• Proceedings of the KIEE Conference
• /
• 2007.07a
• /
• pp.1275-1276
• /
• 2007

For fabrication of $BaTiO_3$ system Ferroelectric thick films, (Ba,Sr,Ca)$TiO_3$ (BSCT) powders, prepared by using the alkoxide-based sol-gel method, were doped $MnCO_3$ as acceptor and $Dy_{2}O_{3}$ as donor. $MnCO_3$ and $Dy_{2}O_{3}$-doped (Ba,Sr,Ca)$TiO_3$ thick films were fabricated by screen printing techniques on high purity alumina substrates. The structure and dielectric properties were investigated with variation of $Dy_{2}O_{3}$ amount. As a result of the differential thermal analysis(DTA), exothermic peak was observed at around $670^{\circ}C$ due to the formation of the polycrystalline perovskite phase. All the BSCT thick films, sintered at $1420^{\circ}C$ for 2h, showed the typical XRD patterns of perovskite polycrystalline structure and no pyrochlore phase was observed. The average grain size and thickness of specimens no doped with $Dy_{2}O_{3}$ was 1.32mm, 52mm, respectively. The relative dielectric constant decreased and dielectric loss increased with increasing amount of $Dy_{2}O_{3}$ dopant, the values of the BSCT thick films no doped with $Dy_{2}O_{3}$ were 4043 and 0.4% at 1 kHz, respectively. The relative dielectric constant gradually decreased in the measured frequency range from 0.1 to 100 kHz

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.07a
• /
• pp.403-406
• /
• 2000

The piezoelectric properties and the doping effect of N $b_2$ $O_{5}$ and Mn $O_2$for 0.95PbZ $r_{x}$ $Ti_{x}$ $O_3$+0.05Pb(M $n_{0.42}$ $W_{0.26}$S $b_{0.32}$) $O_3$ compositions have been investigated. In the composition of 0.95PbZ $r_{0.54}$ $Ti_{0.46}$ $O_3$+0.05Pb(M $n_{0.42}$ $W_{0.26}$S $b_{0.32}$) $O_3$the Values Of $k_{p}$ find and $\varepsilon$$_{33}$ $^{T}$ are maximized, but $Q_{m}$ Was minimized ( $k_{p}$ =0.51, $Q_{m}$ =1750). The grain size was suppressed and the uniformity of grain was improved with doping concentration of N $b_2$ $O_{5}$ for 0.95PbZ $r_{0.54}$ $Ti_{0.46}$ $O_3$+0.005Pb(M $n_{0.42}$ $W_{0.26}$S $b_{0.32}$) $O_3$sample. The values of $k_{p}$ increased and the values of $Q_{m}$ slightly decreased when 0.5 wt% of N $b_2$ $O_{5}$ is doped. And the values of $k_{p}$ was the same formation of the N $b_2$ $O_{5}$ dopant when 0.5 wt% of M $n_2$ $O_{5}$ is doped. But the values of $Q_{m}$ was deeply decreased when 0.5 wt% of Mn $O_2$is doped. As a experiment results under high electric field driving, this piezoelectric ceramics are very stable. Conclusively, piezoelectric ceramic compsiton investigated at this paper is suitable for application to high power piezoelectric devices.. devices..ices.. devices..

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.141-142
• /
• 2005

To investigate the ZnO thin films which is interested in the next generation of short wavelength LEDs and Lasers, our ZnO thin films were deposited by RF sputtering system. At sputtering process of ZnO thin films, substrate temperature, work pressure respectively is $300^{\circ}C$ and 5.2 mTorr, and the purity of target is ZnO 5N. The thickness of ZnO thin films was about $1.9{\mu}m$ at SEM analysis after sputtering process. Phosphorus (P) and arsenic (As) were diffused into ZnO thin films sputtered by RF magnetron sputtering system in ampoule tube which was below $5\times10^{-7}$ Torr. The dopant sources of phosphorus and arsenic were $Zn_3P_2$ and $ZnAs_2$. Those diffusion was perform at 500, 600, and $700^{\circ}C$ during 3hr. We find the condition of p-type ZnO whose diffusion condition is $700^{\circ}C$, 3hr. Our p-type ZnO thin film has not only very high carrier concentration of above $10^{19}/cm^3$ but also low resistivity of $5\times10^{-3}{\Omega}cm$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.10
• /
• pp.814-820
• /
• 2009

