• Journal of Korea Foundry Society
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• v.20 no.3
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• pp.188-196
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• 2000

A vacuum casting was proposed as a new fabrication method of Si wafer for solar cell substrate. It was tried to fabricate a Si plate with good properties and to reduce the production cost by direct vacuum casting. By $5{\sim}10$ cmHg of pressure difference Si plate with $50{\times}46{\times}1.5\;mm^3$ was fabricated. For the preventing of the reaction between graphite mold and Si melt, BN powder coating or BN insert were used. The Si wafer was poly crystalline with 100 ${\mu}m{\sim}1$ mm order of grain size. And there were some twins and dislocations in the grains.

• Proceedings of the KOSOMBE Conference
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• v.1998 no.11
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• pp.72-73
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• 1998

A new method for enzyme immobilization has been developed to remove interference by potential interferents in body fluids. Instead of using electron mediators, we chose direct hydrogen peroxide measurement route. Extremely hydrogen peroxide-selective polymer was coated as an inner membrane to exclude interferents and then glucose oxidase(GOx) was entrapped by electropolymerization of inert monomers. There was no solvent casting step throughout the whole fabrication procedure but all membranes on Pt-Ir electrode were formed by electropolymerization. Thus, membrane thickness, quantity of enzyme loaded and can be controlled by electrochemical parameters. As a result, reproducibility of biosensor characteristics becomes remarkably improved in terms of mass production.

• Laser Solutions
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• v.12 no.4
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• pp.1-5
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• 2009

Conventional patterning based on wet-process for multi-layered film is a relatively complex and costly process though it is a necessary step for fabrication of TFT-LCD module. Recently, a direct pattering by laser has been studied because it is low cost and simple process compared to the wet process. In this work, the selective removal process of multi-layered film (polyimide/indium tin oxide/glass) is studied by modeling the thermal and mechanical behavior for multi-layered structure. Especially, the effects of thickness of polyimide layer are examined.

• Proceedings of the Korean Society of Laser Processing Conference
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• 2006.06a
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• pp.97-100
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• 2006

Picosecond (ps) laser micro-machining has emerged as an attractive method of fabricating high-precision microstructures, especially in metals. In this paper, a metallic mold for diffraction gratings is fabricated with a mode-locked 12 ps $Nd:YVO_4$ laser. Laser pulses with a wavelength of 355nm are irradiated on the surface of NOK 80, a mold material, to generate line patterns. In order to minimize the line width, laser power is set just above the ablation threshold of NOK 80. Results show that the spectrum from the fabricated mold is good enough for some industrial application.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.15-20
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• 2005

We have achieved 180-degree angle of view performance using Super-PVA (S-PVA) technology first time in TFT-LCD industry. 82" full high definition ($1920{\times}1080$) TFT- LCD panel, the world's largest TFT-LCD, have been developed. In addition to the size breakthrough, this product achieves 600nits brightness, over 1200:1 contrast ratio, viewing angle free, 92% color gamut, and 8ms response time. Several key enabling technologies were developed to achieve these specifications, including two transistor direct driven independently controlled S-PVA subpixels, non even area ratio sub-pixels for optimal offaxis gamma, gate overlap driving for larger driving margin, new CCFL technology for higher color gamut, and advanced fabrication techniques including the use of Samsung's new $7^{th}$ generation line.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2009.05a
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• pp.84-87
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• 2009

This paper describes a novel method for fabricating large area metallic stamp with high aspect ratio micro intaglio features. Micro machined brass master with pillar and larger width groove patterns were electroformed to form inverse structures on the large area metallic stamp. This enabled large area metallic stamp with fine micro high aspect ratio micro intaglio features which were small width groove patterns and quadrilateral hole patterns that cannot be fabricated by direct micro machining process. Fabricated large area metallic stamp with high aspect ratio micro intaglio features was measured and analyzed.

• Proceedings of the Korea Technology Innovation Society Conference
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• 2001.05a
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• pp.271-284
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• 2001

Nanotechnology arises from the exploitation of physical, chemical,and biological properties of systems that are intermediate in size between isolated atoms/molecules and bulk materials, where phenomena length scales become comparable to the size of the structure. In addition nanotechnology implies direct control of materials and devices on molecular and atomic scale, including fabrication of functional nanostructures with desired properties, synthesis and processing of nanoparticles, self-assembly, use of quantum effects, etc. This article is a collection of Informations of trend of research and development in the field of nanotechnology in U.S., EU, Japan and Korea. And we would like to include some idea to decide the direction and the strategy for the investment for nanotechnology.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.6
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• pp.70-77
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• 1994

A low noise erbium doped fiber amplifier for optical preamplification has been demonstrated. The amplifier incoporates an optical isolator in its midway to prevent decrease of population inversion at the input port due to backward traveling amplified spontaneous emission. Then, high gain and low noise can be achieved simultaneously. A small signal gain of 34dB and a noise figure of 5.5dB have been achieved. With this amplifier, we obtained a receiver sensitivity of -39.7dBm with back to back configuration and -39.3dBm with 47km normal fiber for 10$^{-9}$BER at 2.5Gbps direct modulated optical signal.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.617-618
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• 2006

A CMOS quadrature Up-converter for a direct-conversion receiver of 5.15-5.825GHz wireless LAN is described. The Up-converter consists of two sub-harmonic mixers, for I and Q channels, and an LO generation network. In order to decrease the number of inductor, I and Q path are merged. The simulation results including all the parasitics show -17.3dB conversion gain at center and -8 dBv oIP3 while consuming 22.968mW under 1.8V supply. The quadrature Up-converter is under fabrication with the other transmitter blocks in a $0.18{\mu}m$ CMOS technology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.307-308
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• 2008

Zinc oxide is a direct band gap wurtzite-type semiconductor with band gap energy of 3.37eV at room temperature. the n-type doped ZnO oxides, B doped ZnO (BZO) is widely studied in TCOs materials as it shows good electrical, optical, and luminescent properties. we focused on the fabrication of B doped ZnO films with glass substrate using the LSMCD at low temperature. And Novel boron-doped ZnO thin films were deposited and characterized from the structural, optical, electrical point of view. The structure, morphology, and optical properties of the films were studied as a function of by employing the XRD, SEM, Hall system and micro Raman system.