• 대한기계학회:학술대회논문집
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• 대한기계학회 2001년도 추계학술대회논문집B
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• pp.185-190
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• 2001

Numerical Study with detailed chemistry has been conducted to investigate the flame structure and NOx formation characteristics in oxygen-enhanced$(CH_4/O_2-N_2)$ and oxygen-enhanced-EGR$(CH_4/O_2-CO_2)$ counter diffusion flame with various strain rates. A small amount of $N_2$ is included in oxygen-enhanced-EGR combustion, in order to consider the inevitable $N_2$ contamination by $O_2$ production process or air infiltration. The results are as follows : In $CH_4/O_2-CO_2$ flame it is very important to adopt a radiation effect precisely because the effect of radiation changes flame structure significantly. In $CH_4/O_2-N_2$ flame special strategy to minimize NO emission is needed because it is very sensitive to a small amount of $N_2$. Special attention is needed on CO emission by flame quenching, because of increased CO concentration. Spatial NO production rate of oxygen-enhanced combustion is different from that of air and oxygen-enhanced-EGR combustion in that thermal mechanism plays a role of destruction as well as production. In case $CH_4/O_2-CO_2$ flame contains more than 40% $CO_2$ it is possible to maintain the same EINO as that of $CH_4/Air$ flame with accomplishing higher temperature than that of $CH_4/Air$ flame. EINO decreases with increasing strain rate, and those effects are augmented in $CH_4/O_2$ flame. Complementary study is needed with extending the range of strain rate variation.

• 대한화학회지
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• 제35권4호
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• pp.374-378
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• 1991

pH 7.8의 인산 완충용액에서 Bilirubin의 전기화학적인 환원거동을 직류 폴라로그래피, 시차 펄스폴라로그래피, 순환 전압전류법 및 정전위 전기량법으로 조사하였다. 직류 폴라로그램에서 반파전위가 -1.32V와 -1.51V vs. Ag/AgCl인 2개의 환원파를 확인하였고, 각 환원파의 전류유형은 제1환원파는 확산지배적인 전류였으며 제2환원파는 반응성전류가 약간 포함된 확산전류였다. 그리고 각 환원단계는 모두 비가역적이었다. 또한 Bilirubin의 농도가 3.4 ${\times}$ 10$^{-4}$M 이하일 때 나타나는 전방파가 흡착에 의한 전류임을 확인하였다. 환원반응에 관여하는 전자수는 제1단계에서는 2개였으며, 제2단계에서는 1개였다.

• 한국분무공학회지
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• 제1권1호
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• pp.63-75
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• 1996

The purpose of this study is to investigate the break-up characteristics by taking advantage of a two-phase coaxial nozzle. Air and water are utilized as working fluids and the mass ratio air/water has been controlled to characterize the atomization, diffusion and development of mixing process. By way of a photographic technique, conventional developing structures and diffusion angles have been analyzed systematically with variations of mass ratios. The turbulent flow components of the atomized particles were measured by a two channel LDV system and the data were treated by an on-lined measurement equipment. According to the photographic results the spreading angles decreased because the axial inertia moment was relatively higher than the lateral one with respect to the increase of mass ratio. It is found the jet flow diffuses linearly in a certain limit region while the atomizing characteristics, in terms of the distributions of particle diameters did not show particular differences. It may be expected that these fundamental results can be used as reference data in studying the atomization, breakup and diffusions.

• E2M - 전기 전자와 첨단 소재
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• 제8권1호
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• pp.71-76
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• 1995

The thermal oxidation of Ge$_{0.2}$Si$_{0.8}$ in wet ambient has been investigated by Rutherford Backscattering Spectrometry(RBS). A uniform Ge$_{0.2}$Si$_{0.8}$O$_{2}$ oxide is formed at temperatures below 650.deg. C for polycrystalline and below 700.deg. C for single crystalline substrates. At higher temperatures Ge becomes depleted from the oxide and finally SiO$_{2}$ oxide is formed with Ge piled-ub behind it. The transition between the different oxide types depends also on the crystallinity of Ge$_{0.2}$Si$_{0.8}$. When a uniform Ge$_{0.2}$Si$_{0}$8/O$_{2}$ oxide grows, its thickness is proportional to the square root of the oxidation time, which suggests that the rate noting process is the diffusive transport of oxidant across the oxide. It is believed the oxidation is controlled by the competition between the diffusion of Ge or Si in Ge$_{0.2}$Si$_{0.8}$ and the movement of oxidation front.t.oxidation front.t.

