• Applied Science and Convergence Technology
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• 제24권6호
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• pp.224-227
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• 2015

Ferroelectric $Pb_2(Sc,Nb)O_6$ were prepared under two different sintering conditions using the oxide mixing method and the electrical properties were measured. The sintering conditions were $1350^{\circ}C$ for 25 minutes and $1400^{\circ}C$ for 20 minutes. EDX spectroscopy and XRD were used to determine the crystalline characteristic of the $Pb_2(Sc,Nb)O_6$ compositions Pyrochlore phase showed about 2% in all $Pb_2(Sc,Nb)O_6$ specimens. It expands the growth of crystals in samples sintered at $1400^{\circ}C$ than $1350^{\circ}C$, but all samples were the optimal crystallization. The temperature and frequency dependence of the complex dielectric constant and admittance were measured to analyze the electrical properties. The high dielectric constant of the specimens reflects the good stoichiometry and crystallization. The maximum value of the dielectric constant in the two specimens treated with sintering at $1350^{\circ}C$ and $1400^{\circ}C$ were more than 27,000, and the dielectric loss at room temperature is smaller than 0.05. The maximum dielectric constant decreased with increasing frequency, the transition temperature also increased in $Pb_2(Sc,Nb)O_6$ compositions. The admittance and susceptance values reach a peak at all temperatures, and the magnitude of the peak increases with increasing measuring temperature. Strong frequency dependent of maximum admittance, susceptance, dielectric constant and dielectric loss were observed.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2005년도 종합학술발표회 논문집 Vol.15 No.1
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• pp.323-328
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• 2005

The paper describes a meander antenna using magneto-dielectric composite for 433.92 MHz band. The antenna with magneto-dielectric material in this paper is suggested for miniaturization of antenna size. The return loss of meander antenna is achieved by optimizing the permittivity, $\varepsilon_r$=1.71-j0.004 and permeability, $\mu_r$=2.39+j2.58. Over all dimension of the antenna is $51\times11\times1.6mm$. The return loss and gain are -41 dB, -5dBi, respectively at 433.92 MHz.

• 한국안전학회지
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• 제6권4호
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• pp.5-12
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• 1991

The dielectric properties of natural rubbers for electric safety are very important to investigate the molecular structure. The electric safety characteristics of the dielectric absorption in aging vulcanized natural rubber were studied in the range of frequency from 1$\times$10$^3$［Hz］to 3.2$\times$10$^3$［Hz］l at the temperature of 23［$^{\circ}C$］. As the results, it has been confirmed that in the case of aging natural rubber of above 2 phr the specimens exhibit two kinds of dielectric losses due to the dipole polarization by impurities and sulfurs, and of raw rubber exhibit the kind of losses due to the dipole polarization. Rurthermore, dielectric loss maximum tansspectrum in high freguency region for electric safety, which removed to the low freguency according to increasing sulfur, depends greatly on sulfur.

• 대한전기학회논문지
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• 제33권3호
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• pp.112-117
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• 1984

The dielectric propertries of polymers are very important to investigate the molecular structure of polymer. The characteristrics of the dielectric absorption in vulcanized natural rubber were studied in the range of frequency from 10[KHz] to 32[MHz] at the temperature of 25[$^{\circ}C$]. As the results. it has been confirmed that in the case of natural ruber vulcanized between 2 and 4phr the specimens exhibit two kind of dielectric losses due to the dipole polarization by impurites and sulfure, and of above 7phr was only a loss due to the dipole polarization by sulfure and of natural rubber exhibit two kind of losses due to the interfacial and the dipole polarization. Furthermore, dielectric loss maximun tan spectrum, which removed to the low frequency according to increasing sulfure, depends greatly on sulfure. The volume resistivity of $10^{7}$~$10^{11}$[$\Omega\cdot$cm], regardness whether the crosslinking of rubber are tired by sulfure or, was observed.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권10호
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• pp.436-440
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• 2003

The (S $r_{0.85}$C $a_{0.15}$)Ti $O_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/ $SiO_2$/Si) using RF sputtering method according to the deposition condition. The optimum conditions of RF power and Ar/ $O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[$\AA$/min] at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The capacitance characteristics had a stable value within $\pm$4[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films were observed above 200[kHz]. SCT thin films used in this study showed the phenomena of dielectric relaxation with the increase of frequency.ncy.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 추계학술대회 논문집 학회본부
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• pp.218-220
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• 1996

This paper was evaluated dielectric characteristics and temperature dependency in the XLPE with and without void. Each dielectric loss was $3.5{\times}10^{-4}$(%) and a little decreased with temperature's increase. Capacitance presented a contant value. According as the study is obtained results, loss in the XLPE increased in proportion to square of applied voltage. As a result of the study, it was knowed that dielectric characteristics had a great deal to do with degradation in the high voltage dielectric materials.

