• Korean Journal of Materials Research
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• v.8 no.11
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• pp.1067-1073
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• 1998

High quality diamond films of the silicon on diamond (SOD) structure are deposited using CO and $H_2$ gas mixture in microwave plasma chemical vapor deposition (CVD), a SOD structure is fabricated using low pressure CVD polysilicon on diamond/ Si(100) substrate. The crystalline structure of the diamond films which composed of { 111} and {100} planes. were changed from octahedral one to cubo-octahedron one as the CO/$H_2$ ratios are increased. The high quality diamond films without amorphous carbon and non-diamond elements were deposited at the CO/$H_2$ flow rate of 0.18. and the main phase of the diamond films shows (111) plane. The diamond/Si(lOO) structure shows that the interface is flat without voids. The measured dielectric constant. leakage current and breakdown field were $5.31\times10^{-9}A/cm^2$ and $9\times{10^7}{\Omega}cm$ respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.85-88
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• 2003

$Sr_xBa_{1-x}Nb_2O_6$(SBN, $025{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in Ar/$O_2$ atmosphere. SBN30 thin film of 500 ${\AA}$ was pre-deposited as a seed layer on Pt(l00)/$TiO_2$/$SiO_2$/Si substrate followed by SBN60 deposition up to 4500 ${\AA}$ in thickness. SBN60/SBN30 layer was deposited at different Oxygen amount of 0, 8.1, 17, and 31.8 sccm, respectively. The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. The crystal structure and the electric properties depended on the Oxygen amount, heating temperature and was the best at O2 = 8.1 seem, $750^{\circ}C$. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was 13 ${\mu}C/cm^2$, the coercive field (Ec) 75 kV/cm, and the dielectric constant 1492, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.4
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• pp.407-415
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• 2011

The stability condition and wideband characteristics of 3D ID-FDTD algorithm which has low dispersion error with isotropic dispersion are presented in this paper. 3D ID-FDTD method was proposed to improve the defect of the Yee FDTD such as the anisotropy and large dispersion error. The published paper calculated the stability condition of 3D ID-FDTD algorithm by using numerical method, however, it is thought that the examples were not sufficient to verify the stability condition. Thus, in this paper, various simulations are included in order to hold reliability under the conditions that the plane wave propagation is assumed with a single frequency and a wideband frequency. Also, the 3D ID-FDTD algorithm is compared to those that have the similar FDTD algorithm with ID-FDTD such as Forgy's method and non-standard FDTD method in a wideband. Finally, the radar cross section(RCS) for the large sphere with high dielectric constant is calculated.

• Korean Journal of Optics and Photonics
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• v.9 no.6
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• pp.380-384
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• 1998

As the development of ultrahigh power laser system, the laser mirrors must require high-resistant and effectively cooled. So, the study for the optical multilayer systems having large thermal diffusivity become important. In this study, we designed and fabricated two-layer anti-reflection (AR) optical coating samples, in different evaporation conditions of coating speeds (10, 20 $\AA$/s) and substrate temperatures (50, 100, 150, 20$0^{\circ}C$), using two dielectric materials $MgF_2$ and ZnS which have different refractive indices and measured the through-plane thermal diffusivity by using photoacoustic effect. The optical thicknesses of $MgF_2$ and ZnS layer were fixed as 5/4λ (λ=514.5nm) and λ, respectively, and the thermal diffusivity of the samples fabricated in the different conditions was obtained from the measured amplitude of photoacoustic signals by changing chopping frequency of $Ar^+$ layer beam. The results told us that the thermal diffusivity of the sample fabricated in the condition of 10 $\AA$/s and 15$0^{\circ}C$ showed the largest value.

• Journal of Adhesion and Interface
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• v.20 no.4
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• pp.155-161
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• 2019

Understanding charge transport anisotropy at the interface of conjugated nanostructures basically gives insight into structure-property relationship in organic field-effect transistors (OFET). Here, the anisotropy of the field-effect mobility at the interface between 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) single crystal with cofacial molecular stacks in a-b basal plane and SiO gate dielectric was investigated. A solvent exchange method has been used in order for TIPS-pentacene single crystals to be grown on the surface of SiO₂ thin film, corresponding to the charge accumulation at the interface in OFET structure. In TIPS-pentacene OFET, the anisotropy ratio between the highest and lowest measured mobility is revealed to be 5.2. By analyzing the interaction of a conjugated unit in TIPS-pentacene with the nearest neighbor units, the mobility anisotropy can be rationalized by differences in HOMO-level coupling and hopping routes of charge carriers. The theoretical estimation of anisotropy based on HOMO-level coupling is also consistent with the experimental result.

