• Applied Microscopy
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• v.33 no.3
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• pp.187-193
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• 2003

When electron microscope images and selected area diffraction patterns of crystalline materials are being compared, it is important to know for the rotation of the diffraction pattern with respect to the image caused by the magnetic lens in the Electron Microscope. A well-known method to determine this rotation is to use a test crystal of $MoO_3$. But this method of determination of the rotation angle contains an uncertainty of $180^{\circ}$. Thus one has to devise another way to eliminate this uncertainty. In this paper we present a new and simple method of determining this rotation without any complexity. The method involves a process of obtaining LACBED patterns of crystalline materials. For the J2010 electron microscope, the rotation is determined to be $180^{\circ}$ and this angle remains unchanged for changing of the magnification and the camera length.

• Journal of electromagnetic engineering and science
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• v.18 no.1
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• pp.52-57
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• 2018

Surface dielectric barrier discharge (SDBD), which is widely used to control turbulence in aerodynamics, has a significant effect on the radar cross-section (RCS). A four-way linearly synthesized SDBD air plasma actuator is designed to bolster the plasma effects on electromagnetic waves. The diffraction angle is calculated to predict the RCS because of the periodic structure of staggered electrodes. The simplified plasma modeling is utilized to calculate the inhomogeneous surface plasma distribution. Monostatic RCS shows the diffraction in the plane perpendicular to the electrode array and the notable distortion by plasma. In comparison, the overall pattern is maintained in the parallel plane with minor plasma effects. The trends also appear in the bistatic RCS, which has a significant difference in the observation plane perpendicular to the electrodes. The peaks by Bragg's diffraction are shown, and the RCS is reduced by 10 dB in a certain range by the plasma effect. The diffraction caused by the actuator and the inhomogeneous air plasma should be considered in designing an SDBD actuator for a wide range of application.

• Journal of Information Display
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• v.3 no.3
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• pp.1-11
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• 2002

Multi-view function is important to three-dimensional displays without dedicated glasses. It is the reason that the observers earnestly desire to change their positions freely. Multi-viewing is also principal to the reality of three-dimensional (3D) image displayed on the screen. The display of projection type has the advantage that the number of viewing points can be easily increased according to the number of projectors. The authors research on multi-view projection display with hologram screen. Powerful directionality of the diffracted beam from hologram screen is required unlike two-dimensional (2D) display. We developed a new method that all diffracted beams satisfied the same Bragg condition and became sufficiently bright to observe the 3D image under usual indoor light. The principle is based on the essential Bragg diffraction in the three-dimensional space. Owing to such three-dimensional Bragg diffraction we achieved an excellent hologram screen that could be multiple reconstructed in spite of single recording. This hologram screen is able to answer arbitrary numbers of viewing points within wide viewing zone. The distortion of 3D image becomes also sufficiently small with the method of dividing the cross angle between illumination and diffraction beam.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.6
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• pp.63-71
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• 1998

In this paper, we experiment the characteristics of coupling coefficient, gain, diffraction efficiency and dependence of time determined by TWM(Two-Wave Mixing), using Fe-LiNbO$_3$ crystal(doped with 0.015Wt.%). From these results, we proposed to apply for optical memory application. The highest coupling angle of 14。 and maximum coupling coefficient of 6.9$cm^{-1}$ / are obtained at 514.5nm wavelength. Also, maximum diffraction efficiency is 54.13% when intensity ratio and writing beam incident angle are 0.1 and 14o, respectively. After fixing process, diffraction efficiency is 21.4%. As an example, we demonstrated the writing and reconstruct optical data using spatial light modualtor and angular multiplexing in most optimal condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.193-196
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• 2001

Single phase $CuInS_2$ thin film with the highest diffraction peak (112) at diffraction angle $(2\theta)$ of $27.7^{\circ}$ and the second highest diffraction peak (220) at diffraction angle $(2\theta)$ of $46.25^{\circ}$ was well made with chalcopyrite structure at substrate temperature of $70^{\circ}C$, annealing temperature of $250^{\circ}C$, annealing time of 60 min. The $CuInS_2$ thin film had the greatest grain size of $1.2{\mu}m$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that $CuInS_2$ thin film was 5.60 A and 11.12 A respectively. Single phase $CuInS_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type $CuInS_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of $CuInS_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type $CuInS_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, $3.0{\times}104cm^{-1}$ and 1.48 eV respectively. When Cu/In composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type $CuInS_2$ thin film was 821 nm, $6.0{\times}10^4cm^{-1}$ and 1.51 eV respectively.