• 한국전기전자재료학회논문지
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• 제25권11호
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• pp.926-929
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• 2012

The $Sr_{0.7}Bi-{2.3}Nb_2O_9$(SBNO) thin films were deposited on Si substrate by RF magnetron sputtering method at $300^{\circ}C$ of substrate temperature. And the SBNO thin films were annealed at $650{\sim}800^{\circ}C$ using RTA (rapid thermal annealing). The grain of SBNO thin films were increased with the increase of annealing temperature. The dielectric constant (100) of SBNO thin film was obtained by RTA above $750^{\circ}C$. The voltage dependence of dielectric loss showed a value within 0.03 in voltage ranges of -5~+5 V. Also, the dielectric constant characteristics showed a stable value with the increase of frequency.

• 한국전기전자재료학회논문지
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• 제25권11호
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• pp.916-921
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• 2012

This research measured the dielectric properties of silicone rubber with various hardness in 100 Hz~3 MHz, $30{\sim}170^{\circ}C$ conditions. When the hardness increases from 65 degree to 75 degree, the dielectric loss increased within frequency range of 100 kHz~3 MHz and was a little change in dielectric loss within temperature range of $90^{\circ}C{\sim}170^{\circ}C$. Thermogravimetric Analysis (TGA) showed the weight change rate increased a little while heated until $800^{\circ}C$. Scanning Electron Microscope (SEM) measurement showed that Aluminium Trihydroxide($AlOH_3$) which acts as a reinforcement agent reduced the size of the particles as the hardness increased.

• 대한전자공학회논문지SD
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• 제41권8호
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• pp.37-44
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• 2004

본 논문에서는 RF 부품 수동소자 중 가장 기본적인 요소가 되는 전송선로를 DAML(Dtelectric-supported Airbridge Microstrip Line) 형태의 새로운 구조로 제안하였으며, DAMS(Micro Electro Mechanical System) 기술 중 표면 마이크로머싱닝(surface micromachining) 기법을 이용하여 구현하였다. 제안된 구조는 마이크로스트립 라인(microstrip line)의 응용 형태로서 기존의 신호선(signal line)과 ground 사이에 유전체 지지대(dielectric post)를 사용하였고, 신호선을 공중으로 띄우면서 넓은 범위의 임피던스에서 유전체 손실(dielectric loss)을 최소화하였다. 본 논문에서 제작된 전송선로는 10 ㎛의 신호선의 높이와 10 ㎛ × 10 ㎛의 지지대(Post) 면적과 9 ㎛의 지지대(post)의 높이와 5 mm의 길이로 제작되었다. 50 GHz에서 일반적인 마이크로스티립(microstrip) 전송선의 손실이 약 7.5 dB/cm 이상 되는 것과 비교하여 본 논문에서 제안한 구조에서는 50 GHz에서 전송선의 손실이 약 1.1 dB/cm가 되는 것을 얻었다.

• 한국전자파학회논문지
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• 제19권11호
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• pp.1265-1271
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• 2008

본 논문에서는 FR4와 같은 저가의 고손실 기판을 이용하여 금속 부착형 태그 안테나를 설계하는 새로운 방법을 제안한다. 제안한 설계 방법은 유전 손실(dielectric loss)에 따른 기판 손실(substrate loss)을 크게 감소시킴으로써, 태그 안테나의 복사 효율(radiation efficiency)을 기존의 평면 역 F 안테나(planar inverted-F antenna: PIFA)에 비하여 2배 이상 향상시킨다. 본 논문에서는 제안한 방법에 따른 안테나의 등가 회로 모델을 정립하고 이를 체계적으로 분석하였으며, 시제품을 제작 및 측정하여 제안한 방법의 우수성을 입증하였다.