• Title/Summary/Keyword: Diffused LED Light

Search Result 14, Processing Time 0.027 seconds

An Encoding Scheme Considering Diffused Lights In a Visual Light Communication System (가시광통신체계에서 난반사 조명을 고려한 인코딩 스킴)

  • Eun, Seongbae;Kim, Dong kyu;Cha, Shin
    • Journal of Korea Multimedia Society
    • /
    • v.22 no.2
    • /
    • pp.186-193
    • /
    • 2019
  • Visible light communication technology is being studied and developed in various ways due to advantages such as high transmission speed, excellent positioning and higher security. However, existing visible light communication systems have difficulties in entering the market because they use special transmitters and receivers. We will overcome the difficulty if we develope a VLC system that uses a conventional LED light as a transmitter and a smartphone camera as a receiver. What matters is that LED lights include a scatter filter to prevent glareness for human eyes, but the existing VLC(Visual Light Communication) method can not be applied. In this paper, we propose a method to encode data with On / Off patterns of LEDs in the lighting with $M{\times}N$ LEDs. We defined parameters like L-off-able and K-seperated to facilitate the recognition of On / Off patterns in the diffused Lights. We conducted experiments using an LED lighting and smart phones to determine the parameter values. Also, the maximum transmission rate of our encoding technique is mathematically presented. Our encoding scheme can be applied to indoor and outdoor positioning applications or settlement of commercial transactions.

A Study on Improvement of the Light Emitting Efficiency on Flip Chip LED with Patterned Sapphire Substrate by the Optical Simulation (광학 시뮬레이션을 이용한 Patterned Sapphire Substrate에 따른 Flip Chip LED의 광 추출 효율 변화에 대한 연구)

  • Park, Hyun Jung;Lee, Dong Kyu;Kwak, Joon Seop
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.28 no.10
    • /
    • pp.676-681
    • /
    • 2015
  • Recently many studies being carried out to increase the light efficiency of LED. The external quantum efficiency of LED, generally the light efficiency, is determined by the internal quantum efficiency and the light extraction efficiency. The internal quantum efficiency of LED was already reached to more than 90%, but the light extraction efficiency is still insufficient compared with the internal quantum efficiency because the total internal reflection is generated in the interface between the LED chip and air. Thus, we studied about flip chip LED with PSS and performed the optical simulation which find more optimized PSS for flip chip LED to increase the light extraction efficiency. Decreasing of the total internal reflection and effect of diffused reflection according to PSS improved the light extraction efficiency. To get more higher the efficiency, we simulated flip chip with PSS that the parameters are arrangement, edge spacing, radius, height and shape of PSS.

A Study on Efficient Control of Backlight LED for Reduction of Power Consumption of LCD TV (LCD TV의 소비 전력 절감을 위한 백라이트 LED의 효율적인 제어에 관한 연구)

  • Kang, Sung-Jin;Jung, Hye-Dong
    • Journal of The Institute of Information and Telecommunication Facilities Engineering
    • /
    • v.9 no.3
    • /
    • pp.80-85
    • /
    • 2010
  • In this paper, we present an algorithm for efficient control of backlight LED in order to reduce the power consumption of LCD TV. In addition, a pragmatic implementation method is presented. In conventional local dimming control, backlight LEDs of LCD TV are divided into $M{\times}N$ blocks. And, the proper luminance for each block is computed according to input image and used for dimming control. But, LED light of each block is diffused and affects the neighboring blocks, so that luminance of each block becomes larger than that of intent. In the proposed algorithm, dimming control values are reduced by the amount of quantity affected by the neighboring blocks using light spread function, resulting in additional reduction of power consumption.

