• Title/Summary/Keyword: Diffraction order

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Fabrication & Characterization of Grating Structures for Long Wavelength DFB-LD Using Electron Beam Lithography (전자선 묘화를 이용한 장파장 DFB-LD용 격자 구조의 제작 및 특성 분석)

  • 송윤규;김성준;윤의준
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.1
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    • pp.200-205
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    • 1995
  • The 1st and 2nd-order grating structure for long wavelength DFB(Distributed FeedBack) laser diodes are successfully fabricated on InP substrates by using electron beam lithography and reactive ion etch techniques, and also characterized non-destructively by diffraction analysis without removal of photo-resis layer. A new composite layer made by lifted-off Cr layer on thin SiO2 film is developed and used as an etch mask, because PMMA, the e-beamresist, is unsuitable for reactive ion etch of InP. In addition, it is experimentally confiremed that diffraction analysis makes it possible to predict the grating parameters, and the analysis can be used as a non-destructive on-line test to prevent incomplete gratings from being successively processed.

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A study on multi degrees of freedom fine motion measurement for milli-structure (밀리구조물의 다자유도 미세 변위 측정법에 대한 연구)

  • 배의원;김종안;김수현;곽윤근
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2000.11a
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    • pp.39-42
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    • 2000
  • Cutrent technological development toward miniaturization requires smaller components. These components usually generate complex multi-DOF motions other than simple 1-DOF motlon. Therefore it is essential to develop measurement methodology for 6-DOF motions. In this paper, a new 6-DOF measurement system for milli-struchlre is presented. This methodology basically employs the Optical Beam Deflection Method (OBDM) with a diffraction grating. A laser beam is emitted toward the difliaction grating which could be attached on the surface of a milli-structue and the incident ray is dif'||'&'||'acted in several directions. Among these difliacted beams, $0^{th}$ and $\pm$ $1^{th}4" order difkicted rays are detected by 4 Quadrant Photodiodes. From coordinate values fram each detector, we can get information for 6-DOF motions with lineariration method, Required resolutions for milli-struchue measurement are suh-micrometer in translation and arcsec in rotation. Experimental results indicate that proposed system has possibility to satisfy this requirement.

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Development of Time Domain Numerical Computation for Predicting Noise Barrier Efficiency (방음벽 성능 예측을 위한 시간영역 수치해석의 개발)

  • 임창우;정철웅;이수갑
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2001.05a
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    • pp.757-761
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    • 2001
  • In order to study noise barriers of complex shapes and to assess their efficiency, precise prediction model is required. For instance, geometrical approaches cannot deal with complex diffraction effects. So that in this paper, the time domain numerical computation method(Computational Aeroacoustics method) is applied to estimate noise reduction by diffraction and finite impedance condition. The CAA method can be used to calculate exactly the pressure of complex barrier shape with different impedance condition, such as T-shape, cylindrical edge and multi-edge noise barriers.

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Electrical and Dielectric Properties of MgO Thin Films Prepared through Electron-Beam Deposition

  • You Yil-Hwan;Kim Jung-Seok;Hwang Jin-Ha
    • Journal of the Semiconductor & Display Technology
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    • v.5 no.1 s.14
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    • pp.51-55
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    • 2006
  • MgO thin films were prepared through electron-beam deposition onto ITO-coated glass substrates in order to measure electrical, dielectric, and microstructural properties. Design of experiments was performed in this study with the aim to understanding of the effects of processing variables, e.g., substrate temperature and filament current of an e-beam evaporator statistically. Leakage currents, relative dielectric constants, and diffraction intensities of MgO thin films were analyzed statistically, following the analysis procedure provided in the design of experiments. The leakage current level of MgO thin films has been found to be statistically significant at the level of $\alpha=0.1$.

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Correlation Between Deposition Parameters and Photoluminescence of ZnO Semiconducting Thin Films by Pulsed laser Deposition (PLD증착 변수에 따른 II-VI족 화합물 ZnO 반도체 박막의 발광 특성 연구)

  • 배상혁;윤일구;서대식;명재민;이상렬
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.3
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    • pp.246-250
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    • 2001
  • ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of355 nm. In order to investigate the emission properties of ZnO thin films, Pl measurements with an Ar ion laser a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited Pl bands centers around 390, 510 and 640 nm, labeled near ultra-violet(UV), green and orange bands. Structural properties of ZnO thin films are analyzed with X-ray diffraction(XRD).

