• Title/Summary/Keyword: Doping-free

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The Dual-frequency (20/40 kHz) Ultrasound Assisted Photocatalysis with the Active Carbon Fiber-loaded Fe3+-TiO2 as Photocatalyst for Degradation of Organic Dye

  • Xiong, Shaofeng;Yin, Zhoulan;Zhou, Yuanjin;Peng, Xianzhong;Yan, Wenbin;Liu, Zhixiong;Zhang, Xiangyu
    • Bulletin of the Korean Chemical Society
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    • v.34 no.10
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    • pp.3039-3045
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    • 2013
  • Dual-frequency ultrasound assisted photocatalysis (DUAP) method was proposed to degrade a stable organic model effluent, cresol red (CR), using the prepared $Fe^{3+}$-doped $TiO_2$ with active carbon fiber loading ($Fe^{3+}-TiO_2/ACF$) as photocatalyst. The influence of key factors, including Fe doping amount and power density of dual-frequency ultrasounds (20/40 kHz), on the degradation efficiency was investigated. The degradation efficiency rises to 98.7% in 60 min accompanied by the color removal of CR liquid samples from yellow to colorless transparent at optimal conditions. A synergy index of 1.40 was yielded by comparison with single ultrasound assisted photocatalysis (SUAP) and the photocatalysis without ultrasound assisted (UV/$TiO_2$), indicating that a clear synergistic effect exists for the DUAP process. Obvious enhancement of degradation efficiency for the DUAP process should be attributed to production of large amount of free radicals by strong cavitational effects of dual ultrasounds.

Dielectric and Ferroelectric Properties of Nb Doped BNT-Based Relaxor Ferroelectrics

  • Maqbool, Adnan;Hussain, Ali;Malik, Rizwan Ahmed;Zaman, Arif;Song, Tae Kwon;Kim, Won-Jeong;Kim, Myong-Ho
    • Korean Journal of Materials Research
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    • v.25 no.7
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    • pp.317-321
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    • 2015
  • The effects of Nb doping on the crystal structure, microstructure, and dielectric ferroelectric and piezoelectric properties of $(Bi_{0.5}Na_{0.5})_{0.935}Ba_{0.065}Ti_{(1-x)}Nb_xO_3-0.01SrZrO_3$ (BNBTNb-SZ, with ${\chi}=0$, 0.01 and 0.02) ceramics have been investigated. X-ray diffraction patterns revealed that all ceramics have a pure perovskite structure with tetragonal symmetry. The grain size of the ceramics slightly decreased and a change in grain morphology from square to spherical shape was observed in the Nb-doped samples. The maximum dielectric constant temperature ($T_m$) increases with increasing amount of Nb; however, ferroelectric-relaxor transition temperature ($T_{F-R}$) and maximum dielectric constant (${\varepsilon}_m$) values decrease gradually. Nb addition disrupted the polarization hysteresis loops of the BNBT-SZ ceramics by leading a reduction in the remnant polarization coercive field and piezoelectric constant.

Optical properties of a-plane InGaN/GaN multi-quantum wells with green emission

  • Song, Hoo-Young;Kim, Eun-Kyu;Lee, Sung-Ho;Hwang, Sung-Min
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.172-172
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    • 2010
  • In the area of optoelectronic devices based on GaN and related ternary compounds, the two-dimensional system like as quantum wells (QWs) has been investigated as an effective structure for improving the light-emitting efficiency. Generally, the quantum well active regions in III-nitride light-emitting diodes grown on conventional c-plane sapphire substrates have critical problems given by the quantum confined Stark effect (QCSE) due to the effects of strong piezoelectric and spontaneous polarizations. However, the QWs grown on nonpolar templates are free from the QCSE since the polar-axis lies within the growth plane of the template. Also the unique characteristic of linear polarized light emission from nonpolar QW structures is attracting attentions because it is proper to the application of back-light units of liquid crystal display. In this study, we characterized optical properties of the a-plane InGaN/GaN QW structures by temperature-dependent photoluminescence (TDPL) measurements. From the photoluminescence (PL) spectrum measured at 300 K, green emission centered at 520 nm was observed for the QW region. Since indium incorporation on nonpolar QWs is lower than that on c-plane, this high indium-doping on a-plane InGaN QWs is not common. Therefore, the effect of high indium composition on optical properties in a-plane InGaN QWs will be extensively studied.

