• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.144-150
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• 2008

Recently, there has been growing interest in low loss and low dielectric constant material for LTCC application, as the frequency range for electronic devices increases. This study was designed to evaluate the effect of cordierite filler for low dielectric constant LTCC material. From the previous experiments, two glass compositions of B-Si-Al-Zn-Ba-Ca-O and B-Si-Al-Sr-Ca-O system, were chosen. Each powder of two glass compositions was sintered respectively with commercial cordierite powder in temperature range from $800^{\circ}C\;to\;900^{\circ}C$. Crystalline cordierite and glass peaks were affected only with two factors of composition and sintering temperature among various factors. With the optimized condition of two cordierite/glass compositions, obtained dielectric constant was below 5.5 and quality factor was above 1,000. Closed pore of sintered body was controled by sintering temperature and sintering time. When cordierite/glass composite with ratio of 5.5:4.5 was sintered at $900^{\circ}C$, densification was sufficient with good dielectric characteristics of ${\epsilon}_r<5.1,\;Q{\ge}1,000$. Residual fine closed pores could be reduced with control of sintering temperature and time. 3 point bending strength and chemical durability were evaluated to obtain feasibility for substrate material.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1177-1179
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• 1993

A study has been carried out on the characteristics of dielectric consent and the dissipation factor of Eicosamethyl Eneasiloxane as a function of frequency($30{\sim}10^5$[Hz]) and temperature(-70[$^{\circ}C$] to 65[$^{\circ}C$]). The result shows that a well-defined maxima of the absorption curves characterized by a dipole loss mechanism at a low temperature range. For temperatures in the vicinity of room temperature and higher, the loss in the range of power frequencies are predominantly of ionic nature. The increase of ionic conduction is attributed to the presence of ionizable oxidation products and their increased dissocation feature. The effect of viscosity upon the dipole loss intensity appeared to be considerably less pronounced than that upon ionic conduction loss.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.355-356
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• 2002

The dielectric permittance and the dielectric loss factor of several lubricating oils were measured at frequencies from 100 Hz to 1.5 MHz. The measurements were carried out under atmospheric pressure as a function of temperature and under fixed temperature as a function of pressure. Temperature and pressure dependence of dielectric relaxation time were investigated. The temperature dependence of relaxation time obeyed the Vogel-Fulcher-Tammann (VFT) law. We modified the VFT equation in order to express the dielectric relaxation time as a function of temperature and pressure. Furthermore. by taking into consideration the similarity of the temperature and pressure dependence between dielectric relaxation and mechanical relaxation. the prediction of high-pressure viscosity were conducted. The predicted results were compared with the viscosity data obtained from the falling-sphere type viscometer.

• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.392-399
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• 1997

In this study, the effect of the sintering temperature on the dielectric and piezoelectric properties of 0.5 wt% $MnO_{2}$-doped $0.125Pb(Mg_{1/2}Nb_{2/3})O_{3}-0.435PbTiO_{3}-0.44PbZrO_{3}$ ceramics were investigated aiming at ultrasonic motor applications. From experimental result, it was found that the optimal sintering temperature condition was at $1270^{\circ}C$. The sample sintered at $1270^{\circ}C$ had density of $7.72\;g/cm^{3}$, dielectric constant of 570, dielectric loss of 0.82%, remanent polarization of $19.18{\mu}C/cm^{2}$, coercive field of 9.63 kV/cm, electromechanical coupling factor of radial mode of 55.1%, mechanical quality factor of 886. Temperature and frequency dependence of dielectric constant and dielectric loss of the sintered sample at $1270^{\circ}C$ was also investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.257-260
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• 2003

In this study, the structural, dielectric and piezielectric properities of $xPb(Mg_{1/3}Nb_{2/3})O_3-(0.5-x)Pb(Ni_{1/3}Nb_{2/3})O_3-0.5Pb(Zr_{0.3}Ti_{0.7})O_3$ ceramics were investigated with the substitution of $PbMg_{1/3}Nb_{2/3}O_3$. The results showed that the substitution of the $PbMg_{1/3}Nb_{2/3}O_3$ was effective in increasing the dielectric constant and electromechanical coupling factor $(K_p)$. The dielectric constant, dielectric loss and Kp showed the highest values of 4293, 2.4%, 0.59 relatively, when the substitution of amount of $PbMg_{1/3}Nb_{2/3}O_3$ was 5 mol%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.117-120
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• 2004

