• Applied Chemistry for Engineering
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• v.28 no.5
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• pp.597-600
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• 2017

$(C_{10}H_8N_2H)_2Cr_2O_7$ was synthesized by reacting 4,4'-bipyridine and chromium (VI) trioxide. The structure of the product was characterized with FT-IR (infrared spectroscopy) and elemental analysis. The oxidation of benzyl alcohol using $(C_{10}H_8N_2H)_2Cr_2O_7$ in various solvents showed that the reactivity increased with the increase of the solvent dielectric constant, in the order of DMF (N,N'-dimethylformamide) > acetone > chloroform > cyclohexane. In the presence of DMF, an acidic catalyst such as $H_2SO_4$ $(C_{10}H_8N_2H)_2Cr_2O_7$ oxidized benzyl alcohol (H) and its derivatives ($p-OCH_3$, $m-CH_3$, $m-OCH_3$, m-Cl, $m-NO_2$). Electron donating substituents accelerated the reaction rate, whereas electron acceptor groups retarded the reaction rate. Hammett reaction constant (${\rho}$) was -0.70 (308 K). The observed experimental data were used to rationalize the hydride ion transfer in the rate determining step.

• Fire Science and Engineering
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• v.25 no.6
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• pp.21-26
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• 2011

The purpose of this paper is to present the damage patterns of cellular phone (SCH_W830) batteries according to energy sources and have them utilized as data for the settlement of disputes between manufactures and consumers. The reliability was secured by maintaining the ambient temperature and humidity at $22{\pm}2^{\circ}C$ and 40~60 %, respectively. The voltage of the battery used for the tests was measured to be 4.18V between positive pole (+) and negative pole (-)(1), and 4.19 V between positive pole (+) and negative pole (-)(2). This study applied the Korean Industrial Standard (KS) to the flammability test of cellular phones due to a general flame applied to them and found that no damage occurred to the built-in battery even though the flame was applied to the cases of cellular phones for 30 seconds. From the results of immersing the cellular phones in the saline solution (NaCl, 0.9 %) for 180 seconds, it was found that there was a trace of carbonization and melting due to the heat caused by leaking current. It can be seen that when the cellular phones were heated for 70 seconds using a microwave oven (MWO), the areas containing the metal holder, recharging connector, antenna, etc., were melted and discolored and that other areas showed no particular problems. That is, while the external carbonization of cellular phones, built-in metals and dielectric materials, and damage and deformation of the battery terminal block, etc., occurred differently depending on the types of energy sources, the voltage showed comparatively constant characteristics. Therefore, it is thought to be possible to attribute the cause of damage to the battery by performing analysis taking into consideration comprehensively the characteristics of the flame spread pattern as well as the melting and deformation of metals.

• Bulletin of the Korean Chemical Society
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• v.32 no.1
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• pp.263-272
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• 2011

Highly luminescent and monodisperse InP quantum dots (QDs) were prepared by a non-organometallic approach in a non-coordinating solvent. Fatty acids with well-defined chain lengths as the ligand, a non coordinating solvent, and a thorough degassing process are all important factors for the formation of high quality InP QDs. By varying the molar concentration of indium to ligand, QDs of different size were prepared and their absorption and emission behaviors studied. By spin-coating a colloidal solution of InP QD onto a silicon wafer, InP QD thin films were obtained. The thickness of the thin films cured at 60 and $200^{\circ}C$ were nearly identical (approximately 860 nm), whereas at $300^{\circ}C$, the thickness of the thin film was found to be 760 nm. Different contrast regions (A, B, C) were observed in the TEM images, which were found to be unreacted precursors, InP QDs, and indium-rich phases, respectively, through EDX analysis. The optical properties of the thin films were measured at three different curing temperatures (60, 200, $300^{\circ}C$), which showed a blue shift with an increase in temperature. It was proposed that this blue shift may be due to a decrease in the core diameter of the InP QD by oxidation, as confirmed by the XPS studies. Oxidation also passivates the QD surface by reducing the amount of P dangling bonds, thereby increasing luminescence intensity. The dielectric properties of the thin films were also investigated by capacitance-voltage (C-V) measurements in a metal-insulator-semiconductor (MIS) device. At 60 and $300^{\circ}C$, negative flat band shifts (${\Delta}V_{fb}$) were observed, which were explained by the presence of P dangling bonds on the InP QD surface. At $300^{\circ}C$, clockwise hysteresis was observed due to trapping and detrapping of positive charges on the thin film, which was explained by proposing the existence of deep energy levels due to the indium-rich phases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.477-477
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• 2008

