• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.826-829
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• 2009

The authors report on the fabrication of p-type depletion mode inverter that composed of two pentacene based thin-film transistors (TFTs) on several dielectric surfaces. We use shift of threshold voltage depends on pentacene-thickness.

• International Journal of Highway Engineering
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• v.18 no.4
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• pp.55-61
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• 2016

PURPOSES : The objective of this study was to determine the relationship between the dielectric characteristics of asphalt mixtures and the air voids present in them using ground penetrating radar (GPR) testing. METHODS : To measure the dielectric properties of the asphalt mixtures, the reflection coefficient method and the approach based on the actual thickness of the asphalt layer were used. An air-couple-type GPR antenna with a center frequency of 1 GHz was used to measure the time for reflection from the asphalt/base layer interface. A piece of aluminum foil was placed at the interface to be able to determine the reflection time of the GPR signal with accuracy. An asphalt pavement testbed was constructed, and asphalt mixtures with different compaction numbers were tested. After the GPR tests, the asphalt samples were cored and their thicknesses and number of air voids were measured in the laboratory. RESULTS : It was found the dielectric constant of asphalt mixtures tends to decrease with an increase in the number of air voids. The dielectric constant values estimated from the reflection coefficient method exhibited a slight correlation to the number of air voids. However, the dielectric constant values measured using the approach based on the actual asphalt layer thickness were closely related to the asphalt mixture density. Based on these results, a regression equation to determine the number of air voids in asphalt mixtures using the GPR test method was proposed. CONCLUSIONS : It was concluded that the number of air voids in an asphalt mixture can be calculated based on the dielectric constant of the mixture as determined by GPR testing. It was also found that the number of air voids was exponentially related to the dielectric constant, with the coefficient of determination, $R^2$, being 0.74. These results suggest that the dielectric constant as determined by GPR testing can be used to improve the construction quality and maintenance of asphalt pavements.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.142-142
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• 2003

The effects of film thickness on the dipolar relaxation of ferroelectric PbTiO$_3$ films were investigated in the microwave-frequency range. The dielectric constants ($\varepsilon$) and the dielectric losses (tan $\delta$) were successfully measured up to 30 ㎓ using interdigital capacitors. The PbTiO$_3$ thin films were deposited on the quartz substrate at room temperature and postannealed in oxygen atmosphere. As the film thickness increased, its grain size and tetragonality were enhanced. And the dipolar relaxation behavior began to appear in the thin films with approximately 20 nm thickness, since ferroelectric domains could not be formed hi small grains. The observed relaxation frequency (above 10 ㎓) was higher than the previous values reported in bulk ceramics. It can be correlated with the extremely small domain size of the thinfilms as shown by TEM. And, the Rayleigh constant [1] from domain wall motions was alsoinvestigated by LCR meter at 100 KHz.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.241-245
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• 2012

The barrier rib on plasma display panel (PDP) is a typical 3D-patterned thick film with thickness of 120 ㎛ and it is hard to measure its dielectric constant in this state of the product. Because the porosity of ceramic thick film influenced the mechanical and dielectric characteristics, it was expected that there was the relationship between two properties. Therefore, the correlation analysis between porosity, hardness and dielectric constant of the barrier rib was studied and the exponential curve between porosity and hardness, and the quadratic curve between porosity and dielectric constant were drawn. The dielectric constant was well related to hardness by K400kHz = 0.5672 + 5.695 ln(Hv). The hardness was measured at five points on two real panels which sintered by two types of profiles and then dielectric constants and deviation were estimated by the above equation.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.11
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• pp.1183-1189
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• 2014

The accuracy of the resistive-sheet technique in calculating the RCS(Radar Cross Section) of a deciduous leaf is examined in this paper for various thicknesses and dielectric constants, and a range of thicknesses for the resistive sheet technique is proposed. At first, a leaf was assumed to be a lossy dielectric disk, and the dielectric disk was again assumed to be a resistive sheet with an appropriate resistivity for a given thickness, a dielectric constant, and a frequency. Then, the RCS of the leaf was computed using the physical optics(PO) method, and was compared with the calculation results of a numerical analysis: i.e., a commercial tool based on the FEM (Finite Element Method) technique. It was shown that the error increases as the thickness increases. The error was 0.1 dB, for example, when the thickness is 1.2 mm and 3.7 dB when the thickness is 3 mm with a dielectric constant of(21.4, 9.7) at 9.6 GHz. It was also found that the error decreases as the dielectric constant increases. This study will be very useful for calculating the scattering characteristics of numerous leaves in a vegetation canopy for estimating its radar backscatter using scattering model.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.40-40
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• 2008