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Solution Plasma Synthesis of BNC Nanocarbon for Oxygen Reduction Reaction

  • Lee, Seung-Hyo
    • Journal of the Korean institute of surface engineering
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    • v.51 no.5
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    • pp.332-336
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    • 2018
  • Alkaline oxygen electrocatalysis, targeting anion exchange membrane alkaline-based metal-air batteries has become a subject of intensive investigation because of its advantages compared to its acidic counterparts in reaction kinetics and materials stability. However, significant breakthroughs in the design and synthesis of efficient oxygen reduction catalysts from earth-abundant elements instead of precious metals in alkaline media still remain in high demand. One of the most inexpensive alternatives is carbonaceous materials, which have attracted extensive attention either as catalyst supports or as metal-free cathode catalysts for oxygen reduction. Also, carbon composite materials have been recognized as the most promising because of their reasonable balance between catalytic activity, durability, and cost. In particular, heteroatom (e.g., N, B, S or P) doping on carbon materials can tune the electronic and geometric properties of carbon, providing more active sites and enhancing the interaction between carbon structure and active sites. Here, we focused on boron and nitrogen doped nanocarbon composit (BNC nanocarbon) catalysts synthesized by a solution plasma process using the simple precursor of pyridine and boric acid without further annealing process. Additionally, guidance for rational design and synthesis of alkaline ORR catalysts with improved activity is also presented.

Rational Design of Binder-Free Fe-Doped CuCo(OH)2 Nanosheets for High-Performance Water Oxidation

  • Patil, Komal;Jang, Su Young;Kim, Jin Hyeok
    • Korean Journal of Materials Research
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    • v.32 no.5
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    • pp.237-242
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    • 2022
  • Designing and producing a low-cost, high-current-density electrode with good electrocatalytic activity for the oxygen evolution reaction (OER) is still a major challenge for the industrial hydrogen energy economy. In this study, nanostructured Fe-doped CuCo(OH)2 was discovered to be a precedent electrocatalyst for OER with low overpotential, low Tafel slope, good durability, and high electrochemically active surface sites at reduced mass loadings. Fe-doped CuCo(OH)2 nanosheets are made using a hydrothermal synthesis process. These nanosheets are clumped together to form a highly open hierarchical structure. When used as an electrocatalyst, the Fe-doped CuCo(OH)2 nanosheets required an overpotential of 260 mV to reach a current density of 50 mA cm-2. Also, it showed a small Tafel slope of 72.9 mV dec-1, and superior stability while catalyzing the generation of O2 continuously for 20 hours. The Fe-doped CuCo(OH)2 was found to have a large number of active sites which provide hierarchical and stable transfer routes for both electrolyte ions and electrons, resulting in exceptional OER performance.

Grain Growth Behavior of (K0.5Na0.5)NbO3 Ceramics Doped with Alkaline Earth Metal Ions

  • Il-Ryeol Yoo;Seong-Hui Choi;Kyung-Hoon Cho
    • Korean Journal of Materials Research
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    • v.33 no.4
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    • pp.135-141
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    • 2023
  • The volatilization of alkali ions in (K,Na)NbO3 (KNN) ceramics was inhibited by doping them with alkaline earth metal ions. In addition, the grain growth behavior changed significantly as the sintering duration (ts) increased. At 1,100 ℃, the volatilization of alkali ions in KNN ceramics was more suppressed when doped with alkaline earth metal ions with smaller ionic size. A Ca2+-doped KNN specimen with the least alkali ion volatilization exhibited a microstructure in which grain growth was completely suppressed, even under long-term sintering for ts = 30 h. The grain growth in Sr2+-doped and Ba2+-doped KNN specimens was suppressed until ts = 10 h. However, at ts = 30 h, a heterogeneous microstructure with abnormal grains and small-sized matrix grains was observed. The size and number of abnormal grains and size distribution of matrix grains were considerably different between the Sr2+-doped and Ba2+-doped specimens. This microstructural diversity in KNN ceramics could be explained in terms of the crystal growth driving force required for two-dimensional nucleation, which was directly related to the number of vacancies in the material.

Synthesis and Characterization of Soluble Polypyrrole with High Conductivity (높은 전기 전도성을 갖는 가용성 폴리피롤 합성 및 특성)

