• Nuclear Engineering and Technology
• /
• 제52권8호
• /
• pp.1749-1755
• /
• 2020

In present study, TEM foils of Ni-Mo-Cr alloy were directly irradiated with 30 keV Ar ions to allow direct characterization. The defects evolution and element segregation after irradiation were investigated by TEM and HAADF-EDS linear scanning. At low irradiation doses (1.38 and 2.76 dpa), black dots were formed and grew with increasing dose. Complicated defects including peas-shaped dislocation loops, polygon dislocation networks and large loops were visible in samples irradiated to high doses (13.8 and 27.6 dpa). Meanwhile, dislocation channels appeared, in which defects were swept out. Significant Mo depletions at dislocation lines and grain boundaries were induced by irradiation due to large misfits between Mo-Ni atoms and high content of Mo.

• Nuclear Engineering and Technology
• /
• 제38권7호
• /
• pp.619-638
• /
• 2006

Low temperature irradiation can significantly harden metallic materials and often lead to strain localization and ductility loss in deformation. This paper provides a review on the radiation effects on the deformation of metallic materials, focusing on microscopic and macroscopic strain localization phenomena. The types of microscopic strain localization often observed in irradiated materials are dislocation channeling and deformation twinning, in which dislocation glides are evenly distributed and well confined in the narrow bands, usually a fraction of a micron wide. Dislocation channeling is a common strain localization mechanism observed virtually in all irradiated metallic materials with ductility, while deformation twinning is an alternative localization mechanism occurring only in low stacking fault energy(SFE) materials. In some high stacking fault energy materials where cross slip is easy, curved and widening channels can be formed depending on dose and stress state. Irradiation also prompts macroscopic strain localization (or plastic instability). It is shown that the plastic instability stress and true fracture stress are nearly independent of irradiation dose if there is no radiation-induced phase change or embrittlement. A newly proposed plastic Instability criterion is that the metals after irradiation show necking at yield when the yield stress exceeds the dose-independent plastic instability stress. There is no evident relationship between the microscopic and macroscopic strain localizations; which is explained by the long-range back-stress hardening. It is proposed that the microscopic strain localization is a generalized phenomenon occurring at high stress.

• Advances in nano research
• /
• 제2권1호
• /
• pp.1-14
• /
• 2014

Dislocations are basic crystal defects and represent one-dimensional native nanostructures embedded in a perfect crystalline matrix. Their structure is predefined by crystal symmetry. Two-dimensional, self-organized arrays of such nanostructures are realized reproducibly using specific preparation conditions (semiconductor wafer direct bonding). This technique allows separating dislocations up to a few hundred nanometers which enables electrical measurements of only a few, or, in the ideal case, of an individual dislocation. Electrical properties of dislocations in silicon were measured using MOSFETs as test structures. It is shown that an increase of the drain current results for nMOSFETs which is caused by a high concentration of electrons on dislocations in p-type material. The number of electrons on a dislocation is estimated from device simulations. This leads to the conclusion that metallic-like conduction exists along dislocations in this material caused by a one-dimensional carrier confinement. On the other hand, measurements of pMOSFETs prepared in n-type silicon proved the dominant transport of holes along dislocations. The experimentally measured increase of the drain current, however, is here not only caused by an higher hole concentration on these defects but also by an increasing hole mobility along dislocations. All the data proved for the first time the ambipolar behavior of dislocations in silicon. Dislocations in p-type Si form efficient one-dimensional channels for electrons, while dislocations in n-type material cause one-dimensional channels for holes.

• 한국결정학회지
• /
• 제8권1호
• /
• pp.26-32
• /
• 1997

수열법을 이용하여 압전수정을 성장하고 각종 성장결함을 분석하였다. 4 중량퍼센트 NaOH, 성장온도 $340-360^{\circ}C$, 온도구배 $20-40^{\circ}C$의 성장조건에서 (0001)방향의 ZY 종자결정, 합성수정을 원료로 하였을 경우 성장속도는 0.25-0.65 mm/day 였다. 원료로써 합성수정을 사용하고 저전위 종자결정 위에서 수평 종자결정 배치법으로 성장된 압전수정의 전위밀도는 20.0개/$cm^2$, 에치채널 밀도는 5.0개/$cm^2,\;10\mu$ 이상의 함유물 농도는 2.4개/$cm^3$, 알파값은 0.019였으며, IEC 758규격에 의한 등급분류는 에치채널 밀도 1등급, 함유물 농도 Ia등급, 알파값 A등급이었다.

• Current Photovoltaic Research
• /
• 제2권3호
• /
• pp.88-94
• /
• 2014

The structural, optical and electrical properties of sputter-deposited CIGS films were directly influenced by the sputtering process parameters such as substrate temperature, working pressure, RF power and distance between target and substrate. CIGS thin films deposited by using a quaternary target revealed to be Se deficient due to Se low vapor pressure. This Se deficiency affected the overall stoichiometry of the films, causing the films to be Cu-rich. Current tends to pass through the Cu-Se channels which act as the shunting path increasing the film conductivity. The crystal structure of CIGS thin films depends on the substrate orientation due to the influence of surface morphology, grain size and stress of Mo substrate. The excess of Cu was removed from the CIGS films by KCN treatment, achieving a suitable Cu concentration (referred as Cu-poor) for the fabrication of solar cell. Due to high Cu concentrations on the CIGS film surface induced by Cu-Se phases after CIGS film deposition, KCN treatment proved to be necessary for the fabrication of high efficiency solar cells. Also during KCN treatment, dislocation density and lattice parameter decreased as excess Cu was removed, resulting in increase of bandgap and the decrease of conductivity of CIGS films. It was revealed that Cu-Se secondary phase could be removed by KCN wet etching of CIGS films, allowing the fabrication of high efficiency absorber layer.