  • PDF

Two-Dimensional Dimming Algorithm using Light Spread Function (빛 확산 함수를 이용한 이차원 디밍 알고리즘)

  • Jung, Hye-Dong;Kang, Sung-Jin
    • The Journal of Korean Institute of Communications and Information Sciences
    • /
    • v.35 no.8B
    • /
    • pp.1204-1210
    • /
    • 2010
  • In this paper, in order to reduce the power consumption of LCD TV, we present a two-dimensional dimming algorithm for LED BLU(Backlight Unit) using light spread function and a pragmatic implementation method. In conventional two dimensional dimming algorithms, LED BLU is divided into MxN blocks and proper backlight luminance for each block is computed according to input image and used for dimming control. But, LED light of each block is diffused and affects the neighboring blocks so that luminance of each block becomes larger than that of intent. In the proposed algorithm, dimming control values are reduced by the amount of quantity affected by the neighboring blocks using light spread function, resulting in additional reduction of power consumption.

Development of Dental Scanning Machine (치과용 Scanning 머신 개발)

  • 차영엽;동진근;오상천;이해형;송기창
    • Proceedings of the Korean Society of Precision Engineering Conference
    • /
    • 2002.10a
    • /
    • pp.562-565
    • /
    • 2002
  • Recent technologic innovations have created possibilities for restorative dentistry, such as computer-aided design and computer-aided manufacturing. This article presents a CAD process that has been developed for the fabrication of dental restorations. This process uses a 4-axes driving mechanism and an improved optical displacement sensor, successfully applied in other industries. In optical displacement sensor, the light beam emitted from the LED is converged through the light source lenses and thrown on the object to be detected. When the light beam is reflected from the object, however, it is diffused. The diffused light beam is converged again by the receiver lenses and cast on the optical position detector element as a small spot.

  • PDF

P-TYPE Zn Diffused by Ampoule-tube Method into $GaAs_{0.40}P_{0.60}$ and the Properties of Electroluminescence (기상 확산법에 의한 P-Type Zn 확산과 GaAs0.6P0.4의 전계발광 특성)

  • Kim, Da-Doo;So, Soo-Jin;Song, Min-Jong;Park, Choon-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2003.11a
    • /
    • pp.510-513
    • /
    • 2003
  • Our Zn diffusion into n-type $GaAs_{0.40}P_{0.60}$ used ampoule-tube method to increase IV. N-type epitaxial wafers were preferred by $H_2SO_4$-based pre-treatment. $SiO_2$ thin film was deposited by PECVD for some wafers. Diffusion times and diffusion temperatures respectability are 1, 2, 3 hr and 775, $805^{\circ}C$. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about $625{\sim}650\;nm$ and red color. The highest IV is about 270 mcd at the diffusion condition of $775^{\circ}C$, 3h for the wafers which didn't deposit $SiO_2$ thin films. Also, the longer diffusion time is the higher IV for the wafers which deposit $SiO_2$ thin films.

  • PDF

Desulfurization efficiency in photobioreactors dependent on the irradiation type of light sources (광생물반응기내 광조사 유형별 탈황 효율)

  • An, Jin Young;Kim, Byung Woo
    • Clean Technology
    • /
    • v.6 no.1
    • /
    • pp.71-78
    • /
    • 2000
  • Removal rates of hydrogen sulfide were investigated to known effects of several light sources with external and internal irradiation on the desulfurization using C. thiosulfatophilum. In the case of internal illumination system, optical-fiber photobioreactor was applied to increase the light availability. Furthermore, sunlight was used as the main light energy in the daytime and metal-halide lamp was applied as an additional light energy at night. Light energy of 99% was saved by the application of the LED's array in comparison with the incandescent light source. $H_2S$ removal rates at 5,000 lux in a 4-L photobioreactor were shown as 0.040, 0.138, 0.136, and 0.134 (${\mu}mol$ $H_2S/min$)/(mg protein/L), respectively, in the following order of light sources, when several light sources such as fluorescent, energy-saving, incandescent, halogen lamp, and filtered light at 460 nm were applied. Removal rate per unit cell concentration with the internal light diffused optical-fibers increased about 1 six times as much as that with the external light sources. Removal rate per unit cell concentration, using sunlight in the daytime and a metal-halide lamp at night, was 0.41 less than 0.869 (${\mu}mol$ $H_2S/min$)/(mg protein/L) using a 400 W metal-halide lamp day and night, since the automatic sunlight collection system can transmit the light intensity as only 10% of that with a metal-halide lamp.

