• Title/Summary/Keyword: Dielectric plane

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Design of Cavity-Backed High Gain Dual Band Microstrip Antenna Using Frequency Selective Surface (FSS 구조를 이용한 Cavity-Backed 고이득 이중 대역 마이크로스트립 안테나 설계)

  • Kim, Byoung-Chul;Choo, Ho-Sung;Park, Ik-Mo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.2
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    • pp.152-163
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    • 2010
  • In this paper, a cavity-backed high gain dual band microstrip antenna with Frequency Selective Surface space(FSS) for WLAN is proposed. The proposed antenna that operates in IEEE 802.11a/b bands with similar radiation pattern and gain is fabricated on RO4003 substrate with a dielectric constant of 3.38. The size of the antenna is $71.5{\times}42.0{\times}6.6\;mm^3$, and the FSS size is $120.0{\times}120.02\;mm^3$. The ground plane size including cavity is $150.0{\times}145.0\;mm^3$. The antenna is fed by coaxial cable. The simulated bandwidths of the antenna are 2.369~2.517 GHz and 5.608~5.833 GHz for VSWR<2. The gains are 11.23 dBi and 12.60 dBi, respectively, for the lower and upper bands.

Effect of Seed-layer on the Crystallization and Electric Properties of SBN60 Thin Films (SBN60 박막의 결정화 및 전기적 특성에 관한 씨앗층의 영향)

  • Jang, Jae-Hoon;Lee, Dong-Gun;Lee, Hee-Young;Jo, Sang-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.723-727
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    • 2003
  • [ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin film of $1000{\AA}$ was pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $3000{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800^{\circ}C$ in air, respectively The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was no difference in the crystal structure with heat-treatment temperature, but the electric properties depended on the heating temperature and was the best at $750^{\circ}C$. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15{\mu}C/cm^2$, the coercive field (Ec) 75 kV/cm, and the dielectric constant 1075, respectively.

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Crystallization and Electrical Properties of SBM Thin Films by IBSD Process (IBSD법에 의한 SBN60 강유전체 박막의 배향 및 전기적 특성)

  • Jeong, Seong-Won;Jang, Jae-Hoon;Lee, Hee-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.869-873
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    • 2004
  • [ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient, piezoelectric, and a photo refractive properties. In this study, SBN60(x=0.6) thin film was manufactured by ion beam sputtering technique. Using the prepared SBN60 target in $Ar/O_2$ atmosphere as-deposited SBN60 thin film on Pt(100)/$TiO_2/SiO_2/Si$ substrate crystallization and orientation behavior as well as electric properties of SBN60 thin film were examined. SBN60 deposition up to $3000{\AA}$ in thickness, SBN60 thin film was heat-treated at $650^{\circ}C{\sim}800^{\circ}C$. The orientation was shown primarily along (001) plane from XRD pattern where working pressure was $4.3{\times}10^{-4}$ torr. The deposited layer was uniform, preferred orientatin and crystallization behavior resulted in the change of $O_2$ ratio was observed. In electric propertie of Pt/SBN60/Pt thin film capacitor remnant polarization (2Pr) value was $10{\mu}C/cm^2$, the coercive filed (Ec) 50 kV/cm, and the dielectric constant 615, respectively.

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Design of CPW-Fed Broadband Antenna Using the CSRR for WLAN Band Notched Characteristic (CSRR을 이용한 WLAN 대역 저지 특성 CPW 급전 광대역 안테나 설계)

  • Kim, Jang-Yeol;Lee, Seung-Woo;Kim, Nam;Oh, Byoung-Cheol
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.5
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    • pp.528-537
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    • 2011
  • In this paper, a broadband antenna of the CPW structure with a band-notched characteristic is presented. To obtain this characteristic, the complementary split ring resonator(CSRR) is inserted in the ground plane. In addition, the IEEE 802.11a WLAN band(5.15~5.825 GHz) appears in the band-notched characteristic. The proposed antenna dimension is $36{\times}60{\times}1.6\;mm^3$, and it is designed on the FR-4 substrate having a relative dielectric constant of 4.4. The designed antenna shows that the resonant frequency is 2.03~10.78 GHz below the return loss of -10 dB and a VSWR less than 2 was satisfied. As a result, the proposed CSRR has a band-notched characteristic in the range of 4.917~6.017 GHz which the center frequency is about 5.4 GHz band.