• 한국환경과학회지
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• 제27권5호
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• pp.299-308
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• 2018

The adsorption characteristics of Cu ions were studied using the zeolite Na-A synthesized from Jeju volcanic rocks. The effects of various operating parameters such as initial concentration of Cu ions, contact time, solution pH, and solution temperature were investigated in batch experiments. The adsorption of Cu ions by Na-A zeolite was fitted well by pseudo-second-order kinetics and the Langmuir isotherm model. The maximum adsorption capacity determined using the Langmuir isotherm model was 152.95 mg/g. In addition, the adsorption of Cu ions by zeolite Na-A was primarily controlled by particle diffusion model in comparison with the film diffusion model. As the temperature increased from 303 K to 323 K, ${\Delta}G^o$ decreased from -2.22 kJ/mol to -3.41 kJ/mol, indicating that the adsorption of Cu ions by Na-A zeolite is spontaneous process.

• 한국결정성장학회지
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• 제5권2호
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• pp.122-128
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• 1995

알루미나 입자표면에 실리카 흡착층을 갖는 복합분말로 제조된 시편을 반응소결시켜 물라이트화 과정을 고찰하였다. 물라이트화 반응은 알루미나와 cristobalite의 계면에서 낮은 알루미나 함량을 갖는 비정질 aluminosilicated 상이 중간층을 형성하면서 시작되고 이 층을 통한 알루미나의 확산에 의하여 물라이트가 성장되었다. 물라이트는 알루미나의 입자의 표면을 따라 성장하였으며 확산에 의해 성장속도가 제어되었다

• 한국세라믹학회지
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• 제40권10호
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• pp.1015-1020
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• 2003

$\rho$-알루미나 결합 진동성형용 알루미나 캐스터블 내화물의 매트릭스부분과 용응 슬래그와의 침식거동을 젭센(Jabsen)이 주장한 이론을 기초로 하고 킹거리(Kingery)가 제안한 반응 기구를 통해 규명하였다. 매트릭스 부분의 초기침식이 분자확산거동에 의하여 지배되며, 아레니우스 관계식과 잘 일치하고 있어 온도의존성 활성화 과정으로 받아들 수 있다. 슬래그와 경계층의 Ca 농도차이가 23.2%로서 경계층을 형성하기 위한 물질이동의 구동력이 되었다. 매트릭스의 침식정도가 뮬라이트 소결체보다 심하지만 킹거리의 침식반응 기구와 잘 일치하고 있어 캐스터블의 수명예측이 가능하다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1625-1627
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• 2000

Cu(InGa)$Se_2$(CIGS) thin film absorbers with various Cu/(In+Ga) atomic ratios were prepared by a three-stage process using a co-evaporation appartus. The effect of Na on the structural and electrical properties of CIGS films were studied and their effects on the CIGS/Mo thin film solar cells were investigated. Soda-lime glass and Corning glass were used as substrates to compare the effect of Na diffusion into CIGS film. The resistivity of CIGS films was not changed in the Cu-poor lesion due to diffusion of Na from soda-lime glass but was mainly determined by the surface resistivity controlled by excess Na.

• 한국재료학회지
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• 제31권11호
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• pp.635-641
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• 2021

Cr thin films with O added are deposited on sapphire substrate by DC sputtering and are nitrided in NH₃ atmosphere between 300 and 900 ℃ for various times. X-ray diffraction results show that nitridation begins at 500 ℃, forming CrN and Cr₂N. Cr oxides of Cr₂O₃ are formed at 600 ℃. And, at temperatures higher than 900 ℃, the intermediate materials of Cr₂N and Cr₂O₃ disappear and CrN is dominant. The atomic concentration ratios of Cr and O are 77% and 23%, respectively, over the entire thickness of as-deposited Cr thin film. In the sample nitrided at 600 ℃, a CrN layer in which O is substituted with N is formed from the surface to 90 nm, and the concentrations of Cr and N in the layer are 60% and 40%, respectively. For this reason, CrN and Cr₂N are distributed in the CrN region, where O is substituted with N by nitridation, and Cr oxynitrides are formed in the region below this. The nitridation process is controlled by inter-diffusion of O and N and the parabolic growth law, with activation energy of 0.69 eV.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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• pp.475-480
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• 2002

The reliability of the solder joint is affected by type and extent of the interfacial reaction between solder and substrates. Therefore, understanding of intermetallic compounds produced by soldering in electronic packaging is essential. In-based alloys have been favored bonding devices that demand low soldering temperatures. For photonic and fiber optics packaging, m-based solders have become increasingly attractive as a soldering material candidate due to its ductility. In the present work, the interfacial reactions between indium solder and bare Cu Substrate are investigated. For the identification of intermetallic compounds, both Scanning Electron Microscopy(SEM) and X-Ray Diffraction(XRD) were employed. Experimental results showed that the intermetallic compounds, such as Cu$_{11}$In$_{9}$ was observed for bare Cu substrate. Additionally, the growth rate of these intermetallic compounds was increased with the reaction temperature and time. We found that the growth of the intermetallic compound follows the parabolic law, which indicates that the growth is diffusion-controlled.d.