• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.764-768
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• 2016

To investigate excess $Na^+$ effect, $Bi_{0.5}(Na_{0.78+x}K_{0.22})_{0.5}TiO_3$ ($0{\leq}x{\leq}0.05$) (BNKT) ceramics were prepared by using a conventional solid-state reaction method. The structure and ferroelectric properties of BNKT ceramics were characterized by XRD (X-ray diffraction) and polarization dependence by external electric field. Also, the temperature dependence of dielectric constant and loss were studied. From these results, it was found that appropriate excess $Na^+$ into BNKT ceramics compensate the volatility and induce dense ceramics. The enhanced piezoelectric coefficient (158 pC/N) and depolarization temperature ($202^{\circ}C$) were obtained for the x=0.01 composition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.340-344
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• 2011

Thermoelectric bismuth telluride ($Bi_2Te_3$) films were deposited on $4^{\circ}$ off oriented (001) GaAs substrates using a modified metal organic chemical vapor deposition (MOCVD) system. The effects of substrate temperature on surface morphologies, crystallinity, electrical properties and thermoelctric properties were investigated. Two dimensional growth mode (2D) was observed at substrate temperature lower than $400^{\circ}C$. However, three dimensional growth mode (3D) was observed at substrate temperature higher than $400^{\circ}C$. Change of growth mechanism from 2D to 3D was confirmed with environmental scanning electron microscope (E-SEM) and X-ray diffraction analysis. Seebeck coefficients of all samples have negative values. This result indicates that $Bi_2Te_3$ films grown by modified MOCVD are n-type. The maximum value of Seebeck coefficient was -225 ${\mu}V/K$ and the power factor was $1.86{\times}10^{-3}\;W/mK^2$ at the substrate temperature of $400^{\circ}C$. $Bi_2Te_3$ films deposited using modified MOCVD can be used to fabricate high-performance thermoelectric devices.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.1
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• pp.25-36
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• 1995

We have investigated the structure and the conductivity of the $Cd_{1-y}Zn_{y}$ Te films evaporated on the glass substrates (Corning 7059) by Electron Beam Evaporator (EBE) in pressure of approximately $1 {\times} 10^{-6}$ torr.The structure temperatures were held at both room temperature and $300^{\circ}C$, and the samples have annealed for an hour at $300^{\circ}C$ The survace com-position of the as-prepared films were slightly different from those of CdZn Te source material.Cd losses on the CdZnTe surface was measured about 4% of atomic ratio at room temperature substrate, whereas Zn atomic ratio was nearly constant, relatively. The strure is observed to be polycrystalline whose phase is mainly cubic phase. Thermal expansion coefficient was $6.30 {\times} 10^{-5}/^{\circ}C$ which was calculated from the variation of lattice parameter by X-ray powder pat-terns measured at $400^{\circ}C$.Diffraction peaks were slightly increased by annealing for an hour at $300^{\circ}C $, but they werey highly affected by substrate temperature during evaporation.

• Membrane and Water Treatment
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• v.7 no.3
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• pp.223-240
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• 2016

In this study, poly(vinyl-alcohol) and water insoluble ${\beta}$-cyclodextrin polymer (${\beta}$-CDP) cross-linked with citric acid, have been used as macrocyclic carrier in the preparation of polymer inclusion membranes (PIMs) for aniline (as molecule model) extraction from aqueous media. The obtained membranes were firstly characterized by X-ray diffraction, Fourier transform infrared and water swelling test. The transport of aniline was studied in a two-compartment transport cell under various experimental conditions, such as carrier content in the membranes, stirring rate and initial aniline concentration. The kinetic study was performed and the kinetic parameters were calculated as rate constant (k), permeability coefficient (P) and flux (J). These first results demonstrated the utility of such polymeric membranes for environmental decontamination of toxic organic molecules like aniline. Predictive modeling of transport flux through these materials was then studied using design of experiments; the design chosen was a two level full factorial design $2^k$. An empirical correlation between aniline transport flux and independent variables (Poly ${\beta}$-CD membrane content, agitation speed and initial aniline concentration) was successfully obtained. Statistical analysis showed that initial aniline concentration of the solution was the most important parameter in the study domain. The model revealed the existence of a strong interaction between the Poly ${\beta}$-CD membrane content and the stirring speed of the source solution. The good agreement between the model and the experimental transport data confirms the model's validity.