A Design of Inverted-Triangle UWB Monopole Antenna with Band Rejection Slot (대역 저지 슬롯이 추가된 역삼각형 모노폴 UWB 안테나의 설계)

  • Choi, Hyung-Seok;Choi, Kyoung;Hwang, Hee-Yong
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.5
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    • pp.516-521
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    • 2011
  • In this paper, an inverted-triangle patch UWB antenna with an uneven ground planes and an inverted T-slot for 5 GHz WLAN band rejection is presented. The operating bandwidth of the proposed antenna fed with the CPW line is expanded from 3.1 GHz to 10.6 GHz for about -10 dB return loss using three angular parameters correlated to the main patch and the ground plane. The fabricated antenna on Taconic RF-60A substrate with 6.16 relative dielectric constant and 0.64 mm thickness has a main antenna patch size of 36 mm${\times}$19.5 mm. The measured results show return losses of about -10 dB and nearly omni-directional radiation patterns. The proposed UWB antenna has advantages of easily adjustable impedance characteristics by the three angular parameters and easily accomplishable band rejection characteristics by the inverted T-slot.

A Dual Baud Microstrip Antenna with Soft Surface for Gapfiller Applications (Soft Surface를 이용한 신호 중계 장치용 이중 대역 마이크로스트립 안테나)

  • Kim, Byoung-Chul;Ryu, Joon-Gyu;Choo, Ho-Sung;Jang, Dae-Ik;Park, Ik-Mo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.20 no.11
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    • pp.1145-1160
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    • 2009
  • In this paper, a dual band microstrip antenna with soft surface for gapfiller applications is proposed. The proposed antenna with similar radiation pattern and gain is fabricated on RO4003 substrate with a dielectric constant of 3.38 and a thickness of 0.508 mm, and operates in IEEE 802.11a/b bands. The size of the antenna is $50{\times}56.5{\times}5.5\;mm^3$ and the ground plane size including soft surface structure is $175.0{\times}154.4\;mm^2$. The antenna is fed by coaxial cable. The simulated bandwidths of the antenna are 2.388~2.493 GHz and 5.561~6.051 GHz for VSWR<2. The gains are 10.63 dBi and 10.33 dBi, respectively, for the lower and upper bands.

High Efficiency FPCB Antenna for the Dual Band Mobile Phone (휴대폰용 2중 대역 고효율 FPCB 안테나)

  • Seo, Sang-Hyuk;Son, Tae-Ho;Jo, Young-Min
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.20 no.11
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    • pp.1194-1200
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    • 2009
  • An internal antenna which has 1 cc volume was implemented on the FPCB(Flexible Printed Circuit Board) for the mobile phone. We increased antenna gain and efficiency by the applying of current direction concept on the antenna pattern for this small antenna. Short antenna length for the GSM band was compensated by the spiral inductor on the FPCB. For broadening bandwidth on GSM band, it's applied 2 spiral inductors. A conductor pattern for the DCS band was positioned perpendicular with the FPCB. Antenna was implemented on FPCB that is dielectric constant 4.4 and thickness 0.05 mm, and FPCB was attached on a carrier dimensioned $L{\times}W{\times}H=30{\times}7{\times}5\;mm$. Measurements showed that max. VSWR 2:1, efficiency 42.49~60.95 % and 47.95~73.21 %, average gain -3.72~-2.15 dBi and -3.19~-1.35 dBi on the GSM and DCS band, respectively. These results are good performances among the small antenna. And the radiation patterns are omnidirectional on the H-plane to both band.

