• 전자공학회논문지
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• 제54권5호
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• pp.128-132
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• 2017

본 논문에서는 비유전율 38을 갖는 유전체 공진기를 이용하여 S-Band 내 대역폭 20MHz를 갖는 대역통과 필터를 설계 및 제작하였다. 제작에 사용한 유전체 공진기는 $TE_{01{\delta}}$ 모드로 동작하며 중심이 관통된 링형이다. 대역통과 필터는 여섯 개의 유전체 공진기를 이용하여 6-Pole로 구성하였으며 비인접 결합을 통해 타원함수 응답을 구현하였다. 대역통과 필터는 대역폭 내에서 평균 0.97dB의 삽입손실과 25dB 이상의 반사손실을 나타내었다. 비인접 공진기 간의 결합특성으로 체비세프 응답 대역통과 필터에 비해 주파수 선택도를 더욱 향상시킬 수 있었다.

• 전자공학회논문지A
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• 제32A권3호
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• pp.471-481
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• 1995

Measurement factors for the dielectric properties of low dielectric loss materials (tan${\dalta}{\le}10^{-4}$) were investigated using the dielectric rod resonator method. It was shown that the relative conductivity (${\sigma}_{r}$) should be controlled within a 5% to obtain the standard deviations of less than 0.07 for permittivity .epsilon.r and 0.06${\times}10^{-4}$ for tan.delta.respectively. Surface resistivity (R$_s$) could be reduced when the surface roughness of parallelled conducting plate was less than 0.07 .mu.m. Measurement error for the permittivity was $\pm$0.02% independent of probe loop size, whereas the error in Q value was reduced with the decrease in probe loop size and also with the increase in the absolute values of Q. Reliable Q values were determined with the probe loop size of less than 4mm. The accurate for the distance between the measuring probe loop and the sample could be obtained when the insertion loss of resonant frequency ranged -15dB - -30dB.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1250-1251
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• 2008

In this study, the dielectric ceramics with low loss were investigated for high frequency application. All sample of the $Ba_5M_4O_{15}$ (M=Ta, Nb) ceramics were prepared by the conventional mixed oxide method and sintered at $1325{\sim}1575^{\circ}C$. The bulk density and dielectric constant of the $Ba_5Ta_4O_{15}$ ceramics were increased continuously with increasing of sintering temperature. The quality factor was increased in the sintering temperature of $1375{\sim}1475^{\circ}C$ but decreased at the temperature above 1475$^{\circ}C$. In the case of $Ba_5Nb_4O_{15}$ ceramics, the bulk density, dielectric constant and quality factor were increased with sintering temperature but decreased above temperature of 1400$^{\circ}C$. The dielectric constant, quality factor and temperature coefficient of the resonant frequency (TCRF) of the $Ba_5Ta_4O_{15}$ and $Ba_5Nb_4O_{15}$ ceramics, sintered at 1475$^{\circ}C$ and 1400$^{\circ}C$, were 25.15, 53105 GHz, -3.06 ppm/$^{\circ}C$ and 39.55, 28052 GHz, 5.7 ppm/$^{\circ}C$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.31-34
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• 2003

($Ba_{0.6-x}Sr_{0.4}Ca_x)TiO_3$ (BSCT) (x=0.10, 0.15, 0.20) powder, prepared by the sol-gel method, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen-printing techniques on alumina substrates using the BSCT paste. The structural and the electrical properties were investigated for various composition ratio and sintering temperature. BSCT thick film thickness, obtained by four printings, was approximately 110 ~ 120 ${\mu}m$. The Curie temperature and dielectric constant at room temperature were decreased with increasing Ca content. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) specimen, which was sintered at $1420^{\circ}C$ and measured at 1MHz, were about 910, 0.46% and 9.28% at 5kV/cm, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1417-1419
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• 1997

In this paper, the dielectric properties is made researches by the dose of electron beam in order to investigate the electrical properties for transformer oils due to electron beam irradiation. To measure the dielectric loss of irradiated specimen, the liquid electrode of coaxial cylindrical shape is used, and its geometric capacitance is 16 [pF]. And the dielectric dissipation factor, $tan{\delta}$, is measured by using the Video Bridge 2150. The thermal static oven with an automatic temperature controller is used so as to apply specific temperature to specimen. This experiments for measuring the dielectric loss is performed at $20{\sim}120[^{\circ}C]$ in temperature range, $30{\sim}1.5{\times}10^5[Hz]$ in frequency and $300{\sim}500[mV]$ in voltage.

