• 제목/요약/키워드: Diffusion Process

검색결과 2,049건 처리시간 0.029초

비정질 및 단결정 실리콘에서 10~50 keV 에너지로 주입된 안티몬 이온의 분포와 열적인 거동에 따른 연구 (A Study on Implanted and Annealed Antimony Profiles in Amorphous and Single Crystalline Silicon Using 10~50 keV Energy Bombardment)

  • 정원채
    • 한국전기전자재료학회논문지
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    • 제28권11호
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    • pp.683-689
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    • 2015
  • For the formation of $N^+$ doping, the antimony ions are mainly used for the fabrication of a BJT (bipolar junction transistor), CMOS (complementary metal oxide semiconductor), FET (field effect transistor) and BiCMOS (bipolar and complementary metal oxide semiconductor) process integration. Antimony is a heavy element and has relatively a low diffusion coefficient in silicon. Therefore, antimony is preferred as a candidate of ultra shallow junction for n type doping instead of arsenic implantation. Three-dimensional (3D) profiles of antimony are also compared one another from different tilt angles and incident energies under same dimensional conditions. The diffusion effect of antimony showed ORD (oxygen retarded diffusion) after thermal oxidation process. The interfacial effect of a $SiO_2/Si$ is influenced antimony diffusion and showed segregation effects during the oxidation process. The surface sputtering effect of antimony must be considered due to its heavy mass in the case of low energy and high dose conditions. The range of antimony implanted in amorphous and crystalline silicon are compared each other and its data and profiles also showed and explained after thermal annealing under inert $N_2$ gas and dry oxidation.

Development of a Mass Transfer Model and Its Application to the Behavior of the Cs, Sr, Ba, and Oxygen ions in an Electrolytic Reduction Process for SF

  • 박병흥;강대승;서중석;박성원
    • 방사성폐기물학회지
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    • 제3권2호
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    • pp.85-93
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    • 2005
  • Isotopes of alkali and alkaline earth metals (AM and AEM) are the main contributors to the heat load and the radiotoxicity of spent fuel (SF) . These components are separated from the SF and dissolved in a molten LiCl in an electrolytic reduction process. A mass transfer model is developed to describe the diffusion behavior of Cs, Sr, and Ba in the SF into the molten salt. The model is an analytical solution of Fick's second law of diffusion for a cylinder which is the shape of a cathode in the electrolytic reduction process. And the model is also applied to depict the concentration profile of the oxygen ion which is produced by the electrolysis of Li$_{2}$O. The regressed diffusion coefficients of the model correlating the experimentally measured data are evaluated to be greater in the order of Ba, Cs, and Sr for the metal ions and the diffusion of the oxygen ion is slower than the metal ions which implies that different mechanisms govern the diffusion of the metal ions and the oxygen ions in a molten LiCl.

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염해 및 황산염의 복합작용에 따른 염소이온 확산특성의 실험적 연구 (Experimental Study of Chlorides Ion Diffusion Characteristics under Combined Condition of Chlorides and Sulfates)

  • 오병환;김선우;정상화;서정문
    • 한국콘크리트학회:학술대회논문집
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    • 한국콘크리트학회 2000년도 가을 학술발표회논문집(I)
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    • pp.413-418
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    • 2000
  • The test results on the deterioration process of concrete under single and combined action of chloride penetration have been obtained. Within the test period of 15 weeks, it is seen that the internally penetrated chloride ion contents are slightly less in the combined action of NaCI and $Na_2SO_4$ than the single action of NaCI. Also the theoretical prediction of chloride penetration based on measured diffusion coefficient agress well with the test data of single deterioration process but disagress with that of combined process. Therefore it should be needed that improved chloride diffusion model for the combined deterioration process.

