• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.182-188
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• 2011

Polysilazane and polymethylsilazane based precursor films were deposited on Si-substrate by spin-coating, subsequently annealed at $150{\sim}850^{\circ}C$, and characterized. Structural analysis, shrink, compositional change, etch rate, and gap-filling were observed. Annealing the precursor films led to formation of spin-on dielectric films. C-containing precursor films showed that less loss of N, H, and C while less gain of O than that of C-free precursor films at $400^{\circ}C$, but more loss of N, H, and C while more gain of O at $850^{\circ}C$. Thus polysilazane based precursor films exhibited less reduction in thickness of 14.5% than silazane based one of 15.6% at $400^{\circ}C$ but more 37.4% than 19.4% at $850^{\circ}C$. FTIR indicated that C induced smaller amount of Si-O bond, non-uniform property, and lower resistance to chemical etching.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.506-508
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• 2005

In general, organic TFTs are comprised of four components: gate electrode, gate dielectric, organic active semiconductor layer, and source and drain contacts. The TFT current, in turn, is typically determined by channel length and width, carrier field effect mobility, gate dielectric thickness and permittivity, contact resistance, and biasing conditions. More recently, a number of techniques and processes have been introduced to the fabrication of OTFT circuits and displays that aim specifically at reduced fabrication cost. These include microcontact printing for the patterning of metals and dielectrics, the use of photochemically patterned insulating and conducting films, and inkjet printing for the selective deposition of contacts and interconnect pattern. In the fabrication of organic TFTs, microcontact printing has been used to pattern gate electrodes, gate dielectrics, and source and drain contacts with sufficient yield to allow the fabrication of transistors. We were fabricated a pentacene OTFTs on flexible PEN film. Au/Cr was used for the gate electrode, parylene-c was deposited as the gate dielectric, and Au/Cr was chosen for the source and drain contacts; were all deposited by ion-beam sputtering and patterned by microcontact printing and lift-off process. Prior to the deposition of the organic active layer, the gate dielectric surface was treated with octadecyltrichlorosilane(OTS) from the vapor phase. To complete the device, pentacene was deposited by thermal evaporation and patterned using a parylene-c layer. The device was shown that the carrier field effect mobility, the threshold voltage, the subthreshold slope, and the on/off current ratio were improved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.3
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• pp.298-302
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• 2023

In this paper, we discussed the effect of field plate dielectric materials such as silicon dioxide (SiO₂), aluminum oxide (Al₂O₃), and hafnium oxide (HfO₂) on the breakdown characteristics of β-Ga₂O₃ Schottky barrier diodes (SBDs). The breakdown voltage (BV) of the SBDs with a field plate was higher than that of SBDs without a field plate. The higher dielectric constant of HfO₂ contributed to the superior reduction in electric field concentration at the Schottky junction edge from 5.4 to 2.4 MV/cm. The SBDs with HfO₂ field plate showed the highest BV of 720 V, and constant specific on-resistance (R_on,sp) of 5.6 mΩ·cm², resulting in the highest Baliga's figure-of-merit (BFOM) of 92.0 MW/cm². We also investigated the effect of dielectric thickness and field plate length on BV.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.2
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• pp.60-64
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• 2011

High sensitivity IR image sensors require materials characteristics with temperature coefficient of resistance (TCR) and IR range absorption. In this study, the metal-dielectric thermo sensitive films (MDTF) based on $(SiO_2)_x-(Ti)_y$ composition were deposited on substrates of germanium and glass by thermal evaporator. The $SiO_2$ : Ti mixture was made from the ratio of 9 : 1, 8 : 2, 7 : 3, 6 : 4, respectively. $(SiO_2)_x-(Ti)_y$ mixture powder was loaded on tungsten boat in evaporator and was 15.5 cm from the substrate. Resistance of $(SiO_2)_x-(Ti)_y$ in the range of 273~333K were measured as a function of temperature. Temperature coefficient of resistance (TCR) was calculated by the resistance variation. Under the various mixture ratios condition, it is possible to obtain $SiO_2$-Ti layers with resistance from units kilo-ohm to hundreds kilo-ohm. Finally, our results showed that Temperature coefficient of resistance (TCR) of these films varies from -1.4 to $-2.6%K^{-1}$.

• Progress in Superconductivity
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• v.9 no.2
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• pp.146-151
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• 2008

Measurements of surface resistance ($R_s$) of high temperature superconductor (HTS) films with accuracy are essential for microwave applications of HTS materials. In using the dielectric resonator method, uncertainties in the unloaded quality factor of the resonator cause significant errors in the measured $R_s$ of HTS films. We compare the Rs values of $YBa_2Cu_3O_{7-{\delta}}$ films calculated from the $Q_0$ as determined from the Lorentzian fit with that from the $Q_0$ as determined from the S-parameter circle-fit at temperatures between 15 K and 77 K. The two sets of values appeared to differ by 5%, 7%, 6%, and 11% at temperatures of 15, 60, 70, and 77 K, respectively, from each other, implying that careful error analysis needs to be performed in obtaining the $R_s$ of HTS films by using the Lorentzian-fit method, with the ones determined from the S-parameter circle-fit used as the reference.