• 한국세라믹학회지
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• 제32권9호
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• pp.1056-1064
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• 1995

95Pb(Mg1/3Nb2/3)O3-5PbTiO3 (hereinafter designated as 95PMN-5PT) system was prepared by the columbite-precursor method with 2 mol% excess PbO to compensate the PbO loss during thermal process. The amount of CuO was 1~10 mol%, and the effects of CuO addition on the dielectric properties of this system have been investigated. From the microstructures, XRD analysis and dielectric measurements, the solubility limit of CuO in 95PMN-5PT was found to be around 3 mol%. Lattice parameter and Curie temperature were found to be decreased as the amount of CuO increased up to the solubility limit. This result confirmed that the Cu2+-ions substituted the Pb2+-ions. It was revealed that the addition of CuO on 95PMN-5PT promoted the sinterability and properties. The room temperature dielectric constant, the loss factor and the specific resistivity of the specimens processed with optimum conditions were 23000, 1%, and 8$\times$1011Ω.cm, respectively.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.985-986
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• 2006

The epitaxial $KTa_{0.524}Nb_{0.446}Ti_{0.03}O_3$ films with 3% Ti were investigated. Titanium (+4) substitution on the Nb/Ta site should reduce dielectric losses of KTN: Ti film by introducing an acceptor state. This acceptor state traps electrons due to oxygen vacancies that form during oxide film growth. KTN:Ti films were grown using pulsed laser deposition, and then annealed at different temperatures in oxygen ambient. The crystallinity, and surface morphology of KTN:Ti film were investigated using x-ray diffraction, and atomic force microscopy. The dielectric properties of Ti doped KTN films measured for unannealed and annealed films will be reported. Tunability and dielectric loss of as-deposited KTN:Ti film were determined to be 10% and 0.0134, respectively. For films annealed at $800^{\circ}C$ and $900^{\circ}C$, the dielectric loss decreased but with a decrease in tunability as well.

• Elastomers and Composites
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• 제18권2호
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• pp.51-59
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• 1983

고분자물질의 유전특성은 고분자의 분자구조를 연구하는데 대단히 중요하다. 황가황에 의한 천연고무의 유전흡수특성을 25[$^{\circ}C$]의 온도에서 주파수영역 10[KHz]부터 32[KHz] 사이에서 연구하였는데, 결과로서 황 4phr 이하의 가황 천연고무에서는 계면분극과 쌍극자 분극에 의한 두종류의 유전손실이 나타났고 황 7phr 이상의 가황 천연고무에서는 쌍극자분극에 의한 손실만이 존재함을 확인하였다. 더욱이 황의 증가로 저주파수쪽으로 이동되는 유전 손실스펙트럼의 최대치 $tan{\delta}$는 황에 의해 변화되며 체적고유저항은 황의 첨가와는 무관하였고 그 크기는 $10^{7}{\sim}10^{11}[{\Omega}{\cdot}cm}]$이였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.357-360
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• 2000

Ferroelectric 0.05PZN-xPZT(90/10)-(0.95-x)PZT(10/90) (x=0.65, 0.85) specimens were fabricated by the mixed-oxide method and cold-pressing method using sol-gel derived PZT(90/10) and PZT(10/90) powders. All specimens show a uniform ferroelectric grain without the presence of the pyrocholre phase. Average grain size increased with an increase in sintering temperature, the value for the x=0.65 specimen sintered at 125$0^{\circ}C$ was 14.4${\mu}{\textrm}{m}$. The dielectric constant and dielectric loss of the x=0.65 specimen sintered at 125$0^{\circ}C$ were 1247, 2.05%, respectively. All specimens showed fairly good temperature and frequency stability of dielectric constant with the range from -2$0^{\circ}C$ to 6$0^{\circ}C$ and 100Hz to 10MHz. The coercive electric field and the remanent polarization of x = 0.65 specimen sintered at 125$0^{\circ}C$ were 8.5 kV/cm and 13 $\mu$C/cm$^2$, respectively.

• 전자공학회논문지A
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• 제33A권2호
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• pp.69-77
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• 1996

We analyzed wideband propagation characteristics of a microstrip transmission line based on FR-4 composite substrate using the wideband complex dielectric constant model and the phenomenological loss equivalence method. The loss calculated by constant relative permittivity and loss tangent is greatly overestimatd compared to that calculated by the frequency-dependent complex relative permittivity. This wideband analysis can be helpful to characterize high-speed and high-density transmission lines associated with the wideband dielectric characteristics and shows that the FR-4 composite substrate has high potential of high frequency circuit applications in terms o fthe propagation loss.