• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.274-277
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• 1994

This paper describes a very fast rising high voltage pulse generation for studying surge phinomenon and prebreakdown of liquid dielectric by appling the traveling wave theory of the distributed circuit. This very fast rising high voltage pulse generator consists of a charging coaxial cable, a discharging switch, and a terminating resistance. As results, the rising time of pulses are about 31(nsec), which is very fast, and its duration is 950[nsec] when using 200[m] coaxial cable. The length of the coaxial cable and changing voltage can regulate the duration and the amplitude or the polarity of the pulse. When terminated the resistance, capacitor and inductor, the measured waveform corresponds with simulated waveform.

• 한국초전도학회:학술대회논문집
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• v.15
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• pp.56-56
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• 2005

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.120-123
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• 2019

The effect of surface plasmon on ZTO thin films was investigated. The phenomenon of depletion occurring in the interface of the ZTO thin film created a potential barrier and the dielectric layer of the depletion formed a non-mass particle called plasmon. ZTO thin film represents n-type semiconductor features, and surface current by plasma has been able to obtain the effect of improving electrical efficiency as a result of high current at positive voltage and low current at negative voltage. It can be seen that the reduction of electric charge due to recombination of electronic hole pairs by heat treatment of compound semiconductors induces higher surface current in semiconductor devices.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.87-92
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• 2016

The importance of heat dissipation for the electric device modules along the thickness direction is increasing. Two types of two-layered materials, metal-metal bonding and dielectric-metal bonding, have been fabricated by roll bonding process and a thermal diffusivity of the specimens was measured along the thickness direction. The thermal diffusivity of specimens with metal-metal bonding measured by light flash analysis (LFA) showed a same value independent on the direction of heat flow. However, the thermal diffusivity of specimens with dielectric-metal bonding showed a big difference of 17.5% when the direction of heat flow changed oppositely in the LFA process. The measured thermal diffusivity of specimens when the heat flows from metal to dielectric direction showed smaller value of 17.5% compared to the value when the heat flow from dielectric to metal direction. The difference in thermal diffusivity of specimens with dielectric-metal bonding dependence on direction of heat flow is due to the electron-phonon resistance that occurred transfer process of electron energy to phonon energy near the interface.

• Journal of the Korean Wood Science and Technology
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• v.42 no.3
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• pp.339-345
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• 2014

For enhancing productivity of glulam, high frequency (HF) curing technique was researched in this study. Heat energy is generated by electromagnetic energy dissipation when HF wave is applied to a dielectric material. Because both lamina and adhesives have dielectric property, internal heat generation would be occurred when HF wave is applied to glulam. Most room temperature setting adhesives such as phenol-resorcinol-formaldehyde (PRF) resin, which is popularly used for manufacturing glulam, can be cured more quickly as temperature of adhesives increases. In this study, dielectric properties of larch wood and PRF adhesives were experimentally evaluated, and the mechanism of HF heating, which induced the fast curing of glue layer in glulam, was theoretically analyzed. Result of our experiments showed relative loss factor of PRF resin, which leads temperature increase, was higher than that of larch wood. Also, it showed density and specific heat of PRF, which are resistance factors of temperature increase, were higher than those of wood. It was expected that the heat generation in PRF resin by HF heating would occur greater than in larch wood, because the ratio of relative loss factor to density and specific heat of PRF resin was greater than that of larch wood. Through theoretical approach with the experimental results, the relative strengths of ISM band HF electric fields to achieve a target heating rate were estimated.

• Progress in Superconductivity and Cryogenics
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• v.4 no.1
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• pp.30-34
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• 2002

In this Paper, Insulation of current lead in the conduction-cooled DC reactor for the 1.2kV class 3 high-Tc superconducting fault current limiter(SFCL) is studied. Thermal link which conducts heat energy but insulates electrical energy is selected as a insulating device for the current lead in the conduction-cooled Superconducting DC reactor. It consists of oxide free copper(OFC) sheets, Polyimide films, glass fiberglass reinforced Plastics (GFRP) plates and interfacing material such an indium or thermal compound. Through the test of dielectric strength in L$N_2$, polyimide film thickness of 125 ${\mu}{\textrm}{m}$ is selected as a insulating material. Electrical insulation and heat conduction are contrary to each other. Because of low heat conductivity of insulator and contact area between electrical insulator and heat conductor, thermal resistance of conduction-cooled system is increased. For the reducing of thermal resistance and the reliable contact between Polyimide and OFC, thermal compound or indium can be used As thermal compound layer is weak layer in electrical field, indium is finally selected for the reducing of thermal resistance. Thermal link is successfully passed the test. The testing voltage was AC 2.5kVrms and the testing time was 1 hour.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04a
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• pp.5-8
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• 2004