$InGaZnO_4$ based thin film transistors (TFTs) are of interest for large area and low cost electronics. The TFTs have strong potential for application in flat panel displays and portable electronics due to their high field effect mobility, high on/off current ratios, and high optical transparency. The application of such room temperature processed transistors, however, is often limited by the operation voltage and long-tenn stability. Therefore, attaining an optimum thickness is necessary. We investigated the thickness dependence of a room temperature grown $MgO_{0.3}BST_{0.7}$ composite gate dielectric and an $InGaZnO_4$ (IGZO) active semiconductor on the electrical characteristics of thin film transistors fabricated on a polyethylene terephthalate (PET) substrate. The TFT characteristics were changed markedly with variation of the gate dielectric and semiconductor thickness. The optimum gate dielectric and active semiconductor thickness were 300 nm and 30 nm, respectively. The TFT showed low operating voltage of less than 4 V, field effect mobility of 21.34 cm2/$V{\cdot}s$, an on/off ratio of $8.27\times10^6$, threshold voltage of 2.2 V, and a subthreshold swing of 0.42 V/dec.

• Korean Journal of Materials Research
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• v.13 no.4
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• pp.259-265
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• 2003

For the aim of thin microwave absorbers used in mobile telecommunication frequency band, this study proposed a high permittivity dielectrics(λ/4 spacer) coated with ITO thin films of 377 $\Omega$/sq(impedance transformer). High frequency dielectric properties of ferroelectric ceramics, electrical properties of ITO thin films and microwave absorbing properties of ITO/dielectrics were investigated. Ferroelectric materials including $BaTiO_3$(BT), 0.9Pb($Mg_{1}$3/Nb$_{2}$3/)$O_3$-0.1 $PbTiO_3$(PMN-PT), 0.8 Pb (Mg$_{1}$3/$Nb_{2}$3/)$O_3$-0.2 Pb($Zn_{1}$3$_Nb{2}$3/)$O_3$(PMN-PZN) were prepared by ceramic processing for high permittivity dielectrics,. The ferroelectric materials show high dielectric constant and dielectric loss in the microwave frequency range. The microwave absorbance (at 2 ㎓) of BT, 0.9PMN-0.1PT, and 0.8PMN-0.2PZN were found to be 60%(at a thickness of 3.5 mm), 20% (2.5 mm), and 30% (2.5 mm), respectively. By coating the ITO thin films on the ferroelectric substrates with λ/4 thickness, the microwave absorbance is greatly improved. Particularly, when the surface resistance of ITO films is closed of 377 $\Omega$/sq, the reflection loss is reduced to -20 ㏈(99% absorbance). This is attributed to the wave impedance matching controlled by ITO thin films at a given thickness of high permittivity dielectrics of λ/4 (3.5 mm for BT, 2.5 mm for PMN-PT and PMN-PZN at 2 ㎓). It is, therefore, successfully proposed that the ITO/ferroelectric materials with controlled surface resistance and high dielectric constant can be useful as a thin microwave absorbers in mobile telecommunication frequency band.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.379-381
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• 1997

The dielectric layers in AC plasma display panel(AC PDP) are essential to the discharge cell structure, because they protect metal electrodes from sputtering by positive ion and from a sheath of wall charges which are essential to memory function of AC PDP. Furthermore, this layer should be transparent because the visible light must pass through the layer. In this paper, the dielectric breakdown strength and transparency of the dielectric layer on the discharge electrodes are studied. The variables in this test are the dielectric layer thickness, dielectric firing condition, gas pressure, species of gas and so on.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1519-1521
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• 2007

In this work, a coplanar-type plasma flat fluorescent lamp having cross type of electrode was fabricated by screen printing and sealing technique. Cross type of electrode with a dielectric layer were screen-printed on a rear glass plate, and then fired at $550^{\circ}C$. Phosphor was printed on and fired at $450^{\circ}C$. Finally, the lamp was sealed by frit glass at $450^{\circ}C$. The lamp of cross electrode type was studied depending on the electrode gap and the thickness of dielectric layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.247-250
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• 2001

Organic semiconductors based on vacuum-deposited films of fused-ring polycyclic aromatic hydrocarbon have great potential to be utilized as an active layer for electronic and optoelectronic devices. We have fabricated organic thin film transistors(OTFTs) and discuss electrical characteristics of the devices. For the gate dielectric layer, OPTMER PC403 photoacryl(JSR Co.) was spin-coated and cured at 220$^{\circ}C$. Electrical characteristics of the device were investigated, where the photoacryl dielectric layer thickness and pentacene active layer thickness were about 0.6$\mu\textrm{m}$ and 800${\AA}$.