• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
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• pp.274-277
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• 1994

This paper describes a very fast rising high voltage pulse generation for studying surge phinomenon and prebreakdown of liquid dielectric by appling the traveling wave theory of the distributed circuit. This very fast rising high voltage pulse generator consists of a charging coaxial cable, a discharging switch, and a terminating resistance. As results, the rising time of pulses are about 31(nsec), which is very fast, and its duration is 950[nsec] when using 200[m] coaxial cable. The length of the coaxial cable and changing voltage can regulate the duration and the amplitude or the polarity of the pulse. When terminated the resistance, capacitor and inductor, the measured waveform corresponds with simulated waveform.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2005년도 High Temperature Superconductivity Vol.XV
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• pp.56-56
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• 2005

• 반도체디스플레이기술학회지
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• 제18권4호
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• pp.120-123
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• 2019

The effect of surface plasmon on ZTO thin films was investigated. The phenomenon of depletion occurring in the interface of the ZTO thin film created a potential barrier and the dielectric layer of the depletion formed a non-mass particle called plasmon. ZTO thin film represents n-type semiconductor features, and surface current by plasma has been able to obtain the effect of improving electrical efficiency as a result of high current at positive voltage and low current at negative voltage. It can be seen that the reduction of electric charge due to recombination of electronic hole pairs by heat treatment of compound semiconductors induces higher surface current in semiconductor devices.

• 마이크로전자및패키징학회지
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• 제23권4호
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• pp.87-92
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• 2016

전자소자의 방열모듈에서 두께 방향의 열방출 특성에 대한 중요성이 증가하고 있다. 금속과 금속의 본딩 및 유전체와 금속의 본딩 구조를 갖는 2가지 종류의 2층 층상재료를 제조한 후 두께 방향으로 열확산계수를 측정하였다. 금속(STS439)과 금속(Al6061)으로 이루어진 2층 층상재료에서는 섬광법(LFA)으로 열확산계수를 측정했을 때, 열흐름의 방향을 반대로 변화시켜도 열확산계수의 변화가 없었다. 그런데, 유전체(AlN-Polymer)와 금속(Al6061)의 2층 층상재료에서는 열흐름의 방향을 반대로 인가하였을 때 열확산계수는 17.5% 정도 다르게 나타났다. 유전체와 금속의 단면구조를 갖는 2층 층상재료에서, 금속에서 유전체 방향으로 측정한 열확산계수가 유전체에서 금속 방향으로 측정한 열확산계수에 비해 17.5% 작게 나타난 이유는, 금속내의 전자가 갖고 있던 에너지가 유전체 쪽으로 전달되기 위해서는 계면 주변에서 포논의 에너지 형태로 변환될 때 저항이 생기기 때문이다.

• Journal of the Korean Wood Science and Technology
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• 제42권3호
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• pp.339-345
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• 2014

집성재의 생산성 향상을 위한 고주파 가열 경화기술에 대해 연구하였다. 고주파가 유전체에 가해지면 내부에서 에너지 손실에 의한 발열이 발생한다. 집성재를 구성하는 라미나와 접착제는 유전체이므로 집성재에 고주파를 주사하면 내부에서 발열이 발생한다. 집성재 제조에 이용되는 대부분의 상온 경화형 접착제는 고온에서 빠른 경화가 이루어지므로 고주파 가열 기술을 이용하면 집성재 내부 접착층의 온도를 상승시킴으로써 빠른 경화를 유도할 수 있다. 본 연구에서는 낙엽송재와 phenol-resorcinol-formaldehyde (PRF) 접착제의 유전 특성을 평가하고, 집성재 내부의 접착층의 빠른 경화를 유도하는 고주파 가열 경화 기작을 이론적으로 분석하였다. 연구 결과, 온도상승인자인 PRF 접착제의 상대손실계수가 낙엽송재의 상대손실계수에 비해 높았으나, 온도상승저해인자인 밀도와 비열도 높았다. 그러나 상대손실계수의 비율이 온도상승저해인자의 비율보다 높기 때문에 고주파 가열에 의한 발열량은 접착제에서 더 높을 것으로 예상된다. 이러한 실험 결과를 이용한 이론적 접근을 바탕으로, 접착층이 목표온도까지 상승하기 위한 ISM 영역의 고주파 주파수 별 전기장의 상대 세기를 추정하였다.

• 한국초전도ㆍ저온공학회논문지
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• 제4권1호
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• pp.30-34
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• 2002

In this Paper, Insulation of current lead in the conduction-cooled DC reactor for the 1.2kV class 3 high-Tc superconducting fault current limiter(SFCL) is studied. Thermal link which conducts heat energy but insulates electrical energy is selected as a insulating device for the current lead in the conduction-cooled Superconducting DC reactor. It consists of oxide free copper(OFC) sheets, Polyimide films, glass fiberglass reinforced Plastics (GFRP) plates and interfacing material such an indium or thermal compound. Through the test of dielectric strength in L$N_2$, polyimide film thickness of 125 ${\mu}{\textrm}{m}$ is selected as a insulating material. Electrical insulation and heat conduction are contrary to each other. Because of low heat conductivity of insulator and contact area between electrical insulator and heat conductor, thermal resistance of conduction-cooled system is increased. For the reducing of thermal resistance and the reliable contact between Polyimide and OFC, thermal compound or indium can be used As thermal compound layer is weak layer in electrical field, indium is finally selected for the reducing of thermal resistance. Thermal link is successfully passed the test. The testing voltage was AC 2.5kVrms and the testing time was 1 hour.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 제6회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.5-8
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• 2004

