• The Journal of the Acoustical Society of Korea
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• v.25 no.3
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• pp.107-112
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• 2006

The elastic waves in a plate are dispersive waves due to the characteristics of Lamb waves. However, S0 symmetric mode is less dispersive in the frequency region below the first cut-off frequency. The wave Propagation velocities vary with the direction in anisotropic plates such as Carbon Fiber Reinforced Plastic (CFRP) Plates. The wave vector direction and energy flow vector direction are same in isotropic plates. However, the wave vector direction same as the phase velocity direction is not in accordance with the energy flow direction same as the group velocity direction in anisotropic plates. In this study. the dispersion curves or the phase velocity from anti-symmetric and symmetric Lamb wave dispersion equation are calculated for unidirectional laminated composite plate. Slowness surface is sketched using phase velocity under the first cut-off frequency. The direction and magnitude of group velocity are corrected with this slowness surface. The measured group velocities are in good agreement with the corrected group velocity curve except near the fiber direction zone which is called the cusp region.

• Geotechnical Engineering
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• v.10 no.4
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• pp.103-118
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• 1994

The rapid motion of granular material is microscopically observed, and investigated by continuum theory. From the binary collision phenomenon two different times are introduced : flying time and contact time. The former says the non -stationary motion and at a same time the variation of bulk volume. The latter is operative by a delayed time during the contact and describes the elastic properties of granular material. With both times a dynamic constitutive equation is postulated for four state variables : dispersive pressure, viscosity, thermal diffusivity and energy annihilation rate. The balance laws of mass, momentum and energy which are represented through above four variabls, are applied to the model, in which due to the elastic property the relaxation and energy absorption are explained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.6
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• pp.376-380
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• 2017

In this paper, we prepared a metal alloy resistor with stable thermal electro motive force (thermal EMF) as well as a low temperature coefficient of resistance (TCR) by adjusting the manganese proportion from 3 to 12 wt% in the Cu-Mn-Ni alloy. Composition of the fabricated metal alloy was investigated using energy dispersive X-ray (EDX) analysis. The TCR of each sample was measured as 44.56, 40.54, 35.60, and 31.56 ppm for Cu-3Mn-2Ni, Cu-5Mn-2Ni, Cu-10Mn-2Ni, and Cu-12Mn-2Ni, respectively. All the resistor samples were available for the F grade (${\pm}1%$ of the allowable error of resistance) high-precision resistor. All the samples satisfied the baseline of high thermal EMF (under 3 mV at $60^{\circ}C$); however, Cu-3Mn-2Ni and Cu-5Mn-2Ni satisfied the baseline of low thermal EMF (under 0.3 mV at $25^{\circ}C$). We were thus able to design and fabricate the metal alloy resistor of Cu-3Mn-2Ni and Cu-5Mn-2Ni to have low TCR and stable thermal EMF at the same time.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.2
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• pp.322-328
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• 2002

In wire-electrical discharge machining (W-EDM), the dielectric plays an important role as the working fluid. It affects the material removal rate and the properties of the machined surface. This paper deals with the effects of the electrical conductivity of dielectric and cobalt percentage of sintered carbides on the machining characteristics and the machined surface integrities with deionized water as dielectric. A series of experiments have been performed on sintered carbides having different cobalt contents. Experimental results show that a higher cobalt content of WC decreases the metal removal rate and worsens the surface quality. Lower electrical conductivity of the dielectric results in a higher metal removal rate as the gap between wire electrode and workpiece reduced. Especially, the surface integrities of rough-cut workpiece, wire electrode, and debris were analyzed also through scanning electron microscopy(SEM) and surface roughness tester. By energy dispersive spectrometry(EDS), it is confirmed that micro cracks and some of electrode material are found on the workpiece surface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.4
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• pp.217-220
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• 2014

Graphite electrodes are used for secondary batteries, fuel cells, and super capacitors. Research is underway to increase the reaction area of graphite electrodes. In this study, we have investigated the growth properties of carbon nanowall (CNW) according to the ingredient of gas. Microwave plasma enhanced chemical vapor deposition (MPECVD) system was used to grow CNW on Si substrate with a variety of the reaction gas. The planar and vertical growth conditions of the grown CNWs according to the ingredient of the gas were characterized by a field emission scanning electron microscopy (FE-SEM) and energy dispersive spectroscopy (EDS). The electrical characteristics of CNWs were analyzed using a 4-point probe.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1080-1083
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• 2002

In this paper, we have studied with regard to the use of lasers for modifying the surface properties of silicon in order to improve it's wettability and adhesion characteristics. Using an Nd:YAG pulse laser, the wettability and adhesion characteristics of silicon surface have been developed by an Nd:YAG pulse laser. It was found that the laser treatment of silicon surfaces modified the surface energy. In the result of wetting experiments, by the sessile drop technique using the distilled water, wetting characteristic of silicon after the laser irradiation shows a decreased value of the contact angle. In case of the laser treated silicon surface, laser direct writing of copper lines has been achieved by pyrolytic decomposition of copper formate films$(Cu(HCOO)_2{\cdot}4H_2Q)$, using a focused $Ar^+$ laser beam$(\lambda=514.5nm)$ on the silicon substrates. The deposited patterns were measured by energy dispersive X-ray(EDX), Scanning Electron Microscopy(SEM) and surface profiler($\alpha$-step) to examine the cross section of deposited copper lines and linewidth.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.534-538
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• 2002

