• Advances in nano research
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• 제5권1호
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• pp.13-25
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• 2017

We examine the total optical dielectric function (TODF) of impurity doped GaAs quantum dot (QD) from the viewpoint of anisotropy, position-dependent effective mass (PDEM) and position dependent dielectric screening function (PDDSF), both in presence and absence of noise. The dopant impurity potential is Gaussian in nature and noise employed is Gaussian white noise that has been applied to the doped system via two different modes; additive and multiplicative. A change from fixed effective mass and fixed dielectric constant to those which depend on the dopant coordinate manifestly affects TODF. Presence of noise and also its mode of application bring about more rich subtlety in the observed TODF profiles. The findings indicate promising scope of harnessing the TODF of doped QD systems through expedient control of site of dopant incorporation and application of noise in desired mode.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1411-1414
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• 2007

We have developed a top-emitting white organic electroluminescent device (TWOLED) incorporating a low-reflectivity molybdenum (Mo) anode and doped transport layers as well as a dual-layer architecture of doped blue and yellow emitters with the same blue host. The EL efficiency and operational lifetime of TWOLED can be enhanced by a factor of 1.2 and 3.4 than that of standard TWOLED, respectively, with a co-doping technology in yellow emitter by doping another blue dopant. The enhancement in device performances can be attributed to improve the energy transfer efficiency from blue host to yellow dopant through a blue dopant as medium in yellow emitter.

• 전자공학회논문지A
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• 제28A권11호
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• pp.887-893
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• 1991

To take advantage of Ti-polycide, when it is contacted with both n+ and p+ active area of silicon, the effects of BF$_2$ on the formation of Ti-silicide were investigated with RTA temperature and dopant concentration. The intermediate phase C49 TiSi$_2$ appeared at $650^{\circ}C$ and the stable phase C54 TiSi2 was formed at $700^{\circ}C$. And the formation of Ti-silicide was hindered by BF$_2$ doping and this trend was decreased with increasing temperature. The out-diffusion phenomena of BF$_2$ into Ti silicide were not observed. And significantly, the native oxide was a chief factor preventing the formation of Ti-silicides.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1120-1123
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• 2008

Efficient, color stable multi-EML WOLED have been fabricated using newly synthesized yellowish green dopant Ir(chpy)3 or Ir(mchpy)3. The devices have high external quantum efficiency of 11.7%, color rendering index of 87, variation of CIE coordinate of (0.02, 0.01) between 10 to 5000 cd/m2, and low roll-off in efficiency with increasing brightness.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.955-958
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• 2003

We report the photo-(PL) and electroluminescence (EL) properties of new conjugated compounds based on diphenyl benzeneamine moiety, 4,4'-(1,4-phenylenedi-(1E)-2,1-ethenediyl]bis(N,N-diphenyl-benzenamine](PEDB) and 4,4'-([1,1 -biphenyl]-4,4'-diyldi-2,1-ethenediyl)bis[N,N-diphenyl-benzenamine)(BPEDB), as emitting materials and dopant materials. The ITO/m-MTDATA/NPB/DPVBi + BPEDB(1%) /Alq3/LiF/Al device shows blue EL spectrum at 458nm and high efficiency(5.3 cd/A). PEDB as dopant shows also blue EL spectrum around ${\lambda}$ max=463nm and 4.1 cd/A high efficiency in ITO/m-MTDATA/NPB/DPVBi + PEDB(1%)/Alq3/LiF/Al device.