A Study on Slot Coupled Capacitor Resonator for Non-Invasive Glucose Monitoring in Earlobe (귓불에서 비침습 혈당관찰을 위한 슬롯결합 커패시터 공진기 연구)

  • Yun, Gi-Ho
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.28 no.4
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    • pp.279-285
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    • 2017
  • In this paper, the resonator with a parallel plate capacitor is newly proposed around sub-microwave frequency band and applied to earlobe for non-invasive glucose monitoring the human biological tissue. The capacitor including the earlobe as dielectric material is connected to inductive slot in the ground plane of the microstrip line. Based on the simulation, one port resonator circuit is designed and fabricated as a prototype. Three step glucose concentration levels(0, 250, 500 mg/dL) was tested, and its reflection coefficients($S_{11}$) were measured. Owing to high Q resonator more than 100, resonant frequency shift of about 9 MHz per glucose level of 250 mg/dL has been successfully measured. This proves that the proposed sensor is applicable to a blood glucose sensor.

Fabrication of CSLR-loaded Inset Fed Patch Antenna with a Conducting Reflector (반사판을 갖는 인셋 급전 CSLR 패치 안테나 제작)

  • Hong, Jae-Pyo;Kim, Byung-Mun;Son, Hyeok-Woo
    • The Journal of the Korea institute of electronic communication sciences
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    • v.11 no.11
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    • pp.1047-1052
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    • 2016
  • In this paper, we propose the CSLR(: Complementary Single Loop Resonators)-loaded inset fed patch antenna with a conducting reflector to improve the radiation patterns. Reflector of the proposed antenna is located below about ${\lambda}_0/4$ from the ground plane of the patch, the size is about two times of the patch. The proposed antenna is designed and fabricated on the substrate which has a dielectric constant and thickness with 2.5 and 0.787 mm, respectively. Simulation results are obtained by using the HFSS, 3D EM Solver based Finite Element Method(: FEM). The resonant frequency and matching characteristics of the antenna with reflector are substantially the same as when there is no change in the antenna without reflector, it is confirmed that radiation patterns are significantly improved by the reflector.

First-principles Study of Graphene/Hexagonal Boron Nitride Stacked Layer with Intercalated Atoms

  • Sung, Dongchul;Kim, Gunn;Hong, Suklyun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.185.2-185.2
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    • 2014
  • We have studied the atomic and electronic structure of graphene nanoribbons (GNRs) on a hexagonal boron nitride (h-BN) sheet with intercalated atoms using first-principles calculations. The h-BN sheet is an insulator with the band gap about 6 eV and then it may a good candidate as a supporting dielectric substrate for graphene-based nanodevices. Especially, the h-BN sheet has the similar bond structure as graphene with a slightly longer lattice constant. For the computation, we use the Vienna ab initio simulation package (VASP). The generalized gradient approximation (GGA) in the form of the PBE-type parameterization is employed. The ions are described via the projector augmented wave potentials, and the cutoff energy for the plane-wave basis is set to 400 eV. To include weak van der Waals (vdW) interactions, we adopt the Grimme's DFT-D2 vdW correction based on a semi-empirical GGA-type theory. Our calculations reveal that the localized states appear at the zigzag edge of the GNR on the h-BN sheet due to the flat band of the zigzag edge at the Fermi level and the localized states rapidly decay into the bulk. The open-edged graphene with a large corrugation allows some space between graphene and h-BN sheet. Therefore, atoms or molecules can be intercalated between them. We have considered various types of atoms for intercalation. The atoms are initially placed at the edge of the GNR or inserted in between GNR and h-BN sheet to find the effect of intercalated atoms on the atomic and electronic structure of graphene. We find that the impurity atoms at the edge of GNR are more stable than in between GNR and h-BN sheet for all cases considered. The nickel atom has the lowest energy difference of ~0.2 eV, which means that it is relatively easy to intercalate the Ni atom in this structure. Finally, the magnetic properties of intercalated atoms between GNR and h-BN sheet are investigated.

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