• 한국통신학회논문지
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• 제21권3호
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• pp.753-762
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• 1996

In this paper, aperture coupled stacked microstrip array antennas are proposed and their operating characteristics are analyzed based on analytical. In order to evaluate mutual coupling between slot-coupled microstrip patches in finite array, analysis uses the reciprocity theorem and the spectral domain Green's functions for dielectric slab in a moment method solution for the unknown patches and solts current distrbution. By introducing an N-port equivalent network, the impedance matrix of an affay of N-element slot-coupled patches is evaluated directly from its network current matix of order N$^{2}$, and it can be programmed to be run on a PC. Numerical results show mutual coupling, radiation pattern, active reflection coefficient versus scan angle, radiation efficiency and active element gain pattern.

• 한국세라믹학회지
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• 제36권12호
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• pp.1374-1380
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• 1999

The cause of Scond Harmonic Generation (SHG) in thermally poled silica glass is suggested basedon the electrical and dielectric relaxation measurements. The absorption currents as functions of time were measured for various types of silica glasses and analyzed by the theory of Space Charge Polarization. Space charge polarization occurs when an ionic conducting material is subjected to dc electric field with blocking electrode. Thermal poling performed to induce SHG in silica glass is basically identical to the process generating space charge polarization. Hence it was found that gene-ration removal reproduction and temperature dependence of SHG in poled silica is directly related to those of space charge polarization. It turned out that the fundamental parameters governing the SHG in poled silica are charge carrier concentration and mobility. Based on the theory of space charge polarization and experimental results of electrical rela-xation the method to increase the intensity of SHG is proposed.

• Bulletin of the Korean Chemical Society
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• 제30권4호
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• pp.857-862
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• 2009

We model lattice-mismatched group III-V semiconductor $In_{x}Ga_{1-x}$ alloys with the three-parameter anharmonic Kirkwood-Keating potential, which includes realistic distortion effect by introducing anharmonicity. Although the potential parameters were determined based on optical properties of the binary parent alloys InAs and GaAs, simulated dielectric functions, reflectance, and Raman spectra of alloys agree excellently with experimental data for any arbitrary atomic composition. For a wide range of atomic composition, InAs- and GaAs-bond retain their respective properties of binary parent crystals despite lattice and charge mismatch. It implies that use of the anharmonic Kirkwood-Keating potential may provide an optimal model system to investigate diverse and unique optical properties of quantum dot heterostructures by circumventing potential parameter searches for particular local structures.

• 한국광학회지
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• 제12권6호
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• pp.437-445
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• 2001

We examine theoretically the properties of the force on Mie particles induced by evanescent fields at a system of multilayer films (including a metal film), at which the surface plasmon resonance is excited by a p-polarized plane electromagnetic wave. An expression of the surface plasmon-coupled evanescent fields produced in Kretschmann (or Sarid) geometry is expanded in terms of vector spherical wave functions, while multiple reflections between the Mie particle and the metal boundary are taken into account. The Cartesian components of the force on Mie particles by the evanescent fields are analytically formulated and numerically evaluated. The force components are increased by one or two orders of magnitude at metal boundaries over those at dielectric boundaries. As a result, we can confirm the possibility of stable manipulation or rotation of a finite-sized object by forces of surface plasmon-coupled evanescent fields.

• 한국전기전자재료학회논문지
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• 제25권12호
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• pp.961-968
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• 2012

In this study, we have investigated the effects of Mn and Co co-doping on defects, J-E curves and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. Admittance spectra and dielectric functions show two bulk defects of $Zn_i^{{\cdot}{\cdot}}$ (0.17~0.18 eV) and $V_o^{\cdot}$ (0.30~0.33 eV). From J-E characteristics the nonlinear coefficient (${\alpha}$) and resistivity (${\rho}_{gb}$) of pre-breakdown region decreased as 30 to 24 and 5.1 to 0.08 $G{\Omega}cm$ with sintering temperature, respectively. The double Schottky barrier of grain boundaries in ZB(MCo) ($ZnO-Bi_2O_3-Mn_3O_4-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.64 eV at lower temperature to 1.06 eV at higher temperature. It was revealed that a co-doping of Mn and Co in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against an ambient temperature (${\alpha}$-factor= 0.136).

• 대한전자공학회논문지TC
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• 제47권8호
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• pp.61-67
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• 2010

일반적으로 MIS(도체-부도체-반도체)의 다층 구조로 이루어진 대칭 결합선로에 대한 해석 절차는 모드(even and odd) 해석에 기초한 특성임피던스와 전파상수를 추출함으로서 단층의 결합선로 해석 절차와 동일하다. 본 논문에서는 손실매질의 다층구조로 이루어진 마이크로 스트립선로의 손실특성의 개선을 위한 새로운 구조를 제안한다. MIS 구조로 된 전송선로의 Si와 SiO2층 사이에 0전위를 가진 도체를 일정한 간격의 주기적인 배열로 고안된 새로운 모델의 MIS구조에 대한 유한차분법을 이용한 해석방법이 사용된다. 특히 전송선로에 대한 유전체의 영향을 줄이기 위하여 0전위를 가진 주기적인 결합의 도체로 이루어진 구조가 시간영역의 신호를 통해 시험된다. 다양한 손실률을 가진 불완전 유전체에 따른 주파수 의존적인 추출된 전송선로 파라미터와 등가회로 파라미터가 주파수 함수로서 나타내진다. 특히 본 논문에서 제안한 새로운 구조의 불완전 유전체에 대한 전송선로 파라미터가 주파수 함수로 구해진다.