  • Hong, Jang-Hoo;Jang, Kwan-Sik
    • Applied Chemistry for Engineering
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    • v.18 no.3
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    • pp.234-238
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    • 2007
  • Highly conducting Polypyrroles soluble in organic solvents were synthesized using functional doping agents, such as mixed dopants [sodium di(2-ethylhexyl)sulfosuccinate (DEHSNa) Naphthalenesulfonic acid (NSA), DEHSNa Toluenesulfonic acid (TSA), DEHSNa Dodecylbenzensulfonic acid (DBSA)] and mixed oxidants [$(NH_4)_2S_2O_8{\cdot}FeCl_3$, $(NH_4)_2S_2O_8{\cdot}Fe_2(SO_4)_3$]. Ppy-DEHS powder using an oxidant, such as $(NH_4)_2S_2O_8$ (10 wt%/vol.) showed higher solubility than the mixed dopant (DEHSNa NSA, 3 wt%/vol.) and mixed oxidant [$(NH_4)_2S_2O_8{\cdot}Fe_2(SO_4)_3$, 4 wt%/vol.] in DMF solvent. But Ppy-DEHS free standing film using a mixed dopant, such as DEHSNa NSA (16 S/cm) and a mixed oxidant, such as $(NH_4)_2S_2O_8{\cdot}Fe_2(SO_4)_3$ (13 S/cm) cast from DMF solvent showed higher electrical conductivity than $(NH_4)_2S_2O_8$ (2 S/cm). For the Ppy-DEHS films using various condition cast from DMF solvent, three dimensional various range hopping model (3D VRH ; $\{{\sigma}_{dc}(T)={\sigma}_oexp[-(T_o/T)^{1/4}]\}$) provided fit to the results of temperature dependence of electrical conductivity measurement.

Terahertz Generation and Detection Using InGaAs/InAlAs Multi Quantum Well

  • Park, Dong-U;Han, Im-Sik;No, Sam-Gyu;Ji, Yeong-Bin;O, Seung-Jae;Seo, Jin-Seok;Jeon, Tae-In;Kim, Jin-Su;Kim, Jong-Su
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.205-205
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    • 2013
  • 테라헤르쯔(terahertz: THz)파는 0.1~10 THz 의 범위로 적외선과 방송파 사이에 광대역 주파수 스펙트럼을 차지하고 있으며 직진성, 투과성, 그리고 낮은 에너지 (meV)를 가지고 있어 비 파괴적이고 무해한 장점을 지니고 있다. Ti:sapphire laser와 같은 femto-pulse source 등이 많은 발전이 되어 현재 많은 연구와 발전이 이루어지고 있다. femto-pulse source를 이용한 THz 응용에서는 높은 저항, 큰 전자 이동도, 그리고 아주 짧은 전하수명의 기판을 요구하는데 저온에서 성장한 (low-temperature grown : LT) GaAs는 격자 내에 Gallium 자리에 Arsenic이 치환 하면서 AsGa antisite가 발생하여 전하수명을 짧아지는 것을 응용하여 가장 많이 이용되고 있다. 현재 THz 응용분야에서 보다 작고 가격경쟁력이 있는 광통신을 이용한 THz photomixer등이 활발히 연구 하고 있다. 광섬유 내에서 손실과 분산이 최소값을 가지는 부분이 1.55 ${\mu}m$ 부근이고 In0.53Ga0.47As 기판을 이용하였을 때 여기에 완벽하게 만족하게 된다. 하지만 LT-InGaAs 의 경우 AsGa antisite로 인하여 carrier lifetime은 짧아지지만 높은 n-type 전하밀도를 가지게 된다. 이때 Be을 doping하여 전하밀도를 보상하여 높은 저항을 유지해야 하는데 Be의 활성화를 위해서는 열처리를 필요로 한다. 하지만 열처리를 하면 carrier lifetime이 길어지기 때문에 carrier lifetime과 저항을 적절히 조율해야 한다. 이는 물질자체의 특성이기 때문에 InGaAs는 GaAs보다 낮은 amplitude와 짧은 cut-off frequency를 가진다. 본 연구에서는 보다 높은 저항을 얻기 위하여 molecular beam epitaxy를 이용하여 semi-insulating InP:Fe 기판위에 격자 정합된 InGaAs:Be/InAlAs multi quantum well (MQW)를 온도별 ($250{\sim}400^{\circ}C$), 주기별 (50~150)로 성장을 하였고 이때 InGaAs layer의 Be doping level은 $2{\times}1018\;cm^{-3}$, Ex-situ annealing은 $550^{\circ}C$에서 10분으로 고정 하였다. THz 발생 실험에서는 InGaAs/InAlAs MQW은 4000 pA로 1,000 pA를 가지는 InGaAs epilayer보다 4배 높은 전류 신호를 얻을 수 있었고 모든 샘플이 2 THz에서 cut-off frequency를 가지고 있었다. THz 검출 실험에서는 LT-InGaAs:Be epilayer LT-InGaAs:Be/InAlAs, HT-InGaAs/InAlAs 샘플이 각각 180, 9000, 12000 pA의 전류신호를 가지고 있었고 모든 샘플이 2 THz에서 cut-off frequency를 가지고 있었다. HT-InGaAs/InAlAs MQW를 이용한 검출실험에서는 InGaAs layer가 defect free이지만 LT-InGaAs:Be/ InAlAs MQW 보다 높은 전류 신호를 얻을 수 있었다. 이는 InAlAs layer가 저항만 높이는 것뿐만 아니라 carrier trapping layer로써의 역할도 하는 것으로 사료된다.

