• The Journal of the Convergence on Culture Technology
• /
• v.3 no.4
• /
• pp.181-184
• /
• 2017

Korea is the world's top ten energy consumer, relying on foreign imports for 97% of its total energy. In 2007, energy imports amounted to US $ 95 billion, accounting for 26.6% of total imports. Thus, fundamental and long-term countermeasures against the same energy crisis It is a fact that is required. Despite the fact that the world is moving rapidly around the world in response to energy saving and low-carbon economic era, domestic movements are relatively slow. In this paper, we developed an IoT data collection device (Gateway) to control Light Things (lighting, signage, display, etc.) built in medium and large facilities under the assumption of hospital facilities, We propose the Light Things control algorithm and data acquisition (Gateway) development technology.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.189-189
• /
• 2016

Recently, many researchers have shown an increased interest in colloidal quantum dots (QDs) due to their unique physical and optical properties of size control for energy band gap, narrow emission with small full width at half maxima (FWHM), broad spectral photo response from ultraviolet to infrared, and flexible solution processing. QDs can be widely used in the field of optoelectronic and biological applications and, in particular, colloidal QDs based light emitting diodes (QDLEDs) have attracted considerable attention as an emerging technology for next generation displays and solid state lighting. A few methods have been proposed to fabricate white color QDLEDs. However, the fabrication of white color QDLEDs using single QD is very challenging. Recently, hybrid nanocomposites consisting of CdTe/ZnO heterostructures were reported by Zhimin Yuan et al.[1] Here, we demonstrate a novel but facile technique for the synthesis of CdTe/ZnO/G.O(graphene oxide) quasi-core-shell-shell quantum dots that are applied in the white color LED devices. Our best device achieves a maximum luminance of 484.2 cd/m2 and CIE coordinates (0.35, 0.28).

• The Journal of the Korea institute of electronic communication sciences
• /
• v.6 no.4
• /
• pp.505-509
• /
• 2011

Home network system makes it available for controlling inside home and for controlling from outside as well with personal computer, cellular phone or smart phone, by connecting diverse information equipments within home such as lighting, gas, and heating equipments with network. Integrated server and wall-pad, which form home network system, have demerits as saying of being high-priced and of needing to implement network infrastructure. This study suggested the intelligent home network system, which uses smart phone of supplementing these merits of home network system. It substituted high-specification input & output equipment in the currently and widely supplied smart phone for display and touch screen, which are user interface part of the existing wall-pad, and implemented the common wall-pad with low cost by concentrating management and control function of home network on smart phone.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.312-312
• /
• 2013

GaN based light emitting diodes (LEDs) are important devices that are being used extensively in our daily life. For example, these devices are used in traffic light lamps, outdoor full-color displays and backlight of liquid crystal display panels. To realize high-brightness GaN based LEDs for solid-state lighting applications, the development of p-type ohmic electrodes that have low contact resistivity, high optical transmittance and high refractive index is essential. To this effect, indiumtin oxide (ITO) have been investigated for LEDs. Among the transparent electrodes for LEDs, ITO has been one of the promising electrodes on p-GaN layers owing to its excellent properties in optical, electrical conductivity, substrate adhesion, hardness, and chemical inertness. Sputtering and e-beam evaporation techniques are the most commonly used deposition methods. Commonly, ITO films on p-GaN by sputtering have better transmittance and resistivity than ITO films on p-GaN by e-bam evaporation. However, ITO films on p-GaN by sputtering have higher specific contact resistance, it has been demonstrated that this is due to possible plasma damage on the p-GaN in the sputtering process. In this paper, we have investigated the advanced sputtering using plasma damage-free p-electrode. Prepared the ITO films on the GaN based LEDs by e-beam evaporation, normal sputtering and advanced sputtering. The ITO films on GaN based LEDs by sputtering showed better transmittance and sheets resistance than ITO films on the GaN based LEDs by e-beam evaporation. Finally, fabricated of GaN based LEDs by using advanced sputtering. And compared the electrical properties (measurement by using C-TLM) and structural properties (HR-TEM and FE-SEM) of ITO films on GaN based LEDs produced by e-beam evaporation, normal sputtering and advanced sputtering. As a result, It is expected to form plasma damage free-electrode, and better light output power and break down voltage than LEDs by e-beam evaporation and normal sputter.

• Korean Journal of Materials Research
• /
• v.26 no.10
• /
• pp.577-582
• /
• 2016

$Dy^{3+}$ and $Eu^{3+}$-codoped $SrWO_4$ phosphor thin films were deposited on sapphire substrates by radio frequency magnetron sputtering by changing the growth and thermal annealing temperatures. The results show that the structural and optical properties of the phosphor thin films depended on the growth and thermal annealing temperatures. All the phosphor thin films, irrespective of the growth or the thermal annealing temperatures, exhibited tetragonal structures with a dominant (112) diffraction peak. The thin films deposited at a growth temperature of $100^{\circ}C$ and a thermal annealing temperature of $650^{\circ}C$ showed average transmittances of 87.5% and 88.4% in the wavelength range of 500-1100 nm and band gap energy values of 4.00 and 4.20 eV, respectively. The excitation spectra of the phosphor thin films showed a broad charge transfer band that peaked at 234 nm, which is in the range of 200-270 nm. The emission spectra under ultraviolet excitation at 234 nm showed an intense emission peak at 572 nm and several weaker bands at 479, 612, 660, and 758 nm. These results suggest that the $SrWO_4$: $Dy^{3+}$, $Eu^{3+}$ thin films can be used as white light emitting materials suitable for applications in display and solid-state lighting.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2011.05a
• /
• pp.351-354
• /
• 2011

