• Journal of the Korean Ceramic Society
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• v.35 no.10
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• pp.1101-1106
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• 1998

Various $Zn_{2-x}SiO_4$:xMn based green phosphors were investigated in association with a co-dopant. The co-dopant incorporated into the phosphors are believed to alter the internal energy state of $Zn_{2-x}SiO_4$ : xMn So that the improvement in their intensity could be expected. Phosphor samples were prepared using the solid state reaction therein raw powders are mixed in the acetone and successively fired at $1300^{\circ}C$ for 4 hour. The fired powders are also heated up to $900^{\circ}C$ for 2 hour in the reduced atmoshpere and thereby giving The fired powders are also heated up to $900^{\circ}C$ for 2 hour in the reduced atmosphere and thereby giving rise to conspicuous enhancement of radiative efficiency. Basically the 0.08 mole ratio of the Mn con-centrations has the maximum value of the intensity so that a co-dopant are added to this Mn con-centration. When the Mg is co-doped with Mn luminescent intensity is proven to be promoted significantly.

• Journal of Sensor Science and Technology
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• v.18 no.3
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• pp.234-238
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• 2009

We have investigated the effects of dopant on the thermoelectric properties that $La_{(1-x)}M_xCoO_3$(M=Sr, Ca;x=0, 0.1) bulk ceramics fabricated by the conventional solid state reaction method. The Seebeck coefficient of $La_{(1-x)}M_xCoO_3$(M=Sr, Ca;x=0, 0.1) bulk ceramics was measured at wide temperature range from 300 K to 673 K. The thermoelectric properties(Seebeck coefficient and electrical resistivity) depend strongly on the kinds of dopants. Sr and Ca dopant decrease the Seebeck coefficient. Density of sintered $La_{0.9}Sr_{0.1}CoO_3$ ceramic at 1523 K was 7.12 $g/cm^2$ and Seebeck coefficient was 35 ${\mu}V/K$ at 663 K. However, the electrical resistivity of the Sr doped sample was low and stable.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.294-294
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• 2007

Spinel cathode material $LiMn_2O_4$ is currently studied as a promising cathode material for lithium ion secondary batteries for future applications because of it is low cost, easy to be prepared and capable to be operated in high voltage range. However as a cathode material, $LiMn_2O_4$ performs a poor capacity retention which leads to short cycle life. In this study, stoichiometric $LiMn_2O_4$ was synthesized with granulation method with ion substitution to stabilize its structure and niobium doping to improve its conductivity. These well-mixed powders were calcined at $850^{\circ}C$ for 6 hours and its properties were investigated. Correlations of dopant and electrochemical properties were examined as well.

• Korean Journal of Materials Research
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• v.9 no.4
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• pp.349-354
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• 1999

The temperature dependences of the Hall coefficient, carrier mobility, electrical resistivity, Seebeck coefficient, thermal conductivity, and figure-of-merit of the undoped and $CdI_2$-doped 90% $Bi_2Te_3-10% Bi_2Se_3$, single crystals, grown by the Bridgman method, have been characterized at temperatures ranging from 77K to 600K. The saturated carrier concentration and degenerate temperature of the undoped 90% $Bi_2Te_3-10% Bi_2Se_3$ single crystal are $5.85\times10_{18}cm^{-3}$ and 127K, respectively. The scattering parameter of the 90% $Bi_2Te_3-10% Bi_2Se_3$ single crystal is determined to b -0.23, and the electron mobility to hole mobility ratio ($\mu_e/\mu_h)$ is 1.45. The bandgap energy at 0K of the 90% <$Bi_2Te_3-10% Bi_2Se_3$ single crystal is 0.200 eV. Adding $CdI_2$as a donor dopant, a maximum figure-of-merit of $3.2\times10^{-3}/K$$CdI_2$-doped specimen.

