• 대한기계학회:학술대회논문집
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• 대한기계학회 2001년도 춘계학술대회논문집C
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• pp.59-63
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• 2001

A high-impulse, low-power, continuous-shot microthruster has been developed using low boiling temperature liquid-propellant with high viscous fluid-plug. The viscous friction force of the fluid-plug increases the blast pressure and the low boiling temperature liquid-propellant is intended to reduce input power consumption. The three-layer microthruster has been fabricated by surface micromachining as well as bulk micromachining in the size of $7{\times}13{\times}1.5mm^{3}$. A continuous output impulse bit of $6.4{\times}10^{-8}N{\cdot}sec$ has been obtained from the fabricated microthruster using perfluoro normal hexane (FC72) propellant and oil plug, resulting in about ten times increase of the impulse bit using one hundredth electrical input energy compared to the conventional continuous microthruster.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2004년도 춘계학술대회 논문집
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• pp.449-452
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• 2004

To obtain the ultra-sharp tungsten tip, an analog to digital converter circuit aided by a personal computer has been setup. At the moment the lower part of the needle drops off during the etching process, a maximum current change across the reference resistor is detected by the PC interface card and the applied voltage is then cut off within a few milliseconds. Out experiment has been able to fabricate an ultra-sharp tungsten tip ~200 $\AA$ radius with a higher reproduction rate and reliability than the conventional method.

• 한국정밀공학회지
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• 제26권8호
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• pp.29-34
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• 2009

• 한국정보기술응용학회:학술대회논문집
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• 한국정보기술응용학회 2005년도 6th 2005 International Conference on Computers, Communications and System
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• pp.191-194
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• 2005

In this paper the platform system for IEEE 802.15.4 Low Rate WPAN is designed and fabricated. IEEE 802.15.4 Low Rate WP AN system serves the functions and realization of home-area network. According to the IEEE 802.15.4 standard, there are two modes, One is BPSK modulation in 868/915MHz frequency band. The other is O-QPSK modulation in 2.45GHz frequency band. In this paper we implemented the platform system mounted in one PCB board in 868/915MHz frequency band of IEEE 802.15.4 Low Rate WPAN system. We measured that the platform system which consists of digital part and RF part has good performance. Also RF part is realized by design and fabrication of the RF transceiver IC. The key issue is to make the platform system which provides the function of Low Rate WPAN system to meet the requirement of IEEE 802.15.4 standards.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.849-852
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• 2002

Recently, amorphous selenium is used as x-ray conversion material for flat-panel x-ray detector. In this paper, we investigated the effect of breakdown under high voltage and leakage current in PN-type multi-layer structure based on p-type a-Se and n-type conductive thin film. Experimental results show that the multi-layer based detector reduced leakage current because n-type CeO2 conductive layer prevent from hole injection into a-Se layer from collection electrode, Also, the breakdown voltage was improved by dielectric layer between a-Se and top electrode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.553-555
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• 2002

We were fabricated of rf power resisotor on AlN substrates by thick film process. The characteristics of capacitance and microwave are measured by digital LCR meter and Network analyzer(HP8532D). The results are shown that capacitances are slight greater and microwave characteristics are good values.

• 한국진공학회지
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• 제8권4B호
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• pp.536-540
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• 1999

We have developed a refractory WNx self-aligned gate GaAs metal-semiconductor field-effect transistor(MESFET) using $SiO_2$ side-wall process. The MESFET hasa fully ion-implanted, planar, symmetric self-alignment structure, and it is quite suitable for integration. The uniform trans-conductance of 354nS/mm up to Vgs=+0.6V and the saturation current of 171mA/mm were obtained. As high as 43GHz of cut-off frequency hs been realized without any de-embedding of parasitic effects. The refractory WNx self-aligned gate GaAs MESFET technology is one of the most promising candidates for realizing linear power amplifier ICs and multifunction monolithic ICs for use in the digital mobile communication systems such as hand-held phone(HHP), personal communication system (PCS) and wireless local loop(WLL).

• 전자공학회논문지A
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• 제30A권2호
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• pp.63-75
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• 1993

As the CMOS technology becomes the most dominant circuit realization method, the cost problem for the test which includes both the transistor-level FET stuck-on and stuck-off faults and the gatelevel stuck-at faults becomes more and more serious. In accordance, this paper proposes a test set and its generation algorithm, which handles both the transistor-level faults and the gate-level faults, thus can unify the test steps during the IC design and fabrication procedure. This algorithm uses only the logic equation of the given logic function as the input resource without referring the transistor of gate circuit. Also, the resultant test set from this algorithm can improve in both the complexity of the generation algorithm and the time to apply the test as well as unify the test steps in comparing the existing methods.

• 전기학회논문지
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• 제64권2호
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• pp.310-314
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• 2015

To improve the optical performance of the backlight unit with light guide plate(LGP), we investigated the effects of LGP patterns on the brightness and viewing angles properties of the backlight unit. We designed several patterns of LGP and calculated their optical properties by the optical simulation. The results reveal that the highest brightness and wide viewing angle was achieved with the extended-closed-polygon diffusion pattern and upper triangle prism pattern of the LGP.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2001년도 ICCAS
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• pp.158.1-158
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• 2001

An algorithmic gray code analog-to-digital converter (ADC), which is based on gray coding, is proposed in this article. The realization method makes use of a MOS triangular function circuit to provide a high-speed operation and low accumulated error. The proposed ADC is simple, small in size and suitable for fabrication using a standard CMOS process. Simulation results showing the performances of the proposed circuit are also included.