• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.72-75
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• 2011

In this study, $(K_{0.5}Na_{0.5})(Nb_{0.97}Sb_{0.03})O_3+0.9$ mol% $K_{5.4}Cu_{1.3}Ta_{10}O_{29}+x$ mol% $K_4CuNb_8O_{23}$ (x = 0, 0.2, 0.6, 0.8) ceramics were prepared by a conventional mixed oxide method. Their microstructure and electric properties were investigated. The secondary phase was made by virtue of $K_4CuNb_8O_{23}$ (KCN) addition in the $(K_{0.5}Na_{0.5})(Nb_{0.97}Sb_{0.03})O_3$ system ceramics. However, the sinterability of the ceramics increased with increasing $K_4CuNb_8O_{23}$ content. At the 0.6 mol% $K_4CuNb_8O_{23}$ added composition ceramics sintered at $1,060^{\circ}C$, kp and $d_{33}$ showed the optimum values of 0.39 and 145 pC/N, respectively, suitable for piezoelectric actuator application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.6
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• pp.394-398
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• 2014

We fabricated the electrolyte-dielectric-metal (EDM) sensor on the base of AAO (anodic aluminum oxide) template with variation of the anodizing temperature. When a surface is immersed or created in an aqueous solution, a discontinuity is formed at the interface where such physicochemical variables as electrical potential and electrolyte concentration change significantly from the aqueous phase to another phase. Because of the different chemical potentials between the two phases, charge separation often occurs at the interfacial region [1]. This interfacial region, togeter with the charged surface, is usually known as the electrical double layer (EDL) [2]. The structural and electrochemical properties of AAO sensor were investigated for applications in capacitive pH sensors. To change the thickness of the AAO template, the anodizing temperature was varied from $5^{\circ}C$ to $20^{\circ}C$, the thickness of the AAO template invreased from 300 nm to 477 nm. The pH sensitivity of sensors with the anodizing temperature of $20^{\circ}C$ showed the highest value of 56.4 mV/pH in the pH range of 3 to 11. The EDM sensor with the anodizing temperature of $20^{\circ}C$ exhibited the best long-term stability of 0.037 mV/h.

• Transactions on Electrical and Electronic Materials
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• v.14 no.4
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• pp.193-198
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• 2013

The effects of additives (Cr, Nb, Dy, and Bi) on microstructure, electrical properties, dielectric characteristics, and aging behavior of $ZnO-V_2O_5-MnO_2-Co_3O_4-La_2O_3$ (ZVMCL) ceramics were systematically investigated. The phase formed in common for all ZVMCL ceramics modified with various additives consisted of ZnO grain as a main phase, and $Zn_3(VO_4)_2$ and $ZnV_2O_4$ as the secondary phases. The sintered density and average grain size were in the range of $5.4-5.54g/cm^3$ and $3.7-5.1{\mu}m$, respectively. The ZVMCL ceramics modified with Cr exhibited the highest breakdown field (6,386 V/cm) and the ZVMCL ceramics modified with Nb exhibited the lowest breakdown field (3,517 V/cm). All additives enhanced the nonlinear coefficient (${\alpha}$), by a small or large margin, in particular, additives such as Bi and Nb noticeably increased the nonlinear coefficient, with ${\alpha}=25.5$ and ${\alpha}=23$, respectively. However, on the whole, all additives did not improve the stability against a DC stress, compared with ZVMCL ceramics.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.4
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• pp.54-60
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• 2008

It is impossible to database(DB) the patterns of power cable events and cause analysis of faulted cable because the product liability(PL) law have been enforced in Korea, since 2002. In additions, simulation and pattern of power cable events are needed for DB system under accelerated deterioration. In this paper, we tested for resistance to cracking of cable below the 22.9[kV] class due to thermal stresses. This method of exam is following IEC 60811-3-1(Common test methods for insulating and sheathing materials of electric cables). From the results, The 22.9[kV] class A power cable was discolored on the surface and significantly reduced in the longitudinal direction. As the thermal weight properties of A power cable was definitely varied, we are able to guess the problem of manufacture. If the cable was defect by the manufacture, the victims would be able to claim for damage in the PL system.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.6
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• pp.1266-1272
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• 2012

An InGaZnO thin film transistor with different gate lengths and widths have been fabricated and their device degradations with device sizes have been also performed after negative gate bias stress. The threshold voltage and subthreshold swing have been decreased with decrease of gate length. However, the threshold voltages were increased with the decrease of gate lengths. The transfer curves were negatively shifted after negative gate stress and the threshold voltage was decreased. However, the subthreshold swing was not changed after negative gate stress. This is due to the hole trapping in the gate dielectric materials. The decreases of the threshold voltage variation with the decrease of gate length and the increase of gate width were believed due to the less hole injection into gate dielectrics after a negative gate stress.

