• Title/Summary/Keyword: Display device

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Reconstruction Characteristics of MgO (111) Textured Protective Layer by Over-Frequency Accelerated Discharge in AC Plasma Display Pannel

  • Kwon, Sang-Koo;Kim, Jeong-Ho;Moon, Seung-Kyu;Kim, Hyun-Ha;Park, Kyu-Ho;Kim, Sung-Tae
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.224-227
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    • 2007
  • The reconstruction characteristics of MgO (111) textured protective layer by over-frequency accelerated discharge in AC-PDP were investigated and correlated to the variations of electronic structures. The reconstruction process and exaggerated grain growth (EGG) were explained by defect-assisted 2-D nucleation and growth mechanism combined with charged cluster model.

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Improved stability of organic light-emitting diodes with lithium-quinolate doped electron transport layer

  • Choi, Sung-Hoon;Kim, Sang-Dae;Han, Kyu-Il;Lee, Se-Hee;Park, Eun-Jung;Kum, Tae-Il;Jung, Young-Kwan;Lee, Seok-Jong;Lee, Nam-Yang
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.771-774
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    • 2009
  • The Improved stability of organic light emitting diodes (OLEDs) containing lithium-quinolate (Liq) as the ETL doping material is investigated. The lifetime could be improved by threefold using the Liq-doped ETL structure. The improvement was attributed to the Liq-doped ETL, which improved hole-electron balance and has a good electrical stability. Additionally, when the Liq doped device was combined with an Mg/Al cathode, the OLED produced a longer lifetime than other device.

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Properties of Organic light-emitting Diodes with various Electron-transporting layers (전자 수송층에 따른 유기 발광 다이오드 소자의 전기적 특성)

  • Lee, Seok-Jae;Park, Jung-Hyun;Seo, Ji-Hyun;Lee, Kum-Hee;Yoon, Seung-Soo;Kim, Young-Kwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.436-437
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    • 2007
  • Organic light-emitting diodes (OLEDs) were fabricated with the electron dominant complex, 4,7-diphenyl-1, 10-phenanthroline (Bphen) into the traditional electron transporting material of tris (S-hydroxyquinoline) aluminum $(Alq_3)$, neat $Alq_3$ and Bphen as electron-transporting layers (ETLs), respectively. Use of the Bphen material results in efficient electron injection and transport, allowing for high luminous efficiency devices. The devices with neat $Alq_3$(Device1), 1:1 mixed $Alq_3$ : Bphen(Device2), and Bphen(Device3) have efficiency of 15.3cd/A, 16.9cd/A, 20.9cd/A, respectively, at $20\;mA/cm^2$. The efficiency characteristic of device with Bphen is best, but the device that is satisfied high efficiency and stability at once is observed in Device2.

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Poly-Si TFT Technology

  • Noguchi, Takashi;Kim, D.Y.;Kwon, J.Y.;Park, Y.S.
    • Information Display
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    • v.5 no.1
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    • pp.25-30
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    • 2004
  • Poly-Si TFT(Thin Film Transistor) technology are reviewed and discussed. Poly-Si TFTs fabricated on glass using low-temperature process were studied extensively for the application to LCD (Liquid Crystal Display) as well as to OLED(Organic Light Emitting Diode) Display. Currently, one of the application targets of the poly-Si TFT is emphasized on the highly functional SOG(System on Glass). Improvement of device characteristics such as an enhancement of carrier mobility has been studied intensively by enlarging the grain size. Reduction of the voltage and shrinkage of the device size are the trend of AM FPD(Active Matrix Flat Panel Display) as well as of Si LSI, which will arise a peculiar issue of uniformity for the device performance. Some approaches such as nucleation control of the grain seed or lateral grain growth have been tried, so far.

