• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.222-222
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• 2007

RF circuit을 구현하는데 있어서 기판의 전기적 특성을 정확하게 아는 것은 원하는 결과를 추출하기 위해 매우 중요하다. 본 연구에서는 현재 사용되고 있는 PI 기판의 전기적인 특성인 유효 유전율과 loss tangent 값을 T-resonator률 이용해 정확하게 측정하고자 했다. T-resonator는 microstrip 구조로 구현 되었으며 conductor material은 Cu를 사용하였다. PI 기판의 두께는 25um, Cu의 두께는 PI 기판의 종류에 따라 12um 와 18um, T-resonator line width는 50um로 구현하였다. 또한 공진 주파수에 따라 stub 길이가 다른 10개의 T-resonator를 제작하였다. PI 기판의 유효 유전율을 구하기 위해 stub 길이의 open-end effect와 T-junction effect를 고려하였으며 수식을 통해 정확한 유효 유전률을 추출하였다. 또한 PI 기판의 loss tangent 추출에 필요한 dielectric loss를 추출하기 위해 unload quality factor를 분석하였다. Unload quality factor는 dielectric loss, conductor loss, radiation loss를 구성되며 conductor loss와 radiation loss를 수식에 의해 구하고 dielectric loss를 추출 하였다. 추출 된 dielectric loss를 통해 각각의 T-resonator의 loss tangent 값을 구하였다. T-resonator를 이용한 PI 기판의 측정은 비교적 복잡한 수식에 의해 이루어지지만 정확한 data를 얻을 수 있고 다른 재료의 전기적 특성을 추출하는데 응용이 가능하다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.11
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• pp.49-56
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• 1992

In this paper a band-pass filter using dielectric resonators with tuning screw and spacer at Ku-band is designed and constructed. For the filter design and construction, the coupling coefficient K between two resonators is numberically evaluated. The external quality factor Q$_{ex}$ is also calculated with a microstrip line which is necessary for the field excitation of dielectric resonator. The coupling between dielectric resonator and microstrip line depends mainly upon the magnetic field and is principal parameter in band-pass filter. The Q$_{ex}$ and K data which are evaluated by numberical analysis are practically applied to the filter construction. The theoretical Band-pass filter responses are given by Chebyshev approximation and they are nearly similar to the experimental results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.174-177
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• 2009

In this paper, an oscillator using dielectric-rod loaded cavity resonators with HTS(High Temperature Superconductor) end-plates was presented. It was operated at X-band. A two port cavity resonator was incorporated into a basic feedback loop oscillator configuration. A rutile loaded cavity resonator with HTS thin film end-plates was used to provide the quality factor between $10^4$ and $10^6$. A parallel feedback oscillator was constructed with a dielectric loaded cavity resonator, an amplifier, and a directional coupler. At 300 K, the experimental results showed the phase noise of -108 dBc/Hz at a 100 kHz offset frequency. At 26 K, the results was -118.8 dBc/Hz at same offset frequency.

• Proceedings of the IEEK Conference
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• 2000.11a
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• pp.385-388
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• 2000

In this paper, the Ka-band Dielectric resonator oscillator has been designed and fabricated. The resonator network was simulated using HFSS program. The design method of an oscillator is the small-signal S-parameter design. The Push-push DRO employs a hetero junction FET (NE32484A). The fabricated Push-push DRO shows such characteristics as the phase noise -106 ㏈c/Hz at the 100 ㎑ frequency offset. the output power and fundamental frequency surpression were -6 ㏈m and -29 ㏈c, respectively.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.7-10
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• 2002

This paper presents a design of 24㎓ GaAs MESFET voltage controlled oscillator using a dielectric resonator(DR) and a frequency doubler. DR modeling has been done to get the effects of resonator size and the gap from transmission line by HFSS at 12㎓, and frequency doubler is used to get 24㎓ Output.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12
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• pp.1087-1090
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• 2003

The circular cavity resonator which can measure the dielectric properties of dielectrics in the V -band(50㎓∼75㎓) frequency range was designed and fabricated. Exciting and detecting of the resonator is performed by WR15 rectangular waveguides using Bethe's small hole coupling. GaAs and PTFE plate samples were used for the verification of the performance of the fabricated circular cavity resonator. In the measurement of GaAs and PTFE using that resonator, the permittivity were measured as I2.87 and 2.14, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.135-138
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• 2003

The circular cavity resonator which can measure the dielectric properties of dielectrics in the V-band($50GHz{\sim}75GHz$) frequency range was designed and fabricated. Exciting and detecting of the resonator is peformed by WR15 rectangular waveguides using Bethe's small hole coupling. The GaAs plate sample was used for the verification of the performance of the fabricated circular cavity resonator. In the measurement of GaAs single crystal using that resonator, the resonant frequency of the dominant $TE_{011}$ mode, the permittivity and $Q{\times}f_0$ were measured as 53.29GHz, 12.87 and 138,000, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.265-268
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• 2003

In RF application of resonator, cylinerical and transmission line(TRL) type are used generally, especially in ceramic modules the latter is used widely, TRL type resonators are used in VCO and RF filters etc.. TRL type resonators are divided stripline and microstripline and their characteristics depend on that of conductor and dielectric materials. In this study, the effect of material properties on the stripline resonator is measured and analyzed. Besides, the optimum design rule of resonator is presented.

• Journal of the Korean Institute of Telematics and Electronics
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• v.19 no.3
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• pp.13-18
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• 1982

This Paper is an experimental study on the effective dielectric constant of microstrip line. To quantify the dispersive effects on a microstrip line, the effective dielectric constant, which is the ratio of free space wavelength to guide wavelength, is calculated for teflon substrates. The calculation is based on the Fourier transform of the current distribution on microstrip line. Measurements of effective dielectric constant using a microstrip elliptic resonator and ring resonator are also described. As a result, the computed values of effective dielectric constant agree almost all with measured values, using ring and elliptic resonator, in case of w/h or the ratio of microstrip width to substrate thickness equal unity over frequency range of 8 to 12GHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.11
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• pp.2397-2402
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• 2010

Dielectric resonator bandpass filters with various time-delay at 800MHz were designed and fabricated in this paper. from the results of this study. first of all, good response. characteristics were measured for all cases. The insertion loss was below 2dB and flatness for ripple was below 0.2dB, whereas return loss was over 20dB, respectively. The measured delay time of the fabricated prototype were 6ns, 12ns and 200s, respectively and the flatness characteristics did not exceeding Ins for all cases. Furthermore, 2~4ns of flatness were measured for 2-hole dielectric block and other dielectric resonator filters with various delay time by combination of each prototypes filters were also implemented.