• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.190-193
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• 2003

Sm-doped lead zirconate titanate($Pb_{1.1}(Zr_{0.6}Ti_{0.4})O_3$; PZT) thin films on the Pt(111)/Ti/$SiO_2$/Si(100) substrates prepared by a sol-gel method. The effect on structural and electrical properties of PZT thin films measured according to the Sm content. Sm-doping altered significantly dielectric and ferroelectric properties. The remanent polarization and the coercive field decreased with the increasing Sm content. The dielectric constant and the dielectric loss of PZT thin films decreased with the increasing Sm content. At 100 kHz, the dielectric constant and the dielectric loss of. the 0.3 mol% of Sm-doped PZT thin film were 1200 and 0.12 respectively. The remanent polarization (2Pr) of the 0.3 mol% of Sm-doped PZT thin film was $52.13{\mu}C/cm^2$ and the coercive field was 94.01 kV/cm. The 0.3 mol% of Sm-doped PZT thin film showed an improved fatigue characteristic comparing to the undoped PZT thin film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.296-299
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• 2003

In this paper, $0.10Pb(Sb_{1/2}Sn_{1/2})O_3-0.25PbTiO_3-0.65PbZrO_3$ ceramics were fabricated by the mixed-oxide method. The sintering temperature and time were $1230^{\circ}C$ and 2[hr], respectively. The structural, dielectric and piezoelectric properties with addition of NiO were studied. The crystal structure of a specimen was rhombohedral. As a result of SEM, the average grain size were decreased with increasing the contents of NiO. But the grains of the specimens doped with 0.4wt% NiO were increased, due to deposits of excess NiO at grain boundaries in the liquid phase. Relative dielectric constant and dielectric loss of the specimen doped with 0.1wt% NiO were 701 and 0.026, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.04a
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• pp.74-75
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• 2006

We have investigated dielectric properties depending on temperature in organic light-emitting diodes using 8-hydroxyquinoline aluminum ($Alq_3$) as an electron transport and emissive material. We analyzed the dielectric properties of organic light-emitting diodes using characteristics of impedance. he Impedance characteristics was measured complex impedance Z and phase $\theta$ in the temperature range of 10 K to 300 K. We obtained complex electrical conductivity, dielectric constant and loss tangent ($tan{\delta}$) of the device at room temperature. From these analyses, we are able to interpret a conduction mechanism and dielectric properties contributed by an interfacial and orientational polarization.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.12
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• pp.1633-1640
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• 2018

Epoxy resin is a polar thermosetting polymer that is widely employed in different branches of industry and everyday life, due to their stable physical and chemical properties. Of all the polymer materials currently being used in the electrical insulation industry, epoxy resin is the most widely used kind, chosen as the base polymer material in the present study. Composites were prepared according to the mixing ratio (MS: MA, 1: 9, 3: 7, 5: 5, 7: 3, 9: 1)of mixture for Heterogeneous Minerals(Micro Silica:MS, Micro Alumina:MA) (MS+MA). We have investigated for AC electrical insulation breakdown characteristics and the dielectric properties (permittivity, dielectric loss, and conductivity) with frequency changes. The electrical AC insulation breakdown performance was improved with the increase of the mixing ratio of MS according to heterogeneous mineral material mixture(MS+MA). As Dielectric properties, the dielectric constant and dielectric loss increased with decreasing frequency and decreased with increasing MS content ratio of heterogeneous mineral mixture. Tensile strength and flexural strength according to the mixing ratio (MS + MA) of epoxy / heterogeneous mineral mixture were studied by mechanical properties. The performance of mechanical tensile and flexural strength was significantly improved as the fill contents ratio of MS increased.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.6
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• pp.251-255
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• 2007

We made $(1-x)BCB-xBNT(BaNd_2Ti_4O_{12})$ (x=20, 30, 40, 50 vol%) composite thick film with a high dielectric constant and low loss by the hand casting method. Dielectric constant and dielectric loss of prepared thick film are measured at 1MHz and curing behavior of the film are observed through thermal analysis such as DSC. We investigated the effect of contents of BNT filler and curing behavior of film on dielectric properties of BCB-BNT composite. Dielectric constant increased with increasing BNT filler from 20 to 50 vol% and dielectric loss ($tan{\delta}$) decreased with increasing BNT filler. Dielectric constant and loss ($tan{\delta}$) of composite material was not nearly dependent on the curing behavior. But as a result of TCC (Temperature Characteristics of Coefficient) decreased with increasing the curing temperature, we confirmed that the curing of these composite system is most stable above $250^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.7
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• pp.521-524
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• 2010

Low loss perovskite niobates and tantalates have been placed on a short list of functional materials for future technologies. In this study, we fabricated Ag(Ta,Nb)$O_3$ thick films on the $Al_2O_3$ substrates by the screen printing method. The Ag(Ta,Nb)$O_3$ powders were fabricated by the mixed oxide method. The sintering temperature and time were $1150^{\circ}C$ and 2 hrs, respectively. The results of XRD analysis showed that the specimens employed in this study had the pesudo cubic structure. The dielectric permittivity and loss tangent of the films have been characterized from 1 kHz to 1 MHz. Also the dielectric permittivity and loss tangent were measured from 303 K to 393 K. The electrical properties of the film are also discussed.