Effect of ZnS Buffer Layer on Inorganic EL Device

  • Kim, Duck-Gon;Park, Lee-Soon;Kum, Tae-Il;Lee, Sang-Mok;Sohn, Sang-Ho;Jung, Sang-Kooun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1629-1631
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    • 2007
  • Significant process in the performance and commercialization of full-color thin-film electroluminescent(EL) displays has been achieved. This is due to the remarkable progress made in the performance of exiting EL phosphors, development of new phosphor materials, and design of new EL phosphor structures. In this paper, we fabricated thinfilm EL devices with ZnS buffer and $BaTiO_3$ electric layer with on top and bottom of phosphor layer. The effect of ZnS and $BaTiO_3$ layer on the luminance of EL device were studied.

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TFD Device with Symmetrical Structure of Flexible Electrode Subject to Flexible Substrate

  • Lee, Chan-Jae;Hong, Sung-Jei;Kim, Won-Keun;Han, Jeong-In
    • Transactions on Electrical and Electronic Materials
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    • v.3 no.4
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    • pp.32-35
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    • 2002
  • In this work, we test electrode material of TFD (Thin Film Diode) device subject to flexible substrate. Al, that is ductile metal, was proper for flexible electrode to fabricate flexible display. The fabricated devices had symmetric electrode structure on both sides of insulation layer. The electrode was made of ductile Al so as to reduce the mismatch of properties between the electrode and substrate. The TFD device was successfully fabricated applying our own etch-free process. Electrical properties were improved by post-annealing.

Fabrication of 7" WVGA flexible electronic paper display by using toner particles

  • Ryu, Gi-Seong;Lee, Chang-Bin;Han, Sang-Kwuon;Chun, Seung-Hee;Song, Chung-Kun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.364-366
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    • 2009
  • We successfully fabricated flexible electronic paper display (EPD) by using toner particles on plastic (PC) substrate. It has high resolution (WVGA : 800 ${\times}$ 480) and 7 inch diagonal viewable image size. The response time was about 0.25 msec at 90 V, a contrast ratio of about 2, a driving voltage of 60 V which we successfully demonstrated to display several images at.

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Dependence of contrast ratio on rib structure in flexible toner type EPD

  • Ryu, Gi-Seong;Lee, Chang-Bin;Han, Sang-Kwuon;Chun, Seung-Hee;Song, Chung-Kun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.886-888
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    • 2009
  • We fabricated flexible electronic paper display(EPD) by using toner particles on plastic (PC) substrate. We observed the relationship between contrast ratio and changes of rib structures. One is a fabrication of ribs on bottom substrate. The display with ribs on bottom substrate had higher contrast ratio about 46% than display with ribs on top substrate. The other is a change of density of rib. The less density of ribs fabricated, the higher the contrast ratio become.

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An Inverted Bottom Emission Organic Light Emitting Device with a New Electron Injection Layer.

  • Lee, You-Jong;Kim, Joo-Hyung;Kwon, Soon-Nam;Hong, Mun-Pyo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.1023-1026
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    • 2007
  • Highly efficient inverted bottom emission organic light emitting device (IBOLED) with a structure of ITO/EIL/Alq3/NPB/WO3/Al was investigated. To enhance electron injection from ITO cathode to Alq3 EML layer, we introduced ultra thin Al layer and Liq layer between ITO and Alq3. The device characteristics showed tune on voltage of 4.5V, the maximum luminance of 21100 Cd/m2 and current efficiencies of 3.56 Cd/A.

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A Study on the Logic Design of Multi-Display Driver (멀티 디스플레이 구동 드라이버 로직 설계에 관한 연구)

  • Jin K.C.;Chun K.J.;Kim S.H.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.10a
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    • pp.212-215
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    • 2005
  • The needs of larger screen in mobile device would be increased as the time of ubiquitous and convergence is coming. And, the type of mobile device has been evolved from bar, slide to row. Recently, the study on the multi-display screen which has seamless gap between two display panel has been published, and moreover the System On Chip(SOC) design strategy of core chip has been the most promising Field-Programmable Gate Array(FPGA) technology in the display system. Therefore, in this paper, we proposed the design technique of SOC and evaluated the effectiveness with Very high speed Hardware Description Language(VHDL) Intellectual Property (IP) for the operation of multi display device driver. Also, This IP design would be to allow any kind of user interface in control system.

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