• Journal of IKEEE
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• v.7 no.2 s.13
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• pp.223-229
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• 2003

In this thesis, the characteristics of an inverted-F antenna for the 2.4GHz and 5.8GHz zwirless local area network(WLAN) have been analysed in terms of the variation of design parameters. The antenna can be integrated on WLAN for notebook printed circuit board, and the characteristics in terms of the variation of the gap between feed line and shorting stub, gap between antenna's leg and ground plane, antenna leg's width, substrate's height and dielectric constant are analysed. By using these characterization plot of design parameter, the tuning techniques are proposed to design optimum antenna. The designed antenna has 170MHz, 500MHz frequency bandwidth ,VSWR is 1.6, 1.14 and 3.5dBi gain.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.5 s.120
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• pp.503-510
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• 2007

This paper proposes the design scheme of internal triple band antenna intended for using in GSM900, DCS1800, and PCS1900 bands. The suggested folding metal plates of the two branches are mounted on a dielectric coated ground plane for size miniaturization and durability. Return losses are overlapped when length of metal branches are controlled. This is important technique for wide band operation. For the suggested antenna geometry its return loss was calculated by HFSS 9 simulator, and was shown to be -10 [dB] less within the required band. Also, gain and radiation pattern of antenna were measured using far field measurement system in an anechoic chamber. The measured peak gain is more than 3.0 [dBi], and the average gain is over -1.0 [dBi] for the triple band, which is regarded as satisfactory for the internal antenna application. Also, the radiation pattern for two frequencies shows a similar shape each other within the required band.

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.688-692
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• 2006

Ferroelectric lanthanides-substituted $Bi_4Ti_3O_{12}$ $(Bi_{4-x}Ln_xTi_3O_{12}, BLnT)$ thin films approximately 200 nm in thickness were deposited by metal organic chemical vapor deposition onto Pt(111)/Ti/SiO$_2$/Si(100) substrates. Many researchers reported that the lanthanides substitution for Bi in the pseudo-perovskite layer caused the distortion of TiO$_6$ octahedron in the a-b plane accompanied with a shift of the octahedron along the a-axis. In this study, the effect of lanthanides (Ln=Pr, Eu, Gd, Dy)-substitution and crystallization temperature on their ferroelectric properties of bismuth titanate $(Bi_4Ti_3O_{12}, BIT)$ thin films were investigated. As BLnT thin films were substituted to lanthanide elements (Pr, Eu, Gd, Dy) with a smaller ionic radius, the remnant polarization (2P$_r$) values had a tendency to increase and made an exception of the Eu-substituted case because $Bi_{4-x}Eu_xTi_3O_{12}$ (BET) thin films had the smaller grain sizes than the others. In this study, we confirmed that better ferroelectric properties can be expected for films composed of larger grains in bismuth layered peroskite materials. The crystallinity of the thin films was improved and the average grain size increased as the crystallization temperature,increased from 600 to 720$^{\circ}C$. Moreover, the BLnT thin film capacitor is characterized by well-saturated polarization-electric field (P-E) curves with an increase in annealing temperature. The BLnT thin films exhibited no significant degradation of switching charge for at least up to $1.0\times10^{11}$ switching cycles at a frequency of 1 MHz. From these results, we can suggest that the BLnT thin films are the suitable dielectric materials for ferroelectric random access memory applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.271-274
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• 2003

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin films of different thickness were pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $4500\;{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800\;^{\circ}C$ in air, respectively, The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was difference in the crystal structure with heat-treatment temperature, and the electric properties depended on the heating temperature and the seed-layer thickness. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15\;{\mu}C/cm^2$, the coercive field (Ec) 65 kV/cm, and the dielectric constant 1492, respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.11
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• pp.4515-4521
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• 2010

A Yagi antenna, which is a typical directional antenna, has been designed and fabricated as a surveillance sensor. The proposed Yagi antenna satisfies the requirements as a surveillance sensor; impedance bandwidth of 7.2-8.2GHz, maximum gain of 7dBi, and 3dB beamwidth of $60^{\circ}$ in the azimuthal plane. The proposed Yagi antenna is designed with 3 directors and one driven element on a dielectric substrate. Also, a microstrip-to-CPS balun is designed and applied to the proposed antenna for balanced feeding of the dirven element. The performance of the proposed antenna has been verified by comparing the simulation and measurement results.