• Korean Journal of Materials Research
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• v.21 no.7
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• pp.377-383
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• 2011

Thermoelectric power, dc conductivity, and the dielectric relaxation properties of $La_2NiO_{4.03}$ are reported in the temperature range of 77 K - 300 K and in a frequency range of 20 Hz - 1 MHz. Thermoelectric power was positive below 300K. The measured thermoelectric power of $La_2NiO_{4.03}$ decreased linearly with temperature. The dc conductivity showed a temperature variation consistent with the variable range hopping mechanism at low temperatures and the adiabatic polaron hopping mechanism at high temperatures. The low temperature dc conductivity mechanism in $La_2NiO_{4.03}$ was analyzed using Mott's approach. The temperature dependence of thermoelectric power and dc conductivity suggests that the charge carriers responsible for conduction are strongly localized. The relaxation mechanism has been discussed in the frame of the electric modulus and loss spectra. The scaling behavior of the modulus and loss tangent suggests that the relaxation describes the same mechanism at various temperatures. The logarithmic angular frequency dependence of the loss peak is found to obey the Arrhenius law with activation energy of ~ 0.106eV. At low temperature, variable range hopping and large dielectric relaxation behavior for $La_2NiO_{4.03}$ are consistent with the polaronic nature of the charge carriers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.222-222
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• 2007

RF circuit을 구현하는데 있어서 기판의 전기적 특성을 정확하게 아는 것은 원하는 결과를 추출하기 위해 매우 중요하다. 본 연구에서는 현재 사용되고 있는 PI 기판의 전기적인 특성인 유효 유전율과 loss tangent 값을 T-resonator률 이용해 정확하게 측정하고자 했다. T-resonator는 microstrip 구조로 구현 되었으며 conductor material은 Cu를 사용하였다. PI 기판의 두께는 25um, Cu의 두께는 PI 기판의 종류에 따라 12um 와 18um, T-resonator line width는 50um로 구현하였다. 또한 공진 주파수에 따라 stub 길이가 다른 10개의 T-resonator를 제작하였다. PI 기판의 유효 유전율을 구하기 위해 stub 길이의 open-end effect와 T-junction effect를 고려하였으며 수식을 통해 정확한 유효 유전률을 추출하였다. 또한 PI 기판의 loss tangent 추출에 필요한 dielectric loss를 추출하기 위해 unload quality factor를 분석하였다. Unload quality factor는 dielectric loss, conductor loss, radiation loss를 구성되며 conductor loss와 radiation loss를 수식에 의해 구하고 dielectric loss를 추출 하였다. 추출 된 dielectric loss를 통해 각각의 T-resonator의 loss tangent 값을 구하였다. T-resonator를 이용한 PI 기판의 측정은 비교적 복잡한 수식에 의해 이루어지지만 정확한 data를 얻을 수 있고 다른 재료의 전기적 특성을 추출하는데 응용이 가능하다.

• Journal of the Korean Applied Science and Technology
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• v.32 no.1
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• pp.40-47
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• 2015

Single-walled carbon nanotubes (SWNTs) was modified with various length of linear alkyl chains and passivated to form dielectric filler. The modified SWNTs embedded into epoxy matrix to fabricate a flexible composite with high dielectric constant. The dielectric behavior of the composite was significantly changed with various alkyl chain length(n) of pyrene. The dielectric constant of the epoxy/SWNTs composite significantly increased with respect to increase in length of alkyl chain at the frequency range from 10 to 105Hz (n=12and18).We also found that the passivated epoxy/SWNTs composite with high dielectric constant presented low dielectric loss. The resulted dielectric performances corresponded to de-bundling of nanotubes and their distribution behavior in the matrix in terms of tail length of alkyl pyrene in the passivation layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1453-1456
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• 2009

Transparent sol-gel hybrid dielectric material (hybrimer) coating films were fabricated by spin coating and photo or thermal curing of sol-gel derived oligosiloxane resins. Hybrimer coating films are suitable as the passivation layer of TFT in AMLCD due to low dielectric constant, small loss tangent, low leakage current density, high transmittance and thermal stability.