• Title/Summary/Keyword: Dielectric loss factor

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A study on the dielectric properties by measurement of relaxation time of dipole polarization in solid dielectrics (고체유전체의 쌍극자분극 완화시간 측정에 의한 유전특성의 연구)

  • 박중순;서장수;김병인;국상훈
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1992.05a
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    • pp.125-129
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    • 1992
  • When relaxation time will be distributed, TSC observed in the experimental procedure was analysed by using a potential model having two equilibrium positions and equations of dielectric properties was derived. Calculation of distribution was made by matrix method and compared/confirmed values obtained by TSC and alternating current which have a correspondence with each other. In this measurement, distribution of activation energy and relaxation time was determined by TSC peak at around 147k/364 of which center is 10$\^$-4/ sec/10$\^$5/ sec respectively at room temperature and also obtained dielctric loss factor at the range of 10$\^$-7/-10$\^$5/Hz. It seems that low temperature peak is local dispersion and high temperature peak have a relation to dielectric transition of the material.

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Piezoelectric and Dielectric Characteristics of Low Loss Low Temperature Sintering PMN-PNN-PZT Ceramics with the amount of PNN Substitution (PNN 치환량에 따른 저손실 저온소결 PMN-PNN-PZT 세라믹스의 압전 및 유전특성)

  • Yoo, Ju-Hyun;Kim, Kook-Jin;Jeong, Yeong-Ho;Lee, Su-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.9
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    • pp.766-770
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    • 2007
  • In this study, in order to develop low temperature sintering ceramics for multilayer piezoelectric actuator, $0.07Pb(Mn_{1/3}Nb_{2/3})O_3-xPb(Ni_{1/3}Nb_{2/3})O_3-(0.93-x)Pb(Zr,Ti)O_3$ ceramics system were fabricated using $Li_2CO_3-Bi_2O_3-CuO$ sintering aids and the specimens were sintered at $930^{\circ}C$. Thereafter, their piezoelectric and dielectric characteristics were investigated according to the amount of PNN substitution. At 9 mol% PNN substitution, density, electromechanical coupling factor ($k_p$), dielectric constant, mechanical quality factor ($Q_m$) and piezoelectric constant ($d_{33}$) showed the optimum value of $7.86g/cm^3$, 0.60, 1640, 1323 and 387 pC/N, respectively. It is considered that these values are suitable for piezoelectric divece application such ad multilayer piezoelectric actuator and ultrasonic vibrator with pure Ag internal electrode.

Dielectric properties of 70/30 mol% P(VDF-TrFE) copolymer thin films with freqeuncy (70/30 mol% P(VDF-TrFE) 공중합체 박막의 주팍수에 따른 유전특성)

  • 윤종현;정무영;박수홍;임응춘;이상희;박상현;이덕출
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.470-473
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    • 2001
  • In this study, 70/30 mol% P(VDF-TrFE) copolymer thin films were prepared by physical vapor deposition, and dielectric properties with frequency were investigated. From results of TA(Thermal Analysis), the Curie transition temperature and melting temperature were observed at 118.8$^{\circ}C$ and 146$^{\circ}C$, respectively. Therefore, while thin films were prepared, the substrate temperature was varied from 30$^{\circ}C$ to 90$^{\circ}C$. The dielectric constant decreased with increasing frequency. At measuring frequency of 1kHz, the relative dielectric constant increased from 3.643 to 23.998 with increasing substrate temperature from 30$^{\circ}C$ to 90$^{\circ}C$. As a result of dielectric loss factor, ${\alpha}$-relaxation and ${\beta}$-relaxation were observed near at 100Hz and 1MHz, respectively. And the magnitude of ${\alpha}$-relaxation decreased and that of ${\beta}$-relaxation increased with increasing substrate temperature.

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Dielectric and Structural of BST Thin Films with Cr doped prepared by Sol-gel method for Tunable application (Tunable 소자 응용을 위한 Sol-gel 법으로 제작된 BST 박막의 Cr 첨가에 따른 구조적, 유전적 특성)

  • Kim, Seung-Bum;Kim, Kyoung-Tae;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.623-626
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    • 2004
  • [ $Ba_{0.6}Sr_{0.4}TiO_3$ ] (BST) dielectric thin films doped by Cr were prepared using an alkoxide-based sol-gel method on the Pt/Ti/SiO2/Si substrate. Atomic force microscopy and x-ray diffraction analysis showed that increasing the Cr doping ratio causes increased grain size while the surface remains smooth and crack-free. It was also found that compared with undoped films the increase of Cr content in BST improves the dielectric constant and the leakage-current characteristics. The figure of merit reached the maximum value of 72.3 at the 5 mol % of Cr doping. This composition showed the dielectric constant of 426, the loss factor of 0.0065, tenability of 47.7%, and leakage-current density (at the electric field of 100 kV/cm) of $5.31{\times}10^{-8}A/cm^2$. The results show that the Cr-doped BST thin films are prospective candidates for applications in tunable devices.