We have investigated equivalent-circuit analysis of organic light-emitting diodes using frequency-dependent response of $ITO/Alq_3(60nm)/Al$ device at two different bias voltages. Complex impedance Z of the device was measured in the frequency range of 40Hz~1MHz. A Cole-Cole plot shows that there are two dielectric relaxations at the bias below turn-on voltage, and one relaxation at the bias above turn-on voltage. We are able to interpret the frequency-dependent response in terms of equivalent-circuit model of contact resistance $R_s$ in series with parallel combination of resistance $R_p$ and capacitance $C_p$. We have obtained contact resistance $R_s$ around $90{\Omega}$, mainly from the ITO anode.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2000.04a
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• pp.131-134
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• 2000

Increased temperature adversely affects the reliability of a device. So, package material should have high thermal diffusion, i.e., high thermal conductivity. And, there are several other physical properties of polymeric materials that are important to microelectronics packaging, some of which are a low dielectric constant, a low coefficient of thermal expansion (CTE), and a high flexural strength. In this study, to get practical maximum packing fraction of AIN (granular type) filled EMC, the properties such as the spiral flow, thermal conductivity, CTE, and water resistance of AIN-filled EMC (65-vol%) were evaluated according to the size of AIN and the filler-size distribution. Also, physical properties of AIN filled EMC above 65-vol% were evaluated according to increasing AIN content at the point of maximum packing fraction (highly loading condition). The high loading conditions of EMC were set $D_L/D_S$=12 and $X_S$=0.25 like as filler of sphere shape and the AIN filled EMC in this conditions can be obtained satisfactory fluidity up to 70-vol%. As a result, the AIN filled EMC (70-vol%) at high loading condition showed improved thermal conductivity (about 6 W/m-K), dielectric constant (2.0~3.0), CTE(less than 14 ppm/$^{\circ}C$) and water resistance. So, the AIN filled EMC (70-vol%) at high loading condition meets the requirement fur advanced microelectronic packaging materials.

• Carbon letters
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• v.25
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• pp.1-13
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• 2018

Gold functionalized graphene oxide (GOAu) nanoparticles were reinforced in acrylonitrile-butadiene rubbers (NBR) via solution and melt mixing methods. The synthesized NBR-GOAu nanocomposites have shown significant improvements in their rate of curing, mechanical strength, thermal stability and electrical properties. The homogeneous dispersion of GOAu nanoparticles in NBR has been considered responsible for the enhanced thermal conductivity, thermal stability, and mechanical properties of NBR nanocomposites. In addition, the NBR-GOAu nanocomposites were able to show a decreasing trend in their dielectric constant (${\varepsilon}^{\prime}$) and electrical resistance on straining within a range of 10-70%. The decreasing trend in ${\varepsilon}^{\prime}$ is attributed to the decrease in electrode and interfacial polarization on straining the nanocomposites. The decreasing trend in electrical resistance in the nanocomposites is likely due to the attachment of Au nanoparticles to the surface of GO sheets which act as electrical interconnects. The Au nanoparticles have been proposed to function as ball rollers in-between GO nanosheets to improve their sliding on each other and to improve contacts with neighboring GO nanosheets, especially on straining the nanocomposites. The NBR-GOAu nanocomposites have exhibited piezoelectric gauge factor (${GF_{\varepsilon}}^{\prime}$) of ~0.5, and piezo-resistive gauge factor ($GF_R$) of ~0.9 which clearly indicated that GOAu reinforced NBR nanocomposites are potentially useful in fabrication of structural, high temperature responsive, and stretchable strain-sensitive sensors.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.4
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• pp.659-665
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• 2017

Power semiconductor devices required the low on-resistance and high breakdown voltage. Wide band-gap materials opened a new technology of the power devices which promised a thin drift layer at an identical breakdown voltage. The diamond had the wide band-gap of 5.5 eV which induced the low power loss, high breakdown capability, low intrinsic carrier generation, and high operation temperature. We investigated the p-type pseudo-vertical diamond Schottky barrier diodes using a numerical simulation. The impact ionization rate was material to calculating the breakdown voltage. We revised the impact ionization rate of the diamond for adjusting the parallel-plane breakdown field at 10 MV/cm. Effects of the field plate on the breakdown voltage was also analyzed. A conventional diamond Schottky barrier diode without field plate exhibited the high forward current of 0.52 A/mm and low on-resistance of $1.71{\Omega}-mm$ at the forward voltage of 2 V. The simulated breakdown field of the conventional device was 13.3 MV/cm. The breakdown voltage of the conventional device and proposed devices with the $SiO_2$ passivation layer, anode field plate (AFP), and cathode field plate (CFP) was 680, 810, 810, and 1020 V, respectively. The AFP cannot alleviate the concentration of the electric field at the cathode edge. The CFP increased the breakdown voltage with evidences of the electric field and potential. However, we should consider the dielectric breakdown because the ideal breakdown field of the diamond is higher than that of the $SiO_2$, which is widely used as the passivation layer. The real breakdown voltage of the device with CFP decreased from 1020 to 565 V due to the dielectric breakdown.