• Journal of the Korean Society for Heat Treatment
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• v.22 no.3
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• pp.155-161
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• 2009

An investigation of the deformation behavior of ${\gamma}'-Ni_3Al$ single crystals containing fine dispersion of disordered ${\gamma}$ particles was performed for several different crystal orientations. Deformation structures were observed by the weak-beam method of transmission electron microscopy (TEM). The critical resolved shear stress (CRSS) for (111) [$\bar{1}$01] slie. increases with increasing temperature in the temperature range where (111) slip operates. The CRSS for (111) [$\bar{1}$01] slip is dependent on crystal orientation in the corresponding temperature range. The temperature where the strenjlth reaches a maximum is dependent on crystal orientation; the higher the ratio of the Schmid factors of (010) [$\bar{1}$01] to that of (111) [$\bar{1}$01], the higher the peak temperature. The peak temperatures were increased by the precipitation of y particles for the samples of all orientations. Electron microscopy of deformation induced dislocation arrangements under peak temperature has revealed that most of dislocations are straight screw dislocations. The mobility of screw dislocations decreases with increasing temperature. Above the peak temperature, dislocations begin to cross slip from the (111) [$\bar{1}$01] slip system to the (010) [$\bar{1}$01] slip system, thus decreasing the strength.

• Journal of the Korean Magnetics Society
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• v.15 no.1
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• pp.25-29
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• 2005

Magnetic properties of YIG films grown by solid phase epitaxy (SPE) was measured as a function of temperature with focus on magneto-crystalline and perpendicular magnetic anisotropy. Perpendicular magnetic anisotropy was not induced in the SPE YIG films annealed at low temperature by relaxing residual stress through formation of dislocation. On the contrary the films annealed at high temperature showed perpendicular magnetic anisotropy which shows very low density of dislocation. Perpendicular magnetic anisotropy field decreased linearly up to a high temperature of $230^{\circ}C$ above which magneto-crystalline anisotropy disappeared. Coercivity also decreased linearly with temperature up 세 $230^{\circ}C$. Magneto-crystalline anisotropy of perpendicular anisotropy induced epitaxial (111) YIG films can be measured using $H_k=4K_1/3M_s$. Temperature behavior of initial susceptibility can be successfully explained by Hopkinson effects. Curie temperature of YIG films grown on GGG substrate with high paramagnetic susceptibility can be easily measured using the results.

• Korean Journal of Materials Research
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• v.25 no.11
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• pp.630-635
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• 2015

The fatigue strength of a nickel-base superalloy was studied. Stress-controlled fatigue tests were carried out at $700^{\circ}C$ and 5 Hz using triangular wave forms. In this study, two kinds of testing procedures were adopted. One is the conventional tension-zero fatigue test(R = 0). The other was a procedure in which the maximum stress was held at 1000 MPa and the minimum stress was diverse from zero to 1000 MPa at 24 and $700^{\circ}C$. The results of the fatigue tests at $700^{\circ}C$ indicate that the fracture mechanism changed according to both the mean stress and the stress range. At a higher stress range, ${\gamma}^{\prime}$ precipitates are sheared by a/2<110> dislocation pairs coupled by APB. Therefore, in a large stress range, the deformation occurred by shearing of ${\gamma}^{\prime}$ by a/2<110> dislocations, which brought about crystallographic shear fracture. As the stress range was decreased, the fracture mode gradually changed from crystallographic shear fracture to gradual growth of fatigue cracks. At an intermediate stress range, as it became more difficult for a/2<110> dislocation pairs to shear ${\gamma}^{\prime}$ particles, cracks started to propagate in the matrix, avoiding the harder ${\gamma}^{\prime}$ particles. High mean stress induced creep deformation, that is, ${\gamma}^{\prime}$ particles were sheared by {111}<112> slip systems, which led to the formation of stacking faults in the precipitates. Thus, the change in fracture mechanism brought about the inversion of the S-N curves.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.223.1-223.1
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• 2013

Since sapphire single crystal is one of the materials that have excellent mechanical and optical properties, the single crystal is widely used in various fields, and the demand for the use of substrate of LED devices is increasing rapidly. However, crystal defects such as dislocations and stacking faults worsen the properties of the single crystal intensely. When sapphire wafer of single crystal is used as LED substrate, especially, crystal defects have a strong influence on the characteristics of a film deposited on the wafer. In such a case quantitative assessment of the defects is essential, and the evaluation technique is now becoming one of the most important factors in commercialization of sapphire wafer. Wet etching is comparatively easy and accurate method to estimate dislocation density of single crystal because etching reaction primarily takes place where dislocations reached crystal surface which are chemically weak points, and produces etch pit. In the present study, the formation behavior of etch pits and etching time dependence were studied systematically. Etch pit density(EPD) analysis using optical microscope was also conducted and measurement uncertainty of EPD was studied to confirm the reliability of the results. EPDs and measurement uncertainties for 4 inch sapphire wafers were analyzed in terms of 5 and 21 points EPD readings. EPDs and measurement uncertainties in terms of 5 points readings for 4 inch wafers were compared by 2 organizations. We found that the average EPD value in terms of 5 points readings for a 4 inch sapphire wafer may represent the EPD value of the wafer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.9-9
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• 2009

1 wt % Ga-dope ZnO (ZnO:Ga) thin films with n-type semiconducting behavior were grown on c-sapphire substrates by radio frequency magnetron sputtering at various growth temperatures. The room temperature grown ZnO:Ga film showed the faint preferred orientation behavior along the c-axis with small domain size and high density of stacking faults, despite limited surface diffusion of the deposited atoms. The increase in the growth temperature in the range between $300\sim550^{\circ}C$ led to the granular shape of epitaxial ZnO:Ga films due to not enough thermal energy and large lattice mismatch. The growth temperature above $550^{\circ}C$ induced the quite flat surface and the simultaneous improvement of electrical carrier concentration and carrier mobility, $6.3\;\times\;10^{18}/cm^3$ and $27\;cm^2/Vs$, respectively. In addition, the increase in the grain size and the decrease in the dislocation density were observed in the high temperature grown films. The low-temperature photoluminescence of the ZnO:Ga films grown below $450^{\circ}C$ showed the redshift of deep-level emission, which was due to the transition from $Zn_j$ to $O_i$ level.