• Korean Journal of Materials Research
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• v.22 no.11
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• pp.631-635
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• 2012

Nickel oxide was doped with a wide range of concentrations (mol%) of Aluminum (Al) by solvothermal synthesis; single-phased nano powder of nickel oxide was generated after calcination at$900^{\circ}C$. When the concentration of Al dopant was increased, the reduced intensity was confirmed through XRD analysis. Lattice parameters of the synthesized NiO powder were decreased after treatment of the dopant; parameters were increased when the concentration of Al was over the doping limit (5 mol% Al). The binding energy of $Ni^{2+}$ was chemically shifted to $Ni^{3+}$ by doping $Al^{3+}$ ion, as confirmed by the XPS analysis. The tilted structure of the synthesized NiO with 5 mol% Al dopant and the polycrystalline structure of the $Ni_{0.75}Al_{0.25}O$ were observed by HR-TEM analysis. The electrical conductivity of the newly synthesized NiO was highly improved by Al doping in the conductivity test. The electrical conductivity values of the commercial NiO and the synthesized NiO with 5 mol% Al dopant ($Ni_{0.95}Al_{0.05}O$) were 1,400 s/cm and 2,230 s/cm at $750^{\circ}C$, respectively. However, the electrical conductivity of the synthesized NiO with 10 mol% Al dopant ($Ni_{0.9}Al_{0.1}O$) decreased due to the scattering of free-electrons caused by the large number of impurity atoms; the electrical conductivity of $Ni_{0.9}Al_{0.1}O$ was 545 s/cm at $750^{\circ}C$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.117-117
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• 2003

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.10a
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• pp.117-121
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• 1997

It is shown theoretically that uniform axial dopant concentration distribution can be made throughout the crystal by continuous Czochralski process. Numerical simulation are performed for the transient two-dimensional convection-diffusion model. A typical value of the growth and system parameters for Czochralski growth of p-type, 4 inches silicon crystal was used in the numerical calculations. Using this model with proper model parameter, the axial segregation in batchwise Czochralski growth can be described. It is studied by comparing with the experimental data. With this model parameter, the uniform axial concentration distribution of dopant is predicted in continuous Czochralski process.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1069-1071
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• 1995

The electrical properties of Al/TiN/Ti contact are investigated at submicron contacts. The contact resistance and contact leakage current are dependent on metallization, surface dopant concentration, semiconductor surface treatment and contact plug ion implantation. In this paper, the contact resistance and contact leakage current are studied according to surface dopant concentration, semiconductor surface treatment and contact plug ion implantation at 0.8 micron contact. The contact resistance and contact leakage current increases with increasing substrate ion concentration. HF cleaning represents high contact resistance but low contact leakage current while CDE cleaning represents low contact resistance but high contact leakage current. Contact plug ion implantation decreases contact resistance but increases contact leakage current. Specially, RTA represents good electrical properties.

• Journal of the Korean Ceramic Society
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• v.53 no.3
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• pp.338-342
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• 2016

ZnO thin film co-doped with F and Al was prepared on a glass substrate via simple non-alkoxide sol-gel spin coating. For a fixed F concentration, the addition of Al co-dopant was shown to reduce the resistivity mainly due to an increase in electrical carrier density compared with ZnO doped with F only, especially after the second post-heat-treatment in a reducing environment. There was no effective positive contribution to the reduction in resistivity due to the mobility enhancement by the addition of Al co-dopant. Optical transmittance of the ZnO thin film co-doped with F and Al in the visible light domain was shown to be higher than that of the ZnO thin film doped with F only.

• Carbon letters
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• v.17 no.1
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• pp.29-32
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• 2016

This paper addresses the effect of dopants on the electronic properties of zigzag (8, 0) semiconducting single walled carbon nanotubes (SWCNTs), using extended Hückel theory combined with nonequilibrium Green’s function formalism. Through appropriate dopant concentrations, the electronic properties of SWCNTs can be modified. Within this context, we present our ongoing investigation on (8, 0) SWCNTs doped with nitrogen. Quantum confinement effects on the electronic properties of the SWCNTs have also been investigated. The obtained results reveal that the electronic properties of SWCNTs are strongly dependent on the dopant concentration and modification of electronic structures by hydrogen confinement.