• Transactions on Electrical and Electronic Materials
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• v.4 no.1
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• pp.7-10
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• 2003

Single phase CuInS$_2$ thin film with the strongest diffraction peak (112) at diffraction angle (2$\theta$) of 27.7$^{\circ}$ and the second strongest diffraction peak (220) at diffraction angle (2$\theta$) of 46.25$^{\circ}$was well made with chalcopyrite structure at substrate temperature of 70$^{\circ}C$. annealing temperature of 250$^{\circ}C$, annealing time of 60 min. The CuInS$_2$ thin film had the greatest grain size of 1.2 Um when the Cu/In composition ratio of 1.03, where the lattice constant of a and c were 5.60${\AA}$ and 11.12${\AA}$, respectively. The Cu/In stoichiometry of the single-phase CuInS$_2$thin films was from 0.84 to 1.3. The film was p-type when tile Cu/In ratio was above 0.99 and was n-type when the Cu/In was below 0.95. The fundamental absorption wavelength, absorption coefficient and optical band gap of p-type CuInS$_2$ thin film with Cu/In=1.3 were 837nm, 3.OH 104 cm-1 and 1.48 eV, respectively. The fundamental absorption wavelength absorption coefficient and optical energy band gap of n-type CuInS$_2$ thin film with Cu/In=0.84 were 821 nm, 6.0${\times}$10$^4$cm$\^$-1/ and 1.51 eV, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.193-196
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• 2001

Single phase CuInS$_2$ thin film with the highest diffraction peak (112) at diffraction angle (2$\theta$) of 27.7$^{\circ}$ and the second highest diffraction peak (220) at diffraction angle (2$\theta$) of 46.25$^{\circ}$ was well made with chalcopyrite structure at substrate temperature of 70 $^{\circ}C$, annealing temperature of 25$0^{\circ}C$, annealing time of 60 min. The CuInS$_2$ thin film had the greatest grain size of 1.2 ${\mu}{\textrm}{m}$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that CuInS$_2$ thin film was 5.60 $\AA$ and 11.12 $\AA$ respectively. Single phase CuInS$_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type CuInS$_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of CuInS$_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type CuInS$_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, 3.0x10 $^4$ $cm^{-1}$ / and 1.48 eV respectively. When CuAn composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type CuInS$_2$ thin film was 821 nm, 6.0x10$^4$ $cm^{-1}$ / and 1.51 eV respectively.

• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.281-282
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• 2008

The glancing angle deposition (GLAD) technique was used to fabricate $ZrO_2$ thin films by electron-beam evaporation. The crystal structure, cross-sectional structure, surface morphology and optical properties are characterized by X-ray diffraction meter (XRD, Rigaku, Cu $K{\alpha}$ - radiation), scanning electron microscope (SEM), and spectrophotometer, respectively.

• Journal of the Semiconductor & Display Technology
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• v.3 no.1
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• pp.27-30
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• 2004

In this work, the variation of the sidewall profile of a thick photoresist on the wavelength and proximity gap was investigated. PMER P-LA900PM, DNQ (DiazoNaphthoQuinone) novolac type photoresist, is used for experiments. The calculated results agreed well with the experimental results.

• Journal of the Korean Society for Nondestructive Testing
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• v.26 no.3
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• pp.198-205
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• 2006

The necessity of nondestructively inspecting austenitic steels, fiber-reinforced composites, and other inherently anisotropic materials has stimulated considerable interest in developing beam models for anisotropic media. The properties of slowness surface playa key role in the beam models based on the paraxial approximation. In this paper, we apply a modular multi-Gaussian beam (MMGB) model to study the effects of material anisotropy on ultrasonic beam profile. It is shown that the anisotropic effects of beam skew and excess beam divergence enter into the MMGB model through parameters defining the slope and curvature of the slowness surface. The overall beam profile is found when the quasilongitudinal(qL) beam propagates in the symmetry plane of transversely isotropic austenitic steels. Simulation results are presented to illustrate the effects of these parameters on ultrasonic beam diffraction and beam skew. The MMGB calculations are also checked by comparing the anisotropy factor and beam skew angle with other analytical solutions.