• Title/Summary/Keyword: Doping

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The Effects of PZT Ratio and Sr Doping on the Piezoelectric Properties in PZN-PNN-PZT (PZN-PNN-PZT계 압전 조성에서 PZN 함량과 Sr Doping이 압전 특성에 미치는 영향)

  • Choi, Jeoung Sik;Lee, Chang Hyun;Shin, Hyo Soon;Yeo, Dong Hun;Lee, Joon Hyung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.1
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    • pp.19-23
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    • 2018
  • In a Pb-included piezoelectric composition, $Sr_yPb_{1-y}[(Zn_{1/3}Nb_{2/3})_x-(Ni_{1/3}Nb_{2/3})_{0.2}-(Zr_{0.46}Ti_{0.54})_{0.8-x}]O_3$ was selected in order to attain high piezoelectric properties. According to the PZN ratio (x) and the amount of Sr doping (y), the crystal structure, microstructure and piezoelectric properties were measured and evaluated. In the case of Sr 4 mol% doping, the piezoelectric properties were the highest for a PZN ratio of 0.1. In this condition, the grain size was larger and the intensity was higher. With the PZN ratio fixed and varying the Sr doping, the piezoelectric properties increased until 10 mol% doping and then decreased for over 12 mol% doping. In the case of x=0.1 and y=10 mol%, the best piezoelectric properties were obtained, i.e., $d_{33}=660pC/N$ and $k_p=68.5%$, and these values seem to be related to the grain size and crystal structure.

A Review on Safety of Herbal Medicines for Doping (한약의 도핑 안전성에 대한 고찰)

  • Kim, Ju-ran;Yun, Sung Joong;Lee, Yun Kyu;Lee, Hyun-Jong;Kim, Jae Soo
    • The Journal of Korean Medicine
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    • v.40 no.3
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    • pp.139-176
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    • 2019
  • Objectives: This study aims to review the herbal medicines containing substances banned by World Anti-Doping Agency(WADA), and to consider criteria for the using of herbal medicines. Methods: Using foreign(Pubmed, Cochrane, Embase, Google Scholar, WANFANG, CiNii) and domestic databases (NDSL, OASIS, RISS), we analyzed the content and pharmacokinetics of the prohibited substances in herbal medicines. Results: Herbal medicines containing the prohibited substances proposed in Korea, China, and Japan are Ephedrae Herba, Cannabis Semen, Strychni Semen, Strychni Ignatii Semen, Pinelliae Tuber, Rhizoma Pinelliae, Chelidonii Herba, Papaveris Fructus Deseminatus, Liriopis Tuber, Rehmanniae Radix Recens, Cistanchis Herba, Ponciri Fructus Immaturus, Aurantii Fructus Immaturus, Moschus, Testudinis Plastrum, Otariae Testis et Penis, and Hominis Placenta. Of these, when using Ephedrae Herba, Cannabis Semen, Strychni Semen, Moschus, Strychni Ignatii Semen, and Otariae Testis et Penis, caution is needed in relation to the doping test. Other herbal medicines are considered safe for the doping test. In addition, by analyzing data related to higenamine added to the WADA's prohibited list of doping since 2017, we don't recommend using Nelumbinis Plumula. And in the case of the other herbal medicines containing higenamine, it is considered that care should be taken in doping test depending on the amount of usage. Conclusions: As a result of analyzing the herbal medicines which are in prohibited list about doping, we were able to know the criteria and precautions to use when prescribing the herbal medicines. Further research will be needed about common used herbal medicines and the amount of detection depending on extraction and boiling method.

Effect of Sm2O3 Doping on Microstructure and Electrical Properties of ZPCCA-Based Varistors

  • Nahm, Choon-Woo
    • Korean Journal of Materials Research
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    • v.31 no.10
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    • pp.539-545
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    • 2021
  • The effect of Sm2O3 doping on the microstructure and electrical properties of the ZPCCA-based varistors is comprehensively investigated. The increase of doping content of Sm2O3 results in better densification (from 5.70 to 5.82 g/cm3) and smaller mean grain size (from 7.8 to 4.1 ㎛). The breakdown electric field increases significantly from 2568 to 6800 V/cm as the doping content of Sm2O3 increases. The doping of Sm2O3 remarkably improves the nonlinear properties (increasing from 23.9 to 91 in the nonlinear coefficient and decreasing from 35.2 to 0.2 µA/cm2 in the leakage current density). Meanwhile, the doping of Sm2O3 reduces the donor concentration (the range of 2.73 × 1018 to 1.18 × 1018 cm-3) of bulk grain and increases the barrier height (the range of 1.10 to 1.49 eV) at the grain boundary. The density of the interface states decreases in the range of of 5.31 × 1012 to 4.08 × 1012 cm-2 with the increase of doping content of Sm2O3. The dielectric constant decreases from 1594.8 to 507.5 with the increase of doping content of Sm2O3.

