• 한국ITS학회 논문지
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• 제17권5호
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• pp.128-134
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• 2018

본 논문에서는 GPS용 마이크로스트립 패치안테나의 대역특성을 넓히기 위하여 $90^{\circ}$ 하이브리드를 적용한 2포트 급전을 제안한다. 패치는 정사각형 패치이며, 급전은 프로브 급전한다. $90^{\circ}$하이브리드 칩 소자 회로를 설계하고, $90^{\circ}$위상차가 나는 출력 포트를 패치안테나에 각각 공급한다. 설계된 패치와 $90^{\circ}$하이브리드 회로를 FR4 기판에 구현하고 이들을 결합한다. 구현된 안테나에 대한 정재파비 측정결과, 2:1 기준으로 29% BW (1,230~1,700 MHz)을 얻었으며, 축비 밴드폭은 3dB 기준 15.87% BW (1,400~1,650 MHz)의 광대역 특성을 얻었다. 이득은 중심 주파수에서 2.75dBi으로 측정되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.358-361
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• 2002

Self-aligned MOSFETS using a polysilicon gate are widely fabricated in silicon technology. The polysilicon layer acts as a mask for the source and drain implants and does as gate electrode in the final product. However, the usage of polysilicon gate as a self-aligned mask is restricted in fabricating SiC MOSFETS since the following processes such as dopant activation, ohmic contacts are done at the very high temperature to attack the stability of the polysilicon layer. A metal instead of polysilicon can be used as a gate material and even can be used for ohmic contact to source region of SiC MOSFETS, which may reduce the number of the fabrication processes. Co-formation process of metal-source/drain ohmic contact and gate has been examined in the 4H-SiC based vertical power MOSFET At low bias region (<20V), increment of leakage current after RTA was detected. However, the amount of leakage current increment was less than a few tens of ph. The interface trap densities calculated from high-low frequency C-V curves do not show any difference between w/ RTA and w/o RTA. From the C-V characteristic curves, equivalent oxide thickness was calculated. The calculated thickness was 55 and 62nm for w/o RTA and w/ RTA, respectively. During the annealing, oxidation and silicidation of Ni can be occurred. Even though refractory nature of Ni, 950$^{\circ}C$ is high enough to oxidize it. Ni reacts with silicon and oxygen from SiO$_2$ 1ayer and form Ni-silicide and Ni-oxide, respectively. These extra layers result in the change of capacitance of whole oxide layer and the leakage current

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.425-425
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• 2008

Bismuth-antimony-telluride based thermoelectric thin film materials were prepared by metal organic vapor phase deposition using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_2Te_3$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $4{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_2Te_3$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_2Te_3$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the device was heated by heating block and the voltage output was measured. The highest estimated power of 1.3mW is obtained at the temperature difference of 45K. We provide a promising approach for fabricating thin film thermoelectric generators by using MOCVD grown thermoelectric materials which can employ nanostructures for high thermoelectric properties.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권2호
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• pp.131-135
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• 2005

The effect of different surface passivation films on blue or green (465-505 nm) InGaN/GaN multi-quantum well light-emitting diodes (LEDs) die were examined. $SiO_2$ or $SiN_x$ deposited by plasma enhanced chemical vapor deposition, or $Sc_2O_3$ or MgO deposited by rf plasma enhanced molecular beam epitaxy all show excellent passivation qualities. The forward current-voltage (I-V) characteristics were all independent of the passivation film used, even though the MBE-deposited films have lower interface state densities ($3-5{\times}10^{12}\;eV^{-1}\;cm^{-2}$) compared to the PECVD films (${\sim}10^{12}\;eV^{-1}\;cm^{-2}$), The reverse I-V characteristics showed more variation, hut there was no systematic difference for any of the passivation films, The results suggest that simple PECVD processes are effective for providing robust surface protection for InGaN/GaN LEDs.

• 대한기계학회논문집 C: 기술과 교육
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• 제3권3호
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• pp.175-181
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• 2015

전투차량의 내부는 혹서기에는 약 $80^{\circ}C$에 이를 만큼 고온 다습한 환경에 노출되어 감지거리를 측정하여 제어기에 신호를 전달하는 근접센서가 감지거리가 늘어나면서 결국에는 센서 자체의 금속물질을 인식하여 작동이 안되는 고장이 다발하여 원인분석 및 개선을 수행하게 되었다. 개선은 2차에 걸쳐 수행되었고 많은 시행착오를 거쳐 고온에 장기적으로 노출될 경우 고장이 발생된다는 것을 알아내어 개선방안을 도출한 결과, 이미터코일(Emitter Coil)을 한 개 더 추가하여 전압차이를 높여 감지 정확도를 향상시키고, 내부 몰딩 면적을 높여 진동 및 충격 내성을 강화하여 온도 및 습도 변화에 둔감하도록 설계개선을 하였다. 입증을 위해 고온 다습($85^{\circ}C$, 85%습도)한 환경챔버에서 136시간 내구시험을 실시하여 고장 발생이 없음을 확인하였다.

• 태양에너지
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• 제17권1호
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• pp.59-66
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• 1997

개방전압과 단락전류와 같은 태양전지 출력변수들은 접합깊이, 도핑농도, 금속접합 및 태양전지구조에 의한 변수들이다. 태양전지 설계의 중요한 요소로서 인이 도핑된 에미터와 금속사이의 금속접합은 일함수 차이가 작아 낮은 직렬저항을 가져야 한다. PESC 태양전지는 금속 접합장벽 전극으로 티타늄을 사용한다. 새로운 접합장벽 전극물질로 티타늄과 일함수가 비슷하지만 전기전도도가 우수한 크롬은 금속 접합장벽 전극으로 유망한 금속이다. 티타늄은 일함수 차가 작지만, 접합장벽으로 크롬은 태양전지 제조시 티타늄보다 우수한 전기적 특성들을 갖는다. 본 논문에서는 실리콘 태양전지의 접합장벽 금속전극의 특성을 비교 분석하였다.

