• Journal of the Institute of Electronics Engineers of Korea SC
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• v.42 no.1
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• pp.39-45
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• 2005

As a basic research for the development of a non-invasive blood glucose sensor using millimeter waves, we have presented a method for measuring the dielectric properties of high loss dielectrics, based on the reflection method, and investigated the variation of the dielectric properties of glucose-water and glucose -0.9% NaCl solutions in the 10～90 GHz range. In the proposed method, a minimal reflection condition is formed by placing a specially-chosen low-loss plane-parallel plate in front of a high-loss medium under test at a given frequency range. Using the minimal power reflection coefficient and the corresponding frequency at this condition, tile dielectric properties of the medium can be determined. The measured results on pure water have shown the adequacy of the proposed method. The measured results on glucose-water and glucose -0.9% NaCl solutions in the 10～90 GHz range showed that the variations of the dielectric properties of glucose solutions according to the change of their glucose concentration were maximum in the 30～45 GHz range. From these facts we concluded that the variation of about 3 mole/L in the glucose solutions must be distinguished With the measurement accuracies of ±0.1 dB and ±0.01 GHz.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.35 no.1
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• pp.17-22
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• 2011

ZnO-based thin-film transistors (TFTs) have been fabricated and the mechanical characteristics of electric circuits, such as stress, strain, and deformation are analyzed by the finite element method (FEM). In this study, a mechanical-stability design guide for such systems is proposed; this design takes into account the stress and deformation of the bridge to estimate the stress distribution in an $SiO_2$ film with 0 to 5% stretched on 0.5-${\mu}m$-thick. The predicted buckle amplitude of $SiO_2$ bridges agrees well with experimental results within 0.5% error. The stress and strain at the contact point between bridges and a pad were measured in a previous structural analysis. These structural analysis suggest that the numerical measurement of deformation, SU-8 coating thickness for Neutral Mechanical Plane (NMP) and ITO electrode size on a dielectric layer was useful in enhancing the structural and electrical stabilities.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.3
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• pp.50-56
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• 2010

In this paper, compact broad-band antenna using circular spiral slot and CPW (coplanar waveguide) feed is proposed. The proposed antenna is designed on the same plane of the substrate by using CPW fed structure, archimediean spiral slot structure. So it was achieved both the size of compact antenna and the broad band. A archimediean spiral slot structure is introduced for resonance of medium band operation. The distances of a CPW feeder line and a ground plane are modified for impedance matching and lower/higher band operation. The proposed antenna has a compact size ($8mm\;{\times}\;13mm$) and it is etched on the FR-4 (relative dielectric constant 4.4, thickness 0.8mm) dielectric substrate. The simulated impedance bandwidth (VSWR $\leq$ 2) and maximum gain of the proposed antenna are 5.98GHz (4.1GHz ~ 10.08GHz) and 3.97dBi, respectively. The measured impedance bandwidth (VSWR $\leq$ 2) and maximum gain of the proposed antenna are 6.02GHz (4.48GHz ~ 10.5GHz) and 2.68dBi, respectively. The simulation and measured result shows good impedance matching and radiation pattern over the interesting frequency bands. It can be applied to antenna of broad-band wireless communication system.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.8
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• pp.872-878
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• 2014

This paper proposes a measurement method of the complex relative permittivity of semi-solid materials using a new cavity structure. Semi-solid materials are positioned in the proposed cavity where an aperture exists on each corner of the upper part and a ground plane is separated. In order to show the validation of the proposed method, we measured the complex relative permittivity of distilled water and 0.9 % saline by sensing a shift of resonant frequency and using Critical-Points Method, and compared the results with those derived from the Cole-Cole equation.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.281.1-281.1
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• 2016

Transition metal dichalcogenides (TMDCs) are promising layered structure materials for next-generation nano electronic devices. Many investigation on the FET device using TMDCs channel material have been performed with some integrated approach. To use TMDCs for channel material of top-gate thin film transistor(TFT), the study on high-k dielectrics on TMDCs is necessary. However, uniform growth of atomic-layer-deposited high-k dielectric film on TMDCs is difficult, owing to the lack of dangling bonds and functional groups on TMDC's basal plane. We demonstrate the effect of remote oxygen plasma pretreatment of large area synthesized few-layer MoSe2 on the growth behavior of Al2O3, which were formed by atomic layer deposition (ALD) using tri-methylaluminum (TMA) metal precursors with water oxidant. We investigated uniformity of Al2O3 by Atomic force microscopy (AFM) and Scanning electron microscopy (SEM). Raman features of MoSe2 with remote plasma pretreatment time were obtained to confirm physical plasma damage. In addition, X-ray photoelectron spectroscopy (XPS) was measured to investigate the reaction between MoSe2 and oxygen atom after the remote O2 plasma pretreatment. Finally, we have uniform Al2O3 thin film on the MoSe2 by remote O2 plasma pretreatment before ALD. This study can provide interfacial engineering process to decrease the leakage current and to improve mobility of top-gate TFT much higher.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.178-178
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• 2008