• Advances in materials Research
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• v.5 no.2
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• pp.93-105
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• 2016

KNN-based ceramics modified with small amounts of $Bi_4Zr_3O_{12}$ (BiZ) has been synthesized using high-throughput experimentation (HTE). The results from X-ray diffraction show that for samples with base composition $(K_{0.5}Na_{0.5})NbO_3$ (KNN), the phase present changes from orthorhombic to pseudo-cubic with more than 0.2 mol% BiZ addition; for samples with base composition $(K_{0.48}Na_{0.48}Li_{0.04})(Nb_{0.9}Ta_{0.1})O_3$ (KNNLT), the phase present changes from a mixture of orthorhombic and tetragonal symmetry to pseudo-cubic with more than 0.4 mol % while for samples with base composition $(K_{0.48}Na_{0.48}Li_{0.04})(Nb_{0.86}Ta_{0.1}Sb_{0.04})O_3$ (KNNLST), the phase present is tetragonal with <0.3 mol% BiZ addition and transforms to pseudo-cubic with more dopant addition. The microstructures of the samples show that addition of BiZ decreases the average grain size and increases the volume of pores at the grain boundaries. The values of dielectric constant for KNN and KNNLT compositions increase slightly with BiZ addition while that for KNNLST decreases gradually with BiZ addition. The dielectric loss values are between 0.02 and 0.04 for KNNLT and KNNLST compositions while they are ~ 0.05 for KNN samples. The resistivity values increases with BiZ addition and values in the range of $10^{10}{\Omega}cm$ and $10^{12}{\Omega}cm$ are obtained. The piezoelectric charge coefficient ($d{^*}_{33}$) is highest for KNNLST samples and decreases gradually from ~400 pm/V to ~100 pm/V with BiZ addition.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.35-35
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• 2001

agnesium Oxide (MgO) with a NaCI structure is well known to exhibit high secondary electron emission, excellent high temperature chemical stability, high thermal conductance and electrical insulating properties. For these reason MgO films have been widely used for a buffer layer of high $T_c$ superconducting and a protective layer for AC-plasma display panels to improve discharge characteristics and panel lifetime. Up to now MgO films have been synthesized by lE-beam evaporation, Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapor Deposition (MOCVD), however there have been some limitations such as low film density and micro-cracks in films. Therefore magnetron sputtering process were emerged as predominant method to synthesis high density MgO films. In previous works, we designed and manufactured unbalanced magnetron source with high power density for the deposition of high quality MgO films. The magnetron discharges were sustained at the pressure of O.lmtorr with power density of $110W/\textrm{cm}^2$ and the maximum deposition rate was measured at $2.8\mu\textrm{m}/min$ for Cu films. In this study, the syntheses of MgO films were carried out by unbalanced magnetron sputtering with various $O_2$ partial pressure and specially target power densities, duty cycles and frequency using pulsed DC power supply. And also we investigated the plasma states with various $O_2$ partial pressure and pulsed DC conditions by Optical Emission Spectroscopy (OES). In order to confirm the relationships between plasma states and film properties such as microstructure and secondary electron emission coefficient were analyzed by X-Ray Diffraction(XRD), Transmission Electron Microscopy(TEM) and ${\gamma}-Focused$ Ion Beam (${\gamma}-FIB$).

• Economic and Environmental Geology
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• v.28 no.5
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• pp.455-467
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• 1995

In order to investigate the dispersion patterns and speciations of Cu, Pb, Zn and Cd in soils, stream sediments and stream waters, geochemical studies of soil, stream sediment and stream water samples collected in the vicinity of the Shi-Heung Cu-Pb-Zn mine was carried out Cation exchange capacity measurement, size analysis, X-ray diffraction analysis and batch test were performed to select applicable soil for adsorption treatment The average content of Cu, Pb, Zn and Cd in soils collected from tailings and ore dressing plant is 1084 ppm, 2292 ppm, 3512 ppm and 29.2 ppm, respectively, and therefore, tailings and ore dressing plant site may be the major contamination sources in this study area. The mean content of Cu, Pb, Zn and Cd in stream sediments is extremely high up to 794 ppm, 1633 ppm, 2946 ppm and 25.2 ppm, respectively. Tailing particles and heavy metal ions are dispersed along the tributary system. Results from the sequential extraction analysis indicate; (1) most of Cu is bound to organic matters and sulphides, (2) fraction of Pb is mainly bound to Fe and Mn oxides. Most of Zn is largely bound to Fe and Mn oxides and residual fraction. Ion exchangeable fraction of Cd is relatively higher than those of Cu, Pb and Zn. Batch test on soils collected from the kaolinite and/or pyrophyllite mines and from the control areas was carried out to select an applicable soil samples for adsorption treatment The sample, S10, collected from the control area 2 (clay content 33.2%) shows the highest $K_d$ (distribution coefficient). Organic content in soils and several clay minerals shows relatively good correlation with $K_d$. It means that applicable soils for adsorption treatment of heavy metals show high organic and clay content.

