• Title/Summary/Keyword: Diffusion controlled process

검색결과 158건 처리시간 0.032초

용융 Si-C-SiC계에서 $\beta$-SiC 생성기구 ($\beta$-SiC Formation Mechanisms in Si Melt-C-SiC System)

  • 서기식;박상환;송휴섭
    • 한국세라믹학회지
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    • 제36권6호
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    • pp.655-661
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    • 1999
  • ${\beta}$-SiC formation mechanism in Si melt-C-SiC system with varying in size of carbon source was investigated. A continuous reaction sintering process using Si melt infiltration method was adopted to control the reaction sintering time effectively. It was found that ${\beta}$-SiC formation mechanism in Si melt-C-SiC system was directly affected by the size of carbon source. In the Si melt-C-SiC system with large carbon source ${\beta}$-SiC formation mechanism could be divided into two stages depending on the reaction sintering time: in early stage of reaction sintering carbon dissolution in Si melt and precipitation of ${\beta}$-SiC was occurred preferentially and then SIC nucleation and growth was controlled by diffusion of carbon throughy the ${\beta}$-SiC layer formed on graphite particle. Furthmore a dissolution rate of graphite particles in Si melt could be accelerated by the infiltration of Si melt through basal plane of graphite crystalline.

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SOI 구조를 이용한 실리콘 압저항 가속도계의 설계 및 제작 (Design and Fabrication of a Silicon Piezoresistive Accelerometer using SOI Structure)

  • 양희혁;양상식;한상우
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1993년도 정기총회 및 추계학술대회 논문집 학회본부
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    • pp.192-194
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    • 1993
  • In this paper, a silicon piezoresistive accelerometer of which the cantilevers have uniform thickness is designed and fabricated with SOI wafer. The accelerometer consists of a seismic mass and four cantilevers, and is fabricated mainly by the anisotropic etching method using EPW etchant. The fabrication processes are that of the frontside processes including the etching of the cantilevers and the doubleside alignment holes, the diffusion of the piezoresisters and patterning of the contact windows, and the metal connection process, and that of the backside processes including the etching of the shallow cavity and the seismic mass. Because of the uniformity of thickness, the performance of the accelerometer fabricated with SOI wafer is expected to be better than that of accelerometer fabricated by the time-controlled etching method.

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고체철-용융아연의 용해반응 (The Dissolving Reaction of Solid Iron with Molten Zinc)

  • 윤병하;정인상;박경채
    • 한국표면공학회지
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    • 제9권2호
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    • pp.1-7
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    • 1976
  • The dissolving and growth kinetics of intermetallic compounds for the reaction between solid iron and molten zinc were studied under nitorgen atmosphere over the temperature range between470$^{\circ}C$ and 680$^{\circ}C$. The rates of dissolution of solid iron into molten zinc were obtained under a static conditon, The amount of dissolution of sold iron and the growth of intermetalic compounds could be determined by means of microscopy. The thickness of intermetallic compound at a given temperature increases with increasing time, whereas for a given time decreases with increasing temperature . The rate of dissolution is controlled by the diffusion process of iron in the effective boundary layer of molten zinc over the temperature range 470$^{\circ}$-530$^{\circ}C$, 570$^{\circ}$-620$^{\circ}C$, and 650$^{\circ}$-665$^{\circ}C$, while by the surface reaction over the range 530$^{\circ}$-570$^{\circ}C$ and 620$^{\circ}$-650$^{\circ}C$.

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고출력용 산업안전 보조전원의 Supercapacitor (Supercapacitor of Auxiliary Electric Power Source in Industrial Safety for High Output)

  • 허진우;강안수
    • 대한안전경영과학회:학술대회논문집
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    • 대한안전경영과학회 2003년도 추계학술대회
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    • pp.335-343
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    • 2003
  • In the electrode fabrication of unit cell, it was ascertained that electrochemical characteristics were greatly increased with 90 wt.% of BP-20, 5 wt.% of Super P and 5 wt.% of mixed binder [P(VdF-co-HFP) : PVP =7 : 3] The self-discharge of unit cell showed that diffusion process was controlled by the ion concentration difference of initial electrolyte due to the characteristics of Electric Double Layer Capacitor (EDLC) charged by ion adsorption in the beginning, but this by current leakage through the double-layer at the electrode/electrolyte interface had a minor effect and voltages of curves were remained constant regardless of electrode material. The electrochemical characteristics of 2.3 V/3,000 F grade EDLC were as follows: 0.35 m of DC-ESR (100 A discharge), 0.14 mof AC-ESR (AC amplitude 100 mV), 2.80 Wh/kg (3.73 Wh/L) of energy density and 4.64 kW /kg (6.19 kW/L) of power density. Power output was compatible with electric vehicle applications, uninterrupted power supply and engine starter, in due consideration of Ragone relations.

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Membrane Formation of Polyacrylonitrile and Its Copolymer

  • Ha, Seong-Yong;Park, Ho-Bum;Nam, Sang-Yong;Lee, Young-Moo
    • 한국막학회:학술대회논문집
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    • 한국막학회 1997년도 춘계 총회 및 학술발표회
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    • pp.34-35
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    • 1997
  • The phase inversion is a significant phenomena in the preparation of membranes and wet spinning. In both these processes, a viscous dope solution is precipitated in a nonsolvent bath and a porous structure is formed under certain conditions. Such structure could have been considered as a diffusion controlled process. The membrane formation of the polymer solution includes both phase separation and gelation. We have studied the influence of variables on the final structure and tried to control the porosity and ultrafiltration(UF) performance of the polyacrylonitrile(PAN) and its copolymer.

