• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.464-464
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• 2011

We report a method to fabricate a large-area metal nanowire-grid polarizer. Liquid-bridge-mediated nanotransfer molding (LB-nTM) is based on the direct transfer of metal nanowires from a mold to a transparent substrate via liquid layer. A metal particle solution is used as an ink in the LB-nTM, which can be used for the formation of metal nanowires. The nanowires have higher depth are preferred for high transmittance. The height of nanowires that we made is about 140 nm. Large-area WGP is fabricated with good average transmittance of 74.89% in our measuring range.

• 한국레이저가공학회지
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• 제10권2호
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• pp.17-24
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• 2007

We have studied a laser direct writing lithography(LDWL). This is more important to apply to micro patterning using UV laser. We demonstrate the possibility of LDWL and construct the fabrication system. We use Galvano scanner to process quickly micro patterns from computer data. And laser beam is focused with $F-{\theta}$ lens. AZ5214 and SU-8 photoresist are chosen as experimental materials and a kind of well-known positive and negative photoresist respectively. Laser ablation mechanism depends on the optical properties of polymer. In this paper, therefore we investigate the phenomenon of laser ablation according to the laser fluence variation and measure the shape profile of micro patterned holes. From these experimental results, we show that LDWL is very useful to process various micro patterns directly.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.392-393
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• 2006

Direct Printing Process is a suitable fabrication technique to develope pigment components whose dimensions are in nano. The success of this process depends on the sysmatic preparation of pigment millbase. Conventional millbase dispersions are constituted of the organic pigments, monomer, dispersant and solvents. An experimental study on the rheology of millbase dispersions is presented.

• 전자공학회논문지A
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• 제31A권1호
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• pp.71-76
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• 1994

Schottky diodes have been fabricated using the SDB wafer, and their characteristics have been investigated. For comparison, conventional planar and etched most structure were made on the same substrate. The ideality factor and barrier height of the fabricated devices are found to be 1.03 and 0.77eV, respectively. Breakdown volttge of the etched mesa Schottky diode has been increased to 180V. whereas it is 90V for the planar diode. Schottky diode with an etched mesa exhibits twice improvement in breaktown voltage.

• Bulletin of the Korean Chemical Society
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• 제26권3호
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• pp.409-412
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• 2005

Free-standing nanoporous alumina membrane microtubes with different shapes (rectangular and cylindrical tubes) and variable dimensions were easily fabricated by direct anodization of the aluminum templates of the specified shapes (strip and wire) and dimensions during the electrochemical reaction.

• 한국세라믹학회지
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• 제32권8호
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• pp.931-937
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• 1995

AlN powder and whiskers were synthesized by direct nitridation of aluminum powder in pure nitrogen atmosphere. The nitridation reaction of aluminum powder was initiated by heating the sample to the ignition temperature and the reaction was finished in less than 3 minutes. AlN whisker-shaped morphology was observed predominantly when the sample was heated above 90$0^{\circ}C$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제35회 하계학술대회 초록집
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• pp.338-338
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• 2008

• Bulletin of the Korean Chemical Society
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• 제20권8호
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• pp.875-878
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• 1999

A new concept ？？soft solution processing？？ has been introduced to fabricate advanced solid state materials in an economical, environmentally friendly, and energy and material efficient way. The prepared films show the desired and prospective properties despite of low temperature synthesis and no post-synthesis annealing. Successful examples demonstrate that soft solution processing is capable of preparing advanced materials with planned properties through the easy control of reaction conditions in a suitable aqueous solution in a single synthetic step without huge energy consumption and without any sophisticated equipment.

• 한국정밀공학회지
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• 제33권4호
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• pp.265-270
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• 2016

Recently, many studies have been conducted on the nano-scale fabrication technology using twophoton- absorbed polymerization induced by a femtosecond laser. The nano-stereolithography process has many advantages as a technique for direct fabrication of true three-dimensional shapes in the range over several microns with sub-100 nm resolution, which might be difficult to obtain by using general nano/microscale fabrication technologies. Therefore, two-photon induced nano-stereolithography has been recently recognized as a promising candidate technology to fabricate arbitrary 3D structures with sub-100 nm resolution. Many research works for fabricating novel 3D nano/micro devices using the two-photon nano-stereolithography process, which can be utilized in the NT/BT/IT fields, are rapidly advancing.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.24.2-24.2
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• 2009

Nanostuctures such as nanodot and nanowire have been extensively studied as building blocks for nanoscale devices. However, the direct growth of the nanostuctures at the desired position is one of the most important requirements for realization of the practical devices with high integrity. Self-assembled nanotemplate is one of viable methods to produce highly-ordered nanostructures because it exhibits the highly ordered nanometer-sized pattern without resorting to lithography techniques. And selective epitaxial growth (SEG) can be a proper method for nanostructure fabrication because selective growth on the patterned openings obtained from nanotemplate can be a proper direction to achieve high level of control and reproducibility of nanostructucture fabrication. Especially, SiGe has led to the development of semiconductor devices in which the band structure is varied by the composition and strain distribution, and nanostructures of SiGe has represented new class of devices such nanowire metal-oxide-semiconductor field-effect transistors and photovoltaics. So, in this study, various shaped SiGe nanostructures were selectively grown on Si substrate through ultrahigh vacuum chemical vapor deposition (UHV-CVD) of SiGe on the hexagonally arranged Si openings obtained using nanotemplates. We adopted two types of nanotemplates in this study; anodic aluminum oxide (AAO) and diblock copolymer of PS-b-PMMA. Well ordered and various shaped nanostructure of SiGe, nanodots and nanowire, were fabricated on Si openings by combining SEG of SiGe to self-assembled nanotemplates. Nanostructure fabrication method adopted in this study will open up the easy way to produce the integrated nanoelectronic device arrays using the well ordered nano-building blocks obtained from the combination of SEG and self-assembled nanotemplates.