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Ti-3Al-2.5V 튜브의 초소성 하이드로포밍과 확산접합으로 제조된 T형 구조물의 접합 특성 분석 (Analysis of Bonding Characteristics of a T-shape Structure Fabricated by Superplastic Hydroforming and Diffusion Bonding using two Ti-3Al-2.5V tubes)

  • 유영훈;이상용
    • 열처리공학회지
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    • 제31권2호
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    • pp.49-55
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    • 2018
  • A T-shape structure was manufactured by the superplastic forming and diffusion bonding process using two Ti-3Al-2.5V alloy tubes. A Ti-3Al-2.5V tube was prepared for the hydroforming in the superplastic condition until it reaches a surface area such as a roof welded in the hole of another Ti-3Al-2.5V tube. Afterward, the superplastic forming process and the diffusion bonding process were carried out simultaneously until the appropriate bonding along the interface area of two Ti-3Al-2.5V tubes was obtained. The bonding qualities were different at each location of the entire interface according to the applied process conditions such as strain, pressure, temperature, holding time, geometries, etc. The microstructures of bonding interface have been observed to understand the characteristics of the applied processes in this study.

사용자 친숙형 반도체 공정 시뮬레이터의 구성에 관한 연구 (A Study of Semiconductor Process Simulator with User Friendly Framework)

  • 이준하;이흥주
    • 한국산학기술학회논문지
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    • 제5권4호
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    • pp.331-335
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    • 2004
  • 본 논문에서는 반도체 공정 시뮬레이션을 위해 산화, 확산 및 이온 주입 공정을 모델링하고, 효율적인 실행과 상호 연관된 연속 공정의 시뮬레이션이 가능하도록 통합화된 환경을 구축하였다. 점성적 스트레스 모델을 이용한 산화 공정은 유속-압력 알고리즘과 경계요소법을 이용하여 안정된 해를 얻었으며, 선확산과 산화증배 현상이 포함된 확산 공정은 전진해법과 유한요소법을 이용하였다 또한 이온 주입 공정은 TRIM을 기본으로 다양한 공정 조건에 대한 모델이 추가된 몬테카를로 방법을 사용하였다. 편리한 사용자 입력 인터페이스와 그래픽적 출력을 제공하고, 윈도즈의 API함수를 이용하여 PC상에서 적은 메모리로도 빠른 결과를 얻을 수 있도록 하였으며, 객체 지향적인 모듈화로 타 시뮬레이터와의 호환성이 가능하도록 구성하였다.

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Arsenic implantation graph comparing with Dopant diffusion simulation and 1-D doping simulation (performed by synopsys sentaurus process)

  • 임주원;박준성
    • EDISON SW 활용 경진대회 논문집
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    • 제5회(2016년)
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    • pp.344-346
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    • 2016
  • 본 논문에서는 3-stream model에 기반한 Dopant diffusion simulator를 사용하여 실리콘 기판 내부의 As이온의 확산을 시뮬레이션한 결과와 Dual-Pearson Analytic model에 기반하여 Ion implantation을 1-D doping simulation한 결과를 토대로 여러 공정 설계에서 diffusion simulator의 사용가능함을 확인하였다.

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알루미나에서 방향족화합물의 분광광도법에 의한 역확산 해석 (Analysis of Counter-diffusion of Aromatic Compounds on Alumina by Spectrophotometry)

  • 고태석;정경환
    • 분석과학
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    • 제8권2호
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    • pp.205-213
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    • 1995
  • 알루미나에 흡착된 coronene이 tetra-phenylporpine에 의해 탈착되어 역확산되는 과정을 분광광도법을 이용하여 조사하였다. 액상에서 진행되는 흡착되는 물질과 탈착되는 물질의 역확산과정을, 교차하는 물질의 확산량이 같다는 가정 아래 Fritz 2 성분 흡착등온식을 적용한 역확산 모델로 모사하였다. Tetra-phenylporphine에 의해 탈착되는 과정에서 결정된 coronene 의 역확산계수는 ${\sim}10^{-15}m^2/sec$였으며, 흡착되는 과정에서 결정된 tetra-phenylporphine의 역확산계수는 ${\sim}10^{-11}m^2/sec$였다. 탈착되는 과정에서 결정된 coronenne의 역확산계수가 단일 성분의 흡착과정에서 결정된 확산계수에 비해 $10^5$배 정도로 적게 결정되는 이유는, 확산 교차에 의한 효과뿐 아니라 탈착과정에서 세공내 coronene의 농도 구배가 커진 데 기인하는 것으로 설명되었다.

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