  • PDF

Fabrication of Anti-Moiré Filter Using Multi-Array Needle Coating for LED Screens (다중 배열 니들 코팅을 이용한 LED 스크린용 Anti-Moiré 필터 제작)

  • Jeon, Kyungjun;Lee, Jinyoung;Park, Jongwoon
    • Journal of the Semiconductor & Display Technology
    • /
    • v.20 no.1
    • /
    • pp.77-82
    • /
    • 2021
  • Using a multi-array needle module developed for coating of high-density cylindrical microlens array (C-MLA), we have fabricated an anti-Moiré filter for LED screens. The Moiré phenomenon appears due to the interference between the array pattern of image sensors in a camera and the non-emission area (grid pattern) of a LED screen. To suppress it, we have employed poly(methyl methacrylate) (PMMA) and coated it on a glass substrate in the form of a grid and non-grid (parallel lines). We have rotated the needle module in order to increase the number of C-MLAs. With this scheme, we have fabricated the 150 mm × 150 mm anti-Moiré filters where 836 microlens lines are formed. They show the average width of 255.4 ㎛, the average distance between CMLs of 94.6 ㎛, and C-MLA width non-uniformity of 4.7%. We have shown that the Moiré patterns still appear in the presence of the parallel (non-grid)-type filter, whereas they disappeared completely by the grid-type filter. It is due to the fact that the Moiré patterns are diffused more effectively by the grid-type C-MLA.

Zn Diffusion using by Open-tube Method into n-type $GaAS_{0.60}P_{0.40}$ and the Properties of Electroluminescence (Open-tube 방식을 이용한 n-type $GaAS_{0.60}P_{0.40}$에 Zn 확산과 전계발광 특성)

  • Pyo, Jin-Goo;So, Soon-Jin;Park, Choon-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2003.08a
    • /
    • pp.63-66
    • /
    • 2003
  • To diffuse Zn at solid-state, the $SiO-2$/ZnO/$SiO_2$ wafers was made by PECVD and RF Sputter. Thicknesses of bottom $SiO_2$ and cap $SiO_2$ was about 500 ${\AA}$ and about 3500 ${\AA}$. Diffusion temperatures were $760^{\circ}C$, $780^{\circ}C$, and $800^{circ}C$, and diffusion times were 1, 2, 3, 4, 5, and 6 hr. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about 625~650 nm and red color. Main reason for Iv change was by diffusion temperature not diffusion time. The lower temperature was the higher Iv. We thick that these properties is because of the very high diffusion temperature.

  • PDF

Zn Diffusion using by Ampoule-tube Method into n-type $GaAs_{0.60}P_{0.40}$ and the Properties of Electroluminescence (Ampoule-tube 방식을 이용한 n-type $GaAs_{0.60}P_{0.40}$에 Zn 확산과 전계 발광 특성)

  • Kim, Da-Doo;So, Soo-Jin;Park, Choon-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2003.08a
    • /
    • pp.59-62
    • /
    • 2003
  • Our Zn diffusion into n-type $GaAs_{0.60}P_{0.40}$ used ampoule-tube method to increase IV. N-type epitaxial wafers were preferred by $H_2SO_4$-based pre-treatment. $SiO_2$ thin film was deposited by PECVD for some wafers. Diffusion times and diffusion temperatures respectability are 1, 2, 3 hr and 775, $805^{\circ}C$. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about 625~650 nm and red color. The highest IV is about 270 mcd at the diffusion condition of $775^{\circ}C$, 3h for the wafers which didn't deposit $SiO_2$ thin films. Also, the longer diffusion time is the higher IV for the wafers which deposit $SiO_2$ thin films.

  • PDF