Home network system makes it available for controlling inside home and for controlling from outside as well with personal computer, cellular phone or smart phone, by connecting diverse information equipments within home such as lighting, gas, and heating equipments with network Integrated server and wall-pad, which form home network system, have demerits as saying of being high-priced and of needing to implement network infrastructure. Also, there is also risk, which is unavailable for controlling equipments inside home, or can cause malfunction of equipments given the occurrence of a problem about integrated server This study suggested the intelligent home network system, which uses smart phone of supplementing these merits of home network system. It substituted high-specification input & output equipment in the currently and widely supplied smart phone for display and touch screen, which are user interface part of the existing wall-pad, and suggest the common home network system by concentrating management and control function of home network on smart phone.

• Journal of the Institute of Electronics Engineers of Korea CI
• /
• v.46 no.1
• /
• pp.128-135
• /
• 2009

Techniques for tracking the same region of physical space with the temporal sequences of images by matching the contours of constant phase show robust and stable performance in relative to the tracking techniques using or assuming the constant intensity. Using this property, we describe an algorithm for obtaining the robust motion parameters caused by the global camera motion. First, we obtain the optical flow based on the phase of spacially filtered sequential images on the region in a direction orthogonal to orientation of each component of gabor filter bank. And then, we apply the least squares method to the optical flow to determine the affine motion parameters. We demonstrate hat proposed method can be applied to the vision based pointing device which estimate its motion using the image including the display device which cause lighting condition varieties and noise.

• Journal of the Korean Society of Manufacturing Process Engineers
• /
• v.13 no.2
• /
• pp.64-72
• /
• 2014

In the past, prism patterns have been linear triangular shapeswith a $90^{\circ}$ angle; however, new micro prism patterns having acute angles or obtuse angles have recently been the subject of demandin the display, lighting and photovoltaic industries. Micro-cutting experiments for micro-prism patterns having $60^{\circ}$, $90^{\circ}$, and $120^{\circ}$ angles on an electroplated Ni mold were performed and it was found in this study that the specific cutting resistance increased with a decrease in the tool angles (prism pattern angles). The cause of this variation had been thought to be the increase of the ploughing force due to tip rounding and the friction force due to the edge effect. However, the depth of the cut was large enough that it was possible to neglect these effects. Therefore, this study introduced the concept of representative stress of indentation. The measured stress was varied according to the indentation depth eventhoughthetestedspecimenswereidentical ; the varied stress was termed the representative stress. According to indentation theory, the strain that the Ni mold experienced increased with a decrease in the tool angle. Based on the stress-strain relationship, higher strain means higher stress and higher specific cutting resistance. Therefore, the specific cutting resistance was higher at smaller tool angles that had higher strain and stress.

• Applied Chemistry for Engineering
• /
• v.26 no.6
• /
• pp.725-729
• /
• 2015

Organic light emitting diodes (OLEDs) are regarded as the next generation display and solid-state lighting due to their superb achievements from extensive research efforts on improving the efficiency and stability of OLEDs in addition to developing new materials. Herein, efficient green phosphorescent OLEDs were obtained by using hexaazatrinaphthylene (HAT) derivatives as a hole injection layer. External quantum and current efficiencies of OLEDs were enhanced from 8.8% and 30.8 cd/A to 13.6% and 47.7 cd/A, respectively by inserting a thin layer of HAT derivatives between the ITO and hole transporting layer. The enhancement of OLEDs was found to be originated from the inserted HAT derivatives, which resulted in the optimized hole-electron balance inside the emission layer.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.139-139
• /
• 2010

Ionic Transition Metal Complex based (iTMC) Light-emitting electrochemical cells (LEECs) have been drawn attention for cheap and easy-to-fabricate light-emitting device. LEEC is one of the promising candidate for next generation display and solid-state lighting applications which can cover the defects of current commercial OLEDs like complicated fabrication process and strong work-function dependent sturucture. We have investigated the performance characteristics of LEECs based on poly (3, 4-ethylenedioxythiophene):poly (styrene sulfonate) (PEDOT:PSS)-incorporated transition metal complex, which is tris(2, 2'-bipyridyl)ruthenium(II) hexafluorophosphate in this study. There are advantages using conductive polymer-incorporated luminous layer to prevent light disturbance and absorbance while light-emitting process between light-emitting layer and transparent electrode like ITO. The devices were fabricated as sandwiched structure and light-emitting layer was deposited approximately 40nm thickness by spin coating and aluminum electrode was deposited using thermal evaporation process under the vacuum condition (10-3Pa). Current density and light intensity were measured using optical spectrometer, and surface morphology changes of the luminous layer were observed using XRD and AFM varying contents of PEDOT:PSS in the Ruthenium(II) complex solution. To observe enhanced ionic conductivity of PEDOT:PSS and luminous layer, space-charge-limited-currents model was introduced and it showed that the performances and stability of LEECs were improved. Main discussions are the followings. First, relationship between film thickness and performance characteristics of device was considered. Secondly, light-emitting behavior when PEDOT:PSS layer on the ITO, as a buffer, was introduced to iTMC LEECs. Finally, electrical properties including carrier mobility, current density-voltage, light intensity-voltage, response time and turn-on voltages were investigated.