• Korean Journal of Materials Research
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• v.25 no.3
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• pp.138-143
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• 2015

Aluminum nitride, a compound semiconductor, has a Wurtzite structure; good material properties such as high thermal conductivity, great electric conductivity, high dielectric breakdown strength, a wide energy band gap (6.2eV), a fast elastic wave speed; and excellent in thermal and chemical stability. Furthermore, the thermal expansion coefficient of the aluminum nitride is similar to those of Si and GaAs. Due to these characteristics, aluminum nitride can be applied to electric packaging components, dielectric materials, SAW (surface acoustic wave) devices, and photoelectric devices. In this study, we surveyed the crystallization and preferred orientation of AlN thin films with an X-ray diffractometer. To fabricate the AlN thin film, we used the magnetron sputtering method with $N_2$, NH3 and Ar. According to an increase in the partial pressures of $N_2$ and $NH_3$, Al was nitrified and deposited onto a substrate in a molecular form. When AlN was fabricated with $N_2$, it showed a c-axis orientation and tended toward a high orientation with an increase in the temperature. On the other hand, when AlN was fabricated with $NH_3$, it showed a-axis orientation. This result is coincident with the proposed mechanism. We fabricated AlN thin films with an a-axis orientation by controlling the sputtering electric power, $NH_3$ pressure, deposition speed, and substrate temperature. According to the proposed mechanism, we also fabricated AlN thin films which demonstrated high a-axis and c-axis orientations.

• Journal of the Korean institute of surface engineering
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• v.51 no.4
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• pp.249-255
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• 2018

High temperature and low temperature gaseous nitriding was performed in order to study of the surface hardening and wear properties of the nitrided AISI 410 Martensitic stainless steels. High temperature gaseous nitiridng (HTGN) was carried out using partial pressure $N_2$ gas at $1,100^{\circ}C$ for 10 hour, and Low temperature gaseous nitiridng (LTGN) was conducted in a gas mixture of NH3 and N2 at $470^{\circ}C$ for 10 hour. The nitrided samples were characterized by microhardness measurements, optical microscopy and scanning electron microscopy. The phases were identified by X-ray diffraction and nitrogen concentration was analyzed by GD-OES. The HTGN specimen had a surface hardness of about $700HV_{0.1}$, $350{\mu}m$ of case depth. A ${\sim}50{\mu}m$ thick, $1,250HV_{0.1}$ hard nitrided case formed at the surface of the AISI 410 steel by LTGN, composed nitrogen supersaturated expanded martensite and ${\varepsilon}-Fe_{24}N_{10}$ iron nitrides. Additionally, the results of the wear tests, carried out LTGN specimen was low friction coefficient and high worn mass loss of ball. The increase in wear resistance can be mainly attributed to the increase in hardness and to the lattice distortion caused by higher nitrogen concentration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.659-662
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• 2004

The microwave dielectric properties of the $0.8Mg_4Ta_2O_9-0.2CaTiO_3$ ceramics with sintering temperature were investigated. All the sample of the $0.8Mg_4Ta_2O_9-0.2CaTiO_3$ ceramics prepared by conventional mixed oxide method and sintered at $1400^{\circ}C-1450^{\circ}C$. According to X-ray diffraction patterns of the $0.8Mg_4Ta_2O_9-0.2CaTiO_3$ ceramics, major phase of the hexagonal $Mg_4Ta_2O_9$ phase were showed. Porosity of the $0.8Mg_4Ta_2O_9-0.2CaTiO_3$ ceramics were reduced with increasing sintering temperature, but the bulk density was increased. In the case of $0.8Mg_4Ta_2O_9-0.2CaTiO_3$ ceramics sintered at $1425^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency(TCRF) were 13.69, 63,754GHz and -29.37 $ppm/^{\circ}C$, respectively.