• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.408-413
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• 2016

The dielectric thin films applied to multi-colored semitransparent thin film solar cells have been extensively studied. In this work, we prepared GeSbTe and GeTe chalcogenide thin films using magnetron sputtering, and investigated their optical and phase-change properties to replace the dielectric films. The changes of surface morphology, sheet resistance, and X-ray diffraction of the Te-based chalcogenide films support the fact that the amorphous stability of GeTe films is superior to that of GeSbTe films. While both amorphous GeSbTe and GeTe films thinner than 30 nm have optical transparency between 5% and 60%, GeTe films transmit more visible light than GeSbTe films. It is confirmed by computer simulation that the color of semitransparent silicon thin film solar cells can be adjusted with the addition of GeSbTe or GeTe films. Since it is possible to adjust the contrast of the solar cells by exploiting the phase-change property, the two kinds of chalcogenide films are anticipated to be used as an optical layer in semitransparent solar cells.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1252-1253
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• 2008

The $V_{1.8}W_{0.2}O_5$ thin films deposited on $Pt/Ti/SiO_2/Si$ substrates by RF sputtering method with different $Ar/O_2$ ratio. The $V_{1.8}W_{0.2}O_5$ thin films were measured electrical and structural properties, fairly good Temperature coefficient of resistance(TCR). It was found that electrical and structural properties, TCR properties of thin films were strongly dependent upon the $Ar/O_2$ ratio. The dielectric constant of the $V_{1.8}W_{0.2}O_5$ thin films with 50/20 ratio were 93 with a dielectric loss of 0.535, respectively. Also, the TCR values of the $V_{1.8}W_{0.2}O_5$ thin films with 50/20 ratio were -3.15%/$^{\circ}C$.

• Electrical & Electronic Materials
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• v.7 no.1
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• pp.57-63
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• 1994

Aluminum oxide($Al_2{O_3}$) offers some unique advantages over the conventional silicon dioxide( $SiO_{2}$) gate insulator: greater resistance to ionic motion, better radiation hardness, possibility of obtaining low threshold voltage MOS FETs, and possibility of use as the gate insulator in nonvolatile memory devices. We have undertaken a study of the dielectric breakdown of $Al_2{O_3}$ on Si deposited by GAIVBE technique. In our experiments, we have varied the $Al_2{O_3}$ thickness from 300.angs. to 1400.angs. The resistivity of $Al_2{O_3}$ films varies from 108 ohm-cm for films less than 100.angs. to 10$_{13}$ ohm-cm for flims on the order of 1000.angs. The flat band shift is positive, indicating negative charging of oxide. The magnitude of the flat band shift is less for negative bias than for positive bias. The relative dielectric constant was 8.5-10.5 and the electric breakdown fields were 6-7 MV/cm(+bias) and 11-12 MV/cm (-bias).

• Transactions of the Korean Society of Mechanical Engineers
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• v.12 no.1
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• pp.152-162
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• 1988

In recent years, attention has been paid to the ceramic material next to metals and plastics due to its inherent characteristics, i.e., good hardness, resistance to heat and corrosion. Recently, various kinds of ceramic dielectrics have been developed for application in industry. It is of prime importance to know the thermophysical properties for wider use of these new materials. However, no extensive effort has been made for systematic measurement of the properties. In this paper, the dielectric constant of five different kinds of ceramic dielectrics ware measured. We call these samples as MgO.SiO$_{2}$, MgTiO$_{3}$, TiO$_{2}$, CaTiO$_{3}$, and BaTiO$_{3}$. Which are currently in commercial sue. The values of thermal dirrusivities, specific heats, and thermal conductivities of these ceramic dielectrics sere measured as a function of temperature ranging from room temperature to about 1300k.

• Journal of Electrical Engineering and Technology
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• v.8 no.4
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• pp.808-812
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• 2013

Multilayer capacitors with high ripple current and high capacitance were manufactured. The electrical properties of these capacitors were characterized for potential application for DC-link capacitors in hybrid electric vehicle inverters. Internal electrode structures were designed to achieve high capacitance and reliability. A single multilayer capacitor showed $0.46{\mu}F/cm^3$ of capacitance, 0.65% of dielectric loss, and 1450 V to 1650 V of dielectric breakdown voltage depending on the design of the internal electrode. The capacitor module designed with several multilayer capacitors gave a total capacitance of $450{\mu}F$, which is enough for hybrid electric vehicles. In particular, an equivalent series resistance of $4.5m{\Omega}$ or less will result in 60 $A_{rms}$, thereby reaching the allowed ripple current for hybrid electric vehicles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.395-395
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• 2007