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Polarization recording and reconstruction in the chalcogenide As-Ge-Se-S thin films (비정길 칼코게나이드 As-Ge-Se-S 박막에서 편광기록 재생)

  • 장선주;박종화;손철호;정홍배
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.9
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    • pp.781-785
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    • 2000
  • Chalcogenide glasses are suggested as a candidate for optical recording. In this study, we have investigated the holography recording and reconstruction of the polarization state in chalcogenide As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$ thin films. We have used a He-Ne laser light(633nm) to probe and record of the grating. Also the polarization state of object beam was modulated with a λ/4 wave plate. The polarization state of the +1st order diffracted beam was generated by readout of the grating with a linearly polarized reference beam. It was the same-handed polarization state as the polarization state of the recording beam. The result is shown that the diffraction efficiency of circularly polarized recording represents higher than other polarization state.ate.e.

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Absolute position measurement by lateral shearing interferometry of point-diffracted spherical waves (점회절 구면파의 전단 간섭계를 이용한 절대위치 측정)

  • Chu J.;Kim S.W.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2006.05a
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    • pp.25-26
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    • 2006
  • The method measuring the absolute position of a point diffraction source emitting a spherical wavefront in three-dimension is proposed. Two-dimensional interference of spherical wavefronts is used to overcome ambiguity of phase order. The spherical wavefront is explicated by Taylor series expansion, from which a radius of curvature of a spherical wavefront and its center position in three-dimension are obtainable. The spherical wavefront is reconstructed by a modified lateral shearing interferometer, which uses single-mode fiber as a point diffraction source.

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The Effects of Die Design and Die Series on the Surface Residual Stress of Cold Drawn Eutectoid Steel Wire (고탄소강 와이어의 냉간 인발시 다이 디자인과 다이 시리즈가 표면 잔류 응력에 미치는 영향)

  • Bae S. G.;Yang Y. S.;Ban D. Y.;Park C. G.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2005.10a
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    • pp.418-422
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    • 2005
  • In this study, the die design and die series on the surface residual stress of cold drawn eutectoid steel wire has been investigated. Test pieces were fabricated using die series with different mean and final reduction ratio. Surface residual stresses in the axial direction were measured by X-ray diffraction, Broker's 2-dimensional GADDS system. Results were compared with stress profiles which were calculated by 3D and 2D finite element simulation, Hibbitt's ABAQUS 6.4 program in Finite Element Analysis. By means of FEA method, optimal die shape considering delta-parameter were induced and applied in order to determine die sequence designs. Balance of the drawing stresses was also introduced to optimize die sequence.

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The Effects of Die Design and Die Series on the Surface Residual Stress of Cold Drawn Eutectoid Steel Wire (고탄소강 와이어의 냉간 인발 시 다이 디자인과 다이 시리즈가 표면 잔류 응력에 미치는 영향)

  • Bae, J.G.;Yang, Y.S.;Ban, D.Y.;Park, C.G.
    • Transactions of Materials Processing
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    • v.15 no.2 s.83
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    • pp.153-157
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    • 2006
  • In this study, the die design and die series on the surface residual stress of cold drawn eutectoid steel wire have been investigated. Test pieces were fabricated using die series with different mean and final reduction ratios. Surface residual stresses in the axial direction were measured by X-ray diffraction, Bruker's 2-dimensional GADDS system. The results were compared with stress profiles that were calculated by 3D and 2D finite element simulations, ABAQUS 6.4 program in finite element analysis(FEA). By means of the FEA method, optimal die shape considering delta-parameter were induced and applied in order to determine die sequence designs. Balance of the drawing stresses was also introduced to optimize die sequence.

Crystal Structures of Ba-ferrites Synthesize by Coprecipitation-Oxidation Method (공침-산화법으로 합성된 바륨페라이트의 결정구조)

  • 신형섭
    • Journal of the Korean Ceramic Society
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    • v.34 no.10
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    • pp.1045-1052
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    • 1997
  • Barium ferrites (BaFe12O19) were synthesized at the various temperature by the coprecipitation-oxidation method. X-ray diffraction Rietveld analysis for barium ferrites were performed, their microstructures were observed and their magnetic properties were measured, in order to analyze the crystal structures and determine the optimal temperature of heat-treatment. The barium ferrite, its average particle size 80 nm, was formed at 600℃ through the hematite (α-Fe2O3), but the site occupations of the Fe's in tetrahedral and bipyramidal sites and of the Ba relatively low. Increasing the heating temperature, these occupations and the magnetization increased, and the crystal c-axis decreased. These changes were very small at the heat treatment of above 800℃, but the particles were rapidly grown. It is suggested that the optimal temperature of heat-treatment is 800℃, at which temperature crystal structure is relatively stable and the particles hardly ever grow.

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