• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.1
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• pp.46-51
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• 2006

We present simulation results for a method designed to extract key parameter values of DFB-type LDs based on ASE spectrum measurements. Comparisons were made between the given (actual) and the extracted (estimated) parameters, as well as the associated spectra, fur a variety of DFB-type LDs, and the two sets of results were found to be in excellent agreement.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.3
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• pp.248-251
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• 2009

We have investigated the effect of the quality of 1.3 um distributed feed back laser diode (DFB-LD) on the design of anti-reflection (AR) coatings. Optimal condition of AR coating to prevent internal feedback from both facets and reduce the reflection-induced intensity noise of laser diode was simulated with Macleod Simulator. Coating materials used in this work were ${Ti_3}{O_5}$ and $SiO_2$, of which design thickness were 105 nm and 165 nm, respectively. AR coating films were deposited by Ion-Assisted Deposition system. The electrical and optical properties of 1.3 um laser diode were characterized by Bar tester and Chip tester. Threshold current and slop-efficiency of DFB-LD were 27.56 mA 0.302 W/A. Far field pattern and wavelength of DFB-LD were $22.3^{\circ}(Horizontal){\times}24.4^{\circ}$ (Vertical), 1313.8 nm, respectively.

• 한국연소학회:학술대회논문집
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• 2003.05a
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• pp.75-83
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• 2003

Diode laser absorption system is advantageous of their non-invasive nature, fast response time, high sensitivity and real-time measurement capability. Furthermore, recent advances in room-temperature, near-IR and visible diode laser sources for telecommunication, optical data storage applications are enabling combustion diagnostics system based on diode laser absorption spectroscopy. So, combined with fiber-optics and high sensitive detection strategies, compact and portable sensor system are now appearing for a variety of applications. The objective of this research is to take advantage of distributed feed-back diode laser and develope new gas sensing system. It experimentally found out that the wavelength, power characteristics as a function of injection current and temperature. In addition to direct absorption and wavelength modulation spectroscopy have been demonstrated in these experiments and have a bright prospect to this diode laser system.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.1
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• pp.200-205
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• 1995

The 1st and 2nd-order grating structure for long wavelength DFB(Distributed FeedBack) laser diodes are successfully fabricated on InP substrates by using electron beam lithography and reactive ion etch techniques, and also characterized non-destructively by diffraction analysis without removal of photo-resis layer. A new composite layer made by lifted-off Cr layer on thin SiO2 film is developed and used as an etch mask, because PMMA, the e-beamresist, is unsuitable for reactive ion etch of InP. In addition, it is experimentally confiremed that diffraction analysis makes it possible to predict the grating parameters, and the analysis can be used as a non-destructive on-line test to prevent incomplete gratings from being successively processed.

• Journal of Mechanical Science and Technology
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• v.16 no.11
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• pp.1550-1557
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• 2002

Diode laser sensor for measuring gas temperature and species concentration in combustion chamber was developed using 2.0 tim distributed feed back lasers. To evaluate the measurement sensitivity of diode laser sensor system, CO2 survey spectra near 2.0 Um were measured and compared with the calculated one. This diode laser absorption sensor was applied to measure gas temperatures in a premixed flat flame of CH$_4$-air mixture. Experimental results were in good agreement with the values by an R-type thermocouple within 6.12%. In addition, successful demonstration of measurement of gas temperature and species concentration in a soot flame showed the promising possibility of diode laser absorption sensors for practical combustion system with non-intrusive method.

• Journal of the Korean Society of Combustion
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• v.9 no.3
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• pp.27-35
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• 2004

Diode laser absorption sensors are advantageous because they may provide fast, sensitive, absolute, and selective measurements of species concentration. These systems are very attractive for practical applications owing to its compactness, resonable cost, robustness, and ease of use. In addition, diode lasers are fiber-optic compatible and thus enable simultaneous measurements of multiple species along a line-of-sight. Recent advances of room-temperature, near-IR and visible diode laser sources for telecommunication, optical data storage applications make it possible to be applied for combustion diagnostics based on diode laser absorption spectroscopy. Therefore, combined with fiber-optics and high sensitive detection strategies, compact and portable sensor systems are now appearing for variety of applications. The objectives of this research are to develope a new gas sensing system and to verify feasibility of this system. Wavelength and power characteristics as a function of injection current and temperature are experimentally found out. Direct absorption spectroscopy has been demonstrated in these experiments and has a bright prospect to this diode laser system.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.294-300
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• 2006

We fabricated the distributed feedback (DFB) InP/InGaAs/InP grating structures on InP (100) substrates by metal-organic chemical vapor deposition, and their structural properties were investigated by atomic force microscopy and scanning electron microscopy. Self-assembled InAs/InAlGaAs quantum dots (QDs) were grown on the InP/InGaAs/InP grating structures by molecular beam epitaxy, and their optical properties were compared with InAs/InAlGaAs QDs without grating structure. The duty of the grating structures was about 30%. The PL peak position of InAs/InAlGaAs QDs grown on the grating structure was 1605 nm, which was red-shifted by 18 nm from that of the InAs/InAlGaAs QDs without grating structure. This indicates that the formation of InAs/InAlGaAs QDs was affected by the existence of the DFB grating structures.