• 한국세라믹학회지
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• 제48권2호
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• pp.178-182
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• 2011

The Rutile - type brown pigments doped with chromium were synthesized. Samples of $Ti_{1-x}Cr_xO_2$ ($0.02{\leq}X{\leq}0.08$) were synthesized by the solid state method. Solid solution limit of Cr contents to the rutile structure and its coloration were studied. Optimum composition was investigated accordingly. The characteristics of synthesized pigments were analyzed by XRD, SEM, Raman spectroscopy and UV. As a result, single phase of Rutile was observed from $1000^{\circ}C$ by XRD. The maximum limit of solid solution was 0.06 mole $Cr_2O_3$. The glazed sample showed brown color, and the value of CIE $L^*a^*b^*$ was $L^*$ 33.27, $a^*$ 10.64, $b^*$ 20.84.

• Korean Chemical Engineering Research
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• 제46권4호
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• pp.813-818
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• 2008

고체 산화물 연료전지(SOFC)에서 Ni/YSZ 음극 촉매를 이용한 내부 개질 반응 시 코크 형성에 의한 촉매 비활성화 문제점을 개선하기 위해 음극에 여러가지 조촉매(Ce, Co, Cu, Cr, Mn, Pd, K, $K_2Ti_2O_5$)들을 첨가하여 그 영향을 조사하였다. $H_2O/CH_4=1.5$ 몰비, 800의 반응 조건하에서 수증기 개질 반응을 행한 결과 전이금속산화물들은 코크형성을 억제하는 효과가 없었고 메탄전환율도 오히려 감소하였다. Potassium을 담지한 Ni/YSZ의 경우는 초기에는 뚜렷한 코크형성 억제 효과가 있었으나 반응 후 42시간이 지나면 휘발에 의한 Potassium함량 감소로 급격한 촉매활성의 저하가 일어났다. 격자 구조에 Potassium이 내장된 $K_2Ti_2O_5$를 5% 혼합한 Ni/YSZ의 경우에는 장기간 운전에도 반응 활성이 줄어들지 않아서 음극 촉매의 코크 억제용 첨가제로 적용될 수 있음을 알았다. 반응시간에 따른 촉매의 비활성화는 촉매 표면에서의 graphidic carbon의 생성 때문으로 밝혀졌다.

• ETRI Journal
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• 제31권6호
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• pp.688-694
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• 2009

In this paper, we present the results of a preliminary study on the piezoelectric energy harvesting performance of a Zr-doped $PbMg_{1/3}Nb_{2/3}O_3-PbTiO_3$ (PMN-PZT) single crystal beam. A novel piezoelectric beam cantilever structure is used to demonstrate the feasibility of generating AC voltage during a state of vibration. The energy-harvesting capability of a PMN-PZT beam is calculated and tested. The frequency response of the cantilever device shows that the first mode resonance frequency of the excitation model exists in the neighborhood of several hundreds of hertz, which is similar to the calculated value. These tests show that several significantly open AC voltages and sub-mW power are achieved. To test the possibility of a small scale power source for a ubiquitous sensor network service, energy conversion and the testing of storage experiment are also carried out.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.117.1-117.1
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• 2011

We have demonstrated Forst-type resonance energy transfer (FRET) in the quasi-solid type dye-sensitized solar cells between organic fluorescence materials as an energy donor doped in polymeric gel electrolyte and ruthenium complex as an energy acceptor on surface of $TiO_2$. The strong spectral overlap of emission/absorption of energy donor and acceptor is required to get high FRET efficiency. The judicious choice of energy donor allows the enhancement of light harvesting characters of energy acceptor in quasi-solid dye sensitized solar cells which increase the power conversion efficiency. The enhanced light harvesting effect by the judicious choice/design of the fluorescence materials and sensitizing dyes permits the enhancement of photovoltaic performance of DSSC.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.180-180
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• 2015