Dissimilar friction stir welding of aluminum (AI) alloy 1050 and magnesium (Mg) alloy AZ31 was successfully done in the limited welding parameters. The dissimilar weld showed good quality and facility compared to conventional fusion weld. Transverse cross section perpendicular to the welding direction had no defects. The weld was divided into base material of Al alloy, an irregular shaped stir zone and base material of Mg alloy. The irregular shaped stir zone was roughly located around the initial weld center. The weld interface near plate surface shifted from initial weld centerline to the advancing side. Hardness profile of the weld was heterogeneous, and the hardness value of the stir zone was raised to about 150 Hv to 250 Hv. The mixed phase was identified to intermetallic compound $Mg_{17}$Al$_{12}$ using x-ray diffraction method, energy dispersive x-ray spectroscopy (EDX) and electron probe micro analysis (EPMA). The formation of intermetallic compound $Mg_{17}$Al$_{12}$ during FSW causes the remarkable increase in hardness value in the stir zone.one.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.102-102
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• 2008

Sapphire (${\alpha}-Al_2O_3$) has been used as the substrate of opto-electronic device because of characteristics of thermal stability, comparatively low cost, large diameter, optical transparency and chemical compatibility. However, there is difficulty in the etching and patterning due to the physical stability of sapphire and the selectivity with sapphire and mask materials [1,2]. Therefore, sapphire has been studied on the various fields and need to be studied, continuously. In this study, the etching properties of sapphire substrate were investigated with various $CH_4$/Ar gas combination, radio frequency (RF) power, DC-bias voltage and process pressure. The characteristics of the plasma were estimated for mechanism using optical emission spectroscopy (OES). The chemical compounds on the surface of sapphire substrate were investigated using energy dispersive X-ray (EDX). The chemical reaction on the surface of the etched sapphire substrate was observed by X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to investigate the vertical and slope profiles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.163-163
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• 2008

반도체 소자가 고집적화 되고 고속화를 필요로 하게 됨에 따라, 기존에 사용되었던 알루미늄이나 텅스텐보다 낮은 전기저항, 높은 electro-migration resistance으로 미세한 금속배선 처리가 가능한 Cu가 주목받게 되었다. 하지만 과잉 디싱 현상과 에로젼을 유도하여 메탈라인 브리징과 단락을 초래할 있고 Cu의 단락인 islands를 남김으로서 표면 결함을 제거하는데 효과적이지 못다는 단점을 가지고 있었다. 특히 평탄화 공정시 높은 압력으로 인하여 Cu막의 하부인 ILD막의 다공성의 low-k 물질의 손상을 초래 할 수 있는 문제점을 해결하기 위하여 기존의 CMP에 전기화학을 결합시킴으로서 낮은 하력에서의 Cu 평탄화를 달성 할 수 있는 기존의 CMP 기술에 전기화학을 접목한 새로운 개념의 ECMP (electrochemical-mechanical polishing) 기술이 생겨나게 되었다. 따라서 본 논문에서는 최적화된 ECMP 공정을 위하여 I-V곡선과 CV법을 이용하여 active. passive. trans-passive 영역의 전기화학적 특징을 알아보았고. Cu막의 표면 형상을 알아보기 위해 Scanning Electron Microscopy (SEM) 측정과 Energy Dispersive Spectroscopy (EDS) 분석을 통해 금속 화학적 조성을 조사하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.334-345
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• 2008

컴퓨터의 발달과 더불어 현대사회는 기록하고 보존해야할 정보의 양이 점점 방대해 지고 있다. 그로 인해 자기기록매체처럼 정보를 사용자의 편의에 따라 반복적으로 기록하고 재생할 수 있는 광기록매체에 대한 관심이 증가되고 있다. $Ge_2Sb_2Te_5$(GST)는 기존의 CD-RW나 Floppy Disk(FD)를 대체할 차세대 기록매체로 주목받고 있다. 따라서 본 연구에서는 비정질상과 결정상으로 변하는 성질을 가지고 있는 GST롤 상변화 기록매체로서 이용하기 위해 굴절률을 평가하였다. 시료는 5N의 순도를 갖는 Ge, Sb, Te 물질을 준비하고 조성비에 맞추어서 석영관에 진공 봉입한 후 용융-냉각법으로 벌크를 제작하였고 열증착 방법으로 Si 및 유리 기판위에 1000nm 두께로 박막을 제작하였다. UV-Vis-IR spectrophotometer를 사용하여 반사도와 투과도를 측정하였고 측정한 스펙트럼을 이용하여 Swanepoel method로 굴절률을 계산하였다. 본 연구진이 자체 개발한 계산툴에 실험값을 대입하였고 실험에 의해 얻은 투과도와 계산툴에 의해 얻은 투과도 스펙트럼을 비교하였다.