• Journal of environmental and Sanitary engineering
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• v.15 no.1
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• pp.77-87
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• 2000

Several new ion exchange resins have been synthesized from chloromethyl styrene-l,4-divinylbenzine with 1%, 2%, 10% and 20%-crosslink and macrocyclic ligands of cryptand type by interpolymerization method. The adsorption characteristics and the pH, time, solvents and concentration dependence of the adsorption of metal ions by this resin were studied. The correlation between the separation characteristics of uranium and transition metal on the resins and the stability constants of complexes with macrocyclic ligands have been examined. The resins were very stable in both acidic and basic media and have good resistance to heat. The $UO_2^{2+}$ was not adsorbed on the resins below pH 3.0, but the power of adsorption of $UO_2^{2+}$ increased rapidly above pH 4.0. The optimum equilibrium time for adsorption of metallic ions was two hours and adsorptive power decreased in proportion to crosslink size of the resins and order of dielectric constants of solvents used and the selective sequence for metal cations was in the order of $UO_2^{2+}$, $Ni{2+}$ and $Nd{3+}$.

• Korean Journal of Materials Research
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• v.22 no.9
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• pp.454-458
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• 2012

Various adhesive materials are used in flip chip packaging for electrical interconnection and structural reinforcement. In cases of COF(chip on film) packages, low temperature bonding adhesive is currently needed for the utilization of low thermal resistance substrate films, such as PEN(polyethylene naphthalate) and PET(polyethylene terephthalate). In this study, the effects of anhydride and dihydrazide hardeners on the low-temperature snap cure behavior of epoxy based non-conductive pastes(NCPs) were investigated to reduce flip chip bonding temperature. Dynamic DSC(differential scanning calorimetry) and isothermal DEA(dielectric analysis) results showed that the curing rate of MHHPA(hexahydro-4-methylphthalic anhydride) at $160^{\circ}C$ was faster than that of ADH(adipic dihydrazide) when considering the onset and peak curing temperatures. In a die shear test performed after flip chip bonding, however, ADH-containing formulations indicated faster trends in reaching saturated bond strength values due to the post curing effect. More enhanced HAST(highly accelerated stress test) reliability could be achieved in an assembly having a higher initial bond strength and, thus, MHHPA is considered to be a more effective hardener than ADH for low temperature snap cure NCPs.

• Journal of the Korean Ceramic Society
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• v.48 no.4
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• pp.323-327
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• 2011

The effects of $Dy_2O_3$ and $Er_2O_3$ co-doping on electrical properties and temperature stability of barium titanate ($BaTiO_3$) ceramics were investigated in terms of microstructure and structural analysis. The dielectric constant and the insulation resistance (IR) of 0.7 mol% $Dy_2O_3$ and 0.3 mol% $Er_2O_3$ co-doped dielectrics had about 60% and 20% higher than the values of undoped one, respectively, and the temperature coefficient of capacitance (TCC) met the X7R specification. The addition of $Dy_2O_3$ contributed to electrical properties caused by increase of tetragonality; however, preferential diffusion of $Dy^{3+}$ ions toward A site in $BaTiO_3$ grain exhibited an adverse effect on temperature stability by grain growth. On the other hand, The $Er_2O_3$ addition in $BaTiO_3$ could affect the TCC behavior and the IR with suppression of grain growth caused by reinforcement of grain boundary and electrical compensation. Therefore, the enhanced electrical properties and temperature stability through the co-doping could be deduced from the increase of tetragonality and the suppression of grain growth.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.12
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• pp.762-767
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• 2017

Mullite ($3Al_2O_3{\cdot}2SiO_2$) has emerged as a promising candidate for high-temperature structural materials due to its erosion resistance, chemical and thermal stabilities, relatively low thermal expansion coefficient, excellent thermal shock and creep resistances, and low dielectric constant. However, since the pure mullite sintering temperature is as high as $1,600{\sim}1,700^{\circ}C$, there is an increasing need for a sintering additive capable of improving the strength characteristics while lowering the sintering temperature. Herein we have tried to obtain the optimal sintering additive composition by adding MgO, $Cr_2O_3$, and $Y_2O_3$ to mullite, followed by sintering at $1,325{\sim}1,550^{\circ}C$ for 2 h. With additives of 2 wt% of MgO, 2 wt% of $Cr_2O_3$, 4 wt% of $Y_2O_3$, A density of $3.23g/cm^3$ was obtained for the sintered body at $1,350^{\circ}C$ upon using 2 wt% MgO, 2 wt% $Cr_2O_3$, and 4 wt% $Y_2O_3$ as additives. The three-point flexural strength of that was 275 MPa and the coefficient of thermal expansion (CTE) was $4.15ppm/^{\circ}C$.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.36T no.4
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• pp.103-109
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• 1999

In this paper, we proposed to a new structure of T-shaped fed microstrip slot antenna using 2-layers dielectric material with a directional radiation characteristic. When the slot antenna of bi-directional radiation want to radiate only one direction, the reflector must be set up, but this antenna does'nt need set up reflector. T-shaped microstrip feed line is proposed for a better impedance matching to the microstrip slot antenna in a various range of slot widths. It was also found that the bandwidth of this antenna is proportional to the slot width. It was also found that the radiation resistance of this feed line structure is quite constant and low regardless to the slot width. We also analyzed this antenna by using the FDTD method, and calculating waves and electric field distribution in the time domain. we also are calculated return loss, VSWR, and radiation pattern in the frequency domain by Fourier transforming the time domain results, respectively. From the measured results, bandwidth was 34.8% in the center frequency. These results were in relatively good accordance with the calculated values.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.6
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• pp.270-275
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• 2019