• 한국세라믹학회지
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• 제21권3호
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• pp.266-270
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• 1984

The photoelectrochemical properties of the reduced $TiO_2$ceramic electrodes are investigated varying the thickness of the electrodes and the amounts of $Sb_2O_3$ as dopant. As the thickness of the undoped. $TiO_2$ceramic electrode increases the photocurrent tends to decrease. However for the R-F sputtered $TiO_2$ thin film electrodes the photocurrent tends to increase to about 1$\mu\textrm{m}$ thick and then decreases with increasing thickness. For the $TiO_2$ ceramic electrodes doped with $Sb_2O_3$ the photocurrent decreases with inreasing the amounts of dopant and in the case of rapid cooling in air without reduction treatment the photocurrent shows lower value. Also visible light excitation is observed at 500~550(nm) wavelength for the $TiO_2$ ceramic electrodes doped with $Sb_2O_3$comparing wtih the $TiO_2$ ceramic electrodes (~420nm)

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.667-670
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• 2003

Ni-silicide has low thermal stabiliy. This point is obstacle to apply NiSi to devices. So In this paper, we have studied for obtain thermal stability and analysis of dopant dependency of NiSi. And then we applied Ni-silicide to devices. To improvement of thermal stability, we deposit Ni70/Co10/Ni30/TiN100 to sample. Co midlayer is enhanced thermal stability of NiSi. Co/Ni/TiN, this structure show very difference between n-poly and p-poly in sheet resistance. But Ni/Co/Ni/TiN, structure show less difference. Also junction leakage is good.

• 마이크로전자및패키징학회지
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• 제2권2호
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• pp.31-40
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• 1995

Donor dopant로 WO3, Ta2O5 및 Nb2O5를 첨가한 Zr0.8Sn0.2TiO4 세라믹스의 유전상수 $\varepsilon$r 품 질계수 Q 및 공진주파수의 온도계수 rf에 대하여 연구하였다. 139$0^{\circ}C$에서 32시간 소결시 donor dopant 첨가량에 따른 ZST의 유전상수는 소결밀도의 변화 거동과 잘 일치하였다. 5.5 GHz에서 측정 한 ZST의 품질계수 Q는 ~0.5 mol% WO3 Ta2O5 및 Nb2O5 첨가에 의해 6800에서 8500 정도로 증가 하였다. ZST의 $\tau$f는 0.3 mol%까지의 WO3 첨가량 증가에 따라 0 ppm/$^{\circ}C$에서 -4.6 ppm/$^{\circ}C$까지 음 의 값으로 직선적으로 감소하였으며 0.4 mol% 범위의 Ta2O5 및 Nb2O5 첨가에 의해 -7 ppm/$^{\circ}C$ 까지 직선적으로 감소하였다.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 1998년도 춘계학술발표회논문집(2)
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• pp.181-185
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• 1998

모의 혼합산화물인 (U,Ce)O$_2$ 에 dopant 인 Li$_2$O 와 SiO$_2$ 를 첨가한 소결체의 압축크립변형거동을 수소분위기, 온도 1773K 에서 응력(10-120MPa)을 변화시켜 조사하였다. Dopant 를 첨가할 경우 정상상태 크립변형속도는 첨가하지 않은 경우보다 크게 증가하는 것으로 나타났다. 증가한 원인으로는 Li$_2$O 를 첨가한 경우 우라늄 확산계수의 증가에 기인되며, SiO$_2$ 를 첨가한 경우에는 SiO$_2$ 가 glassy phase 로 입계에 위치하여 입계이동이 용이하게 되어 정상상태 크립변형속도가 증가한 것으로 사료된다. 또한 저응력구간에서 (U,Ce)O$_2$ 의 크립활성화에너지는 109.6 kcal/mol 로 $UO_2$ 의 크립활성화에너지(94.2kca1/mol)보다 더 크게 나타났다.

• 한국세라믹학회지
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• 제25권3호
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• pp.293-299
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• 1988

The effects of flux KCl and dopants, La2O3 and Ta2O5, on the PTCR characteristics in molten salt synthesized BaTiO3 have been studied. The resistivity of BaTiO3 at room temperature decreases with increasing amount of dopant La2O3 up to 0.2 atom%, and then increases with La2O3 content. In case of dopant Ta2O5, it increases with increasing amount ofthe dopant. These results could be explained by observation of the microstructure and defect equation. From the results of complex impedance-frequency characteristics, the grain resistances are almost same but the resistances at the grain boundary are quite different.