• 한국전기전자재료학회논문지
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• 제24권11호
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• pp.882-889
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• 2011

In this study, we have investigated the effects of Co doping on I-V curves, bulk trap levels and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. From I-V characteristics the nonlinear coefficient (a) and the grain boundary resistivity (${\rho}_{gb}$) decreased as 32${\rightarrow}$22 and 18.4${\rightarrow}0.6{\times}10^9{\Omega}cm$ with sintering temperature (900~1,300$^{\circ}C$), respectively. Admittance spectra and dielectric functions show two bulk traps of zinc interstitial, $Zn_i^{{\cdot}{\cdot}}$(0.16~0.18 eV) and oxygen vacancy, $V_o^{{\cdot}}$ (0.28~0.33 eV). The barrier of grain boundaries in ZBCo (ZnO-$Bi_2O_3-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.93 eV at the 460~580 K to 1.13 eV at the 620~700 K. It is revealed that Co dopant in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against the ambient temperature.

• 조명전기설비학회논문지
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• 제24권8호
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• pp.142-149
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• 2010

본 논문은 준평등전계에서 뇌임펄스전압에 대한 $SF_6$와 dry-air의 절연파괴 특성에 대하여 기술하였다. 준평등전계로 사용된 구-평판전극계의 전계이용률은 71[%]이다. $SF_6$는 0.1~0.2[MPa] 범위에서, dry-air는 0.2~0.6[MPa]에서 $SF_6$와 dry-air의 절연파괴전압을 임펄스전압의 극성과 가스압력에 따라 측정 분석하였다. 그 결과 뇌임펄스전압에 대한 두 가스의 절연파괴전압은 정극성이 부극성보다 높았으며, $SF_6$의 절연파괴전압이 dry-air의 절연파괴전압보다 약 2.67배정도 높았다. 본 연구결과는 뇌서지에 대하여 우수한 성능을 가지는 배전기기에서 $SF_6$의 대체가스 성능 평가에 유용한 정보가 될 것이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.281-281
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• 2007

Low Temperature Co-fired Ceramic (LTCC) technology has been used in electronic device for various functions. LTCC technology is to fire dielectric ceramic and a conductive electrode such as Ag or Cu thick film below the temperature of $900^{\circ}C$ simultaneously. The glass-ceramic has been widely used for LTCC materials due to its low sintering temperature, high mechanical properties and low dielectric constants. To obtain the high strength, addition of filler, the microstructure should have various crystals and low pores in a composite. In this study, two glass frits were mixed with different alumina size(0.5, 2, 3.7um) and sintered at the range of $850{\sim}950^{\circ}C$. The microstructure, crystal phases, thermal and mechanical properties of the composites were investigated using FE-SEM, XRD, TG-DTA, Dilatomer. When the particle size of $Al_2O_3$ filler increased, the starting temperatures for the densification of the sintered bodies, onset point of crystallization, peak crystallization temperature in the glass-ceramic composites decreased gradually. After sintered at $900^{\circ}C$, the glass frits were crystallized as $CaAl_2Si_2O_8\;and\;CaMgSi_2O_6$. The purpose of our study is to understand the relationship between the $Al_2O_3$ particle size and thermal properties in composites.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.591-593
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• 2000

In this paper, we describe the results of a combined experimental theoretical study designed to understand and predict the dielectric properties of SF$_{6}$ and SF$_{6}$+Ar mixtures. The electron transport, ionization, and attachment coefficients for pure SF$_{6}$ and gas mixtures containing SF$_{6}$ has been analysed over the E/N range 30~300[Td] by a two term Boltzmann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2[%] and 0.5[%] SF$_{6}$+Ar mixtures were measured by time- of- flight method, The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with the experimental and theoretical for a rang of E/N values. Electron energy distribution functions computed from numerical solutions of the electron transport and reaction coefficients as functions of E/N. We have calculated $\alpha$,η and $\alpha$-η the ionization, attachment coefficients, effective ionization coefficients, and (E/N), the limiting breakdown electric-field to gas density ratio, in SF$_{6}$ and SF$_{6}$+Ar mixtures by numerically solving the Boltzmann equation for the electron energy distribution. The results obtained from Boltzmann equation method and Monte Carlo simulation have been compared with present and previously obtained data and respective set of electron collision cross sections of theections of the