Mica capacitor is being adopted for high voltage firing unit of guided weapon system because of its superior impact enduring property relative to ceramic capacitor. Reliability of localized mica high voltage capacitors was verified through environmental test like terminal strength test, humidity test, thermal shock test and accelerated life test for application to high voltage firing unit. Failure mode of mica capacitor is a decrease of insulation resistance and its final dielectric breakdown. Main constants of accelerated life model were derived experimentally and voltage constant and activation energy were 5.28 and 0.805 eV respectively. Lifetime of mica capacitor at normal use condition was calculated to be 38.5 years by acceleration factor, 496, and lifetime at accelerated condition and this long lifetime confirmed that mica high voltage capacitor could be applied for firing unit.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.178-178
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• 2010

With the scaling down of ULSI(Ultra Large Scale Integration) circuit of CMOS(Complementary Metal Oxide Semiconductor)based electronic devices, the electronic devices become more faster and smaller size that are promising field of semiconductor market. However, very narrow line width has some disadvantages. For example, because of narrow line width, deposition of conformal and thin barrier is difficult. Besides, proportion of barrier width is large, thus resistance is high. Conventional PVD(Physical Vapor Deposition) thin films are not able to gain a good quality and conformal layer. Hence, in order to get over these side effects, deposition of thin layer used of ALD(Atomic Layer Deposition) is important factor. Furthermore, it is essential that copper atomic diffusion into dielectric layer such as silicon oxide and hafnium oxide. If copper line is not surrounded by diffusion barrier, it cause the leakage current and devices degradation. There are some possible methods for improving the these secondary effects. In this study, TaNx, is used of Tertiarybutylimido tris (ethylamethlamino) tantalum (TBITEMAT), was deposited on the 24nm sized trench silicon oxide/silicon bi-layer substrate with good step coverage and high quality film using plasma enhanced atomic layer deposition (PEALD). And then copper was deposited on TaNx barrier using same deposition method. The thickness of TaNx was 4~5 nm. TaNx film was deposited the condition of under $300^{\circ}C$ and copper deposition temperature was under $120^{\circ}C$, and feeding time of TaNx and copper were 5 seconds and 5 seconds, relatively. Purge time of TaNx and copper films were 10 seconds and 6 seconds, relatively. XRD, TEM, AFM, I-V measurement(for testing leakage current and stability) were used to analyze this work. With this work, thin barrier layer(4~5nm) with deposited PEALD has good step coverage and good thermal stability. So the barrier properties of PEALD TaNx film are desirable for copper interconnection.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.373-373
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• 2014

Resistive-change random access memory (ReRAM) device is one of the promising candidates owing to its simple structure, high scalability potential and low power operation. Many resistive switching devices using transition metal oxides materials such as NiO, Al2O3, ZnO, HfO2, $TiO_2$, have attracting increased attention in recent years as the next-generation nonvolatile memory. Among various transition metal oxides materials, HfO2 has been adopted as the gate dielectric in advanced Si devices. For this reason, it is advantageous to develop an HfO2-based ReRAM devices to leverage its compatibility with Si. However, the annealing temperature of these high-k thin films for a suitable resistive memory switching is high, so there are several reports for low temperature process including microwave irradiation. In this paper, we demonstrate the bipolar resistive switching characteristics in the microwave irradiation annealing processed Ag/HfO2/Pt ReRAM device. Compared to the as-deposited Ag/HfO2/Pt device, highly improved uniformity of resistance values and operating voltage were obtained from the micro wave annealing processed HfO2 ReRAM device. In addition, a stable DC endurance (>100 cycles) and a high data retention (>104 sec) were achieved.

• Korean Journal of Optics and Photonics
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• v.19 no.1
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• pp.9-14
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• 2008

In this paper, a new type of Yagi-Uda antenna that operates in the terahertz frequencies is designed. The proposed Yagi-Uda antenna can obtain high input resistance of approximately $2000{\Omega}$ at the resonance frequency by using a full-wavelength dipole instead of a half-wavelength dipole as the driver element. The current leakage into the bias line was minimized by applying the photonic bandgap structure to the bias line. By designing the antenna on a thin substrate, the impedance lowering of an antenna caused by the relative dielectric constant of the substrate was prevented and the end-fire radiation pattern which is the original radiation characteristic of the Yagi-Uda antenna could be obtained. We expect that the proposed Yagi-Uda antenna can achieve increased terahertz output power by improving the impedance mismatching problem with the photomixer.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.4
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• pp.389-396
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• 2015

A coil design of pulse induction metal detectors has been described. The search coil was demonstrated by using the wire with the diameter of 0.3 mm, 0.5 mm and 1.0 mm and the dielectric plate with the $30cm{\times}30cm$ and $35cm{\times}35cm$, the time constant and the currents of the coil as the variation of the coil size and the number of coil turns was characterized. The coil parameters like the resistance, the inductance and the time constants as the variation of the diameter of the wire, the coil size and the number of coil turns were compared and analysed through the calculation and the measurement. In addition, investigating the coil currents as the variation of the input pulse width, the coil design of pulse induction metal detectors has been discussed.