• 한국입자에어로졸학회지
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• 제6권3호
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• pp.131-138
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• 2010

Flexible electronics are the electronics on flexible substrates such as a plastic, fabric or paper, so that they can be folded or attached on any curved surfaces. They are currently recognized as one of the most innovating future technologies especially in the area of portable electronics. The conventional vacuum deposition and photolithographic patterning methods are well developed for inorganic microelectronics. However, flexible polymer substrates are generally chemically incompatible with resists, etchants and developers and high temperature processes used in conventional integrated circuit processing. Additionally, conventional processes are time consuming, very expensive and not environmentally friendly. Therefore, there are strong needs for new materials and a novel processing scheme to realize flexible electronics. This paper introduces current research trends for flexible electronics based on (a) nanoparticles, and (b) novel processing schemes: nanomaterial based direct patterning methods to remove any conventional vacuum deposition and photolithography processes. Among the several unique nanomaterial characteristics, dramatic melting temperature depression (Tm, 3nm particle~$150^{\circ}C$) and strong light absorption can be exploited to reduce the processing temperature and to enhance the resolution. This opens a possibility of developing a cost effective, low temperature, high resolution and environmentally friendly approach in the high performance flexible electronics fabrication area.

• 한국정밀공학회지
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• 제18권1호
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• pp.104-110
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• 2001

The rapid prototyping and tooling technology has been developed. However, most commercial ones currently use resins or waxes as the raw materials. These days, the direct metal deposition methods are being investigated as new rapid prototyping and tooling technology. A fundamental study on rapid prototyping and tooling with wire welding technology using CO2 laser radiation was carried out in this paper. The main focus is to develop a simple commercial rapid prototyping and tooling system with the exiting laser welding technology as output and their microstructure, hardness and tensile strength are examined for the reliability. In addition, its advantages and disadvantages are discussed as a rapid prototyping and tooling system.

• 산업기술연구
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• 제39권1호
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• pp.7-14
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• 2019

Carbon nanotubes (CNT) on metal substrates are definitely beneficial because they can maintain robust mechanical stability and high conductivity between CNT and metal interfaces. Here, we report direct growth of CNT on Ni-based superalloy, Inconel 600, using thermal chemical vapor deposition (CVD) with acetylene feedstock in the growth temperature range of $400-725^{\circ}C$. Furthermore, we studied the effect of substrate pretreatment on the growth yield enhancement and growth temperature decrease of CNT on Inconel 600. Activation energy (AE) for CNT growth was estimated from the CNT height change with respect to the growth temperature. The AE values significantly decreased from 205.03 to 24.35 kJ/mol by the pretreatment of thermal oxidation of Inconel substrate at $725^{\circ}C$ under ambient. Higher oxidation temperature tends to have lower activation energy. The results have shown the importance of pretreatment temperature on CNT growth yield and growth temperature decrease.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1632-1635
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• 2007

We developed a novel growth method of CNTs on metal substrate for device applications, deposited by a triode direct current plasma enhanced chemical vapor deposition (dc-PECVD). With resist-assisted patterning (RAP) method, we had grown CNTs on metal substrate, which were strongly bonded with metal substrate.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.473-474
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• 2006

Aligned carbon nanotubes(CNTs) array were synthesized using direct current plasma-enhanced chemical vapor deposition. The nickel microgrids catalyzed the growth of carbon nanotubes which take on the area of the nickel microgrids. Selective growth of areas of nanotubes was achieved by patterning the nickel film. CNTs were grown on the pretreated substrates at 30% $C_2H_2:NH_3$ flow ratios for 10min. Carbon nanotubes with diameters about 20 nanometers and lengths approximately 720 nanometers were obtained. Morphologies of carbon nanotubes were observed by FE-SEM and TEM.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.356.1-356.1
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• 2014

The Isolation of few-layered transition metal dichalcogenides has mainly been performed by mechanical and chemical exfoliation with very low yields. in particular, the two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential application in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS2 atomic thin layers is still rare. In this account, a controlled thermal reduction-sulfurization method is used to synthesize large-MoOx thin films are first deposited on Si/SiO2 substrates, which are then sulfurized (under vacuum) at high temperatures. Samples with different thicknesses have been analyzed by Raman spectroscopy and TEM, and their photoluminescence properties have been evaluated. We demonstrated the presence of mono-, bi-, and few-layered MoS2 on as-grown samples. It is well known that the electronic structure of these materials is very sensitive to the number of layer, ranging from indirect band gap semiconductor in the bulk phase to direct band gap semiconductor in monolayers. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.