We have investigated equivalent-circuit analysis of organic light-emitting diodes using frequency-dependent response of $ITO/Alq_3(60nm)/Al$ device at two different bias voltages. Complex impedance Z of the device was measured in the frequency range of 40Hz~1MHz. A Cole-Cole plot shows that there are two dielectric relaxations at the bias below turn-on voltage, and one relaxation at the bias above turn-on voltage. We are able to interpret the frequency-dependent response in terms of equivalent-circuit model of contact resistance $R_s$ in series with parallel combination of resistance $R_p$ and capacitance $C_p$. We have obtained contact resistance $R_s$ around $90{\Omega}$, mainly from the ITO anode.

• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2000년도 춘계학술발표대회 논문집
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• pp.131-134
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• 2000

Increased temperature adversely affects the reliability of a device. So, package material should have high thermal diffusion, i.e., high thermal conductivity. And, there are several other physical properties of polymeric materials that are important to microelectronics packaging, some of which are a low dielectric constant, a low coefficient of thermal expansion (CTE), and a high flexural strength. In this study, to get practical maximum packing fraction of AIN (granular type) filled EMC, the properties such as the spiral flow, thermal conductivity, CTE, and water resistance of AIN-filled EMC (65-vol%) were evaluated according to the size of AIN and the filler-size distribution. Also, physical properties of AIN filled EMC above 65-vol% were evaluated according to increasing AIN content at the point of maximum packing fraction (highly loading condition). The high loading conditions of EMC were set $D_L/D_S$=12 and $X_S$=0.25 like as filler of sphere shape and the AIN filled EMC in this conditions can be obtained satisfactory fluidity up to 70-vol%. As a result, the AIN filled EMC (70-vol%) at high loading condition showed improved thermal conductivity (about 6 W/m-K), dielectric constant (2.0~3.0), CTE(less than 14 ppm/$^{\circ}C$) and water resistance. So, the AIN filled EMC (70-vol%) at high loading condition meets the requirement fur advanced microelectronic packaging materials.

• Carbon letters
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• 제25권
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• pp.1-13
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• 2018

Gold functionalized graphene oxide (GOAu) nanoparticles were reinforced in acrylonitrile-butadiene rubbers (NBR) via solution and melt mixing methods. The synthesized NBR-GOAu nanocomposites have shown significant improvements in their rate of curing, mechanical strength, thermal stability and electrical properties. The homogeneous dispersion of GOAu nanoparticles in NBR has been considered responsible for the enhanced thermal conductivity, thermal stability, and mechanical properties of NBR nanocomposites. In addition, the NBR-GOAu nanocomposites were able to show a decreasing trend in their dielectric constant (${\varepsilon}^{\prime}$) and electrical resistance on straining within a range of 10-70%. The decreasing trend in ${\varepsilon}^{\prime}$ is attributed to the decrease in electrode and interfacial polarization on straining the nanocomposites. The decreasing trend in electrical resistance in the nanocomposites is likely due to the attachment of Au nanoparticles to the surface of GO sheets which act as electrical interconnects. The Au nanoparticles have been proposed to function as ball rollers in-between GO nanosheets to improve their sliding on each other and to improve contacts with neighboring GO nanosheets, especially on straining the nanocomposites. The NBR-GOAu nanocomposites have exhibited piezoelectric gauge factor (${GF_{\varepsilon}}^{\prime}$) of ~0.5, and piezo-resistive gauge factor ($GF_R$) of ~0.9 which clearly indicated that GOAu reinforced NBR nanocomposites are potentially useful in fabrication of structural, high temperature responsive, and stretchable strain-sensitive sensors.

• 전기학회논문지
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• 제66권4호
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• pp.659-665
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• 2017

Power semiconductor devices required the low on-resistance and high breakdown voltage. Wide band-gap materials opened a new technology of the power devices which promised a thin drift layer at an identical breakdown voltage. The diamond had the wide band-gap of 5.5 eV which induced the low power loss, high breakdown capability, low intrinsic carrier generation, and high operation temperature. We investigated the p-type pseudo-vertical diamond Schottky barrier diodes using a numerical simulation. The impact ionization rate was material to calculating the breakdown voltage. We revised the impact ionization rate of the diamond for adjusting the parallel-plane breakdown field at 10 MV/cm. Effects of the field plate on the breakdown voltage was also analyzed. A conventional diamond Schottky barrier diode without field plate exhibited the high forward current of 0.52 A/mm and low on-resistance of $1.71{\Omega}-mm$ at the forward voltage of 2 V. The simulated breakdown field of the conventional device was 13.3 MV/cm. The breakdown voltage of the conventional device and proposed devices with the $SiO_2$ passivation layer, anode field plate (AFP), and cathode field plate (CFP) was 680, 810, 810, and 1020 V, respectively. The AFP cannot alleviate the concentration of the electric field at the cathode edge. The CFP increased the breakdown voltage with evidences of the electric field and potential. However, we should consider the dielectric breakdown because the ideal breakdown field of the diamond is higher than that of the $SiO_2$, which is widely used as the passivation layer. The real breakdown voltage of the device with CFP decreased from 1020 to 565 V due to the dielectric breakdown.