• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.54-55
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• 2001

Recently, there has been much interests in InGaN/GaN multiple-quantum-well (MQW) structures due to their applicability as optoelectronic devices such as light-emitting diodes (LEDs) and laser diodes [1]. Their ultrafast and physical properties are also of significant interests. Anomalously large acoustic phonon oscillations have been observed using ultrafast lasers in InGaN MQWs [2]. In this study, we have peformed femtosecond pump-probe experiments in the reflection geometry on 5 periods InGaN/GaN MQW LED structure with well width of 20$\AA$ and barrier width of 100$\AA$ at room temperature. (omitted)

• ETRI Journal
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• v.31 no.6
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• pp.642-646
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• 2009

Highly efficient white phosphorescent organic light-emitting diodes with a mixed-host structure are developed and the device characteristics are studied. The introduction of a hole-transport-type host (N, N'-dicarbazolyl-3-3-benzen (mCP)) into an electron-transport-type host (m-bis-(triphenylsilyl)benzene (UGH3)) as a mixed-host emissive layer effectively achieves higher current density and lower driving voltage. The peak external quantum and power efficiency with the mixed-host structure improve up to 18.9% and 40.9 lm/W, respectively. Moreover, this mixed-host structure device shows over 30% enhanced performance compared with a single-host structure device at a luminance of 10,000 $cd/m^2$ without any change in the electroluminescence spectra.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.591-592
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• 2006

Schottky diodes for Radio-frequency identification (RFID) tag integration on chip were designed and fabricated using Samsung electronics System LSI standard $0.18{\mu}m$ CMOS process. Schottky diodes were designed as interdigitated fingers array by CMOS layout design rule. 64 types of Schottky diode were designed and fabricated with the variation of finger width, length and numbers with a $0.6{\mu}m$ guard ring enclosing n-well. Titanium was used as Schottky contact metal to lower the Schottky barrier height. Barrier height of the fabricated Schottky diode was 0.57eV. DC current - voltage measurements showed that the fabricated Schottky diode had a good rectifying properties with a breakdown voltage of -9.15 V and a threshold voltage of 0.25 V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.7
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• pp.486-489
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• 2018

Solution-processed organic light-emitting diodes (OLEDs) have the advantages of low cost, fast fabrication, and large-area devices. However, most studies on solution-processed OLEDs have mainly focused on solution-processable hole transporting materials or emissive materials. Here, we report fully solution-processed green OLEDs including hole/electron transport layers and emissive layers. The electrical and optical properties of OLEDs based on solution-processed TPBi (2,2',2"-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)) as the electron transport layer were investigated with respect to the spin speed and the number of layers. The performance of OLEDs with solution-processed TPBi exhibits a power efficiency of 9.4 lm/W. We believe that the solution-processed electron transport layers can contribute to the development of efficient fully solution-processed multilayered OLEDs.

• Proceedings of the KIPE Conference
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• 2005.07a
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• pp.286-288
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• 2005

Conventional phase shift full bridge (PSFB) converter has serious voltage oscillation problem across the secondary rectifier diodes, which would require the dissipate snubber circuit, thus degrades the overall efficiency. To overcome this problem, a new voltage oscillation reduction technique (VORT) which effectively reduce the voltage oscillation of the secondary rectifier diodes for phase shift 1011 bridge converter is proposed. Therefore, no dissipate snubber for rectifier diodes is needed. In addition, since it has wide zero voltage switching (ZVS) range, high efficiency can be achieved. Operational principle, analysis of voltage oscillation, and design consideration are presented compare with that of the conventional PSFB converter. To confirm the validity of the proposed VORT, experimental results from a 420W, 385Vdc/210Vdc prototype are presented.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1303-1304
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• 2009

In order to apply to the White light emitting diodes (WLEDs), The $Y_2SiO_5:Eu^{3+}$ as red phosphor was synthesized by solid state reaction method. The highest emission of $Y_2SiO_5:Eu^{3+}$ was shown when the $Eu^{3+}$ concentration was 0.02. A single phase was observed from X-ray diffraction (XRD) analysis of synthesized samples and secondary phase wasn't found.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.741-744
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• 2007

The research applied the processes of spin-coating and thermal-evaporating in proper order to deposit the hole transport material N,N'-Bis(naphthalen-1-yl)- N,N'-bis(phenyl)-benzidine (NPB) on the ITO substrate to make flexible organic light emitting diodes (FOLED) with double hole transport layer.

• Journal of Information Display
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• v.8 no.3
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• pp.11-16
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• 2007

Theoretical simulations of spatial distribution of charge carriers and recombination rate, and J-V characteristics of the multi-layer organic light emitting diodes are carried out. Drift-diffusion current transport, field-dependent carrier mobility, exponential and Gaussian trap distribution, and Langevin recombination models are included in this computer model. The simulated results show good agreement with the experimental data confirming the validity of the physical models for organic light emitting diodes.

• Proceedings of the IEEK Conference
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• 2001.06e
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• pp.241-244
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• 2001

This paper proposes a nonlinear impedance circuit composed by diodes and inductors or capacitors. This circuit needs no control circuits and switches, and the impedance value is changed by the polarity of current or voltage, This paper presents one of these applications to improve the input current of capacitor input diode rectifiers. The rectifier using the nonlinear impedance circuit id constructed with four diodes and four capacitors in addition to the conventional rectifiers, that is it has eight diodes and five capacitors, including a DC link capacitor. It makes harmonic components of the input current reduce and the power factor improve. A circuit design method is shown by experimentation and confirmed simulation. It explained that compared conventional pulse-width modulated (PWM)inverter with half pulse-width modulated (HPWM) inverter. Proposed HPWM inverter eliminated dead-time by lowering switching loss and holding over-shooting.

• Journal of Applied Reliability
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• v.9 no.3
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• pp.219-231
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• 2009

Power light emitting diodes(LED) for lighting fittings are so much environment-friendly, highly reliable and consume less energy that they are widely used at home and in industries such as electronics, telecommunications and industrial machineries. However, they are exposed to a very diverse environment and consists of complex components and, therefore needs careful approach to the enhancement and assessment of reliability of the item. In this article reliability assessment criteria for LED are established in terms of performance assessment test, reliability assessment test and accelerated test.