For more than three decades, the gate dielectrics in CMOS devices are $SiO_2$ because of its blocking properties of current in insulated gate FET channels. As the dimensions of feature size have been scaled down (width and the thickness is reduced down to 50 urn and 2 urn or less), gate leakage current is increased and reliability of $SiO_2$ is reduced. Many metal oxides such as $TiO_2$, $Ta_2O_4$, $SrTiO_3$, $Al_2O_3$, $HfO_2$ and $ZrO_2$ have been challenged for memory devices. These materials posses relatively high dielectric constant, but $HfO_2$ and $Al_2O_3$ did not provide sufficient advantages over $SiO_2$ or $Si_3N_4$ because of reaction with Si substrate. Recently, $HfO_2$ have been attracted attention because Hf forms the most stable oxide with the highest heat of formation. In addition, Hf can reduce the native oxide layer by creating $HfO_2$. However, new gate oxide candidates must satisfy a standard CMOS process. In order to fabricate high density memories with small feature size, the plasma etch process should be developed by well understanding and optimizing plasma behaviors. Therefore, it is necessary that the etch behavior of $HfO_2$ and plasma parameters are systematically investigated as functions of process parameters including gas mixing ratio, rf power, pressure and temperature to determine the mechanism of plasma induced damage. However, there is few studies on the the etch mechanism and the surface reactions in $BCl_3$ based plasma to etch $HfO_2$ thin films. In this work, the samples of $HfO_2$ were prepared on Si wafer with using atomic layer deposition. In our previous work, the maximum etch rate of $BCl_3$/Ar were obtained 20% $BCl_3$/ 80% Ar. Over 20% $BCl_3$ addition, the etch rate of $HfO_2$ decreased. The etching rate of $HfO_2$ and selectivity of $HfO_2$ to Si were investigated with using in inductively coupled plasma etching system (ICP) and $BCl_3/Cl_2$/Ar plasma. The change of volume densities of radical and atoms were monitored with using optical emission spectroscopy analysis (OES). The variations of components of etched surfaces for $HfO_2$ was investigated with using x-ray photo electron spectroscopy (XPS). In order to investigate the accumulation of etch by products during etch process, the exposed surface of $HfO_2$ in $BCl_3/Cl_2$/Ar plasma was compared with surface of as-doped $HfO_2$ and all the surfaces of samples were examined with field emission scanning electron microscopy and atomic force microscope (AFM).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.200-200
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• 2010

In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.

• Journal of Convergence for Information Technology
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• v.11 no.9
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• pp.109-114
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• 2021

Cr(VI)-quinoline compound[(C₉H₇NH)₂Cr₂O₇] was synthesized by the reaction between of quinoline and chromium(VI) trioxide, and structure was FT-IR, elemental analysis. The oxidation ability of benzyl alcohol greatly depends upon the dielectric constant of the used organic solvent, where carbon tetrachloride was worst and N,N'-dimethylformamide was best solvent. Noticeably, in N,N'-dimethylformamide solvent, Cr(VI)-quinoline compound oxidized substituted benzyl alcohols. The Hammett reaction constant(ρ)=-0.69(303K). As a resuit, Cr(VI)-quinoline compound was found as efficicent oxidizing agent that converted benzyl alcohol, allyl alcohol, primary alcohol and secondary alcohols to the corresponding aldehydes or ketones. Cr(VI)-quinoline compound was selective oxidizing agent of benzyl alcohol, allyl alcohol and primary alcohol in the presence of secondary alcohol ones.