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Controlled Microstructure for Optimum Fatigue Performance

  • Takeda, Yoshinobu;Bergmark, Anders;Alzati, Luigi;Bengtsson, Sven
    • 한국분말야금학회:학술대회논문집
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    • 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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    • pp.132-133
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    • 2006
  • Optimized choice of material for two principally different types of PM components is presented. The first is characterized by high stresses in areas with high stress concentrations (for example synchronizer hubs with very sharp notches, typically <0.25mm in the pre-synchronizer slot and the inner splines). The second type has slightly larger notch radii (small spur gears and sprockets with typically notch radii between 1- 3mm). Diffusion alloyed materials are well suited for sharp notch components. Pre-alloyed materials are also well suited for applications with sharp notches if compressive residual stresses in the notch roots are created by appropriate process control. A free choice of material is available for components with the larger notch radii.

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용융아연도금한 강판의 기술적 성질에 관한 연구 (A Study on Mechanical Properties of Galvanized Steel Plate)

  • 정동원;곽창섭;최종술
    • 한국표면공학회지
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    • 제16권4호
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    • pp.153-159
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    • 1983
  • The growth rate equation of Fe-Zn alloy layer was represented by x = Kt, and hence the growth of alloy layer was considered to be controlled by diffusion process. The constituent of alloy layer formed on the steel surface was identified to be intermetallic compound of Fe3Zn10 and FeZn10. The ultimate tensile strength and elongation of galvanized steel showed a nearly constant value at the thickness below about 30$\mu\textrm{m}$, and both properties decreased with increasing thickness above about 30$\mu\textrm{m}$. In the case of galvanied steel with a great thickness of alloy layer, crack was formed below yield point of base metal, which is considered to be attributed to the alloy layer failure.

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Al 7075 합금의 크리이프 파단수명에 관한 연구(II) (A Study on the Creep Fracture Life of Al 7075 Alloy(II))

  • 강대민
    • 한국안전학회지
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    • 제9권4호
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    • pp.29-41
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    • 1994
  • High temperature tensiles tests, steady state creep tests, internal stress tests and creep rupture tests using Al 7075 alloy were performed over the temperature range of 9$0^{\circ}C$~50$0^{\circ}C$ and stress range of 0.64~17.2(kgf/$\textrm{mm}^2$) in order to investigate the creep behavior and predict creep rupture life From the apparent activation energy Qc and the applied stress exponent n measured, at the temperature range of 9$0^{\circ}C$~l2$0^{\circ}C$, the creep deformation seemed to be controlled by cross slip. On the other hand at the temperature of 20$0^{\circ}C$~23$0^{\circ}C$ the creep deformation seemed to be controlled by dislocation climb but at 47$0^{\circ}C$~50$0^{\circ}C$, by diffusion creep. And the rupture life(t$_{f}$) might be represented by anthermal process attributed to the difference of the applied stress dependence of Internal stress and the ratio of the Internal stress to the applied stress, the thermal activated process attributied to the temperature dependence of the internal stress. Also the ratio between stress dependence of primary creep rate and that of minimum creep rate was measured 0.46, the minimum creep rate is expected to be appromately obtained from master creep curve including the relationship primary creep rate and minumum creep rate. Finally the relationship new rupture parameter and logarithmic stress was represented with including the ratio between the dependence of primary creep rate and that of minimum creep rate, using the new rupture parameter the rupture life predition is exactly expected.d.

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Cathode Side Engineering to Raise Holding Voltage of SCR in a 0.5-㎛ 24 V CDMOS Process

  • Wang, Yang;Jin, Xiangliang;Zhou, Acheng;Yang, Liu
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제15권6호
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    • pp.601-607
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    • 2015
  • A set of novel silicon controlled rectifier (SCR) devices' characteristics have been analyzed and verified under the electrostatic discharge (ESD) stress. A ring-shaped diffusion was added to their anode or cathode in order to improve the holding voltage (Vh) of SCR structure by creating new current discharging path and decreasing the emitter injection efficiency (${\gamma}$) of parasitic Bipolar Junction Transistor (BJT). ESD current density distribution imitated by 2-dimensional (2D) TCAD simulation demonstrated that an additional current path exists in the proposed SCR. All the related devices were investigated and characterized based on transmission line pulse (TLP) test system in a standard $0.5-{\mu}m$ 24 V CDMOS process. The proposed SCR devices with ring-shaped anode (RASCR) and ring-shaped cathode (RCSCR) own higher Vh than that of Simple SCR (S_SCR). Especially, the Vh of RCSCR has been raised above 33 V. What's more, their holding current is kept over 800 mA, which makes it possible to design power clamp with SCR structure for on chip ESD protection and keep the protected chip away from latch-up risk.

유사차원해석 모델을 이용한 초희박 조건에서의 가솔린 직분사 엔진 연소 및 배기 예측 (Quasi-dimensional Analysis of Combustion and Emissions in a Stratified GDI Engine under Ultra-lean Conditions)

  • 이재서;허강열;권혁모;박재인
    • 한국자동차공학회논문집
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    • 제23권4호
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    • pp.402-409
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    • 2015
  • In this study a quasi-dimensional model is developed to predict the combustion process and emissions of a GDI engine under ultra-lean conditions. Combustion of a GDI engine condition is modeled as two simultaneous processes to consider significant fuel stratification. The first process is premixed flame propagation described as burning in a hemispherically propagating flame. The second is diffusion-controlled combustion modeled as mixing of multiple spray zones in the burned gas region. Mixing is an important factor in ultra-lean conditions leaving stratified mixture of developing sprays behind the propagating premixed flame. Sheet breakup and Hiroyasu models are applied to predict the velocity of a hollow cone spray. Validation is performed against measured pressures and NOx and CO emissions at different load and rpm conditions in the test engine.