• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.245-248
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• 1997

The dielectric resonators(DRs) with dielectric properties are widely used in microwave integrated circuit(MICs) and monolithic microwave integrated circuits(MMICS). The variational method as numerical simulation scheme would be applied to calculate the resonant frequencies(fr) and Q-factors of microwave dielectric resonators. The dielectric resonator with a cylindrical “puck” structure of high dielectric material is modeled in this simulation. The parameters, such as the diameter, the height, and the dielectric constant of dielectric resonator, would determine the resonant frequency and the Q-factor. The relationship between these parameters would effect each other to evaluate the approximate resonant frequency. This simulation method by the variational formula is very effective to calculate fr, and Q-factor. in high frequency microwave dielectric resonator The error rate of the simulation results and the measured results would be considered to design the microwave dielectric resonators.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.7
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• pp.279-286
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• 2002

Linear and nonlinear complex permittivities were measured for copolymers of vinylidene cyanide(VDCN) with vinyl acetate(VAc), vinyl propionate(VPr), vinyl bezoate(VBz), styrene(St) and methyl methacrylate(MMA). Experimental results are well fitted by the function (equation omitted) except at low frequency where dc conduction dominates. The analysis of dielectric relaxation mechanism by combined knowledge about linear and nonlinear dielectric permittivities and dipoles give us informations about electrical and thermal motions in these copolymers. According to the analysis it could be found that the variation for temperature of the dielectric relaxation strength in these copolymers is related to the interaction between dipoles and the nonlinear dielectric effect factor R$_{s}$ is proportional to square of the dipolar correlation factor R$_{p}$././.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2000.11a
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• pp.243-247
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• 2000

In this parer, Q-factor measurement method for a dielectric resonator in an MIC environment using the effective dielectric constant is proposed. The effective dielectric constant technique is applied to both radial and axial directions. The proposed method shows that the accuracy of the Q-factor measurement is to be improved with 2% ～ 3% relative error.

• Korean Journal of Food Science and Technology
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• v.28 no.3
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• pp.470-474
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• 1996

The dielectric properties, dielectric constant (${\varepsilon}‘$) and loss factor (${\varepsilon}’$), of skin and pulp of fresh ginseng were measured from $25^{\circ}C$ to $67^{\circ}C$ using an open-ended coaxial probe technique for 915 MHz and 2450 MHz. Pulp and skin had dielectric constant of $30{\sim}64$ and loss factor between 10 and 20, each variable having a respective frequency dependence typical of materials with high water content. Although the loss factor was nearly constant, the dielectric constant increased as moisture content increased. The dielectric constant of ginseng pulp increased as temperature increased (temperature ${\leq}56^{\circ}C$), but any significant differences were not found in skin dielectric properties. Penetration depth for fresh ginseng were about 2 cm at 91.5 MHz and 1cm at 2450 MHz.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1092-1095
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• 2005

The effect of the dielectric constant (${\varepsilon}$) of bonding materials in screen-printed carbon nanotube cathode on field enhancement factor was investigated using the ANSYS software for high-efficient CNT-cathodes. The field enhancement factor increased with decreasing the dielectric constant and reaching a maximum value when the dielectric constant is 1, the value for a vacuum. This indicates that the best bonding materials for screen-printing CNT cathodes should have a low dielectric constant and this can be used as criteria for selecting bonding materials for use in CNT pastes for high-efficient CNT-cathodes

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.9
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• pp.942-946
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• 2004

The crystalline and dielectric properties on Al$_2$O$_3$ filled glass frit (CaO-Al$_2$O$_3$-SiO$_2$-MgO-B$_2$O$_3$) with admixtures of TiO$_2$ have been investigated. The dielectric constant value of 7.5 ∼ 7.8, qualify factor value of 700 were obtained for glass frit : Al$_2$O$_3$(50 : 50 wt%) ceramics. Addition of TiO$_2$ less than 5 wt% slightly increased the dielectric constant from 7.8 to 8.8 due to higher dielectric constant of TiO$_2$. With increasing the amount of TiO$_2$ up to 5 wt%, the temperature coefficient of dielectric properties was improved. When the TiO$_2$ 5 wt% were added, dielectric properties were dielectric constant 8.8, quality factor 840 and the temperature coefficient of dielectric 45 ppm/$^{\circ}C$ at a sintering temperature 920$^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.1
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• pp.81-85
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• 1996

Microwave dielectric properties of 0.15(B $a_{x}$S $r_{0.05}$)O-0.15(S $m_{2}$(1-y)N $d_{2y}$) $O_{3}$-0.7Ti $o_{2}$(x=o.9~0.1[mol.], y=6[m/o]) ceramics were investigated with BaO compositional ratio. Sintered density and resistivity of specimens were independent on the BaO compositional ratio. In the specimen with x=0.975[mol.], dielectric constant, quality factor and temperature coefficient of resonant frequency had good values of 76.52, 3001(at 3[GHz]) and +0.71[ppm/.ceg. C], respectively. By comparing with the stoichiometric compositions of 78.14, 2938(at 3[GHz])+14.19[ppm/.ceg. C], dielectric constant and quality factor showed similar properties, but the temperature coefficient of resonant frequency was highly improved. (author). refs., figs., tabs.s.s.

• Bulletin of the Korean Chemical Society
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• v.20 no.11
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• pp.1329-1334
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• 1999

The curing characteristics of diglycidyl ether of bisphenol A (DGEBA) with diaminodiphenylmethane (DDM) as a curing agent were studied using differential scanning calorimetry (DSC), rheometrics mechanical spectrometry (RMS), and dielectric analysis (DEA). The isothermal curing kinetics measured by DSC were well represented with the generalized auto-catalytic reaction model. With the temperature sweep, the inverse relationship between complex viscosity measured by RMS and ionic conductivity obtained from DEA was established indicating that the mobility of free ions represented by the ionic conductivity in DEA measurement and the chain segment motion as revealed by the complex viscosity measured from RMS are equivalent. From isothermal curing measurements at several different temperatures, the ionic conductivity contribution was shown to be dominant in the dielectric loss factor at the early stage of cure. The contribution of the dipole relaxation in dielectric loss factor became larger as the curing further proceeded. The critical degrees of cure, at which the dipolar contribution in the dielectric loss factor starts to appear, increases as isothermal curing temperature is increased. The dielectric relaxation time at the same degree of cure was shorter for a sample cured at higher curing temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.397-403
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• 2003

Microwave dielectric properties of (1-x)ZnW $O_4$-xTi $O_2$ ceramic systems were investigated with calcination temperatures and Ti $O_2$ contents. The ZnW $O_4$ ceramic could be suitably sintered at 1075$^{\circ}C$ and showed the dielectric constant of 13.6, quality factor(Q$\times$ $f_{O}$value) of 22,000 and temperature coefficient of resonant frequency($\tau$$_{f}$) of -65$\pm$2ppm/$^{\circ}C$. Increasing the amount of Ti $O_2$ in the range of 0.25 to 0.45 mol, the dielectric constant and $\tau$$_{f}$ increased due to the role of Ti $O_2$ but the quality factor decreased due to the increase of phase boundaries. The 0.7ZnW $O_4$-0.3Ti $O_2$ ceramic showed the dielectric constant of 19.8, qualify factor(Q$\times$ $f_{0}$) of 20,000 and $\tau$$_{f}$ of -3$\pm$1ppm/$^{\circ}C$.>.EX>.>.>.

• Electrical & Electronic Materials
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• v.10 no.9
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• pp.960-967
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• 1997