률이 더 높음으로써 JSC가 증가한 것으로 분석 된다.

• Journal of the Korean Society of Food Science and Nutrition
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• v.30 no.5
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• pp.937-942
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• 2001

The present study was conducted to identify the mechanism about the regulation of appetite by examining the expression patterns of vasoactive intestinal peptide in the hypothalamus of either fasted for 24 hours or anorexia mutant mouse. In order to investigate expression pattern of the vasoactive intestinal peptide, immunohisto-chemistry was employed along with reverse transcription polymerase chain reaction (RT-PCR) and dot blotting. Immunohistochemistry has shown that level of expression of vasoactive intestinal peptide and appetite-suppessing neuropeptide, was lower in the suprachiasmatic nucleus (SCN) and higher in the paraventricular nucleus (PVN) of the anorexia mutant group than in the comparable regions in the control group. This pattern was repeated in the fasting group, which also showed lower and higher levels of vasoactive intestinal peptide expression in the SCN and PVN respectively, In contrast, the vasoactive intestinal peptide mRNA level in the entire hypothalamus via RT-PCR and dot blotting was similar in the fasting and control groups, while it was significantly increased in the anorexia mutant group.

• Bulletin of the Korean Chemical Society
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• v.2 no.4
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• pp.142-147
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• 1981

A blend polymeric system composed of poly(methyl methacrylate) (PMMA or PM) and polystyrene (PS) dissolved in chloroform was rheologically studied. The viscosities ${\eta}_{bl}$ of the blend system with various blending ratios ${\chi}$ changing from zero (pure PS solution) to unity (pure PMMA solution) were measured at $25{\circ}C$ as a function of shear rates ${\dot{s}}$ by using a Couette type viscometer. ${\eta}_{bl}$ at a given ${\dot{s}}$ decreased exponentially with ${\chi}$ reaching asymptotic constant value of ${\eta}_{bl}$ ; ${\eta}_{bl}$ at a given ${\chi}$ is greater at a smaller ${\dot{s}}$. These results are explained by using Ree-Erying's theory of viscosity, ${\eta}_{bl}=(x_1{\beta}_1/{\alpha}_1)_{b}_1＋ (x_2{\beta}_2/{\alpha}_2)_{bl}[sinh^{-1}{\beta}_2(bl) {\dot{s}}]/{\beta}_2(bl){\dot{s}}$. The Gibbs activation energy ${\Delta}G_i^\neq$(i = 2 for non-Newtonian units) entering into the intrinsic relaxation time ${\beta}$ is represented by a linear combination ${\Delta}G_i^\neq(bl) ={\chi}{\Delta}G_i^{\neq}_{iPM}+(1-{\chi}){\Delta}G_i^{\neq}_{iPS}$;the intrinsic shear modulus$[[\alpha}_i]^{-1}$ is also represented by $[{\alpha}_i(bl)]^{-1}={\chi}[{\alpha}_{iPM}]^{-1}+(1-{\chi})[{\alpha}_{iPS}]^{-1}$ and the fraction of area on a shear surface occupied by the ith flow units $x_i(bl)$ is similarly represented, i.e., $x_i(bl) = {\chi}x_{iPM}+(1-{\chi})x_{iPS}$. By using these ideas the Ree-Eyring equation was rewritten which explained the experimental results satisfactorily.

• Journal of the Korea Society of Computer and Information
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• v.11 no.4 s.42
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• pp.271-281
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• 2006

Due to the development of Internet, number of online documents and the amount of web services are increasing dramatically. However, there are several procedures required, before you actually find what you were looking for. These procedures are necessary to Internet users, but it takes time to search. As a method to systematize and simplify this repetitive job, this paper suggests a DotQuery based interactive search agent. This agent enables a user to search, from his computer, a plenty of information through the DotQuery service. which includes natural languages. and it executes several procedures required instead. This agent also functions as a plug-in service within general web browsers such as Internet Explorer and decodes the DotQuery service. Then it analyzes the DotQuery from a user through its own program and acquires service results through multiple browsers of its own.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.393-398
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• 2019

A poly[bis(4-butypheny)-bis(phenyl)benzidine] (poly-TPD) and poly(9-vinylcarbazole) (PVK) bilayer was employed as a hole transport layer (HTL) in solution-processed CdSe/ZnS quantum dot light-emitting diodes (QLEDs). The thickness of the PVK layer spin-coated onto the poly-TPD layer, whose thickness was fixed to 40 nm, was varied, with PVK layer thicknesses of 0 nm, 35 nm, 45 nm, and 55 nm. Because the thickness of the PVK can determine the hole transport properties of the HTL, a PVK thickness that maximizes the performance of the HTL for the QLEDs was investigated. By employing the optimized PVK thickness of 45 nm, the current efficiency of the QLED exhibited a 1.74 times improvement when compared with that of the QLED with poly-TPD based HTL without PVK. This was mainly attributed to the decrease in the energy barrier between the HTL and the quantum dot (QD) emitting layer (EML).

• Journal of Appropriate Technology
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• v.6 no.2
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• pp.146-150
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• 2020

Assistive technologies for people with disabilities are often marginalized in the Fourth Industrial Revolution. In this paper, we intend to present the possibility of acquiring tactile information through the tactile display adapting an electromagnetic actuator. The multi-layered display designed for tactile communication has innovatively narrowed the size and spacing of cells in order to express pictures, maps, and graphics. This display has enabled the visually impaired to touch two-dimensional information combining with other assistive technologies so that. It would also provide a technical source of access to STEM education (Science, Technology, Engineering, and Mathematics) so that students will perform better and be better prepared for advanced education. Moreover, it can be applied to public infrastructure and transportation in smart-city projects on the globe. Hence, this paper introduces the principle of Electromagnetic-actuator and how it can be utilized in many diverse areas.