A Study on the Anti-Doping Communication from Niklas Luhmann's Systems Theory, its' Limits and Tasks (니클라스 루만(Niklas Luhmann)의 체계이론적 관점에서 본 반-도핑 커뮤니케이션의 한계와 과제)

  • Song, Hyeong-Seok
    • 한국체육학회지인문사회과학편
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    • v.55 no.2
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    • pp.11-22
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    • 2016
  • Researcher has reviewed the diagnosis and strategies under the perspective of the Luhmann's system theory, and has concluded the following. The existing anti-doping communication has adopted a personalization strategy, in which the causes and responsibilities of doping is attributed to persons. Therefore, the problem-solving measures are all most the individual-centered such as detection, punishment, education to enlighten. Such a strategy is not only to simplify the doping phenomenon, which is a result of the complex entanglement of the interests of the sport system and its surroundings functional systems, to a result of the individual decision-making according to free will, but also to contribute to hiding of the internal and structural problems of systems through the self-reflection blocking of sport system and its surrounding systems, and to inactivate the anti-doping efforts by imposing demand which player or trainer can not easy accept. The effective strategy for combating doping should be conceptualized and executed in all levels of problems.

2D transition-metal dichalcogenide (WSe2) doping methods for hydrochloric acid

  • Nam, Hyo-Jik;Park, Jin-Hong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.291.2-291.2
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    • 2016
  • 3D semiconductor material of silicon that is used throughout the semiconductor industry currently faces a physical limitation of the development of semiconductor process technology. The research into the next generation of nano-semiconductor materials such as semiconductor properties superior to replace silicon in order to overcome the physical limitations, such as the 2-dimensional graphene material in 2D transition-metal dichalcogenide (TMD) has been researched. In particular, 2D TMD doping without severely damage of crystal structure is required different conventional methods such as ion implantation in 3D semiconductor device. Here, we study a p-type doping technique on tungsten diselenide (WSe2) for p-channel 2D transistors by adjusting the concentration of hydrochloric acid through Raman spectroscopy and electrical/optical measurements. Where the performance parameters of WSe2 - based electronic device can be properly designed or optimized. (on currents increasing and threshold voltage positive shift.) We expect that our p-doping method will make it possible to successfully integrate future layered semiconductor devices.

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Mechanical properties of polycrystalline 3C-SiC thin films with various doping concentrations (도핑농도에 따른 다결정 3C-SiC 박막의 기계적 특성)

  • Kim, Kang-San;Chung, Gwiy-Sang
    • Journal of Sensor Science and Technology
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    • v.17 no.4
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    • pp.256-260
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    • 2008
  • This paper describes the mechanical properties of poly(polycrystalline) 3C-SiC thin films with various doping concentration, in which poly 3C-SiC thin fil's mechanical properties according to the n-doping concentration 1($9.2{\times}10^{15}cm^{-3}$), 3($5.2{\times}10^{17}cm^{-3}$), and 5%($6.8{\times}10^{17}cm^{-3}$) respectively were measured by nano indentation. In the case of $9.2{\times}10^{15}cm^{-3}n$-doping concentration, Young's modulus and hardness were obtained as 270 and 30 GPa, respectively. When the surface roughness according to n-doping concentrations was investigated by AFM(atomic force microscope), the roughness of poly 3C-SiC thin films doped by 5% concentration was 15 nm, which is also the best of them.

Iodine Doping of Pentacene and its Electrical Properties

  • Rahim, Abdur;Lee, Young-Kyu;Lee, Chi-Young;Lee, Jae-Gab
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.238.2-238.2
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    • 2011
  • Organic thin film transistors (OTFTs) have been attracting considerable attention because of their potential use in low-cost, large area, electronic devices such as flexible displays, biochemical sensors, and smart cards. In past several years, gold/pentacene has been frequently used in OTFTs because of the high mobility of pentacene and the high work function of gold. To improve the performance of the OTFTs contact area doping of pentacene with p-doping materials are well known. In this work we demonstrated selectively contact area doping of pentacene with Iodine vapor. For effective doping elevated pentacene layer under the source-drain area was deposited and exposed to Iodine vapor. We got better electrical performance for elevated pentacene structure rather than planer structure with relatively high field-effect mobility.

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