• 한국산학기술학회논문지
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• 제15권12호
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• pp.6980-6985
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• 2014

레이저 직접묘화방법을 이용하여 절연기판($SiO_2$)위에 미세전도성패턴을 제조하였다. 레이저 유도증착공정은 레이저빔이 금속박막에 조사되면 레이저 빔의 빛 에너지가 금속박막에 흡수되어 열에너지로 바뀌면서 열전도에 의한 열분해반응으로 기판위에 증착이 일어난다. 본 논문에서는 금속박막위에 폴리머 코팅을 하여 레이저 직접묘화공정을 적용하여 미세패턴과 3차원 마이크로 구조물 제조에 관한 연구를 수행하였다. 평균 증착율은 전반적으로 레이저출력이 높을 수록 선형적으로 증가하고, 빔 스캔 속도가 감소할수록 증착율은 증가한다는 것을 확인하였다. Polymer 코팅층을 이용하여 미세전극을 증착하여 비저항값을 측정하여, 코팅층을 사용한 경우의 전기전도도가 코팅을 하지 않은 경우보다 약 3배정도 향상되는 것을 확인할 수 있었다.

• 마이크로전자및패키징학회지
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• 제27권1호
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• pp.25-29
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• 2020

광화학증착법 (PMOD; photochemical metal-organic deposition)을 이용하여 photoresist 및 etching 공정없이 pattern 된 TiO_x resistive switching (RS) 소자를 제작 및 그 특성을 평가하였다. Ti(IV) 2-ethylhexanoate를 출발물질로 사용하였으며 UV 노출시간 10 min에 광화학반응이 완료됨을 FTIR 분석을 통하여 확인하였다. 200 ℃ 이하 저온공정에서 직접패턴 된 20 nm 두께의 비정질 TiO_x 박막의 균일한 두께의 패턴형성을 Atomic Force Microscopy를 통하여 확인하였다. 별도의 상형성을 위한 후 열처리 공정 없이 4 ㎛ 선폭의 전극위에 형성된 20 nm 두께의 비정질 TiO_x RS 소자는 4V 동작전압에서 on/off ratio 20의 forming-less RS 특성을 나타내었다. Electrochemical migration에 영향을 미치는 grain boundary가 없어 소자간 신뢰성 향상이 기대되며, flexible 기판 또는 저온공정이 요구되는 메모리 소자 공정에서 PMOD 공정이 응용될 수 있음을 보여준다. Selector를 이용하여 crossbar array 구조를 도입할 경우 매우 간단한 구조의 저비용 메모리 소자를 구현할 수 있을 것으로 기대 된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.207-207
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• 2010

Both ZnO and GaN have excellent physical properties in optoelectronic devices such as blue light emitting diode (LED), blue laser diode (LD), and ultra-violet (UV) detector. The ZnO/GaN heterostructure, which has a potential to achieve the cost efficient LED technology, has been fabricated by using radio frequency (RF) sputtering, pyrolysis, metal organic chemical vapor deposition (MOCVD), direct current (DC) arc plasmatron, and pulsed laser deposition (PLD) methods. Among them, the PLD system has a benefit to control the composition ratio of the grown film from the mixture target. A 500-nm-thick ZnO film was grown by PLD technique on c-plane GaN/sapphire substrates. The post annealing process was executed at some varied temperature between from $300^{\circ}C$ to $900^{\circ}C$. The morphology and crystal structural properties obtained by using atomic force microscope (AFM) and x-ray diffraction (XRD) showed that the crystal quality of ZnO thin films can be improved as increasing the annealing temperature. We will discuss the post-treatment effect on film quality (uniformity and reliability) of ZnO/GaN heterostructures.

• Bulletin of the Korean Chemical Society
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• 제30권7호
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• pp.1573-1578
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• 2009

A computational study of the reactions between Zn-containing species, the products of the thermal decomposition of diethylzinc (DEZn) and water was investigated. The Zn-containing species – $C_2H_5)_2,\;HZnC_2H_5,\;and\;(ZnC_2H_5)_2$ – were assumed to react with water during ZnO metal organic chemical vapor deposition (MOCVD). Density functional theory (DFT) calculations at the level of B3LYP/6-311G(d) were employed for the geometry optimization and thermodynamic property evaluation. As a result dihydroxozinc, $Zn(OH)_2$, was the most probable reaction product common for all three Zn-containing species. A further clustering of $Zn(OH)_2$ was investigated to understand the initial stage of ZnO film deposition. In experiments, the reactions of DEZn and water were examined by in-situ Raman scattering in a specially designed MOCVD reactor. Although direct evidence of $Zn(OH)_2$ was not observed, some relevant reaction intermediates were successfully detected to support the validity of the gas phase reaction pathways proposed in the computational study.