• Tribology and Lubricants
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• v.24 no.1
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• pp.27-33
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• 2008

A micro-impression creep machine was designed and developed, adopting a small punch in diameter of 150 um, displacement gage with an accuracy of sub-${\mu}m$ scale, and load-cell with an accuracy of mN scale in order to investigate creep behavior of small solder ball in diameter of less than 1 mm. Creep behavior of lead-free solder ball(Sn-3.0Ag-0.5Cu) in diameter of $760\;{\mu}m$ was investigated in the stress range of $8{\sim}60\;MPa$ and at $303\;K{\sim}393\;K$. The applied load became decreased slightly and continuously in the creep rate of $10^{-4}/s$ range during the current experiments. Also, the machine frame was so sensitive to the environmental temperature that nm scaled displacement recording was unstable according to the change in environmental temperature.

• Transactions of the Korean Society of Pressure Vessels and Piping
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• v.16 no.1
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• pp.92-99
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• 2020

High-temperature mechanical behaviors of Type 316L stainless steel (SS), which is considered as one of the major structural materials of Generation-IV nuclear reactors, were investigated through the tension and creep tests at elevated temperatures. The tension tests were performed under the strain rate of 6.67×10^-4 (1/s) from room temperature to 650℃, and the creep tests were conducted under different applied stresses at 550℃, 600℃, 650℃, and 700℃. The tensile behavior was investigated, and the modeling equations for tensile strengths and elongation were proposed as a function of temperature. The creep behavior was analyzed in terms of various creep equations: Norton's power law, modified Monkman-Grant relation, damage tolerance factor(λ), and Z-parameter, and the creep constants were proposed. In addition, the tested tensile and creep strengths were compared with those of RCC-MRx. Results showed that creep exponent value decreased from n=13.55 to n=7.58 with increasing temperature, λ = 6.3, and Z-parameter obeyed well a power-law form of Z=5.79E52(σ/E)^9.12. RCC-MRx showed lower creep strength and marginally different in creep strain rate, compared to the tested results. Same creep deformation was operative for dislocation movement regardless of the temperatures.

• Journal of the Korean Society of Propulsion Engineers
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• v.20 no.5
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• pp.51-59
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• 2016

STS 321 stainless steel is generally used for a material of high-temperature and high-pressure system including liquid rocket engine. The constitutive equation for flow stress has been suggested using thermal stress component and athermal stress component based on Kocks dislocation barrier model to predict 321 stainless steel's deformation behavior at elevated temperature. The suggested model predicted well the material deformation behaviors of 321 stainless steel at the wide temperature range from room temperature to $500^{\circ}C$.

• Geotechnical Engineering
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• v.6 no.3
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• pp.41-52
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• 1990

To investigate the liquefaction potential of sands, a series of untrained cyclic triaxial compression tests is carried out on the samples of Ottawa, Joomoonjin, Hn river and Hongseung sands. The constitutive equations of sands are derived to explain the mechanical behavior of sands under cyclic stresses, and are applicable to liquefaction analysis. The following results are obtainded in this study. 1. Sands with the lower confining pressure or relative density are to be easily liquefied, and when the amplitude of cyclic stress are large, liquefaction takes places over only a few cycles. 2. Stress ratio, porewater pressure ratio and cyclic shear strains are to be good criteria to evaluate liquefaction potential of sands. 3. Hongseung sands which contains some silty clay shows higher dynamic properties than other sands. 4. The dynamic behaviors of undisturbed Hongseung sand are about same as those of dense sands. It is noted that undisturbed Hongseung sand shows higher liquefaction potential than the samples made by pluviation under same relative density, 5. The constitutive equations of soils under cyclic loads are developed based on the theory of elasto-plasticity, logarithmic stress-strain rela'tionship, non-associated flow rule and the concept of the boundary surface. The derived equations is applicable to predict the behavior of sands under cyclic loads and liquefaction potential with a higher accuracy. 6. Based on results of the study it may be concluded that cracks of the foundations and dislocation of the structures at Hongseung earthquakes(Oct. 7, 1978, Richter scald 5.2) are not brought by the liquefaction process.

• 연구논문집
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• s.33
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• pp.137-145
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• 2003

The effects of antimony addition on the microstructures and creep behavior of AZ31 magnesium alloy have been investigated. Constant load creep tests were carried out at temperatures ranging from $150^{\circ}C$ to $200^{\circ}C$, and an initial stress of 50MPa for AZ31 alloys containing antimony up to 0.84% by weight. Results show that small additions of antimony to AZ31 effectively decreased the creep extension and steady state creep rates. The steady state creep rate of AZ31 was reduced 2.5 times by the addition of 0.84% of antimony. The steady state creep rate of AZ31-0.84Sb alloy was controlled by dislocation climb in which the activation energy for creep was 128 kJ/mole. The microstructure of as-cast AZ31-0.84%Sb alloy showed the presence of $Mg_3Sb_2$ precipitates dispersed throughout the matrix. The main reason for the higher creep resistance in AZ31-Sb alloys is due to the presence $Mg_3Sb_2$, which effectively hindered the movement of dislocations during the elevated temperature creep.