• 에너지공학
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• 제25권4호
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• pp.133-140
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• 2016

제벡 및 펠티에 효과를 이용하는 열발전소자 또는 열전소자는 많은 산업 분야에서 활용되어지고 있다. 특히 군사용으로서 북극 및 남극에서 활동하는 잠수함에서부터 실생활에서 우리가 늘 접하는 냉온수기에 이르기까지 온도차를 이용하여 전력을 생산하거나 또는 전력을 투입하여 온도차를 발생시키는 장치의 효용성은 충분히 입증되었다고 할 수 있다. 자동차 분야에서 제벡효과를 이용한 열발전소자의 활용은 주로 고온의 배기가스를 이용하는데 집중되어 왔다. 본 연구에서는 자동차 내 엔진을 냉각 시킨 후 배출되는 고온의 냉각수를 활용하여 보조전력을 생산할 수 있는 가능성을 조사하였다. 그 결과 전력보조장치의 형태에 따라 전력생산량이 다르며 본 실험에서는 최대 약 1.5 V를 나타내었다.

• 대한방사선기술학회지:방사선기술과학
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• 제5권1호
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• pp.21-34
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• 1982

When unattenuated x-ray radiation passes through the object it is transmitted and scattered from objectes and impinging on the film. During this process certain radiation is absorbed within the object and others transmitted in reduced scattering. The scattering radiation influence upon radiation image quality, confining x-ray beam which means scattering radiation produce increased fog on x-ray film image and as a consequence decrease contrast and less detail of the film there for the elimination of fog and for absorbing scattered radiation, the grid has been used between the object and the film in order to rid of scattering rays. Using grid is good method for the qualification of the better image as well as in using air gap technique. The grid is easy to manipulate and promote good efficiency which is defined by ICRU and JIS. It is the purpose to study for eliminating scattered radiation from the tissue equivalent acryl phantom using grid, we have studied and evaluated the grid permeability about the x-ray exposure, the selection of grid ratio according to phantom thickness, on x-ray exposure are performed as follows. 1. The penetrating ratio of primary x-ray is remarkably decreased by increasing of the grid ratio, but it is almost not influenced in KVP difference and phantom thickness. 2. The scattered radiation is proportionaly increased by thickness of the phantom, having nothing to do with grid ratios. 3. The relative between the penetration rate of primary and secondary x-ray is improved by increasing grid ratio, and decreased by phantom thickness, and slightly decreased by high tube voltage. 4. The grid of 5:1 and 10:1 ratio are adequate to the phantom of 10cm and 15cm thickness, respectively.

• 대한치과기공학회지
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• 제27권1호
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• pp.79-88
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• 2005

This study was performed to investigate the surface properties of electrochemically oxidized pure niobium by anodic oxide and hydrothermal treatment technique. Niobium specimens of $10\times10mm$ in dimension were polished sequentially from #600, #800, #1000 emery paper. The surface pure niobium specimens were anodized in an electrolytic solution that was dissolved calcium and phosphate in water. The electrolytic voltage was set in the range of 250 V and the current density was 10 $mA/cm^2$. The specimen was hydrothermal treated in high-pressure steam at 300$^{\circ}C$ for 2 hours using an autoclave. Then, specimens were immersed in the Hanks' solution with pH 7.4 at 37$^{\circ}C$ for 30 days. The surface of specimen was characterized by scanning electron microscope(SEM), energy dispersive X-ray microanalysis(EDX), potentiostat/galvanostat test, and cytotoxicity test. The results obtained was summarized as follows; According to the result of measuring corrosion behavior at 0.9% NaCl, corrosion resistance was improved more specimens treated with anodic oxide than in hydrothermal treated ones. The multi-porous oxide layer on surface treated through anodic oxidation showed a structure that fine pores overlap one another, and the early precipitation of apatite was observed on the surface of hydrothermal treated samples. According to the result of EDX after 30 days deposition in Hanks' solution, Ca/P was 1.69 in hydrothermal treated specimens. In MTT test, specimens treated through anodic oxidation and hydrothermal treated ones showed spectrophotometer similar to that of the control group. Thus no significant difference in cytotoxicity was observed (P>0.05).

• 전자공학회논문지
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• 제53권5호
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• pp.77-86
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• 2016

본 논문에서는 full / half-rate의 이중 모드로 동작하는 기준 클록을 사용하지 않는 클록 데이터 복원 회로와 그 동작 알고리즘에 관하여 기술한다. 클록 데이터 복원 회로는 주파수 검출기, 위상 검출기, 차지 펌프 및 루프 필터, 그리고 전압 제어 발진기와 알고리즘 구현을 위한 디지털 블록으로 구성되어 있다. 주파수 검출기와 위상 검출기는 클록 데이터 복원 회로의 이중 모드 기능을 위하여 full / half-rate에서 동작하며 주파수 검출기는 이에 더해 일반 주파수 검출기의 불감대 영역에서도 데이터 전송률과 클록 주파수 차이를 판별할 수 있다. 제안한 이중 모드 클록 데이터 복원 회로를 시뮬레이션을 통해 검증한 결과 클록 데이터 복원에 전체 1.2-1.3 us의 동기화 시간이 소요되었으며, 0.5-UI 지터를 인가하였을 때 full-rate (2.7 Gb/s)와 half-rate (5.4 Gb/s) 모드에서 모두 안정적으로 클록 데이터를 복원한다.