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Dielectric Relaxation in Ethylene Glycol - Dimethyl Sulfoxide Mixtures as a Function of Composition and Temperature

  • Undre, P.B.;Khirade, P.W.;Rajenimbalkar, V.S.;Helambe, S.N.;Mehrotra, S.C.
    • Journal of the Korean Chemical Society
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    • v.56 no.4
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    • pp.416-423
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    • 2012
  • Using time domain reflectometry, the complex dielectric spectra between 10 MHz to 20 GHz has been measured in the whole composition range at 10, 20, 30 and $40^{\circ}C$ for the binary mixtures of ethylene glycol and dimethyl sulfoxide. For all the mixtures, only one dielectric loss peak was observed in this frequency range. The relaxation in these mixtures can be described by a single relaxation time using the Debye model. A systematic variation is observed in dielectric constant (${\varepsilon}_0$) and relaxation time (${\tau}$). The excess permittivity (${\varepsilon}^E$), excess inverse relaxation time $(1/{\tau})^E$, Kirkwood correlation factor (g) and thermodynamic parameters viz. enthalpy of activation (${\Delta}H$) and Gibbs free energy of activation (${\Delta}G$) have been determined, to confirm the formation of hydrogen bonded homogeneous and heterogeneous cooperative domains, the dynamics of solute - solute interaction and the hindrance to molecular rotation in the hydrogen bonded glass forming ethylene glycol - dimethyl sulphoxide system.

Piezoelectric and Dielectric Properties of Low Temperature Sintering Pb(Zn1/2W1/2)O3-Pb(Mn1/2Nb2/3)O3-Pb(Zr0.48Ti0.52)O3 Ceramics Manufactured by Post-annealing Method (Post-annealing 방법으로 제작된 저온소결 Pb(Zn1/2W1/2)O3-Pb(Mn1/2Nb2/3)O3-Pb(Zr0.48Ti0.52)O3 세라믹의 압전 및 유전특성)

  • Yoo, Ju-Hyun;Lee, Kab-Soo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.3
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    • pp.227-231
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    • 2008
  • In this study, in order to improve the electrical properties of low temperature sintering piezoelectric ceramics, $[0.05Pb(Zn_{1/2}W_{1/2})-0.07Pb(Mn_{1/3}Nb_{2/3})-0.088Pb(Zr_{0.48}Ti_{0.52})]O_3$(abbreviated as PZW-PMN-PZT) ceramic systems were fabricated using $Bi_2O_3$, CuO and $Li_2CO_3$ as sintering aids and then their piezoelectric and dielectric properties were investigated according to the amount of $Li_2CO_3$ and post-annealing process. Post-annealing process enhanced all physical properties except for mechanical quality factor (Qm). 0.2 wt% $Li_2CO_3$ added and post-annealed specimen showed the excellent values suitable for low loss piezoelectric actuator application as follow: the density = 7.86 $g/cm^3$ electromechanical coupling factor (kp) = 0.575, piezoelectric constant $d_{33}$ = 370 pC/N, dielectric constant ($\varepsilon_r$) = 1546, and mechanical quality factor (Qm) = 1161, respectively.

Effect of Measuring Method on the Evaluation of Piezoelectric and Dielectric Properties of PMN-PT Single Crystal (PMN-PT 단결정의 압전 및 유전 특성 평가에 미치는 측정 방법의 영향)

  • Kim, Yong Soo;Park, Jae Hwan;Lee, Jeongho;Lee, Sang Goo
    • Journal of the Microelectronics and Packaging Society
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    • v.26 no.4
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    • pp.69-74
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    • 2019
  • The influence of measuring fixtures on the measurement of dielectric and piezoelectric properties of PMN-PT single crystal specimens was investigated. As the pressure of the jig pin which applied the AC electrical signal to the sample decreased, the lower resonance resistance was measured and the higher mechanical quality factor was calculated. The mechanical quality factor was 418 when the spring tension of the jig pin was 20grf, and the value of the quality factor was reduced by half when the spring tension was 200grf. The 4-probe fixture method is unsuitable for measuring piezoelectric properties, but it was suitable for the measurement of dielectric loss. In order to accurately evaluate the piezoelectric properties of PMN-PT, it is necessary to lower the spring tension of the jig pin as much as possible.