• Korean Chemical Engineering Research
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• v.59 no.2
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• pp.254-259
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• 2021

Optical and electrical characteristics of the fluorocarbon films deposited in a high-density C4F8 plasma under various source powers and pressures were investigated. The F/C ratio of the fluorocarbon film deposited in a high-density C4F8 plasma increased with increasing source power and decreasing pressure due to two-step deposition mechanism. The change in the F/C ratio of the film directly affected the optical and electrical characteristics of the fluorocarbon films deposited in a high-density C4F8 plasma. The refractive index of the fluorocarbon film increased with decreasing source power and increasing pressure contrary to the dependence of the film's F/C ratio on the source power and pressure. This was because the increase in the F/C ratio suppressed electronic polarization and weakened the network structures of the film. The resistivity of the fluorocarbon film showed the same behavior as its F/C ratio. In other words, the resistivity increased with increasing source power and decreasing pressure, resulting from stronger repellence of electrons at higher F/C ratios. This work offers the feasibility of the use of the fluorocarbon films deposited in a high-density C4F8 plasma as an alternative to low dielectric constant materials because the optical and electrical properties of the fluorocarbon film can be directly controlled by its F/C ratio.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.1
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• pp.1-7
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• 2021

This study investigated the structural, dielectric, ferroelectric, and strain properties of (0.98-x)Bi1/2Na1/2TiO3-0.02BiFeO3-xSrTiO3 (BNT-BF-100xST, x＝0.20, 0.22, 0.24, 0.26, and 0.28). All samples were successfully synthesized using the conventional solid-state reaction method and sintered at 1,175℃ for 2 h. The average grain size of the BNT-BF-100x ceramics decreased with increasing ST content. Furthermore, we observed that the ferroelectric- relaxor transition temperature (TF-R) decreased with increasing ST content, which eventually vanished in the BNT-BF-24ST ceramics. The results indicated that a ferroelectric to relaxor phase transition could be induced by ST modification. Consequently, a large electromechanical strain of 633 pm/V at 4 kV/mm was observed for the BNT-BF-26ST ceramics. These results imply that our materials have the competitive advantage of larger strain under lower operating field conditions compared with other BNT-based lead-free piezoelectric ceramics. We expect that BNT-BF-ST lead-free piezoelectric ceramics are promising candidates as a novel ternary BNT-based system and can find potential applications in actuators.

• Composites Research
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• v.35 no.3
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• pp.201-215
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• 2022

This paper presents the development of thin and lightweight ultra-high temperature radar-absorbing ceramic composites composed of an aluminosilicate ceramic matrix-based geopolymer reinforced ceramic fiber and sendust magnetic nanoparticles in X-band frequency range (8.2~12.4 GHz). The dielectric properties with regard to complex permittivity of ceramic/sendust-aluminosilicate composites were proportional to the size of sendust magnetic nanoparticle with high magnetic characteristic properties as flake shape and its concentrations in the target frequency range. The characteristic microstructures, element composition, phase identification, and thermal stability were examined by SEM, EDS, VSM and TGA, respectively. The fabricated total thicknesses of the proposed single slab ultra-high temperature radar absorber correspond to 1.585 mm, respectively, exhibiting their excellent EM absorption performance. The behavior of ultra-high temperature EM wave absorption properties was verified to the developed free-space measurement system linked with high temperature furnace for X-band from 25℃ to 1,000℃.

• The Journal of the Korea institute of electronic communication sciences
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• v.18 no.2
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• pp.251-258
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• 2023

In this paper, we propose DLP(Dual Linear Polarization) stack antenna for private network. The proposed antenna has general stack structure and design airgap between two substrate to obtain the maximum gain. Also, to improve cross polarization isolation, two feeding port is designed to separate for each substrate. The size of each patch antenna is 17.80 mm(W1)×16.70 mm(L1) for lower patch and 18.56 mm(W2)×18.73 mm(L2) for upper patch, which is designed on the FR-4 substrate which thickness (h) is 1.6 mm, and the dielectric constant is 4.3, and which is 40.0 mm(W)×40.0 mm(L) for total size of substrate. From the fabrication and measurement results, bandwidths of 100 MHz (4.74 to 4.84 GHz) for feeding port 1, and 150 MHz (4.67 to 4.82 GHz) for feeding port 2 are obtained on the basis of -10 dB return loss and transmission coefficient S21 is got under the -20 dB. Also, cross polarization isolation between each feeding port obtained