The dielectric and piezoelectric properties of silver doped $Pb(Zr,Ti)O_3-Pb(Mn,W,Sb,Nb)O_3$ ceramics was examined. By varying the contents of silver(0.0, 0.4, 1.0 mol%), the effect of doped silver on PZT-PMWSN thin film was investigated at various sintering temperature(900, 1000, $1100^{\circ}C$). As increasing silver contents, the relative dielectric constant is increased and sinterbility is enhanced. At the specimen with 0.4 mol% Ag and sintered at $1100^{\circ}C$, electromechanical coupling factor(kp), mechanical quality factor(Qm), dielectric constant(${\varepsilon}r$) and dielectric loss were 0.502, 811, 991, 0.006, respectively. The results show that the PZT-PMWSN/Ag composites have enhanced piezoelectic and dielectric properties and processing condition is improved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.80-84
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• 1993

In this research, we studied the variation of the dielectric loss absorption of the dielectric loss absorption of the sample according with the change to $\^$60/Co-${\gamma}$-ray irradiation dose of the influence of temperature and applied voltage. In order to investigate the effect of irradiation oriented polypropylene film, we have observed dissipation factor within the temperature range of 30∼130 [$^{\circ}C$] and voltage range of 100∼250$^{\circ}C$ [V]. As for the dependency of temperature by dissipation factor, the ${\alpha}$-peak which appears at high temperature increases accordingly to the increasement of irradiation dose which is contributed by the crystal region and moves towards the high temperature. The ${\beta}$-peak which appears at low temperature is origined from dipoles and molecular motions in the amorphous region. As for the dependency of voltage by tan$\delta$, at low temperature the peak of the tan$\delta$, at low temperature the peak of the tan$\delta$ shifts accordingly to the increasement of irradiation dose towards the high temperature region.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1417-1419
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• 1997

In this paper, the dielectric properties is made researches by the dose of electron beam in order to investigate the electrical properties for transformer oils due to electron beam irradiation. To measure the dielectric loss of irradiated specimen, the liquid electrode of coaxial cylindrical shape is used, and its geometric capacitance is 16 [pF]. And the dielectric dissipation factor, $tan{\delta}$, is measured by using the Video Bridge 2150. The thermal static oven with an automatic temperature controller is used so as to apply specific temperature to specimen. This experiments for measuring the dielectric loss is performed at $20{\sim}120[^{\circ}C]$ in temperature range, $30{\sim}1.5{\times}10^5[Hz]$ in frequency and $300{\sim}500[mV]$ in voltage.

• Journal of the Korean Ceramic Society
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• v.32 no.9
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• pp.1056-1064
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• 1995

95Pb(Mg1/3Nb2/3)O3-5PbTiO3 (hereinafter designated as 95PMN-5PT) system was prepared by the columbite-precursor method with 2 mol% excess PbO to compensate the PbO loss during thermal process. The amount of CuO was 1~10 mol%, and the effects of CuO addition on the dielectric properties of this system have been investigated. From the microstructures, XRD analysis and dielectric measurements, the solubility limit of CuO in 95PMN-5PT was found to be around 3 mol%. Lattice parameter and Curie temperature were found to be decreased as the amount of CuO increased up to the solubility limit. This result confirmed that the Cu2+-ions substituted the Pb2+-ions. It was revealed that the addition of CuO on 95PMN-5PT promoted the sinterability and properties. The room temperature dielectric constant, the loss factor and the specific resistivity of the specimens processed with optimum conditions were 23000, 1%, and 8$\times$1011Ω.cm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.309-313
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• 1997

(Ba$_{x}$Sr$_{l-x}$)TiO$_3$(BST) thin fi1ms with various Ba/Sr ratios were deposited on Pt(80nm)/SiO$_2$(100nm)/Si by RF magnetron sputtering. BST thin films which have x=0.6, 0.5, 0.4 were studied dielectric properties with temperature variation. The frequency was used from 100Hz to 1MHz for measuring dielectric constant. The measurement conditions of dielectric constant with Temperature Variation were 1KHz and 2$0^{\circ}C$. As a result, the dielectric constant of BST thin film was about 425 and loss factor was 0.013. Also, with increasing Temperature, the dielectric constants of BST thin films were gradually decreased.sed.