Antimony (Sb) doped ZnO thin films (0.1 at.%) were deposited on sapphire (0001) substrates at various temperatures (200 - 600$^{\circ}C$) by using pulsed laser deposition technique. All the thin films have been characterized by X-ray diffractometer, atomic force microscopy and spectrophotometer to investigate their structural, morphological and optical properties, respectively. Hall measurements were also carried out to identify the electrical properties of the thin films. These thin films were constituted in wurtzite structure with the preferential orientation of (002) diffraction plane and had as high as 80% optical transmission in the visible range. The bandgap energy also was determined by spectrophotometer which was around 3.28 eV. Hall measurements results revealed that the Sb dope ZnO thin film (0.1 at.%) grown at $500^{\circ}C$ exhibited p-type conduction with a carrier concentration of $8.633\times10^{16}\;cm^{-3}$, a mobility of $1.41\;cm^2/V{\cdot}s$ and a resistivity of $51.8\;\Omega{\cdot}cm$. We have successfully achieved p-type conduction in antimony doped ZnO thin films with low doping level even though the electrical properties are not favorable. This paper suggests the feasibility of p-type doping with large-size-mismatched dopant by using pulsed laser deposition.

• Membrane Journal
• /
• v.16 no.4
• /
• pp.276-285
• /
• 2006

Acid-doped sulfonated poly(aryl ether benzimidazole) (S-PAEBI) copolymers were synthesized by a direct polymerization technique and a doping with phosphoric acid as a dopant, and the polymer electrolyte membranes were fabricated from them by a solution casting method. To optimize the reaction condition, the degree of sulfonation and doping level were varied in the ranges of $0{\sim}60%\;and\;0.7{\sim}5.7$, respectively. Physiochemical properties of the doped membranes were investigated by AFM, TGA and the measurement of proton conductivity. It was found that proton conductivities depend on doping levels of membranes. Conductivity determined at the condition of $130^{\circ}C$ and no humidity was $7.3{\times}10^{-2}S/cm$ for the $H_3PO_4$-doped PAEBI membrane with a doping level of 5.7.

• Applied Science and Convergence Technology
• /
• v.26 no.4
• /
• pp.70-73
• /
• 2017

The dielectric constant and loss of poling/non-poling was measured in the $Pb_{1-3x/2}La_x[(Mg_{1/3}Ta_{2/3})_{0.66}Zr_{0.34}]O_3$ samples. The addition of $La^{3+}$ to the $Pb_{1-3x/2}La_x[(Mg_{1/3}Ta_{2/3})_{0.66}Zr_{0.34}]O_3$ did not cause a large change in grain size. But the addition of $La^{3+}$ did show transition temperature, which shifted toward low temperature in the $Pb[(Mg_{1/3}Ta_{2/3})Zr]O_3$ systems. In addition, the dielectric and pyroelectric properties (${\varepsilon}{\sim}20000$, $p{\sim}0.03C/m^2K$) of this system using $La^{3+}$ have been greatly improved. Pyroelectrics $Pb_{0.97}La_{0.02}(Mg_{1/3}Ta_{2/3})_{0.66}Zr_{0.34}]O_3$ system was found to have a relatively high ferroelectric FOMs ($F_V{\sim}0.035m^2/C$, $F_D{\sim}0.52{\times}10^{-4}Pa^{-1/2}$) at room temperature. Spontaneous polarization showed a value of $0.27{\sim}0.35C/m^2$ in the composition added to $La^{3+}$. The piezoelectric constant ($d_{33}=350{\sim}490pC/N$) and electromechanical coupling factor ($k_P=0.25{\sim}0.35$) are obtained in $Pb_{1-3x/2}La_x[(Mg_{1/3}Ta_{2/3})_{0.66}Zr_{0.34}]O_3$ compositions with $La^{3+}$ dopant.

• Korean Journal of Materials Research
• /
• v.16 no.10
• /
• pp.647-651
• /
• 2006

A new class of compounds in the form of skutterudite structure, Fe doped $CoSb_3$ with a nominal composition of $Fe_xCo_{4-x}Sb_{12}$ ($0{\leq}x{\leq}2.5$), were synthesized by mechanical alloying of elemental powders followed by vacuum hot pressing. Nanostructured, single-phase skutterudites were successfully produced by vacuum hot pressing using as-milled powders without subsequent heat-treatments for the compositions of $x{\leq}1.5$. However, second phase was found to form in case of $x{\geq}2$, suggesting the solubility limit of Fe with Co in this system. Thermoelectric properties including thermal conductivity from 300 to 600 K were measured and discussed. Lattice thermal conductivity was greatly reduced by introducing a dopant up to x=1.5 as well as by increasing phonon scattering in nanostructured skutterudite, leading to enhancement in the thermoelectric figure of merit. The maximum figure of merit was found to be 0.32 at 600 K in the composition of $Fe_xCo_{4-x}Sb_{12}$.