• Agricultural and Biosystems Engineering
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• v.1 no.1
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• pp.30-37
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• 2000

Wet porous media representing agronomic soil that contains variable water content with variable electrolyte concentration was measured to study the shape of the curves of the electric double layer capacitance versus frequency (from 10 KHz to 10 MHz. This was done in an attempt to find the lowest practical operating frequency for developing low cost dielectric constant soil moisture probes. Cellulose sponge was used as the porous media. A high frequency electronic bridge circuit was developed for measuring the equivalent network parallel resistance and capacitance of porous media. It appears that the effects of the electric double layer component of the total parallel network capacitance essentially disappear at operating frequencies greater than approximately 25 MHz at low electrolyte concentrations but are still important at 50 MHz at higher concentrations. At these frequencies, the double layer capacitance masks the diffusion region capacitance where true water content capacitance values reside. The general shape of the curve of volumetric water content versus porous media dielectric constant is presented, with an empirical equation representing data for this type of curve. It was concluded that the lowest frequency where dielectric constant values which represent true water content information will most likely be found is between 30 and 50 MHz at low electrolyte concentrations but may be above 50 MHz when the total electrolyte concentration is near the upper level required for most mesophyte plant nutrition.

• Journal of Powder Materials
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• v.15 no.1
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• pp.53-57
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• 2008

The amorphous $Fe_{73}Si_{16}B_7Nb_3Cu_1$(at%) alloy strip was pulverized using a jet mill and an attrition mill to get flake-shaped powder. The flake powder was mixed with dielectric $BaTiO_3$ powder and its dispersant to increase the permittivity. The powders covered with dielectric powders and its dispersant were mixed with a binder and a solvent and then tape-cast to form sheets. The absorbing properties of the sheets were measured to investigate the roles of the dielectric powder and its dispersant. The results showed that the addition of $BaTiO_3$ powders and its dispersant improved the absorbing properties of the sheets noticeably. The powder sheet mixed with 5 wt% of $BaTiO_3$ powder and 1 wt% of dispersant showed the best electromagnetic wave absorption rate because of the increase of the permittivity and the electrical resistance.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.4
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• pp.5-8
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• 2009

In this paper, a high-quality low-temperature co-fired ceramic (LTCC) solenoid inductor using a solder ball and an air cavity on a silicon wafer for three-dimensional (3-D) system-in-package (SiP) is proposed. The LTCC multi-layer solenoid inductor is attached using Ag paste and solder ball on a silicon wafer with the air cavity structure. The air cavity is formed on a silicon wafer through an anisotropic wet-etching technology and is able to isolate the LTCC dielectric loss which is equivalent to a low k material effect. The electrical coupling between the metal layer and the LTCC dielectric layer is decreased by adopting the air cavity. The LTCC solenoid inductor using the solder ball and the air cavity on silicon wafer has an improved Q factor and self-resonant frequency (SRF) by reducing the LTCC dielectric resistance and parasitic capacitance. Also, 3-D device stacking technologies provide an effective path to the miniaturization of electronic systems.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.5
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• pp.113-120
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• 1994

Silicon flow sensor that can detect the velocity and direction of air flow was designed and fabricated by integrated circuit process and bulk micromachining technique. The flow sensor consists of three-layered dielectric diaphragm, a heater at the center of the diaphragm, and four thermopiles surrounding the heater at each side of diaphragm as sensing elements. This diaphragm structure contributes to improve the sensitivity of the sensor due to excellent thermal isolation property of dielectric materials and their tiny thickness. The flow sensor has good axial symmetry to sense 2-D air flow with the optimized sensing position in the proposed structure. The sensor is fabricated using CMOS compatible process followed by the anisotropic etching of silicon in KOH and EDP solutions to form I$\mu$ m thick dielectric diaphragm as the last step. TCR(Temperature Coefficient of Resistance) of the heater of the fabricated sensors was measured to calculate the operating temperature of the heater and the output voltage of the sensor with respect to flow velocity was also measured. The TCR of the polysilicon heater resistor is 697ppm/K, and the operating temperature of the heater is 331$^{\circ}C$ when the applied voltage is 5V. Measured sensitivity of the sensor is 18.7mV/(m/s)$^{1/2}$ for the flow velocity of smaller than 10m/s.

• Advances in materials Research
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• v.5 no.3
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• pp.181-192
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• 2016

In this work effect of high energy milling on the structural and electrical properties of $Ba(Fe_{1/2}Ta_{1/2})O_3$ (BFT) ceramic synthesized using standard solid-state reaction method were investigated. X-ray diffraction studies indicated that the unit cell structure for all the samples to be hexagonal (space group: P3m1). FTIR spectra also confirmed the formation of BFT without any new phase. The milled (10 h) BFT ceramic showed the formation of small grain sizes (<$2{\mu}m$) which is beneficial for dielectric applications in high density integrated devices. Besides, the milled (10 h) BFT ceramic sample exhibited superior dielectric properties (enhancement in ${\varepsilon}^{\prime}-value$ and reduction in $tg{\delta}-value$) compared to un-milled one. Impedance analysis indicated the negative temperature coefficient of resistance (NTCR) character. The correlated barrier hopping model (jump relaxation type) is found to successfully explain the mechanism of charge transport in present ceramic samples.