• Macromolecular Research
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• 제13권6호
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• pp.477-482
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• 2005

Photopolymers are attractive materials for holographic 3-D data storage because of their high photosensitivity and large refractive index modulation. We synthesized the six-armed dendrimer for fabricating the new photopolymer. It was prepared using the initiating mixture of hexaarylbiimidazole (HABI), mercapto-benzoxazole (MOBZ), and 2,6-bis(4-diethylaminobenzylidene)cyclopentanone (DEAW), which is sensitive to 514 nm wavelength. The holographic gratings were fabricated successfully in these photopolymer samples by conventional optical interference method. We investigated the effect of dendrimer, either as a binder or as a plasticizer in the cellulose acetate butyrate (CAB), on the diffraction behavior. The addition of only 1 wt$\%$ of dendrimer-I into the CAB significantly increased the diffraction efficiency. The sample doped with dendrimer showed around 80-83$\%$ of the diffraction efficiency.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.119-122
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• 2004

This paper discovers that we form holographic grating in AsGeSeS thin film. Holographic grating is not developed in the length of 10,20,40nm, while it is formed in the thin film of 80nm though it shows very low diffraction efficiency. On the contrary, holographic grating is established in every thin film of Ag(10nm)/AsGeSeS(10,20,40,80nm). Lattice in 10,20 nm thin film builds up, and immediately disappears. In the case of 40nm thin film, even if holographic grating is made up, it seems to have a low diffraction efficiency. Apart from 10,20,40nm, it shows the highest diffraction efficiency in the thin film of 80nm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.133-136
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• 2001

In this paper, we investigated the diffraction efficiency of polarization holography using by amorphous $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layer thin films by He-Ne laser. Multi-layer structures were formed by alternating a layer of meta1(Ag) and chalcogenide( $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ ). The holographic grating in these thin flims has been formed using a linealy polarized He-Ne laser light (633nm). The diffraction efficiency was investigated the two sample of $Ag/As_{40}Ge_{10}Se_{15}S_{35}-7$ layers and $Ag/As_{40}Ge_{10}Se_{15}S_{35}-15$ layers. As the results, we found that the diffraction efficiency of $Ag/As_{40}Ge_{10}Se_{15}S_{35}-7$ layers and $Ag/As_{40}Ge_{10}Se_{15}S_{35}-15$ layers were 1.7% and 2.5% respectively.

• 한국전기전자재료학회논문지
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• 제15권12호
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• pp.1070-1074
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• 2002

We have carried out two-beam interference experiments to form holographic gratings on As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ single layer, Ag/As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ multi-layer. In this study, holographic gratings have been formed using He-Ne laser(632.8nm) under different polarization combinations(intensity polarization holography, phase polarization holography). The diffraction efficiency was obtained by the +lst order intensity. The maximum diffraction efficiency of As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ single layer, As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ and MgF$_2$/As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ multi-layer were 0.8%, 1.4% and 3.1% under intensity polarization holography, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.445-446
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• 2008

In this paper, we investigated the diffraction grating efficiency on Ag-doped amorphous chalcogenide Ag/AsSeS thin film for used to volume hologram. The film thickness was 2 um and diffraction efficiency was obtained from He-Ne (632.8nm) and DPSS(532nm) (P:P) polarized laser beam on Ag/AsSeS thin films. As a result, for the films, the maximum grating diffraction efficiency using He-Ne laser(632nm) is 0.15%[2000sec]. And then The recording speed of DPSS laser was about 40s which of batter than He-Ne lasers.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.133-136
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• 2001

In this paper, we investigated the diffraction efficiency of polarization holography using by amorphous Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/ multi-layer thin films by He-Ne laser. Multi-layer structures were formed by alternating a layer of metal(Ag) and chalcogenide(As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/). The holographic grating in these thin films has been formed using a lineally polarized He-Ne laser light (633nm). The diffraction efficiency was investigated the two sample of Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-7 layers and Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-15 layers. As the results, we found that the diffraction efficiency of Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-7 layers and Ag/As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/-15 layers were 1.7% and 2.5% respectively

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.181-182
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• 2007

In this paper, we investigated the diffraction grating efficiency on $Ge_{75}Se_{25}$ and Ag-doped amorphous chalcogenide $Ag/Ge_{75}Se_{25}$ thin film for used to volume hologram. The film thickness was 2 um and diffraction efficiency was obtained from He-Ne (632.8nm) and DPSS(532nm) (P:P) polarized laser beam on $Ge_{75}Se_{25}$ and Ag/$Ge_{75}Se_{25}$ thin films. As a result. for the films, the diffraction efficiency on Ag/$Ge_{75}Se_{25}$ double layer, was better than single $Ge_{75}Se_{25}$ thin films. The recording speed of DPSS laser is higher than that of He-Ne laser.

• 한국광학회지
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• 제31권4호
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• pp.176-182
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• 2020

서브-미크론 주기의 미세한 회절 격자가 새겨진 도광판을 이용하여 빛을 수직으로 출사시켜 기존 방식에서 사용하는 집광용 프리즘 필름을 대체할 수 있는 가능성에 대하여 연구하였다. 시뮬레이션과 실험을 통해 최적 회절 격자 주기를 결정하였고, 입사되는 빛의 고도각과 방위각에 따라 회절 격자의 투과 모드 효율을 계산하였다. 또한, 회절에 의해 더 많은 빛을 추출할 수 있도록 도광판의 모양과 구성을 제안하여 고도각과 방향각을 최적화하는 두 가지 방식의 효과를 시뮬레이션으로 비교하였다. 광선 추적프로그램을 활용하여 회절 격자 각인 도광판의 휘도 각 분포를 계산하여 실제로 제작된 시제품의 위치별 휘도 각 분포와 비교하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.127-130
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• 2003

We have carried out two-beam interference experiment to form holographic grating on amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ single-laver, $MgF_{2}/As_{40}Ge_{10}Se_{15}S_{35}$ muliti-layer. In this study holographic grating formed using He-Ne laser(632.8nm) under different polarization state(intensity, phase polarization holography). The diffraction efficiency was obtained by first order intensity. The maximum diffraction efficiency of $As_{40}Ge_{10}Se_{15}S_{35}$ single-laver was 0.8% and The maximum diffraction efficiency of $MgF_{2}/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layer(multi-layer I, multi-layer II) were 1.4% and 3.1%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.1066-1069
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• 2004

This paper shows the characteristic of diffraction efficiency on film of amorphous AsGeSeS according to Ag doping. We compare amorhous AsGeSeS with the characteristics of AsGeSeS/Ag (10nm) and AsGeSeS/Ag (20m). We made film such as $\lambda$, $\lambda/2$, $\lambda/4$, $\lambda/8on$ the basis of 633nm, which is wavelength of recording laser(He-Ne). The highest diffraction efficiency on AsGeSeS film is $\lambda/4$, followed by $\lambda/2$, $\lambda$, $\lambda/8$. In the case of Ag 10nm, it is followed by $\lambda/4$, $\lambda/2$, $\lambda$, $\lambda/8$. On the occasion of Ag 20nm, it seems that the highest is $\lambda/2$, followed by $\lambda$, $\lambda/4$, $\lambda/8$. In other words, it appears that the highest point on AsGeSeS(158nm) single layer is 0.09%, the one of AsGeSeS(158nm)/Ag(10nm) is 1.6%, and the point of AsGeSeS(316nm)/Ag(20nm) is3.2%. Comparing the highest point in each case, we conclude that there is a distinctive increase in diffraction efficiency according the effect on Ag doping.