• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.97.2-97.2
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• 2007

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1322_1323
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• 2009

The $V_{1.85}W_{0.15}O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $400^{\circ}C$ were 38.11, with a dielectric loss of 1%, respectively. Also, the TCR values of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $400^{\circ}C$ were about -3.45%/K.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.101-102
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• 2006

금속을 도핑 함으로써 전기전도도가 향상될 것으로 생각되는 산화바나듐 나노선에 대하여 열처리 전후의 전기적 특성을 비교하였다. sol-gel 방법으로 만들어진 산화바나듐 xerogel($V_{1.66}Mo_{0.33}O_5{\cdot}nH_2O$)을 $Si_3N_4$ 절연막이 성장된 Si기판위에 분산시키고 Ti/Au으로 전극을 증착한 후 열처리 한 것과 하지 않은 두 시료의 전류-전압특성을 비교 분석하였다.

• 한국자기학회지
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• 제16권3호
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• pp.168-172
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• 2006

졸-겔(sol-gel) 방법을 이용하여 제작된 산소결핍(oxygen vacancy)들을 내포하는 Ni 도핑된 루타일(rutile) 구조의 $TiO_{2-{\delta}}$ 박막들에 대하여 그 자기적 성질 및 관련된 전자구조적 성질에 대하여 조사분석 하였다. $TiO_{2-{\delta}}$:Ni 박막들에서 상온 강자성이 관측되었으며 Ni 도핑량이 증가할수록 포화 자화량($M_s$)이 점차 감소하여 6 at% 이상에서 일정한 값으로 유지되었다. 이와 같은 Ni 도핑량 6 at% 이하에서의 강자성 현상은 산소결핍 자리에 속박된 전자를 매개로 그 주위에 존재하는 불순물 이온들의 자기 능률들이 강자성 정렬을 이루게 되는 자기 폴라론(magnetic polaron)의 형성에 의한 것으로 해석된다. 소량의 Ni 도핑 시 각 이온당 최대 $3.7{\mu}_B/Ni$의 큰 $M_s$ 값이 나타났으며 6 at% 이상에서의 일정한 $M_s$ 값은 Ni cluster 형성에 의한 것으로 해석된다. 이와 같은 Ni cluster의 존재는 시료들에 대한 Hall 측정 결과 나타난 Ni 도핑량 증가에 따르는 p-n 전도성 전이를 설명하여 줄 수 있다.

• 센서학회지
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• 제9권1호
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• pp.36-43
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• 2000

휘발성염기질소가스 중에서 TMA 가스의 선택성을 향상시키고 동작온도가 낮고 저농도에서 감도가 높은 반도체가스센서를 제작하기 위해 ZnO에 촉매불순물 $Al_2O_3$, $TiO_2$, $In_2O_3$ 및 $V_2O_5$등의 다양한 무게비가 함유된 ZnO계 타겟을 제작한 후 RF 마그네트론 스펏터링법으로 산소분위기에서 박막을 증착시켰다. 센서의 전기적 안정성을 위해 $700^{\circ}C$에서 1시간동안 산소분위기에서 열처리한 ZnO계 박막으로 센서를 제작한 후 DMA(dimethylamine), 암모니아($NH_3$) 및 TMA(trimethylamine) 가스의 감도를 조사하였다. TMA 가스선택성은 DMA 및 암모니아가스에 대한 TMA 가스의 감도비($S_{TMA}/S_{DMA}$, $S_{TMA}/S_{NH3}$)로 정의하였다. $ZnO+Al_2O_3(4\;wt.%)+TiO_2(1\;wt.%)+In_2O_3(1\;wt.%)$ 센서는 160 ppm의 가스농도와 동작온도 $300^{\circ}C$에서 DMA와 암모니아가스에 대한 TMA 가스의 최대 감도비가 각각 5.9와 26을 나타내어 선택성이 향상되었음을 알 수 있었다.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2008년도 추계학술대회 논문집
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• pp.205-210
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• 2008

Titanium-doped indium oxide (ITiO) films were prepared on soda-lime glass substrate using a magnetic null discharge (MND) sputter source. The ITiO thin films containing 10wt.% Ti showed the minimum resistivity of $\rho=5.5{\times}10^{-3}{\Omega}-cm$. The optical transmittance increases from 70% at 450 nm to 80% at 700 nm in visible spectrum. Photoelectron peaks for In 3d, Ti 2p, O 1s and C1s were detected for the ITiO film in the binding energy range of 0 to 1100 eV. The surface roughness of the sample showed a change from 10 nm to 50 nm. The ITiO film used for TCO layer of DSCs exhibited an energy conversion efficiency of about 3.8% at light intensity of 100 mW/$cm^2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.632-635
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• 2003

[ $(Ba,Sr,Ca)TiO_3$ ] powders, prepared by the sol-gel method, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen printing techniques on alumina substrates. The dielectric properties were investigated for various composition ratio and $Nb_2O_5$ doping contents. All the BSCT thick films, sintered at $1420^{\circ}C$, showed the typical XRD patterns of a perovskite polycrystalline structure. The Curie temperature and the relative dielectric constant decreased with increasing Ca content and $Nb_2O_5$ doping amount. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) thick films doped with 1.0wt% $Nb_2O_5$ were 1410, 0.65% and 17.29% respectively.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.30.2-30.2
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• 2007

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권1호
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• pp.66-79
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• 2008

Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

• 한국전기전자재료학회논문지
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• 제35권4호
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• pp.407-411
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• 2022

Bulk-sized PbTiO₃ (PT), which is widely known as a high-performance ferroelectric oxide but cannot be fabricated into a monolithic ceramic due to its high c/a ratio, was successfully prepared with a high tetragonality by partially substituting Ni ions for Pb ions using a solid-state reaction method. We found that Ni-doped PT was well-fabricated as a bulk monolith with a significant c/a ratio of ~1.06. X-ray diffraction on as-sintered and crushed samples revealed that NiTiO₃ secondary phase was present at the doping level of more than 2 at.%. Scanning electron microscopic study showed that NiTiO₃ secondary phase grew on the surface of PT specimens regardless of the doping level possibly due to the evaporation of Pb during sintering. We demonstrated that an unconventional introduction of Ni ions into A-site plays a key role on the fabrication of bulk PT, though how Ni ion functions should be studied further. We expect that this study contributes to a further development of displacive ferroelectric oxides with a high c/a ratio.