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.316-318
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• 2003

본 연구에서는 전기적 특성, 기계적 특성, 내수성 및 내유성이 우수한 고분자 화합물로 산업용, 콘덴서절연재료용, 의료센서용 등 각종 절연재료 및 유전재료로 활용되어 지고 있는 변환기용 PET박막에 광자선을 10[Gy] 15[MeV], 30[Gy] 15[MeV], 50[Gy] 15[MeV]를 조사하여 물성분석 및 전기적 특성중 유전정접 특성에 관하여 검토하였다. 물성분석으로 X-선 회절(XRD) 분석 결과 조사량에 따라 피크의 크기가 커지므로 결정성이 더욱 좁아짐을 알수 있었으며 적외선 분광(FTIR) 측정결과로 파수 1752[$cm^{-1}$]에서는 C=O기의 신축운동 기여로 피크가 나타나며 파수 1266[$cm^{-1}$]에서 =C-O기의 신축운동기여와 그리고 1019[$cm^{-1}$]에서는 벤젠환의 진동기여로 흡수 피크가 나타남을 알 수 있었고, 전자현미경을 이용하여 800배로 확대한 시료의 파단면을 조사한 결과 결정질과 비정질 영역이 혼재하고 있는 것을 확인하였다. 유전정접 특성으로는 측정온도범위 상온에서 130[$^{\circ}C$]와 인가전압 범위 1[V]에서 20[V]를 변화시켜 각각의 조사량에 대한 PET 박막의 유전특성의 온도의존성 및 주파수 의존성에 대하여 실험한 결과 변환기 재료의 가능성을 조사하였다.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.322-326
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• 2011

Etch process of silicon dioxide layer by using capacitively coupled plasma (CCP) is currently being used to manufacture semiconductor devices with nano-scale feature size below 50 nm. In typical CCP plasma etcher system, plasmas are generated by applying the RF power on upper electrode and ion bombardment energy is controlled by applying RF power to the bottom electrode with the Si wafer. In this case, however, etch results often drift due to heating of the electrode during etching process. Therefore, controlling the temperature of the upper electrode is required to obtain improvement of etch repeatability. In this work, we report repeatability improvement during the silicon dioxide etching under extreme process conditions with very high RF power and close gap between upper and bottom electrodes. Under this severe etch condition, it is difficult to obtain reproducible oxide etch results due to drifts in etch rate, critical dimension, profile, and selectivity caused by unexpected problems in the upper electrode. It was found that reproducible etch results of silicon dioxide layer could be obtained by controlling temperature of the upper electrode. Methods of controlling the upper electrode and the correlation with etch repeatability will be discussed in detail.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.311-311
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• 2013

The resistance switching memory devices have several advantages to take breakthrough for the limitation of operation speed, retention, and device scale. Especially, the metal-oxide materials such as ZnO are able to fabricate on the flexible and visible transparent plastic substrate. Also, the quantum dots (QDs) embedded in dielectric layer could be improve the ratio between the low and the high resistance becauseof their Coulomb blockade, carrier trap and induced filament path formation. In this study, we irradiated 0.2-MeV-electron beam on the ZnO/QDs/ZnO structure to control the defect and oxygen vacancy of ZnO layer. The metal-oxide QDs embedded in ZnO layer on Pt/glass substrate were fabricated for a memory device and evaluated electrical properties after 0.2-MeV-electron beam irradiations. To formation bottom electrode, the Pt layer (200 nm) was deposited on the glass substrate by direct current sputter. The ZnO layer (100 nm) was deposited by ultra-high vacuum radio frequency sputter at base pressure $1{\times}10^{-10}$ Torr. And then, the metal-oxide QDs on the ZnO layer were created by thermal annealing. Finally, the ZnO layer (100 nm) also was deposited by ultra-high vacuum sputter. Before the formation top electrode, 0.2 MeV liner accelerated electron beams with flux of $1{\times}10^{13}$ and $10^{14}$ electrons/$cm^2$ were irradiated. We will discuss the electrical properties and the physical relationships among the irradiation condition, the dislocation density and mechanism of resistive switching in the hybrid memory device.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.33 no.11
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• pp.24-32
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• 2005

The object of this study is to design radar absorbing structures(RAS) with load-bearing ability in X-band. Glass/Epoxy plain-weave composites of excellent specific stiffness and strength, containing multi-walled carbon nanotubes(MWNT) added to induce dielectric loss were fabricated. The observation of microstructure and the permittivity of the composites confirmed that the materials are suitable to be used for radar absorbing material. Genetic algorithm and theory for reflection/transmission of electromagnetic waves in a multi-layered RAS were applied to conduct an optimal design of a RAS composed of the developed composites. We observed that the thickness per ply changes with the number of ply and MWNT contents. The fabrication process was proposed considering the problem and applied to fabricate a designed RAS and the theoretical and measured reflection loss of the RAS were also found in good agreement.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.2
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• pp.75-80
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• 2006

In this paper, to detect and observation the void discharges pulse signal, AE signals and tree growth characteristics in case the high voltage is applied to a XLPE sample for a power cable. We also examined the partial discharge current pulse and AE signals with the increase of the applied voltage in XLPE insulation. The experimental results show that a branch-type tree grows in the presence of the voids, and a bush-type tree grows in the absence of the voids in both samples. A rate of tree growth increases abruptly in proportional to the deterioration time in the presence of the of the voids, but in the absence of the voids, a rate of tree growth decreases as time goes by and finally a breakdown occurs. The frequency band of AE signals that are generated from the partial discharges in a XLPE sample, one of solid dielectric materials, is about 1.0[MHz].