• 전력전자학회:학술대회논문집
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• 전력전자학회 2001년도 전력전자학술대회 논문집
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• pp.514-519
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• 2001

Most of inverters adopt a diode rectifier as an input stage, which has very simple and rugged structure and therefore low cost. In order to properly design the 3-phase diode rectifier with an output smoothing capacitor and input inductors, it is necessary to fully simulate the system due to its nonlinear characteristics. Therefore this paper describes the operating behaviors including the current commutation in detail by using the proposed equivalent circuit, and also proposes the Simulink-based model of the system. The simulation results show the validity of the proposed model in all operating conditions.

• Transactions on Electrical and Electronic Materials
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• 제8권3호
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• pp.131-134
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• 2007

An $ITO/Alq_3/Al$ structure was used to study complex impedance of $Alq_3$ based organic light-emitting diodes. Equivalent circuit was analyzed in a device structure of $ITO/Alq_3/Al$ with a thickness layer of $Alq_3$ of 100 nm. The obtained impedance was able to be fitted using equivalent circuit model of parallel combination of resistance $R_p$ and capacitance $C_p$ with a small series resistance of $R_s$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.103-106
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• 2004

We have studied a conduction mechanism and equivalent circuit analysis in $Alq_3$ based Organic Light Emitting Diode. The conduction mechanism in organic light emitting diode can be classified into three regions; ohmic region, space-charge-limited current (SCLC) region and trap-charge-limited current (TCLC) region depending on the region of applied voltage. Equivalent circuit model of organic light emitting diode can be established using a parallel combination of resistance $R_p$ and capacitance $C_p$ with a small series resistance $R_s$.

• JSTS:Journal of Semiconductor Technology and Science
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• 제10권2호
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• pp.152-159
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• 2010

We propose a semi-analytical current conduction model for depletion-mode n-type nanowire field-effect transistors (NWFETs) with top-gate structure. The NWFET model is based on an equivalent circuit consisting of two back-to-back Schottky diodes for the metal-semiconductor (MS) contacts and the intrinsic top-gate NWFET. The intrinsic top-gate NWFET model is derived from the current conduction mechanisms due to bulk charges through the center neutral region as well as of accumulation charges through the surface accumulation region, based on the electrostatic method, and thus it includes all current conduction mechanisms of the NWFET operating at various top-gate bias conditions. Our previously developed Schottky diode model is used for the MS contacts. The newly developed model is integrated into ADS, in which the intrinsic part of the NWFET is developed by utilizing the Symbolically Defined Device (SDD) for an equation-based nonlinear model. The results simulated from the newly developed NWFET model reproduce considerably well the reported experimental results.

• 전자공학회논문지D
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• 제35D권1호
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• pp.49-58
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• 1998

In this paper, a new equivalent circuit model for quantum-well laser diode (LD) is proposed. The model includes carrier transport effects in the SCH region, and rprovides, in a stable and accurate manner, large-and small-signal responses of laser diode output power as function of injected currents. SPICE simulation was performed using the circuit model and results are presented for L-I characteristics, pulse and frequency responses under various conditions. It is expencted that the new equaivalent circuit model will find useful applications for designing and analyzing OEIC, LD driver circuits, and LD packaging.

• 한국군사과학기술학회지
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• 제12권5호
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• pp.644-651
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• 2009

In this paper, the design results of a $22.5^{\circ}$ diode phase shifter for the RADANT lens and two $11.25^{\circ}$, $22.5^{\circ}$ dielectric phase shift layers for the diode phase shifter are presented. The amount of phase shift introduced by each dielectric layer depends on the thickness and the shape of the metal strip and the electrical property of the diode. The equivalent circuit model is employed to represent the dielectric phase shift layer, and the simulated result of the equival circuit model is compared with the result of the field simulation. The measured data of the fabricated $11.25^{\circ}$, $22.5^{\circ}$ dielectric phase shift layer shows about $2^{\circ}$ phase shift error.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2001년도 종합학술발표회 논문집 Vol.11 No.1
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• pp.267-271
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• 2001

다이오드의 소신호 및 대신호 파라미터 추출은 DC 해석, 외부 기생 소자 추출, 마지막으로 5-파라미터에 의한 내부소자 추출로 이루어진다. DC IV-곡선과 S-파라미터의 curve-fitting으로 내부 파라미터를 구하였고 외부 기생소자는 바이어스에 따라 변하지 성질을 이용하였다. 사용된 소자는 Schottky diode는 SIEMENS사의 BAS125를, Varactor diode는 SONY사의 1t362를, PIN diode는 Hitachi사의 HVM14S를 모델로 사용하였다. 실측을 위해 사용된 소자는 각각 HP사의 HSMS-2822, SONY사의 1t362, HP사의 HSMP-3834을 이용하여 측정하였다.

• Current Photovoltaic Research
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• 제3권4호
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• pp.107-111
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• 2015

Current characteristic curve of an illuminated solar cell was used to determine its reverse saturation current density ($J_0$), ideality factor (n) and resistances, by using numerical diode simulation. High efficiency amorphous silicon, heterojunction crystalline Si (HIT), plastic and organic-inorganic halide perovskite solar cell shows n=3.27 for a-Si and n=2.14 for improved HIT cell as high and low n respectively, while the perovskite and plastic cells show n=2.56 and 2.57 respectively. The $J_0$ of these cells remain within $7.1{\times}10^{-7}$ and $1.79{\times}10^{-8}A/cm^2$ for poorer HIT and improved perovskite solar cell respectively.

• 대한전자공학회논문지
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• 제14권4호
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• pp.15-21
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• 1977

본 논문은 Na2CO3전해액내에서의 무성방전의 전기적 특성을 유정하기 위한 방법을 충방전회로로 구성된 등가회로로써 제안하였다. 전기적 등가회로에는 Zener Diode와 Capacitor를 사용하였고 전기적 특성은 oscilloscope상에 전압전하간의 위상이 간단한 편형사변형으로 나타난다. 이 평형사변형의 면적이 매 주기당 방전 수행시의 Energy이면 이것은 인가한 전압의 파형에 무관하고 인가한 전압의 최대치에 관계한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.438-439
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• 2006

We have used ITO/$Alq_3$/Al structure to study complex impedance in $Alq_3$ based organic light emitting diode. Equivalent circuit was analyzed in a device structure of ITO/$Alq_3$/Al by varying the thickness of $Alq_3$ layer from 60 to 400nm. The impedance results can be fitted using equivalent circuit model of parallel combination resistance $R_p$ and capacitance $C_p$ with a small series resistance $R_s$.