ZnO 바리스터는 인가되는 전압에 따라 저항이 변하는 전압 의존형 저항체이며 각종 전기 전자 정보통신용 제품에 정전기(ESD) 대책용 소자로 폭 넓게 사용되는 전자 세라믹스 부품이다. 특별히 Bi-based ZnO 바리스터는 다양한 상(phase)으로 구성되어 있으며 그 입계의 전기적 특성은 소량 첨가되는 dopant의 종류에 따라 다양하게 변하는 것으로 알려져 있다. 본 연구에서는 Bi-based ZnO 바리스터 (ZnO-$Bi_2O_3$, ZnO-$Bi_2O_3-Mn_3O_4$)에서 각종 유전함수$(Z^*,M^*,\varepsilon^*,Y^*,tan{\delta})$를 이용하여 입계의 주파수-온도에 대한 특성을 살펴 보았다. 일반적인 ZnO 바리스터 제조법으로 시편을 제작하여 78K~800K 온도 범위에서 각종 유전함수를 이용하여 복소 평면도(complex plane plot)와 주파수 응답도(frequency explicit plot)의 방법으로 defect level과 입계 특성(활성화 에너지, 정전용량, 저항, 입계 안정성 등)에 대하여 고찰하였다. ZnO-$Bi_2O_3$(ZB)계와 ZnO-$Bi_2O_3-Mn_3O_4$(ZBM)계 모두 상온 이하의 온도에서 $Zn_i$와 $V_o$의 결함이 나타났으며, 이들의 결함 준위는 각 유전함수에 따라 다소 차이가 났다. 입계 특성으로 ZB계는 이상구간(560~660K)을 전후로 1.15 eV $\rightarrow$ 1.49 eV의 활성화 에너지의 변화가 나타났지만, ZBM계는 이러한 현상이 나타나지 않았다. 또한 입계 전위 장벽의 온도 안정성에 대해서는 Cole-Cole model을 적용하여 분포 파라미터 (distribution parameter; $\alpha$)를 구하여 고찰하였다. ZB계의 입계 안정성은 온도에 따라 불안정해 졌지만, ZBM계는 안정하였다.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.17 no.5
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• pp.91-96
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• 2017

In this paper, we proposed a meander sleeve monopole antenna for low earth orbit satellite communications. The antenna has broadband property with the planar monopole and ground of meander sleeve. Monopole and ground conductors of the antenna are on the same plane, and exited through coaxial cable feeding. In order to confirm the property of antenna parameters, it was used a commercial software, HFSS, For the antenna fabrication, a FR4 dielectric substrate has a dielectric constant of 4.4 was used. The size of the antenna was $600mm{\times}20mm{\times}1.6mm$. Frequency band of the fabricated antenna was 130MHz~151MHz, and the bandwidth was 20MHz. Measurement results of the fabricated antenna, the return loss is more than -10dB return loss in the band could be obtained. Radiation pattern has a maximum gain of 2.64dBi value.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.4
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• pp.659-665
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• 2017

Power semiconductor devices required the low on-resistance and high breakdown voltage. Wide band-gap materials opened a new technology of the power devices which promised a thin drift layer at an identical breakdown voltage. The diamond had the wide band-gap of 5.5 eV which induced the low power loss, high breakdown capability, low intrinsic carrier generation, and high operation temperature. We investigated the p-type pseudo-vertical diamond Schottky barrier diodes using a numerical simulation. The impact ionization rate was material to calculating the breakdown voltage. We revised the impact ionization rate of the diamond for adjusting the parallel-plane breakdown field at 10 MV/cm. Effects of the field plate on the breakdown voltage was also analyzed. A conventional diamond Schottky barrier diode without field plate exhibited the high forward current of 0.52 A/mm and low on-resistance of $1.71{\Omega}-mm$ at the forward voltage of 2 V. The simulated breakdown field of the conventional device was 13.3 MV/cm. The breakdown voltage of the conventional device and proposed devices with the $SiO_2$ passivation layer, anode field plate (AFP), and cathode field plate (CFP) was 680, 810, 810, and 1020 V, respectively. The AFP cannot alleviate the concentration of the electric field at the cathode edge. The CFP increased the breakdown voltage with evidences of the electric field and potential. However, we should consider the dielectric breakdown because the ideal breakdown field of the diamond is higher than that of the $SiO_2$, which is widely used as the passivation layer. The real breakdown voltage of the device with CFP decreased from 1020 to 565 V due to the dielectric breakdown.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.8
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• pp.126-132
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• 2010

This paper presents dielectric characteristics of $N_2$ gas under impulse voltages in a quasi-uniform electric field gap. The experiments were carried out at the test gap applied by the 1.2/50[${\mu}s$] lightning impulse voltage, 180/2500[${\mu}s$] switching impulse voltage, 500[ns]/1[MHz] very fast transient overvoltage(VFTO). The gap separation of sphere-to-plane electrodes was 14[mm] and the electric field utilization factor was about 71.2[%]. The gas pressure ranges from 0.2 to 0.6[MPa]. As a result, the electrical breakdowns are occurred by streamer discharge. Breakdown voltages are linearly increased with the gas pressure and the highest breakdown voltage is appeared under the VFTOs having fast rising time. Breakdown voltages under the positive impulse voltages were higher than those under the negative ones, and also the time to breakdown in the positive polarity is longer than that in the negative polarity.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.8
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• pp.142-149
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• 2010

This paper describes dielectric characteristics of $SF_6$ and dry-air gases under lightning impulse voltages in a quasi-uniform electric field. In order to simulate to a quasi-uniform electric field, electric field utilization factor of the used sphere-plane electrode is 71[%]. The gas pressure of $SF_6$ ranges from 0.1 to 0.2[MPa] and that of dry-air ranges from 0.2 to 0.6[MPa]. Electrical breakdown voltages of $SF_6$ and dry-air gases are measured and analyzed as functions of the polarity of lightning impulse voltage and gas pressure. As a result, the electrical breakdown voltage of both gases under the positive lightning impulse voltage is higher than that under the negative one. The electrical breakdown voltage in $SF_6$ is almost higher than 2.67 times compared to dry-air. The results presented in this paper can be used as a useful information to evaluate the capability of alternative insulation gases for $SF_6$ in power distribution equipment with prominent ability against lightning surge.