Solution processed Resistive random access memory (ReRAM)은 간단한 공정 과정, 고집적도, 저렴한 가격, 대면적화 플라즈마 데미지 최소화 등의 장점으로 차세대 비휘발성 메모리로 써 많은 관심을 받고 있으며, 주로 high-k 물질인 HfOx, TiOx, ZnO 가 이용 된다. IGZO와 ZTO와 같은 산화물 반도체는 높은 이동도, 대면적화, 넓은 밴드갭으로 인하여 투명한 장점으로 LCDs (Liquid crystal displays)에 이용 가능하며, 최근에는 IGZO와 ZTO에서 Resistive Switching (RS) 특성을 확인한 논문이 보고되면서 IGZO와 ZTO를 ReRAM의 switching medium와 TFT의 active material로써 동시에 활용하는 것에 많은 관심을 받고 있다. 이와 같은 산화물 반도체는 flat panel display 회로에 TFT와 ReRAM의 active layer로써 집적가능 하며 systems-on-panels (SOP)에 적용 가능하다. 하지만 IGZO 보다는 ZTO가 In과 Ga을 포함하지 않기 때문에 저렴하다. 그러므로 IGZO를 대신하는 물질로 ZTO가 각광 받고 있다. 본 실험에서는 ZTO film에 Al을 doping하여 메모리 특성을 평가하였다. 실험 방법으로는 p-type Si에 습식산화를 통하여 SiO2를 300 nm 성장시킨 기판을 사용하였다. 그리고 Electron beam evaporator를 이용하여 Ti를 10 nm, Pt를 100 nm 증착 한다. 용액은 Zn와 Tin의 비율을 1:1로 고정한 후 Al의 비율을 0, 0.1, 0.2의 비율로 용액을 각각 제작하였다. 이 용액을 이용하여 Pt 위에 spin coating방법을 이용하여 1000 rpm 10초, 6000 rpm 30초의 조건으로 AZTO (Al-ZnO-Tin-Oxide) 박막을 증착한 뒤, solvent 및 불순물 제거를 위하여 $250^{\circ}C$의 온도로 30분 동안 열처리를 진행하였다. 이후 Electron beam evaporator를 이용하여 top electrode인 Ti를 100 nm 증착하였다. 제작된 메모리의 전기적 특성은 HP 4156B semiconductor parameter analyzer를 이용하여 측정하였다. 측정 결과, AZTO (0:1:1, 0.1:1:1, 0.2:1:1)를 이용하여 제작한 ReRAM에서 RS특성을 얻었으며 104 s이상의 신뢰성 있는 data retention특성을 확인하였다. 그리고 Al의 비율이 증가할수록 on/off ratio가 증가하고 endurance 특성이 향상되는 것을 확인하였다. 결론적으로 Al을 doping함으로써 ZTO film의 메모리 특성을 향상 시켰으며 AZTO film을 메모리와 트랜지스터의 active layer로써 활용 가능할 것으로 기대된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.68-69
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• 2011

The process of charge transfer at the interface between two semiconductors or between a metal and a semiconductor plays an important role in many areas of technology. The optimization of such devices requires a good theoretical description of the interfaces involved. This, in turn, has motivated detailed mechanistic studies of interfacial charge-transfer reactions at metal/organic, organic/organic, and organic/inorganic semiconductor heterojunctions. Charge recombination of photo-induced electron with redox species such as oxidized dyes or triiodide or cationic HTM (hole transporting materials) at the heterogeneous interface of $TiO_2$ is one of main loss factors in liquid junction DSSCs or solid-state DSSCs, respectively. Among the attempts to prevent recombination reactions such as insulating thin layer and lithium ions-doped hole transport materials and introduction of co-adsorbents, although co-adsorbents retard the recombination reactions as hydrophobic energy barriers, little attention has been focused on the anchoring processes. Molecular engineering of heterogeneous interfaces by employing several co-adsorbents with different properties altered the surface properties of $TiO_2$ electrodes, resulting to the improved power conversion efficiency and long-term stability of the DSSCs. In this talk, advantages of the coadsorbent-assisted sensitization of N719 in preparation of DSSCs will be discussed.

• Journal of the Optical Society of Korea
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• 제18권3호
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• pp.256-260
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• 2014

Columnar-structured cesium iodide (CsI) scintillators doped with thallium (Tl) are frequently used as x-ray converters in medical and industrial imaging. In this study we investigated the imaging characteristics of CsI:Tl films with various reflective layers-aluminum (Al), chromium (Cr), and titanium dioxide ($TiO_2$) powder-coated on glass substrates. We used two effusion-cell sources in a thermal evaporator system to fabricate CsI:Tl films on substrates. The scintillators were observed via scanning electron microscopy (SEM), and scintillation characteristics were evaluated on the basis of the emission spectrum, light output, light response to x-ray dose, modulation transfer function (MTF), and x-ray images. Compared to control films without a reflective layer, CsI:Tl films with reflective layers showed better sensitivity and light collection efficiency, and the film with a $TiO_2$ reflective layer showed the best properties.

