Two Dimensional Boron Doping Properties in SiGe Semiconductor Epitaxial Layers Grown by Reduced Pressure Chemical Vapor Deposition (감압화학증착법으로 성장된 실리콘-게르마늄 반도체 에피층에서 붕소의 이차원 도핑 특성)
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- Journal of the Korean Institute of Electrical and Electronic Material Engineers
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- v.17 no.12
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- pp.1301-1307
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- 2004