We report on the fabrication of soluble pentacene-based thin-film transistors (TFTs) that consist of $NiO_x$, poly-vinyl phenol (PVP), and Ni for the source-drain (SID) electrodes, gate dielectric, and gate electrode, respectively. The $NiO_x$ SID electrodes of which the work function is well matched to that of soluble pentacene are deposited on a soluble pentacenechannel by sputter deposited of NiO powder and show a moderately low but still effective transmittance of ~65% in the visible range along with a good sheet resistance of ${\sim}40{\Omega}/{\square}$. The maximum saturation current of our soluble pentacene-based TFT is about $15{\mu}A$ at a gate bias of -40showing a high field effect mobility of $0.06cm^2/Vs$ in the dark, and the on/off current ratio of our TFT is about $10^4$. It is concluded that jointly adopting $NiO_x$ for the S/D electrodes and PVP for gate dielectric realizes a high-quality soluble pentacene-based TFT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.195-196
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• 2005

In recent years, as the needs of MOS's a high quality is desired to get the superior electrical characteristics and reliability on MOSFET. As an alternative gate dielectric have drawn considerable alternation due to their superior performance and reliability properties over MOSFET, 2'nd silicidation formation process has been proposed as a dielectric growth/annealing process. In this study the author observed process characteristics on MOS structure. In view points of the process characteristics of MOS capacitor, the oxygen & polysilicon was analyzed by SIMS analysis on l'st & 2'nd Ti process, the oxygen and Si2 contents[Count/sec] of 1.5e3 & 3.75e4 on l'st process and l.1e3 & 2.94e4 on 2'nd process, the Ti contents' of 8.2e18 & 6.5e18 on 1'st and 2'nd process. The sheet resistance[$\Omega/sq.$] was 4.5 & 4.0, the film stress[dyne/cm 2] of 1.09e10 & 1.075e10 on l'st and 2'nd process. I could achieved the superior MOS characteristics by 2'nd silicidation process.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.51-55
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• 2023

Measurement of the ferroelectric polarization hysteresis curve is an important means of overall evaluation and interpretation of the ferroelectric structure and dielectric properties. If a resistive component is included in the ferroelectric sample, an error is included in the measured value of the spontaneous polarization. When configuring the electrical circuit to measure the polarization, by properly utilizing the external resistance corresponding to the resistive component included in the sample, the error due to the resistive loss of the sample was excluded and the size of the ferroelectric polarization induced inside could be accurately measured. It is expected that the displacement and dielectric characteristics of ions inside the ferroelectric can be more accurately evaluated through the evaluation of such an accurate polarization hysteresis curve.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.14 no.1
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• pp.53-58
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• 2000

In this paper, the variable mechanical strength and dielectric breakdown strength of epoxy composites were measured at boiling absorption condition in order to observe the influences of moisture in out door use. Also, in order to improve water resistance of matrix resin, IPN(interpenetrating polymer network) method which had been already reported, was introduced and the influence was investigated. As Adding filter(SiO2) classified by o[phr], 50[phr] and 100[phr] to two kinds of matrix resin, six kinds of specimens were manufactured. As a result, it was confirmed that the moisture absorption rate was increased and mechanical strength and dielectric breakdown strength were degraded with boiling time and filler content increasing. On the other hand, it was confirmed that moisture absorption rates were decreased and the degrading rates of mechanical strength and dielectric breakdown strength were lowered according to improvement of adhesion strength in case of IPN specimens.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.21 no.10
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• pp.141-149
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• 2007

This paper introduce to improve the reliability of the expected service life and the insulation condition evaluation of the high voltage induction motors by assessing, comparing and analyzing the correlation between the dielectric properties of the off-line insulation diagnostic test and dielectric strength on the insulation breakdown test. The insulation diagnostic tests include insulation resistance, polarization index(P.I.), dissipation factor($tan{\delta}$), maximum partial discharges($Q_{max}$) and AC breakdown test. This study evaluated the correlation between insulation diagnostic test and AC breakdown test for stator winding of high voltage induction motor. On the basis of these test results, we expect that this study can be used for effectively assessing the results of insulation diagnostic tests for similar class induction motors in service at industrial field.