Variation in Properties of Seawater Flooded and Non-Flooded CSPE (해수범람 전·후의 CSPE 특성변화)

  • Lee, Jeong-U;Kim, In-Yong;Ji, Seong-Hyun;Jeon, Hwang-Hyun;Shin, Yong-Deok
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.64 no.12
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    • pp.1724-1729
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    • 2015
  • Chlorosulfonated polyethylene (CSPE) was not flooded seawater and flooded seawater & freshwater for 5 days, respectively, and these samples are referred to as BSF(before seawater flooding) and ASFF(after seawater & freshwater flooding), respectively. The apparent density, dissipation factor, relative permittivity, melting temperature, dielectric breakdown time and increased time of applied voltage are higher than those of BSF, but the insulating resistance, dielectric strength, percent elongation and glass transition temperature of ASFF are lower than those of BSF. The differential temperature of those is $0.026{\sim}0.028(^{\circ}C)$ after AC and DC voltage is applied to ASFF, respectively, and the differential temperature of those is $0.013{\sim}0.037(^{\circ}C)$ after AC and DC voltage is applied to BSF, respectively. In the case AC and DC voltage is applied to ASFF as well as BSF, the variations in temperature of AC voltage are higher than those of DC voltage. It is investigated that dielectric loss due to dissipation factor ($tan{\delta}$) is related to electric dipole conduction current. It is certain that the ionic (electron or hole) leakage current was increased by conducting ions such as $Na^+$, $Cl^-$, $Mg^{2+}$, $SO_4^{2-}$, $Ca^{2+}$ and $K^+$, those are related to cured atoms of O and S that relatively increased after seawater flooding.

Estimation of Radio Frequency Electric Field Strength for Dielectric Heating of Phenol-Resorcinol-Formaldehyde Resin Used for Manufacturing Glulam (구조용 집성재 제조용 접착제(Phenol-Resorcinol-Formaldehyde Resin) 유전 가열을 위한 고주파 전기장 세기 추산)

  • Yang, Sang-Yun;Han, Yeonjung;Park, Yonggun;Eom, Chang-Deuk;Kim, Se-Jong;Kim, Kwang-Mo;Park, Moon-Jae;Yeo, Hwanmyeong
    • Journal of the Korean Wood Science and Technology
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    • v.42 no.3
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    • pp.339-345
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    • 2014
  • For enhancing productivity of glulam, high frequency (HF) curing technique was researched in this study. Heat energy is generated by electromagnetic energy dissipation when HF wave is applied to a dielectric material. Because both lamina and adhesives have dielectric property, internal heat generation would be occurred when HF wave is applied to glulam. Most room temperature setting adhesives such as phenol-resorcinol-formaldehyde (PRF) resin, which is popularly used for manufacturing glulam, can be cured more quickly as temperature of adhesives increases. In this study, dielectric properties of larch wood and PRF adhesives were experimentally evaluated, and the mechanism of HF heating, which induced the fast curing of glue layer in glulam, was theoretically analyzed. Result of our experiments showed relative loss factor of PRF resin, which leads temperature increase, was higher than that of larch wood. Also, it showed density and specific heat of PRF, which are resistance factors of temperature increase, were higher than those of wood. It was expected that the heat generation in PRF resin by HF heating would occur greater than in larch wood, because the ratio of relative loss factor to density and specific heat of PRF resin was greater than that of larch wood. Through theoretical approach with the experimental results, the relative strengths of ISM band HF electric fields to achieve a target heating rate were estimated.

Effect of the Electrode Type on the Dielectric and Piezoelectric Properties of Piezoelectric PMN-PZT Single Crystals (압전 PMN-PZT 단결정의 유전 및 압전 특성에 미치는 전극 종류의 영향)

  • Lee, Jong-Yeb;Oh, Hyun-Taek;Choi, Kyoon;Lee, Ho-Yong
    • Journal of the Korean Ceramic Society
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    • v.52 no.1
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    • pp.77-82
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    • 2015
  • The effect of the electrode type on the dielectric and piezoelectric properties of $Pb(Mg_{1/3}Nb_{2/3})O_3-PbZrO_3-PbTiO_3$ (PMN-PZT) single crystals was investigated in an effort to improve their properties for various piezoelectric applications. First, three different types of PMN-PZT single crystals [PMN-PZT-A (piezoelectrically soft type; dielectric constant ~ 10,000), PMN-PZT-B (piezoelectrically soft type; phase-transition temperature between the rhombohedral and tetragonal phases ($T_{RT}$) ~ $145^{\circ}C$), PMN-PZT-C (piezoelectrically hard type; high mechanical quality factor ($Q_m$) ~ 1,000)] were fabricated using the solid-state single crystal growth (SSCG) method. Then, four different types of electrodes [sputtered Au, sputtered Cr/Au, sputtered Ti/Au, and fired Ag] were formed on the single crystals, and their dielectric and piezoelectric properties were measured. The single crystals with a sputtered Ti/Au electrode showed the highest dielectric and piezoelectric constants but the lowest coercive electric field ($E_C$). The single crystals with a fired Ag electrode showed the lowest dielectric and piezoelectric constants but the highest coercive electric field ($E_C$). This dependence on the type of electrode was most significant in the piezoelectrically hard PMN-PZT-C single crystals. However, the effects of the electrode type on the phase transition temperatures ($T_C$, $T_{RT}$) and dielectric loss were negligible. These results clearly demonstrate that it is important to select an appropriate electrode so as to maximize the dielectric and piezoelectric properties of single crystals in each type of piezoelectric application.