• Journal of the Korean institute of surface engineering
• /
• v.48 no.5
• /
• pp.211-217
• /
• 2015

To fabricate white LED having a high color rendering index value, red color phosphor mixed with the green color phosphor together in the blue chip, namely the blue chips with RG phosphors packaging is most favorable for high power white LEDs. In our previous papers, we reported on successful syntheses of $Sr_{2-}$ $Si_5N_8:Eu^{2+}$ and $CaAlSiN_3$ phosphors for red phosphor. In this work, for high power green phosphor, greenemitting ternary nitride $Ba_3Si_6O_{12}N_2:Eu^{2+}$ phosphor was synthesized in a high frequency induction furnace under $N_2$ gas atmosphere at temperatures up to $1400^{\circ}C$ using $EuF_3$ as a raw material for $Eu^{2+}$ dopant. The effects of molar ratio of component and experimental conditions on luminescence property of prepared phosphors have been investigated. The structure and luminescence properties of prepared $Ba_3Si_6O_{12}N_2:Eu^{2+}$ phosphors were investigated by XRD and photoluminescence spectroscopy. The excitation spectra of $Ba_3Si_6O_{12}N_2:Eu^{2+}$ phosphors indicated broad excitation wavelength range of 250 - 500 nm, namely from UV to blue region with distinct enhanced emission spectrum peaking at ${\approx}530nm$.

• Journal of the Korean Applied Science and Technology
• /
• v.19 no.2
• /
• pp.103-107
• /
• 2002

Diphosphine dinuclear gold(I) complexes were synthesized from the reaction of bridged diphosphines and gold ions. As a bridged diphosphine, 1,2-bis(diphenylphosphino)metbane (dppm) or 1,1'-Bis(diphenylphosphino) ferrocene (dppf) was introduced. As anionic ligands, CI was first coordinated to Au, resulting in (diphosphine)$(AuCl)_{2}$. Then, the ligand, SPh, was substituted for Cl in the chloride complex to give (diphosphine)$(AuSPh)_{2}$. As a result, three digold complexes, (dppm)$(AuCl)_{2}$. (I), (dppf)$(AuCl)_{2}$. (II), and (dppf)$(AuSPh_{2}$. (III) were prepared in this study. The thermal properties were investigated at first hand to confirm that the gold complexes were in fact formed. The digold complexes were decomposed above $200^{\circ}C$ while the ligand, dppm or dppf, melts under $180^{\circ}C$ The photoluminescence (PL) spectra of the spin-coated thin films showed the maximum peak at 590, 595, and 540nm for the complex, I, II, and III, respectively. These complexes were found to give the orange color phosphorescence. Therefore, these digold complexes can be candidates for orange-red phosphorescent materials in organic electroluminescent devices (OELD). Further studies on application of the complexes as a dopant in an emitting layer are in progress in our laboratory.

• Polymer(Korea)
• /
• v.35 no.6
• /
• pp.543-547
• /
• 2011

A study has been done to enhance the mechanical properties and processability of electrically conductive polyaniline(PANI) without the polymer's structural alternation. Functionalized acid doped PANI (PANI-DBSA) was prepared by an emulsion polymerization, and dodecylbenzenesulfonic acid (DBSA) played both roles of surfactant and dopant. Also, PANI-DBSA was solution cast blended with high impact polystyrene (HIPS) to produce PANI-DBSA/HIPS blend film. The structure and electrical properties of the conducting polymer blends were observed through UV-vis and FTIR/ATR spectroscopy. A study of the blend was carried by focusing on observation of mechanical and electrical properties based on dispersibility and changes in polymer morphology. The conductivity of the blends was increased by increasing the content of PANI-DBSA, and the sudden increase of conductivity to $3.5{\times}10^{-4}$ S/cm was observed even under a low content of 9 wt%. There was a strong association of continuous network formation with percolation and conductivity in the conducting polymer blends.