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Enhancement of Thermoelectric Properties in Cold Pressed Nickel Doped Bismuth Sulfide Compounds

  • Fitriani, Fitriani;Said, Suhana Mohd;Rozali, Shaifulazuar;Salleh, Mohd Faiz Mohd;Sabri, Mohd Faizul Mohd;Bui, Duc Long;Nakayama, Tadachika;Raihan, Ovik;Hasnan, Megat Muhammad Ikhsan Megat;Bashir, Mohamed Bashir Ali;Kamal, Farhan
    • Electronic Materials Letters
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    • v.14 no.6
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    • pp.689-699
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    • 2018
  • Nanostructured Ni doped $Bi_2S_3$ ($Bi_{2-x}Ni_xS_3$, $0{\leq}x{\leq}0.07$) is explored as a candidate for telluride free thermoelectric material, through a combination process of mechanical alloying with subsequent consolidation by cold pressing followed with a sintering process. The cold pressing method was found to impact the thermoelectric properties in two ways: (1) introduction of the dopant atom in the interstitial sites of the crystal lattice which results in an increase in carrier concentration, and (2) introduction of a porous structure which reduces the thermal conductivity. The electrical resistivity of $Bi_2S_3$ was decreased by adding Ni atoms, which shows a minimum value of $2.35{\times}10^{-3}{\Omega}m$ at $300^{\circ}C$ for $Bi_{1.99}Ni_{0.01}S_3$ sample. The presence of porous structures gives a significant effect on reduction of thermal conductivity, by a reduction of ~ 59.6% compared to a high density $Bi_2S_3$. The thermal conductivity of $Bi_{2-x}Ni_xS_3$ ranges from 0.31 to 0.52 W/m K in the temperature range of $27^{\circ}C$ (RT) to $300^{\circ}C$ with the lowest ${\kappa}$ values of $Bi_2S_3$ compared to the previous works. A maximum ZT value of 0.13 at $300^{\circ}C$ was achieved for $Bi_{1.99}Ni_{0.01}S_3$ sample, which is about 2.6 times higher than (0.05) of $Bi_2S_3$ sample. This work show an optimization pathway to improve thermoelectric performance of $Bi_2S_3$ through Ni doping and introduction of porosity.

Comparison of Dye Removal Performance and Oxidants Formation of Insoluble Electrode (불용성 전극의 Dye 제거 성능과 산화제 생성 비교)

  • Yoo, Young-Eok;Kim, Dong-Seog
    • Journal of Environmental Science International
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    • v.20 no.10
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    • pp.1273-1284
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    • 2011
  • The aim of this research was to evaluate the performance of insoluble electrode for the purpose of degradation of Rhodamine B (RhB) and oxidants generation [N,N-Dimethyl-4-nitrosoaniline (RNO, indicator of OH radical), $O_3$, $H_2O_2$, free Cl, $ClO_2$)]. Methods: Four kinds of electrodes were used for comparison: DSA (dimensional stable anode; Pt and JP202 electrode), Pb and boron doping diamond (BDD) electrode. The effect of applied current (0.5~2.5 A), electrolyte type (NaCl, KCl and $Na_2SO_4$) and electrolyte concentration (0.5~3.5 g/L) on the RNO degradation were evaluated. Experimental results showed that the order of RhB removal efficiency lie in: JP202 > Pb > BDD ${\fallingdotseq}$ > Pt. However, when concerned the electric power on maintaining current of 1 A during electrolysis reaction, the order of RhB removal efficiency was changed: JP202 > Pt ${\fallingdotseq}$ Pb > BDD. The total generated oxidants ($H_2O_2$, $O_3$, free Cl, $ClO_2$) concentration of 4 electrodes was Pt (6.04 mg/W) > JP202 (4.81 mg/W) > Pb (3.61 mg/W) > BDD (1.54 mg/W), respectively. JP202 electrode was the best electrode among 4 electrodes from the point of view of performance and energy consumption. Regardless of the type of electrode, RNO removal of NaCl and KCl (chlorine type electrolyte) were higher than that of the $Na_2SO_4$ (sulfuric type electrolyte) RNO removal. Except BDD electrode, RhB degradation and creation tendency of oxidants such as $H_2O_2$, $O_3$, free Cl and $ClO_2$, found that do not match. RNO degradation tendency were considered a simple way to decide the method which is simple it will be able to determinate the electrode where the organic matter decomposition performance is superior. As the added NaCl concentration was increases, the of hydrogen peroxide and ozone concentration increases, and this was thought to increase the quantity of OH radical.