• 한국재료학회지
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• 제13권12호
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• pp.846-849
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• 2003

Doping effect of various ions in Bi-layered ferroelectric $SrBi_2$$Nb_2$$O_{9}$ (SBN) ceramics was studied. Undoped SBN ceramic and SBN ceramics doped with $Ba^{2＋}$, $Pb^{2＋}$,$ Ca^{2＋}$ , $Bi^{3＋}$ , $La^{3＋}$ , $Ti^{4＋}$ , $Mo^{6＋}$ , and $W^{6＋}$ ions were made by a solid state reaction. Dielectric constants were measured with temperature. Ferroelectric transition temperature decreased with $Pb^{2＋}$ , $Ba^{2＋}$ , $La^{3＋}$ doping, but the transition temperature increased with $Ca^{2＋}$ , $Bi^{3＋}$ , $Ti^{4＋}$, $Mo^{6＋}$ , or$ W^{6＋}$ ionic doping. These results show that the ion size plays an important role in the ferroelectricity of SBN ceramic.

• 전기화학회지
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• 제24권3호
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• pp.52-64
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• 2021

Li_1+xFe_xTi_2-x(PO₄)_3-y(BO₃)_y (x = 0.2, 0.5)계 유리에서 Fe doping과 BO₃ 치환이 유리 또는 결정화유리(glass-ceramics) 전해질의 구조적, 열적 및 전기적 특성에 미치는 영향을 조사하였다. 또한, Li_1.5Fe_0.5Ti_1.5(BO₃)₃ 유리분말을 소결하고, 소결 온도에 따른 결정상과 이온전도도 영향도 검토하였다. Li_1+xFe_xTi_2-x(PO₄)_3-y(BO₃)_y 유리에서 Fe²⁺ 및 Fe³⁺ 이온은 network modifier로서 FeO₆ 팔면체를 형성하거나 network former로서 유리망목구조에 들어가 FeO₄ 유사 사면체를 형성하면서 유리의 구조를 변화시키는 것으로 확인되었다. 한편, BO₃는 BO₃ 또는 BO₄ 그룹을 형성하였는데, BO₃ 치환량이 작은 경우 boron은 (PB)O₄ 망목구조를 형성하지만, BO₃ 치환량이 증가하면 붕소이상현상(boric oxide anomaly)이 생겨나면서 BO₄는 BO₃로 변화하고 이로 인하여 비가교산소(non-bridging oxygen)가 증가하였다. BO₃ 치환은 유리전이온도와 결정화 온도를 낮추는 효과가 있으며, Fe 첨가량이 증가하면 Fe³⁺의 일부는 Fe²⁺로 환원되며, 유리전이온도와 연화온도를 낮아지게 하고 결정화온도를 높아지게 하는 것으로 확인되었다. Li_1+xFe_xTi_2-x(PO₄)_3-y(BO₃)_y (x = 0.2, 0.5) 유리에서 BO₃ 함량이 증가함에 따라 이온전도도는 증가하였으며, x = 0.2 및 0.5에서 각각 8.85×10^-4 및 1.38×10^-4S/cm의 이온전도도값을 나타내었다. 본 연구에서 얻어진 높은 이온전도도는 Fe³⁺의 산화상태 변화와 붕소이상현상에 의한 BO₃ 생성 및 이로 인한 비가교산소의 생성에 기인한 것으로 생각된다. Li_1.5Fe_0.5Ti_1.5(BO₃)₃ 유리를 800℃에서 소결한 결과 이온전도도가 급격히 저하되었는데 이는 결정화유리 분말이 고온에서 유리화되었기 때문으로 생각된다. 따라서 유리분말을 800℃에서 소결한 후, 다시 460℃에서 조핵하고, 600℃에서 결정성장을 시킨 결과, 이온전도도가 열처리전과 동등 수준으로 회복되는 것을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).